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| NTE2584 Silicon NPN Transistor High Voltage, High Speed Switch Features: D High Breakdown Voltage, High Reliability D Fast Switching Speed D Wide ASO Range Absolute Maximum Ratings: (TA = +25C unless otherwise specified) Collector Base Voltage, VCBO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 800V Collector Emitter Voltage, VCEO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 500V Emitter Base Voltage, VEBO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 7V Collector Current, IC Continuous . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5A Peak (Note 1) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10A Base Current, IB . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2A Collector Power Dissipation, PC TA = +25C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1.65W TC = +25C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 50W Operating Junction Temperature, TJ . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . +150C Storage Temperature Range, Tstg . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . -55 to +150C Note 1. Pulse Test: Pulsed Width 300s, Duty Cycle 10%. Electrical Characteristics: (TA = +25C unless otherwise specified) Parameter Collector Cutoff Current Emitter Cutoff Current DC Current Gain Gain-Bandwidth Product Output Capacitance Collector Emitter Saturation Voltage Symbol ICBO IEBO hFE fT Cob VCE(sat) Test Conditions VCB = 500V, IE = 0 VEB = 5V, IC = 0 VCE = 5V, IC = 600mA VCE = 5V, IC = 3A VCE = 10V, IC = 600mA VCB = 10V, f = 1MHz IC = 3A, IB = 600mA Min - - 20 8 - - - Typ - - - - 18 80 - Max 10 10 50 - - - 1.0 MHz pF V Unit A A Electrical Characteristics (Cont'd): (TA = +25C unless otherwise specified) Parameter Base Emitter Saturation Voltage Collector Emitter Breakdown Voltage Emitter Base Breakdown Voltage Collector Emitter Sustaining Voltage Symbol VBE(sat) Test Conditions IC =3A, IB = 600mA Min - 800 500 7 500 500 - - - Typ - - - - - - - - - Max 1.5 - - - - - 0.5 3.0 0.3 Unit V V V V V V s s s Collector Base Breakdown Voltage V(BR)CBO IC = 1mA, IE = 0 V(BR)CEO IC = 5mA, RBE = V(BR)EBO IE = 1mA, IC = 0 VCO(sus) IC = 5A, IB = 1A, L = 50H VCEX(sus) IC = 2.5A, IB1 = -IB2 = 1A, L = 1mH, Clamped Turn-On Time Storage Time Fall Time ton tstg tf VCC = 200V, IC = 4A, IB1 = 0.8A, IB2 = - 1.6A, RL = 50 .402 (10.2) .035 (0.9) .177 (4.5) .051 (1.3) .346 (8.8) B C E .433 (11.0) .019 (0.5) .100 (2.54) |
Price & Availability of NTE2584
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