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| NIKO-SEM N- & P-Channel Enhancement Mode Field Effect Transistor(Preliminary) P4532VG SOP-8 Lead-Free PRODUCT SUMMARY V(BR)DSS N-Channel P-Channel 30 -30 RDS(ON) 60m 45m ID 4A -5A G : GATE D : DRAIN S : SOURCE ABSOLUTE MAXIMUM RATINGS (TC = 25 C Unless Otherwise Noted) PARAMETERS/TEST CONDITIONS Drain-Source Voltage Gate-Source Voltage Continuous Drain Current Pulsed Drain Current Power Dissipation Junction & Storage Temperature Range 1 SYMBOL VDS VGS N-Channel P-Channel 30 20 4 3 12 2 1.3 -55 to 150 -30 20 -5 -4 -20 UNITS V V TC = 25 C TC = 70 C TC = 25 C TC = 70 C ID IDM PD Tj, Tstg A W C THERMAL RESISTANCE RATINGS THERMAL RESISTANCE Junction-to-Ambient 1 2 SYMBOL RJA TYPICAL MAXIMUM 62.5 UNITS C / W Pulse width limited by maximum junction temperature. Duty cycle 1% ELECTRICAL CHARACTERISTICS (TC = 25 C, Unless Otherwise Noted) LIMITS PARAMETER SYMBOL TEST CONDITIONS STATIC Drain-Source Breakdown Voltage V(BR)DSS VGS = 0V, ID = 250A VGS = 0V, ID = -250A Gate Threshold Voltage VGS(th) VDS = VGS, ID = 250A VDS = VGS, ID = -250A N-Ch P-Ch N-Ch P-Ch 30 -30 1 -1 1.5 -1.5 2.5 -2.5 V MIN TYP MAX UNIT 1 JUL-26-2004 NIKO-SEM N- & P-Channel Enhancement Mode Field Effect Transistor(Preliminary) P4532VG SOP-8 Lead-Free VDS = 0V, VGS = 20V Gate-Body Leakage IGSS VDS = 0V, VGS = 20V VDS = 24V, VGS = 0V VDS = -24V, VGS = 0V Zero Gate Voltage Drain Current IDSS N-Ch P-Ch N-Ch P-Ch 100 100 1 -1 10 -10 12 -20 72 58 48 34 19 11 95 80 nA VDS = 20V, VGS = 0V, TJ = 55 C N-Ch VDS = -20V, VGS = 0V, TJ = 55 C P-Ch N-Ch P-Ch N-Ch P-Ch N-Ch P-Ch N-Ch P-Ch A On-State Drain Current1 ID(ON) VDS = 5V, VGS = 10V VDS =-5V, VGS = -10V VGS = 4.5V, ID = 3A A Drain-Source Resistance1 On-State VGS = -4.5V, ID = -4A RDS(ON) VGS = 10V, ID = 4A VGS = -10V, ID = -5A m 60 45 Forward Transconductance1 gfs VDS = 5V, ID = 3A VDS = -5V, ID = -5A S DYNAMIC Input Capacitance Output Capacitance Reverse Transfer Capacitance Total Gate Charge2 Gate-Source Charge2 Gate-Drain Charge2 Ciss Coss Crss Qg Qgs Qgd N-Ch N-Channel VGS = 0V, VDS = 10V, f = 1MHz P-Channel P-Ch N-Ch P-Ch P-Ch N-Channel VDS = 0.5V(BR)DSS, VGS = 10V, ID = 3A P-Channel VDS = 0.5V(BR)DSS, VGS = -10V, ID = -5A N-Ch P-Ch N-Ch P-Ch N-Ch P-Ch 790 690 175 310 65 75 5 14 0.8 2.2 1.0 1.9 nC pF VGS = 0V, VDS = -10V, f = 1MHz N-Ch 2 JUL-26-2004 NIKO-SEM N- & P-Channel Enhancement Mode Field Effect Transistor(Preliminary) P4532VG SOP-8 Lead-Free Turn-On Delay Time2 Rise Time2 Turn-Off Delay Time2 Fall Time2 td(on) tr td(off) tf N-Channel VDD = 10V ID 1A, VGS = 10V, RGEN = 6 P-Channel VDD = -10V N-Ch P-Ch N-Ch P-Ch N-Ch P-Ch N-Ch 7 6.7 12 9.7 12 19.8 7 12.3 11 13.4 18 19.4 18 35.6 11 22.2 nS ID -1A, VGS = -10V, RGEN = 6 P-Ch SOURCE-DRAIN DIODE RATINGS AND CHARACTERISTICS (TC = 25 C) Continuous Current IS N-Ch P-Ch N-Ch P-Ch IF = 1A, VGS = 0V VSD IF = -1A, VGS = 0V 1 2 1.2 -1.3 2.6 -2.6 1 -1 V A Pulsed Current 3 ISM Forward Voltage1 N-Ch P-Ch Pulse test : Pulse Width 300 sec, Duty Cycle 2%. Independent of operating temperature. 3 Pulse width limited by maximum junction temperature. REMARK: THE PRODUCT MARKED WITH "P4532VG", DATE CODE or LOT # Orders for parts with Lead-Free plating can be placed using the PXXXXXG parts name. 3 JUL-26-2004 NIKO-SEM N- & P-Channel Enhancement Mode Field Effect Transistor(Preliminary) P4532VG SOP-8 Lead-Free N-CHANNEL 4 JUL-26-2004 NIKO-SEM N- & P-Channel Enhancement Mode Field Effect Transistor(Preliminary) P4532VG SOP-8 Lead-Free 5 JUL-26-2004 NIKO-SEM N- & P-Channel Enhancement Mode Field Effect Transistor(Preliminary) P4532VG SOP-8 Lead-Free P-CHANNEL 100 -Is - Reverse Drain Current(A) V GS = 0V 10 1 T A = 125 C 25 C -55 C 0.1 0.01 0.001 0 0.2 0.6 0.8 1.0 1.2 0.4 -VSD - Body Diode Forward Voltage(V) 1.4 6 JUL-26-2004 NIKO-SEM N- & P-Channel Enhancement Mode Field Effect Transistor(Preliminary) P4532VG SOP-8 Lead-Free 7 JUL-26-2004 NIKO-SEM N- & P-Channel Enhancement Mode Field Effect Transistor(Preliminary) P4532VG SOP-8 Lead-Free SOIC-8(D) MECHANICAL DATA mm Min. 4.8 3.8 5.8 0.38 Typ. 4.9 3.9 6.0 0.445 1.27 1.35 0.1 1.55 0.175 1.75 0.25 Max. 5.0 4.0 6.2 0.51 mm Min. 0.5 0.18 Typ. 0.715 0.254 0.22 0 4 8 Max. 0.83 0.25 Dimension A B C D E F G Dimension H I J K L M N J F D E G I H K B C A 8 JUL-26-2004 |
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