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5/
I27124 rev. D 02/03
20MT120UF
"FULL-BRIDGE" IGBT MTP
Features
Technology * Positive VCE(ON)Temperature Coefficient * 10s Short Circuit Capability * HEXFRED TM Antiparallel Diodes with UltraSoft Reverse Recovery * Low Diode VF * Square RBSOA * Aluminum Nitride DBC * Very Low Stray Inductance Design for High Speed Operation * UL approved (File E78996)
* UltraFast Non Punch Through (NPT)
UltraFast NPT IGBT
VCES = 1200V IC = 40A T C = 25C
Benefits
Applications * Rugged with UltraFast Performance * Benchmark Efficiency above 20KHz * Outstanding ZVS and Hard Switching Operation * Low EMI, requires Less Snubbing * Excellent Current Sharing in Parallel Operation * Direct Mounting to Heatsink * PCB Solderable Terminals * Very Low Junction-to-Case Thermal Resistance
* Optimized for Welding, UPS and SMPS
MMTP
Absolute Maximum Ratings Parameters
VCES I I I I I
C
Max
1200 @ TC = 25C @ TC = 106C 40 20 100 100 @ TC = 106C 25 100 20 2500 240 96 @ TC = 25C @ TC = 100C
Units
V A
Collector-to-Emitter Breakdown Voltage Continuos Collector Current Pulsed Collector Current Clamped Inductive Load Current Diode Continuous Forward Current Diode Maximum Forward Current Gate-to-Emitter Voltage RMS Isolation Voltage, Any Terminal to Case, t = 1 min Maximum Power Dissipation (only IGBT)
CM LM F FM
VGE VISOL PD
V W
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1
20MT120UF
I27124 rev. D 02/03
Electrical Characteristics @ TJ = 25C (unless otherwise specified)
Parameters
V(BR)CES V(BR)CES/ T J VCE(ON)
Min Typ Max Units Test Conditions
+1.3 3.29 4.42 3.87 5.32 3.99 -14 17.5 0.7 2.9 250 3.0 9.0 250 3.59 4.66 4.11 5.70 4.27 6 V V/C V VGE = 0V, I C = 250A VGE = 0V, I C = 3mA (25-125C) = = = = = = = = = = = = 15V, I C = 20A 15V, I C = 40A 15V, I C = 20A T J = 125C 15V, I C = 40A T J = 125C 15V, I C = 20A T J = 150C VGE, I C = 250A VGE, I C = 3mA (25-125C) 50V, IC = 20A, PW = 0V, V CE = 1200V, TJ 0V, V CE = 1200V, TJ 0V, V CE = 1200V, TJ 20V 80s = 25C = 125C = 150C
Collector-to-Emitter Breakdown Voltage 1200 Temperature Coeff. of Breakdown Voltage Collector-to-Emitter Saturation Voltage
VGE(th) Gate Threshold Voltage VGE(th) / Temperature Coeff. of T J Threshold Voltage g fe I CES Transconductance Zero Gate Voltage Collector Current (1)
4
VGE VGE VGE VGE VGE V VCE mV/C VCE S A mA nA VCE VGE VGE VGE VGE
I GES
Gate-to-Emitter Leakage Current
(1) I CES includes also opposite leg overall leakage
Switching Characteristics @ TJ = 25C (unless otherwise specified)
Parameters
Qg Qge Qgc Eon Eoff Etot Eon Eoff Etot Cies Coes Cres RBSOA Total Gate Charge (turn-on) Gate-Emitter Charge (turn-on) Gate-Collector Charge (turn-on) Turn-On Switching Loss Turn-Off Switching Loss Total Switching Loss Turn-On Switching Loss Turn-Off Switching Loss Total Switching Loss Input Capacitance Output Capacitance Reverse Transfer Capacitance Reverse Bias Safe Operating Area
Min Typ Max Units Test Conditions
176 19 89 513 402 915 930 610 1540 264 30 134 770 603 1373 1395 915 2310 nC IC = 20A VCC = 600V VGE = 15V VCC = 600V, IC = 20A VGE = 15V, Rg = 5, L = 200H TJ = 25C, Energy losses include tail and diode reverse recovery VCC = 600V, IC = 20A VGE = 15V, Rg = 5, L = 200H TJ = 125C, Energy losses include tail and diode reverse recovery VGE = 0V VCC = 30V f = 1.0 MHz TJ = 150C, IC = 120A VCC = 1000V, Vp = 1200V Rg = 5, VGE = +15V to 0V TJ = 150C VCC = 900V, Vp = 1200V Rg = 5, VGE = +15V to 0V
J
J
2530 3790 344 516 78 117 full square
pF
SCSOA
Short Circuit Safe Operating Area
10
s
2
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20MT120UF
I27124 rev. D 02/03
Diode Characteristics @ TJ = 25C (unless otherwise specified)
Parameters
V FM Diode Forward Voltage Drop
Min
Typ Max Units Test Conditions
2.48 3.28 2.44 3.45 2.21 420 98 33 2.94 3.90 2.84 4.14 2.93 630 150 50 V I C = 20A I C = 40A I C = 20A, T J = 125C I C = 40A, T J = 125C I C = 20A, T J = 150C VGE = 15V, Rg = 5, L = 200H VCC = 600V, IC = 20A T J = 125C
Erec trr Irr
Reverse Recovery Energy of the Diode Diode Reverse Recovery Time Peak Reverse Recovery Current
J ns A
Thermal- Mechanical Specifications
Parameters
TJ TSTG RthJC RthCS Operating Junction Temperature Range Storage Temperature Range Junction-to-Case Case-to-Sink IGBT Diode Module 5.5 8 3 10% 66 Nm g (oz)
(Heatsink Compound Thermal Conductivity = 1 W/mK)
Min
- 40 - 40
Typ
Max
150 125
Units
C C/ W
0.35 0.40 0.06
0.52 0.61
Clearance (external shortest distance in air
between two terminals)
mm
Creepage (shortest distance along external
surface of the insulating material between 2 terminals)
T Wt
Mounting Torque Weight
(2)
(2) A mounting compound is recommended and the torque should be checked after 3 hours to allow for the spread of the compound. Lubricated threads
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20MT120UF
I27124 rev. D 02/03
50
250
40
200
20
Ptot (W)
0 20 40 60 80 100 120 140 160
30
150
IC (A)
100
10
50
0 T C (C)
0 0 20 40 60 80 100 120 140 160 TC (C)
Fig. 2 - Power Dissipation vs. Case Temperature
Fig. 1 - Maximum DC Collector Current vs. Case Temperature
1000
1000
100 10 s 100 s 1 1ms DC
IC (A)
10 1 100
10
IC (A)
0.1
0.01 1 10 100 VCE (V) 1000 10000
10
100
1000
10000
VCE (V)
Fig. 3 - Forward SOA TC = 25C; TJ 150C
Fig. 4 - Reverse Bias SOA TJ = 150C; VGE =15V
4
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20MT120UF
I27124 rev. D 02/03
100
80
VGE VGE VGE VGE VGE
= 18V = 15V = 12V = 10V = 8.0V
100
80
VGE VGE VGE VGE VGE
= 18V = 15V = 12V = 10V = 8.0V
ICE (A)
40
ICE (A)
0 2 4 6 VCE (V) 8 10
60
60
40
20
20
0
0 0 2 4 6 VCE (V) 8 10
Fig. 5 - Typ. IGBT Output Characteristics TJ = -40C; tp = 80s
Fig. 6 - Typ. IGBT Output Characteristics TJ = 25C; tp = 80s
100
80
VGE VGE VGE VGE VGE
= 18V = 15V = 12V = 10V = 8.0V
120 100 80 -40C 25C 125C
I CE (A)
60
IF (A)
40 20 0 0 2 4 6 VCE (V) 8 10
60 40 20 0 0.0 1.0 2.0 3.0 4.0 5.0 VF (V)
Fig. 7 - Typ. IGBT Output Characteristics TJ = 125C; tp = 80s
Fig. 8 - Typ. Diode Forward Characteristics tp = 80s
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5
20MT120UF
I27124 rev. D 02/03
20 18 16 14 ICE = 40A ICE = 20A ICE = 10A
20 18 16 14 ICE = 10A ICE = 20A ICE = 40A
VCE (V)
VCE (V)
12 10 8 6 4 2 0 5 10 VGE (V) 15 20
12 10 8 6 4 2 0 5 10 VGE (V) 15 20
Fig. 9 - Typical VCE vs. VGE TJ = -40C
Fig. 10 - Typical VCE vs. VGE TJ = 25C
20 18 16 14 ICE = 10A ICE = 20A ICE = 40A
300 250 200 T J = 25C T J = 150C
VCE (V)
12 10 8 6 4 2 0 5 10 VGE (V) 15 20
ICE (A)
150 100 50 0 0 5 10 VGE (V) 15 20
Fig. 11 - Typical VCE vs. VGE TJ = 125C
Fig. 12 - Typ. Transfer Characteristics VCE = 50V; tp = 10s
6
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20MT120UF
I27124 rev. D 02/03
2400 2000 1600
Swiching Time (ns)
1000
EON
Energy (J)
tdOFF
100
1200 800 400 0 0 10 20 IC (A) 30 40 50 EOFF
tF
tdON tR
10 0 10 20 30 40 50
IC (A)
Fig. 13 - Typ. Energy Loss vs. IC TJ = 150C; L=1.4mH; VCE= 400V RG= 5; VGE= 15V
Fig. 14 - Typ. Switching Time vs. IC TJ = 150C; L=1.4mH; VCE= 400V RG= 100; VGE= 15V
2000
1000
1600
EON
tdOFF
Energy (J)
1200
Swiching Time (ns)
800
EOFF
100
tF tdON
400
tR
10 0 10 20 30 40 50 60 0 10 20 30 40 50 60
0
RG ( )
RG ( )
Fig. 15 - Typ. Energy Loss vs. RG TJ = 150C; L=1.4mH; VCE= 400V ICE= 5.0A; VGE= 15V
Fig. 16 - Typ. Switching Time vs. RG TJ = 150C; L=1.4mH; VCE= 400V ICE= 5.0A; VGE= 15V
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20MT120UF
I27124 rev. D 02/03
40
40
RG = 5.0
30
RG = 10
30
IRR (A)
20
R G = 30 R G = 50
IRR (A)
35
20
10
10
0 0 5 10 15 20 25 30
0 0 10 20 30 40 50 60
IF (A)
RG ( )
Fig. 17 - Typical Diode IRR vs. IF TJ = 150C
Fig. 18 - Typical Diode IRR vs. RG TJ = 150C; IF = 5.0A
40
3.0 2.5 2.0 10 30 50 1.0 0.5 0.0
0 200 400 600 800 1000
35
5.0 30A 20A
30
25
Q RR (C)
IRR (A)
1.5
20
10A
15
10
0
200
400
600
800
1000
1200
diF /dt (A/s)
diF /dt (A/s)
Fig. 19- Typical Diode I RR vs. diF/dt VCC= 400V; VGE= 15V; ICE= 5.0A; TJ = 150C
Fig. 20 - Typical Diode QRR VCC= 400V; VGE= 15V;TJ = 150C
8
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20MT120UF
I27124 rev. D 02/03
10000
Cies
Capacitance (pF)
1000
Coes
100
Cres
10 0 20 40 60 80 100
VCE (V)
Fig. 21- Typ. Capacitance vs. VCE VGE= 0V; f = 1MHz
16 14 12 10 600V
VGE (V)
8 6 4 2 0 0 40 80 120 160 200 Q G , Total Gate Charge (nC)
Fig. 22 - Typical Gate Charge vs. VGE ICE = 5.0A; L = 600H
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20MT120UF
I27124 rev. D 02/03
1
D = 0.50
Thermal Response ( Z thJC )
0.1
0.20 0.10 0.05
R1 R1 J 1 2 R2 R2 R3 R3 C 2 3 3
0.01
0.02 0.01
J
Ri (C/W) i (sec) 0.161 0.000759 0.210 0.147 0.017991 0.06094
1
Ci= i/Ri Ci= i/Ri
0.001
SINGLE PULSE ( THERMAL RESPONSE )
Notes: 1. Duty Factor D = t1/t2 2. Peak Tj = P dm x Zthjc + Tc
0.001 0.01 0.1 1 10
0.0001 1E-006 1E-005 0.0001
t1 , Rectangular Pulse Duration (sec)
Fig 23. Maximum Transient Thermal Impedance, Junction-to-Case (IGBT)
1
D = 0.50
Thermal Response ( Z thJC )
0.1
0.20 0.10 0.05
R1 R1 J 1 2 R2 R2 R3 R3 C 2 3 3
0.01
0.02 0.01
J
Ri (C/W) i (sec) 0.238 0.001017 0.312 0.061 0.033081 0.77744
1
Ci= i/Ri Ci= i/Ri
0.001
SINGLE PULSE ( THERMAL RESPONSE )
Notes: 1. Duty Factor D = t1/t2 2. Peak Tj = P dm x Zthjc + Tc
0.001 0.01 0.1 1 10
0.0001 1E-006 1E-005 0.0001
t1 , Rectangular Pulse Duration (sec)
Fig 24. Maximum Transient Thermal Impedance, Junction-to-Case (DIODE)
10
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20MT120UF
I27124 rev. D 02/03
L
L
0
DUT 1K
VCC
80 V Rg
DUT
1000V
Fig. CT.1 - Gate Charge Circuit (turn-off)
Fig. CT.2 - RBSOA Circuit
diode clamp / DUT
Driver
D C
L
900V
- 5V DUT / DRIVER
Rg
DUT
VCC
Fig. CT.3 - S.C. SOA Circuit
Fig. CT.4 - Switching Loss Circuit
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11
20MT120UF
I27124 rev. D 02/03
Outline Table
Electrical Diagram
Resistance in ohms
Dimensions in millimetres
12
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20MT120UF
I27124 rev. D 02/03
Ordering Information Table
Device Code
20
1
MT 120
2 3
U
4
F
5
1 2 3 4 5 6
-
Current rating Voltage code Speed/ Type Special Option
(20 = 20A) (120 = 1200V) (U = Ultra Fast IGBT) = Full Bridge)
Essential Part Number
Circuit Configuration (F
Data and specifications subject to change without notice. This product has been designed and qualified for Industrial Level. Qualification Standards can be found on IR's Web site.
IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105 TAC Fax: (310) 252-7309 Visit us at www.irf.com for sales contact information. 01/03
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