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| LAB MECHANICAL DATA Dimensions in mm (inches) SEME 2N3700DCSM HIGH VOLTAGE, MEDIUM POWER, NPN DUAL TRANSISTOR IN A HERMETICALLY SEALED CERAMIC SURFACE MOUNT PACKAGE FOR HIGH RELIABILITY APPLICATIONS FEATURES 1.40 0.15 (0.055 0.006) 0.64 0.08 (0.025 0.003) 2.29 0.20 (0.09 0.008) 1.65 0.13 (0.065 0.005) * DUAL SILICON PLANAR EPITAXIAL NPN TRANSISTOR 4.32 0.13 (0.170 0.005) 2.54 0.13 (0.10 0.005) 2 1 3 4 5 * HERMETIC CERAMIC SURFACE MOUNT PACKAGE * CECC SCREENING OPTIONS * SPACE QUALITY LEVELS OPTIONS * HIGH VOLTAGE A 6 0.23 rad. (0.009) 1.27 0.13 (0.05 0.005) 6.22 0.13 (0.245 0.005) A= LCC2 PACKAGE Underside View PAD 1 - Collector 1 PAD 2 - Base 1 PAD 3 - Base 2 PAD 4 - Collector 2 PAD 5 - Emitter 2 PAD 6 - Emitter 1 APPLICATIONS: Dual Hermetically sealed surface mount version of the popular 2N3700 for high reliability/ space applications requiring small size and low weight devices. ABSOLUTE MAXIMUM RATINGS (Tcase = 25C unless otherwise stated) VCBO VCEO VEBO IC PD PD PD Rja Tstg Semelab plc. Collector - Base Voltage Collector - Emitter Voltage (IB = 0) Emitter - Base Voltage (IB = 0) Collector Current Per Device Dissipation Total Device Dissipation Derate above 25C (Per Device) (Total) Thermal Resistance Junction to Ambient Storage Temperature Telephone (01455) 556565. Telex: 341927. Fax (01455) 552612. 2N3700 140V 80V 7V 1A 350mW 525mW 2mW / C 3mW/C 240C/W -65 to 200C Prelim. 2/98 LAB ELECTRICAL CHARACTERISTICS (per Device) Parameter VCEO(sus)* ICBO* IEBO* VCE(sat)* VBE(sat)* hFE* Collector - Emitter Sustaining Voltage (IB = 0) Collector - Base Cut-off Current (IE = 0) Emitter Cut-off Current (IC = 0) Collector - Emitter Saturation Voltage Base - Emitter Saturation Voltage DC Current Gain (VCE = 10V) VCB = 90V VCB = 90V VEB = 5V IC = 150mA IC = 500mA IC = 150mA IC = 0.1mA IC = 10mA IC = 150mA IC = 500mA IC = 1A IC = 150mA V(BR)CBO V(BR)EBO Collector-base Breakdown Voltage (IE = 0) Emitter-base BreakdownVoltage (IC = 0) * Pulse test tp = 300s , 1% SEME 2N3700DCSM (Tcase = 25C unless otherwise stated) Test Conditions IC =10mA Min. 80 Typ. Max. Unit V 10 nA A nA V V V 300 V V Tamb = 150C IB = 15mA IB = 50mA IB = 15mA VCE = 10V VCE = 10V VCE = 10V VCE = 10V VCE = 10V VCE = 10V 140 7 50 90 100 50 15 10 10 0.2 0.5 1.1 IC = 100A IE = 100A DYNAMIC CHARACTERISTICS Parameter fT hfe CEBO CCBO rbb'Cb'c (Tcase = 25C unless otherwise stated) Test Conditions IC = 50mA IC = 1mA IC = 0 IC = 0 IC = 10mA VCE = 10V VCE = 5V VEB = 0.5V VCB = 10V VCB = 10V f = 20MHz f = 1kHz f = 1MHz f = 1MHz f = 4MHz Min. 100 80 Typ. Max. Unit 200 400 60 12 MHz pF pF ps Transition Frequency Small Signal Current Gain Emitter-base Capacitance Collector-base Capacitance Feedback time constant 25 400 Semelab plc. Telephone (01455) 556565. Telex: 341927. Fax (01455) 552612. Prelim. 2/98 |
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