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ON Semiconductort
2 DRAIN
JFET Amplifiers
P-Channel -- Depletion
MAXIMUM RATINGS
Rating Drain-Gate Voltage Reverse Gate-Source Voltage Forward Gate Current Total Device Dissipation @ TA = 25C Derate above 25C Junction Temperature Range Storage Channel Temperature Range Symbol VDG VGSR IG(f) PD TJ Tstg
3 GATE
1 SOURCE
2N5460 2N5461 2N5462
Value 40 40 10 350 2.8 -65 to +135 -65 to +150
Unit Vdc Vdc mAdc mW mW/C C C
1 2 3
CASE 29-11, STYLE 7 TO-92 (TO-226AA)
ELECTRICAL CHARACTERISTICS (TA = 25C unless otherwise noted)
Characteristic Symbol Min Typ Max Unit
OFF CHARACTERISTICS
Gate-Source Breakdown Voltage (IG = 10 Adc, VDS = 0) Gate Reverse Current (VGS = 20 Vdc, VDS = 0) (VGS = 30 Vdc, VDS = 0) (VGS = 20 Vdc, VDS = 0, TA = 100C) (VGS = 30 Vdc, VDS = 0, TA = 100C) Gate-Source Cutoff Voltage (VDS = 15 Vdc, ID = 1.0 Adc) Gate-Source Voltage (VDS = 15 Vdc, ID = 0.1 mAdc) (VDS = 15 Vdc, ID = 0.2 mAdc) (VDS = 15 Vdc, ID = 0.4 mAdc) V(BR)GSS 2N5460, 2N5461, 2N5462 IGSS 2N5460, 2N5461, 2N5462 2N5460, 2N5461, 2N5462 2N5460 2N5461 2N5462 2N5460 2N5461 2N5462 VGS(off) -- -- 0.75 1.0 1.8 0.5 0.8 1.5 -- -- -- -- -- -- -- -- 5.0 1.0 6.0 7.5 9.0 4.0 4.5 6.0 nAdc Adc Vdc 40 -- -- Vdc
VGS
Vdc
(c) Semiconductor Components Industries, LLC, 2001
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November, 2001 - Rev. 3
Publication Order Number: 2N5460/D
2N5460 2N5461 2N5462
ELECTRICAL CHARACTERISTICS (TA = 25C unless otherwise noted)
Characteristic Symbol Min Typ Max Unit
ON CHARACTERISTICS
Zero-Gate-Voltage Drain Current (VDS = 15 Vdc, VGS = 0, f = 1.0 kHz) 2N5460 2N5461 2N5462 IDSS -1.0 -2.0 -4.0 -- -- -- -5.0 -9.0 -16 mAdc
SMALL-SIGNAL CHARACTERISTICS
Forward Transfer Admittance (VDS = 15 Vdc, VGS = 0, f = 1.0 kHz) 2N5460 2N5461 2N5462 yfs 1000 1500 2000 -- -- -- -- -- -- -- 5.0 1.0 4000 5000 6000 75 7.0 2.0 mmhos
Output Admittance (VDS = 15 Vdc, VGS = 0, f = 1.0 kHz) Input Capacitance (VDS = 15 Vdc, VGS = 0, f = 1.0 MHz) Reverse Transfer Capacitance (VDS = 15 Vdc, VGS = 0, f = 1.0 MHz)
yos Ciss Crss en
mmhos pF pF
FUNCTIONAL CHARACTERISTICS
Equivalent Short-Circuit Input Noise Voltage (VDS = 15 Vdc, VGS = 0, f = 100 Hz, BW = 1.0 Hz) -- 60 115 nV Hz
Figure 1.
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DRAIN CURRENT versus GATE SOURCE VOLTAGE
4.0 3.5 I D, DRAIN CURRENT (mA) 3.0 2.5 2.0 1.5 1.0 0.5 0 0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 VGS, GATE-SOURCE VOLTAGE (VOLTS) 1.8 2.0 TA = -55C 25C 125C Yfs FORWARD TRANSFER ADMITTANCE (m mhos) VDS = 15 V 4000 3000 2000
FORWARD TRANSFER ADMITTANCE versus DRAIN CURRENT
1000 700 500 300 200 0.2 0.3 0.5 0.7 1.0 ID, DRAIN CURRENT (mA) VDS = 15 V f = 1.0 kHz 2.0 3.0 4.0
Figure 1. VGS(off) = 2.0 Volts
10 9.0 I D, DRAIN CURRENT (mA) 8.0 7.0 6.0 5.0 4.0 3.0 2.0 1.0 0 0 0.5 1.5 2.0 2.5 3.0 1.0 VGS, GATE-SOURCE VOLTAGE (VOLTS) 3.5 4.0 TA = -55C 25C 125C VDS = 15 V Yfs FORWARD TRANSFER ADMITTANCE (m mhos) 10000 7000 5000 3000 2000
Figure 4. VGS(off) = 2.0 Volts
1000 700 500 0.5 0.7 1.0 2.0 3.0 ID, DRAIN CURRENT (mA) 5.0 VDS = 15 V f = 1.0 kHz 7.0
Figure 2. VGS(off) = 4.0 Volts
16 14 I D, DRAIN CURRENT (mA) 12 10 8.0 6.0 4.0 2.0 0 0 1.0 2.0 3.0 4.0 5.0 6.0 VGS, GATE-SOURCE VOLTAGE (VOLTS) 7.0 8.0 TA = -55C 25C 125C Yfs FORWARD TRANSFER ADMITTANCE (m mhos) 10000 7000 5000 3000 2000
Figure 5. VGS(off) = 4.0 Volts
VDS = 15 V
1000 700 500 0.5 0.7 1.0 2.0 3.0 ID, DRAIN CURRENT (mA) VDS = 15 V f = 1.0 kHz 5.0 7.0 10
Figure 3. VGS(off) = 5.0 Volts
Figure 6. VGS(off) = 5.0 Volts
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2N5460 2N5461 2N5462
1000 700 500 300 200 100 70 50 30 20 10 0.1 0.2 0.5 1.0 2.0 ID, DRAIN CURRENT (mA) 5.0 10 IDSS = 3.0 mA 6.0 mA 10 mA 10 VDS = 15 V f = 1.0 kHz C, CAPACITANCE (pF) 9.0 8.0 7.0 6.0 5.0 4.0 3.0 2.0 1.0 0 0 Coss Crss 10 20 30 VDS, DRAIN-SOURCE VOLTAGE (VOLTS) 40 Ciss f = 1.0 MHz VGS = 0
r oss , OUTPUT RESISTANCE (k ohms)
Figure 7. Output Resistance versus Drain Current
Figure 8. Capacitance versus Drain-Source Voltage
10 9.0 NF, NOISE FIGURE (dB) 8.0 7.0 6.0 5.0 4.0 3.0 2.0 1.0 0 1.0 10 100 1000 RS, SOURCE RESISTANCE (k Ohms) 10,000 VDS = 15 V VGS = 0 f = 100 Hz
Figure 9. Noise Figure versus Source Resistance
vi
Crss Ciss ross Coss | yfs | vi
COMMON SOURCE y PARAMETERS FOR FREQUENCIES BELOW 30 MHz yis = j Ciss yos = j Cosp * + 1/ross yfs = yfs | yrs = -j Crss
*Cosp is Coss in parallel with Series Combination of Ciss and Crss.
NOTE: 1. Graphical data is presented for dc conditions. Tabular data is given for pulsed conditions (Pulse Width = 630 ms, Duty Cycle = 10%).
Figure 10. Equivalent Low Frequency Circuit
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2N5460 2N5461 2N5462
PACKAGE DIMENSIONS TO-92 (TO-226AA) CASE 29-11 ISSUE AL
A R P L
SEATING PLANE
B
NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: INCH. 3. CONTOUR OF PACKAGE BEYOND DIMENSION R IS UNCONTROLLED. 4. LEAD DIMENSION IS UNCONTROLLED IN P AND BEYOND DIMENSION K MINIMUM. INCHES MIN MAX 0.175 0.205 0.170 0.210 0.125 0.165 0.016 0.021 0.045 0.055 0.095 0.105 0.015 0.020 0.500 --0.250 --0.080 0.105 --0.100 0.115 --0.135 --MILLIMETERS MIN MAX 4.45 5.20 4.32 5.33 3.18 4.19 0.407 0.533 1.15 1.39 2.42 2.66 0.39 0.50 12.70 --6.35 --2.04 2.66 --2.54 2.93 --3.43 ---
K
XX G H V
1
D J C SECTION X-X N N
STYLE 7: PIN 1. SOURCE 2. DRAIN 3. GATE
DIM A B C D G H J K L N P R V
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Notes
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Notes
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ON Semiconductor and are trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does SCILLC assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. "Typical" parameters which may be provided in SCILLC data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including "Typicals" must be validated for each customer application by customer's technical experts. SCILLC does not convey any license under its patent rights nor the rights of others. SCILLC products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications intended to support or sustain life, or for any other application in which the failure of the SCILLC product could create a situation where personal injury or death may occur. Should Buyer purchase or use SCILLC products for any such unintended or unauthorized application, Buyer shall indemnify and hold SCILLC and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that SCILLC was negligent regarding the design or manufacture of the part. SCILLC is an Equal Opportunity/Affirmative Action Employer.
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