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 2N7002DW
Dual N-Channel MOSFET
3 2 1
65
4
Features:
*Low On-Resistance : 7.5 *Low Input Capacitance: 22PF *Low Out put Capacitance : 11PF *Low Threshole :1 .5V(TYE) *Fast Switching Speed : 11ns
1
2
3
4
5
6
SOT-363(SC-88)
Mechanical Data:
*Case: SOT-363, Molded Plastic *Case Material-UL Flammability Rating 94V-0 *Terminals: Solderable per MIL-STD-202, Method 208 *Weight: 0.006 grams(approx.)
Maximum Ratings (TA=25 C Unless Otherwise Specified)
Rating Drain-Source Voltage Drain-Gate Voltage R GS <1.0M _ Gate-Source Voltage Continuous Drain Current (TA=25 C) Power Dissipation (TA=25 C) Maximax Junction-to-Ambient Operating Junction and Storage Temperature Range Symbol VDS VDGR VGS ID PD R JA TJ, Tstg Value 60 60 20 115 200 625 -55 to 150 Unit V V V mA mW C/W C
Device Marking
2N7002DW= Note 1: Pulse Width Limited by Maximum Junction Temperature
WEITRON
http://www.weitron.com.tw
2N7002DW
Electrical Characteristics
Characteristic (TA=25 C Unless otherwise noted) Symbol Min Typ Max Unit
Static
Drain-Source Breakdown Voltage VGS=0V, ID=10 uA Gate-Threshold Voltage VDS=V GS , ID =-250uA Gate-body Leakage + VGS= _ 20V, VDS=0V Zero Gate Voltage Drain Current VDS=60V, VGS=0V @ Tc=25 C VDS=60V, VGS=0V @ Tc=125 C On-State Drain Current VGS=10V, VDS=7.5V Drain-Source On-Resistance VGS=5V, ID=0.05A @ Tj=25 C VGS=10V, ID=0.5A @ Tj =125 C Forward Transconductance VDS=10V, ID=0.2A V(BR)DSS VGS (th) IGSS IDSS ID (on) 60 1.0 70 1.5 1.0 3.2 4.4 2.0 +10 _ 1.0 500 V V nA uA A
0.5
RDS (on)
gfs
80
7.5 13.5
-
-
mS
Dynamic
Input Capacitance VDS=25V, VGS=0V, f=1MHZ Output Capacitance VDS=25V, VGS=0V, f=1MHZ Reverse Transfer Capacitance VDS=25V, VGS=0V, f=1MHZ Ciss Coss Crss
-
22 11 2.0
50 25 5.0
PF
Switching
Turn-On Time VDD=30V, RL=150 ,ID=0.2A VGEN=10V, RGEN=25 Turn-Off Time VDD=30V, RL=150 , ID=0.2A VGEN=10V, RGEN=25 td(on)
-
7.0
20
nS
td(off )
-
11
20
nS
WEITRON
http://www.weitron.com.tw
2N7002DW
1.0
0.8
I D , DRAIN-SOURCE CURRENT (A)
R DS(ON) , NORMALIZED DRAIN-SOURCE ON-RESIST ANCE
0.6
V GS = 10V 9.0V 8.0V 7.0V 6.5V 6.0V 5.0V 4.5V 4.0V 3.5V 3.0V 2.5V 2.0/1.0V
7
T j = 25C
6 5
V GS = 5.0V
5.5V
4 3 2 1 0
5.0V 0.4
V GS = 10V
0.2
0 0 1 2
3
4
5
0
0.2
0.4
0.6 (A)
0.8
1.0
V DS , DRAIN-SOURCE
V OLTAGE (V)
I D , DRAIN CURRENT
FIG.1 On-Region Characteristics
FIG.2 On-Resistance vs Drain Current
2.0
6
R DS(ON) , NORMALIZED DRAIN-SOURCE ON-RESIST ANCE
1.5
V GS = 10V , I D = 0.5A
R DS(ON) , N RMALIZED DRAIN-SOURCE ON-RESIST ANCE
5
4
I D = 50mA
3
I D = 500mA
1.0
V GS = 5.0V , I D = 0.05A
2
0.5
1
0 -55 -30 -5 20 45 70 95 120 145 Tj , JUNCTION TEMPERA TURE (C)
0 0 2 4 6 8 10 12 14 16 18 V GS , GA TE TO SOURCE VOL TAGE (V)
FIG.3 On-Resistance vs Junction Temperature
FIG.4 On-Resistance vs. Gate-Source Voltage
WEITRON
http://www.weitron.com.tw


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