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2N7002DW Dual N-Channel MOSFET 3 2 1 65 4 Features: *Low On-Resistance : 7.5 *Low Input Capacitance: 22PF *Low Out put Capacitance : 11PF *Low Threshole :1 .5V(TYE) *Fast Switching Speed : 11ns 1 2 3 4 5 6 SOT-363(SC-88) Mechanical Data: *Case: SOT-363, Molded Plastic *Case Material-UL Flammability Rating 94V-0 *Terminals: Solderable per MIL-STD-202, Method 208 *Weight: 0.006 grams(approx.) Maximum Ratings (TA=25 C Unless Otherwise Specified) Rating Drain-Source Voltage Drain-Gate Voltage R GS <1.0M _ Gate-Source Voltage Continuous Drain Current (TA=25 C) Power Dissipation (TA=25 C) Maximax Junction-to-Ambient Operating Junction and Storage Temperature Range Symbol VDS VDGR VGS ID PD R JA TJ, Tstg Value 60 60 20 115 200 625 -55 to 150 Unit V V V mA mW C/W C Device Marking 2N7002DW= Note 1: Pulse Width Limited by Maximum Junction Temperature WEITRON http://www.weitron.com.tw 2N7002DW Electrical Characteristics Characteristic (TA=25 C Unless otherwise noted) Symbol Min Typ Max Unit Static Drain-Source Breakdown Voltage VGS=0V, ID=10 uA Gate-Threshold Voltage VDS=V GS , ID =-250uA Gate-body Leakage + VGS= _ 20V, VDS=0V Zero Gate Voltage Drain Current VDS=60V, VGS=0V @ Tc=25 C VDS=60V, VGS=0V @ Tc=125 C On-State Drain Current VGS=10V, VDS=7.5V Drain-Source On-Resistance VGS=5V, ID=0.05A @ Tj=25 C VGS=10V, ID=0.5A @ Tj =125 C Forward Transconductance VDS=10V, ID=0.2A V(BR)DSS VGS (th) IGSS IDSS ID (on) 60 1.0 70 1.5 1.0 3.2 4.4 2.0 +10 _ 1.0 500 V V nA uA A 0.5 RDS (on) gfs 80 7.5 13.5 - - mS Dynamic Input Capacitance VDS=25V, VGS=0V, f=1MHZ Output Capacitance VDS=25V, VGS=0V, f=1MHZ Reverse Transfer Capacitance VDS=25V, VGS=0V, f=1MHZ Ciss Coss Crss - 22 11 2.0 50 25 5.0 PF Switching Turn-On Time VDD=30V, RL=150 ,ID=0.2A VGEN=10V, RGEN=25 Turn-Off Time VDD=30V, RL=150 , ID=0.2A VGEN=10V, RGEN=25 td(on) - 7.0 20 nS td(off ) - 11 20 nS WEITRON http://www.weitron.com.tw 2N7002DW 1.0 0.8 I D , DRAIN-SOURCE CURRENT (A) R DS(ON) , NORMALIZED DRAIN-SOURCE ON-RESIST ANCE 0.6 V GS = 10V 9.0V 8.0V 7.0V 6.5V 6.0V 5.0V 4.5V 4.0V 3.5V 3.0V 2.5V 2.0/1.0V 7 T j = 25C 6 5 V GS = 5.0V 5.5V 4 3 2 1 0 5.0V 0.4 V GS = 10V 0.2 0 0 1 2 3 4 5 0 0.2 0.4 0.6 (A) 0.8 1.0 V DS , DRAIN-SOURCE V OLTAGE (V) I D , DRAIN CURRENT FIG.1 On-Region Characteristics FIG.2 On-Resistance vs Drain Current 2.0 6 R DS(ON) , NORMALIZED DRAIN-SOURCE ON-RESIST ANCE 1.5 V GS = 10V , I D = 0.5A R DS(ON) , N RMALIZED DRAIN-SOURCE ON-RESIST ANCE 5 4 I D = 50mA 3 I D = 500mA 1.0 V GS = 5.0V , I D = 0.05A 2 0.5 1 0 -55 -30 -5 20 45 70 95 120 145 Tj , JUNCTION TEMPERA TURE (C) 0 0 2 4 6 8 10 12 14 16 18 V GS , GA TE TO SOURCE VOL TAGE (V) FIG.3 On-Resistance vs Junction Temperature FIG.4 On-Resistance vs. Gate-Source Voltage WEITRON http://www.weitron.com.tw |
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