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| Power Transistors 2SB0951 (2SB951), 2SB0951A (2SB951A) Silicon PNP epitaxial planar type darlington 0.70.1 For midium-speed switching Complementary to 2SD1277 and 2SD1277A Features * High forward current transfer ratio hFE * High-speed switching * Full-pack package which can be installed to the heat sink with one screw 16.70.3 Unit: mm 10.00.2 5.50.2 4.20.2 4.20.2 2.70.2 7.50.2 3.10.1 Solder Dip (4.0) 14.00.5 Absolute Maximum Ratings TC = 25C Parameter Collector-base voltage (Emitter open) 2SB0951 2SB0951A VCEO VEBO IC ICP PC Ta = 25C Tj Tstg Symbol VCBO Rating -60 -80 -60 -80 -7 -8 -12 45 2 150 -55 to +150 C C V A A W V Unit V 1.40.1 1.30.2 0.5+0.2 -0.1 0.80.1 2.540.3 5.080.5 Collector-emitter voltage 2SB0951 (Base open) 2SB0951A Emitter-base voltage (Collector open) Collector current Peak collector current Collector power dissipation Junction temperature Storage temperature 123 1: Base 2: Collector 3: Emitter EIAJ: SC-67 TO-220F-A1 Package Internal Connection C B E Electrical Characteristics TC = 25C 3C Parameter Collector-emitter voltage (Base open) Collector-base cutoff current (Emitter open) 2SB0951 2SB0951A 2SB0951 2SB0951A IEBO hFE1 * hFE2 Collector-emitter saturation voltage Base-emitter saturation voltage Transition frequency Turn-on time Storage time Fall time VCE(sat) VBE(sat) fT ton tstg tf ICBO VCB = -60 V, IE = 0 VCB = -80 V, IE = 0 VEB = -7 V, IC = 0 VCE = -3 V, IC = -4 A VCE = -3 V, IC = -8 A IC = -4 A, IB = -8 mA IC = -4 A, IB = -8 mA VCE = -10 V, IC = -1 A, f = 1 MHz IC = -4 A, IB1 = -8 mA, IB2 = 8 mA VCC = -50 V 20 0.5 2.0 1.0 1 000 500 -1.5 -2.0 V V MHz s s s Symbol VCEO Conditions IC = -30 mA, IB = 0 Min -60 -80 -100 -100 -2 10 000 mA A Typ Max Unit V Emitter-base cutoff current (Collector open) Forward current transfer ratio Note) 1. Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 measuring methods for transistors. 2. *: Rank classification Rank hFE1 R 1 000 to 2 500 Q P 2 000 to 5 000 4 000 to 10 000 Note) The part numbers in the parenthesis show conventional part number. Publication date: April 2003 SJD00030BED 1 2SB0951, 2SB0951A PC Ta 50 -8 (1)TC=Ta (2)With a 100x100x2mm Al heat sink (3)With a 50x50x2mm Al heat sink (4)Without heat sink (PC=2W) TC=25C IC VCE Collector-emitter saturation voltage VCE(sat) (V) -100 VCE(sat) IC IC/IB=500 Collector power dissipation PC (W) 40 Collector current IC (A) -6 30 (1) 20 IB=-2.0mA -1.8mA -1.6mA -1.4mA -1.2mA -1.0mA -0.8mA -0.6mA -0.4mA -10 -4 25C TC=100C -1 -25C -2 -0.2mA 10 (3) (4) 0 0 40 (2) 80 120 160 0 0 -1 -2 -3 -4 -5 - 0.1 - 0.1 -1 -10 Ambient temperature Ta (C) Collector-emitter voltage VCE (V) Collector current IC (A) VCE(sat) IC Collector-emitter saturation voltage VCE(sat) (V) -100 VBE(sat) IC -100 IC/IB=500 VBE(sat) IC -100 Base-emitter saturation voltage VBE(sat) (V) -10 (3) -10 TC=-25C 25C 100C Base-emitter saturation voltage VBE(sat) (V) (1) IC/IB=250 (2) IC/IB=500 (3) IC/IB=1000 TC=25 C (1)IC/IB=250 (2)IC/IB=500 (3)IC/IB=1000 TC=25C -10 (1) (2) (3) -1 (2) -1 (1) -1 - 0.1 - 0.1 -1 -10 - 0.01 - 0.1 -1 -10 - 0.1 - 0.1 -1 -10 Collector current IC (A) Collector current IC (A) Collector current IC (A) hFE IC Collector output capacitance C (pF) (Common base, input open circuited) ob 105 VCE=-3V Cob VCB 104 IE=0 f=1MHz TC=25C Safe operation area -100 Non repetitive pulse TC=25C ICP IC t=1ms t=10ms DC Forward current transfer ratio hFE TC=100C 104 -25C Collector current IC (A) 25C 103 -10 10 2 -1 103 10 - 0.1 2SB0951A 2SB0951 102 - 0.1 -1 -10 1 - 0.1 -1 -10 -100 - 0.01 -1 -10 -100 -1 000 Collector current IC (A) Collector-base voltage VCB (V) Collector-emitter voltage VCE (V) 2 SJD00030BED 2SB0951, 2SB0951A Rth t 103 (1)Without heat sink (2)With a 100x100x2mm Al heat sink (1) Thermal resistance Rth (C/W) 102 10 (2) 1 10-1 10-2 10-4 10-3 10-2 10-1 1 10 102 103 104 Time t (s) SJD00030BED 3 Request for your special attention and precautions in using the technical information and semiconductors described in this material (1) An export permit needs to be obtained from the competent authorities of the Japanese Government if any of the products or technologies described in this material and controlled under the "Foreign Exchange and Foreign Trade Law" is to be exported or taken out of Japan. (2) The technical information described in this material is limited to showing representative characteristics and applied circuits examples of the products. It neither warrants non-infringement of intellectual property right or any other rights owned by our company or a third party, nor grants any license. (3) We are not liable for the infringement of rights owned by a third party arising out of the use of the product or technologies as described in this material. (4) The products described in this material are intended to be used for standard applications or general electronic equipment (such as office equipment, communications equipment, measuring instruments and household appliances). Consult our sales staff in advance for information on the following applications: * Special applications (such as for airplanes, aerospace, automobiles, traffic control equipment, combustion equipment, life support systems and safety devices) in which exceptional quality and reliability are required, or if the failure or malfunction of the products may directly jeopardize life or harm the human body. * Any applications other than the standard applications intended. (5) The products and product specifications described in this material are subject to change without notice for modification and/or improvement. At the final stage of your design, purchasing, or use of the products, therefore, ask for the most up-to-date Product Standards in advance to make sure that the latest specifications satisfy your requirements. (6) When designing your equipment, comply with the guaranteed values, in particular those of maximum rating, the range of operating power supply voltage, and heat radiation characteristics. Otherwise, we will not be liable for any defect which may arise later in your equipment. Even when the products are used within the guaranteed values, take into the consideration of incidence of break down and failure mode, possible to occur to semiconductor products. Measures on the systems such as redundant design, arresting the spread of fire or preventing glitch are recommended in order to prevent physical injury, fire, social damages, for example, by using the products. (7) When using products for which damp-proof packing is required, observe the conditions (including shelf life and amount of time let standing of unsealed items) agreed upon when specification sheets are individually exchanged. (8) This material may be not reprinted or reproduced whether wholly or partially, without the prior written permission of Matsushita Electric Industrial Co., Ltd. 2002 JUL |
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