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| Power Transistors 2SC3743 Silicon NPN triple diffusion planar type For high breakdown voltage high-speed switching 0.70.1 10.00.2 5.50.2 2.70.2 4.20.2 Unit: mm 4.20.2 s Features q q q q High-speed switching Wide area of safe operation (ASO) with high breakdown voltage Satisfactory linearity of foward current transfer ratio hFE Full-pack package which can be installed to the heat sink with one screw (TC=25C) Ratings 900 900 800 7 5 3 1 40 2 150 -55 to +150 Unit V V V V A A A W C C 7.50.2 16.70.3 3.10.1 4.0 1.40.1 1.30.2 Solder Dip s Absolute Maximum Ratings Parameter Collector to base voltage Collector to emitter voltage Emitter to base voltage Peak collector current Collector current Base current Collector power TC=25C dissipation Ta=25C Junction temperature Storage temperature Symbol VCBO VCES VCEO VEBO ICP IC IB PC Tj Tstg 14.00.5 0.5 +0.2 -0.1 0.80.1 2.540.25 5.080.5 1 2 3 1:Base 2:Collector 3:Emitter TO-220 Full Pack Package(a) s Electrical Characteristics Parameter Collector cutoff current Emitter cutoff current Collector to emitter voltage Forward current transfer ratio Collector to emitter saturation voltage Base to emitter saturation voltage Transition frequency Turn-on time Storage time Fall time (TC=25C) Symbol ICBO IEBO VCEO hFE1 hFE2 VCE(sat) VBE(sat) fT ton tstg tf Conditions VCB = 900V, IE = 0 VEB = 7V, IC = 0 IC = 10mA, IB = 0 VCE = 5V, IC = 0.1A VCE = 5V, IC = 0.8A IC = 0.8A, IB = 0.16A IC = 0.8A, IB = 0.16A VCE = 5V, IC = 0.1A, f = 1MHz IC = 0.8A, IB1 = 0.16A, IB2 = - 0.32A, VCC = 250V 4 1.0 4.0 1.0 800 6 6 0.6 1.2 V V MHz s s s min typ max 50 50 Unit A A V 1 Power Transistors PC -- Ta 80 5 (1) TC=Ta (2) With a 100 x 100 x 2mm Al heat sink (3) Without heat sink (PC=2.0W) TC=25C 2SC3743 IC -- VCE Collector to emitter saturation voltage VCE(sat) (V) 10 VCE(sat) -- IC IC/IB=5 Collector power dissipation PC (W) 70 60 50 40 30 20 10 0 0 20 40 (2) (1) Collector current IC (A) 4 IB=600mA 3 3 400mA 300mA 1 25C 2 200mA 100mA 0.3 TC=100C 0.1 -25C 1 50mA 20mA 0.03 (3) 0 60 80 100 120 140 160 0 2 4 6 8 10 12 0.01 0.01 0.03 0.1 0.3 1 3 Ambient temperature Ta (C) Collector to emitter voltage VCE (V) Collector current IC (A) VBE(sat) -- IC 30 1000 IC/IB=5 hFE -- IC 100 VCE=5V 30 ton, tstg, tf -- IC Pulsed tw=1ms Duty cycle=1% IC/IB=5 (2IB1=-IB2) VCC=250V TC=25C tstg Base to emitter saturation voltage VBE(sat) (V) Forward current transfer ratio hFE 10 300 Switching time ton,tstg,tf (s) 3 1 100C 0.3 0.1 TC=-25C 25C 100 25C 30 10 -25C 3 1 0.3 0.1 0.01 0.03 TC=100C 10 3 1 0.3 0.1 0.03 0.01 tf ton 0.03 0.01 0.01 0.03 0.1 0.3 1 3 0.1 0.3 1 3 10 0 0.4 0.8 1.2 1.6 2.0 Collector current IC (A) Collector current IC (A) Collector current IC (A) Area of safe operation (ASO) 100 30 Non repetitive pulse TC=25C Collector current IC (A) 10 ICP 3 1 0.3 0.1 0.03 0.01 1 3 10 30 100 300 1000 IC 10ms DC t=1ms Collector to emitter voltage VCE (V) 2 Power Transistors Area of safe operation, reverse bias ASO 8 7 Lcoil=100H IC/IB=5 (2IB1=-IB2) TC=25C 2SC3743 Reverse bias ASO measuring circuit L coil IB1 T.U.T IC Collector current IC (A) 6 5 4 3 2 1 0 0 200 400 600 800 1000 1200 1400 1600 IC ICP Vin -IB2 VCC tW Vclamp Collector to emitter voltage VCE (V) Rth(t) -- t 103 (1) PT=10V x 0.3A (3W) and without heat sink (2) PT=10V x 1.0A (10W) and with a 100 x 100 x 2mm Al heat sink Thermal resistance Rth(t) (C/W) 102 (1) 10 (2) 1 10-1 10-3 10-2 10-1 1 10 102 103 104 Time t (s) 3 |
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