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| Transistors 2SD2177 Silicon NPN epitaxial planer type Unit: mm For low-frequency output amplification Complementary to 2SB1434 I Features * Low collector to emitter saturation voltage VCE(sat) * Ccomplementary pair with 2SB1434 * Allowing supply with the radial taping 6.90.1 1.05 2.50.1 0.05 (1.45) 0.8 0.15 0.7 4.0 0.65 max. 1.0 1.0 0.2 0.45-0.05 +0.1 Parameter Collector to base voltage Collector to emitter voltage Emitter to base voltage Peak collector current Collector current Collector power dissipation * Junction temperature Storage temperature Symbol VCBO VCEO VEBO ICP IC PC Tj Tstg Rating 50 50 5 3 2 1 150 -55 to +150 Unit V V V A A W C C 1.20.1 0.65 max. 0.45+ 0.1 - 0.05 Note) In addition to the lead type shown in the upper figure, the type as shown in the lower figure is also available. 1: Emitter 2: Collector 3: Base MT2 Type Package Note) *: Printed circuit board: Copper foil area of 1 cm2 or more, and the board thickness of 1.7 mm for the collector portion 2.50.1 I Absolute Maximum Ratings Ta = 25C 1 2 3 0.45-0.05 +0.1 2.50.5 2.50.5 (HW Type) I Electrical Characteristics Ta = 25C 3C Parameter Collector cutoff current Collector to base voltage Collector to emitter voltage Emitter to base voltage Forward current transfer ratio *1 Collector to emitter saturation voltage *1 Base to emitter saturation voltage *1 Transition frequency Collector output capacitance Note) *1: Pulse measurement *2: Rank classification Rank hFE1 R 120 to 240 S 170 to 340 No-rank 120 to 340 Symbol ICBO VCBO VCEO VEBO hFE1 *2 hFE2 VCE(sat) VBE(sat) fT Cob Conditions VCB = 20 V, IE = 0 IC = 10 A, IE = 0 IC = 1 mA, IB = 0 IE = 10 A, IC = 0 VCE = 2 V, IC = 200 mA VCE = 2 V, IC = 1 A IC = 1 A, IB = 50 mA IC = 1 A, IB = 50 mA VCB = 10 V, IE = -50 mA, f = 200 MHz VCB = 10 V, IE = 0, f = 1 MHz 50 50 5 120 80 0.15 0.85 110 23 35 0.3 1.2 V V MHz pF 340 Min Typ Max 0.1 Unit A V V V Product of no-rank is not classified and have no indication for rank. 14.50.5 0.5 4.50.1 1 2SD2177 PC Ta 1.2 Transistors IC VCE 2.4 Copper plate at the collector is more than 1 cm2 in area, 1.7 mm in thickness VCE(sat) IC Collector to emitter saturation voltage VCE(sat) (V) Ta = 25C 10 3 1 IC / IB = 20 Collector power dissipation PC (W) 1.0 2.0 Collector current IC (A) 0.8 1.6 IB = 8 mA 1.2 7 mA 6 mA 5 mA 4 mA 3 mA 0.4 2 mA 1 mA 0.3 Ta = 100C 0.1 0.03 0.01 25C -25C 0.6 0.4 0.8 0.2 0.003 0.001 0.01 0.03 0 0 0 20 40 60 80 100 120 140 160 0 2 4 6 8 10 0.1 0.3 1 3 10 Ambient temperature Ta (C) Collector to emitter voltage VCE (V) Collector current IC (A) VBE(sat) IC 100 hFE IC 500 VCE = 2 V fT IE 200 VCB = 10 V Ta = 25C Base to emitter saturation voltage VBE(sat) (V) IC / IB = 10 Forward current transfer ratio hFE 30 10 3 25C 1 0.3 0.1 0.03 0.01 0.01 0.03 Ta = -25C 100C 400 Transition frequency fT (MHz) 160 300 Ta = 100C 25C 120 200 -25C 100 80 40 0.1 0.3 1 3 10 0 0.01 0.03 0.1 0.3 1 3 10 0 -1 -3 -10 -30 -100 Collector current IC (A) Collector current IC (A) Emitter current IE (mA) Cob VCB 60 Collector output capacitance Cob (pF) 50 IE = 0 f = 1 MHz Ta = 25C 40 30 20 10 0 1 3 10 30 100 Collector to base voltage VCB (V) 2 |
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