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Power Transistors
2SD2453
Silicon NPN triple diffusion planar type
Unit: mm
For high current transfer ratio and power amplification Features
* High forward current transfer ratio hFE * Low collector-emitter saturation voltage VCE(sat)
6.50.1 5.30.1 4.350.1
2.30.1 0.50.1
7.30.1
1.80.1
0.8 max.
Absolute Maximum Ratings Ta = 25C
Parameter Collector-base voltage (Emitter open) Collector-emitter voltage (Base open) Emitter-base voltage (Collector open) Collector current Peak collector current * Base current Collector power dissipation Junction temperature Storage temperature Note) Non-repetitive peak collector current Tj Tstg TC = 25C Symbol VCBO VCEO VEBO IC ICP IB PC Rating 80 60 6 2 4 1 10 1 150 -55 to +150 C C Unit V V V A A A W
4.60.1
1.00.1 0.10.05 0.50.1 0.750.1 2.30.1 (5.3) (4.35) (3.0)
2.50.1
(1.8)
1 2 3
1.00.2
1: Base 2: Collector 3: Emitter EIAJ: SC-63 U-G2 Package
Note) Self-supported type package is also prepared.
Electrical Characteristics Ta = 25C
Parameter Collector-emitter voltage (Base open) Collector-base cutoff current (Emitter open) Collector-emitter cutoff current (Base open) Emiter-base cutoff current (Collector open) Forward current transfer ratio * Collector-emitter saturation voltage Transition frequency Symbol VCEO ICBO ICEO IEBO hFE VCE(sat) fT Conditions IC = 25 mA, IB = 0 VCB = 80 V, IE = 0 VCE = 40 V, IB = 0 VEB = 6 V, IC = 0 VCE = 4 V, IC = 0.5 A IC = 2 A, IB = 0.05 A VCE = 12 V, IC = 0.2 A, f = 10 MHz 50 500 Min 60 100 100 100 2 500 1 Typ Max Unit V A A A V MHz
Note) 1. Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 measuring methods for transistors. 2. *: Rank classification Rank hFE Q 500 to 1 000 R 800 to 1 500 S 1 200 to 2 500
(5.5)
Publication date: September 2003
SJD00268AED
1
2SD2453
PC Ta
12
Without heat sink
IC VCE
1.0
IB=1.2mA 1mA 5 TC=25C
IC VBE
Collector power dissipation PC (W)
10
0.8
4 0.7mA 0.6mA
25C
Collector current IC (A)
8
Collector current IC (A)
TC=100C 3
-25C
0.6
0.5mA 0.4mA
6
0.4
0.3mA 0.2mA
2
4
2
0.2
0.1mA
1
0
0
0 40 80 120 160 200
0
2
4
6
8
10
12
0 0 0.2 0.4 0.6 0.8 1.0 1.2
Ambient temperature Ta (C)
Collector-emitter voltage VCE (V)
Base-emitter voltage VBE (V)
VCE(sat) IC
Collector-emitter saturation voltage VCE(sat) (V)
100
IC/IB=40
hFE IC
104
VCE=4V TC=100C 25C -25C
fT I C
104
VCE=12V f=200MHz TC=25C
Forward current transfer ratio hFE
Transition frequency fT (MHz)
10
TC=100C 25C -25C
103
103
1
102
102
0.1
10
10
0.01 0.01
0.1
1
10
1 0.01
0.1
1
10
1 0.01
0.1
1
10
Collector current IC (A)
Collector current IC (A)
Collector current IC (A)
Safe operation area
100
Non repetitive pulse TC=25C
Collector current IC (A)
10
ICP IC t=10ms t=1s t=1ms
1
0.1
0.01
1
10
100
1 000
Collector-emitter voltage VCE (V)
2
SJD00268AED
Request for your special attention and precautions in using the technical information and semiconductors described in this material
(1) An export permit needs to be obtained from the competent authorities of the Japanese Government if any of the products or technologies described in this material and controlled under the "Foreign Exchange and Foreign Trade Law" is to be exported or taken out of Japan. (2) The technical information described in this material is limited to showing representative characteristics and applied circuits examples of the products. It neither warrants non-infringement of intellectual property right or any other rights owned by our company or a third party, nor grants any license. (3) We are not liable for the infringement of rights owned by a third party arising out of the use of the product or technologies as described in this material. (4) The products described in this material are intended to be used for standard applications or general electronic equipment (such as office equipment, communications equipment, measuring instruments and household appliances). Consult our sales staff in advance for information on the following applications: * Special applications (such as for airplanes, aerospace, automobiles, traffic control equipment, combustion equipment, life support systems and safety devices) in which exceptional quality and reliability are required, or if the failure or malfunction of the products may directly jeopardize life or harm the human body. * Any applications other than the standard applications intended. (5) The products and product specifications described in this material are subject to change without notice for modification and/or improvement. At the final stage of your design, purchasing, or use of the products, therefore, ask for the most up-to-date Product Standards in advance to make sure that the latest specifications satisfy your requirements. (6) When designing your equipment, comply with the guaranteed values, in particular those of maximum rating, the range of operating power supply voltage, and heat radiation characteristics. Otherwise, we will not be liable for any defect which may arise later in your equipment. Even when the products are used within the guaranteed values, take into the consideration of incidence of break down and failure mode, possible to occur to semiconductor products. Measures on the systems such as redundant design, arresting the spread of fire or preventing glitch are recommended in order to prevent physical injury, fire, social damages, for example, by using the products. (7) When using products for which damp-proof packing is required, observe the conditions (including shelf life and amount of time let standing of unsealed items) agreed upon when specification sheets are individually exchanged. (8) This material may be not reprinted or reproduced whether wholly or partially, without the prior written permission of Matsushita Electric Industrial Co., Ltd.
2002 JUL

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