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2SK3219-01MR
N-CHANNEL SILICON POWER MOS-FET
Features
High speed switching Low on-resistance No secondary breadown Low driving power Avalanche-proof
FUJI POWER MOS-FET
TO-220F15
Applications
Switching regulators UPS (Uninterruptible Power Supply) DC-DC converters
2.54
3. Source
Maximum ratings and characteristicAbsolute maximum ratings
(Tc=25C unless otherwise specified)
Item Symbol Drain-source voltage VDS Continuous drain current ID Pulsed drain current ID(puls] Gate-source voltage VGS Maximum Avalanche Energy EAV *1 Max. power dissipation Ta=25C PD Tc=25C PD Operating and storage Tch temperature range Tstg Rating 150 40 160 30 387 2.0 70 +150 -55 to +150 Unit V A A V mJ W W C C
Equivalent circuit schematic
Drain(D)
Gate(G) Source(S)
*1 L=420H, Vcc=24V
Electrical characteristics (Tc =25C unless otherwise specified)
Item Drain-source breakdown voltaget Gate threshold voltage Zero gate voltage drain current Gate-source leakage current Drain-source on-state resistance Forward transcondutance Input capacitance Output capacitance Reverse transfer capacitance Turn-on time ton Turn-off time toff Avalanche capability Diode forward on-voltage Reverse recovery time Reverse recovery charge Symbol V(BR)DSS VGS(th) IDSS IGSS RDS(on) gfs Ciss Coss Crss td(on) tr td(off) tf IAV VSD trr Qrr Test Conditions ID=1mA VGS=0V ID=1mA VDS=VGS VDS=150V VGS=0V VGS=30V VDS=0V ID=20A VGS=10V ID=20A VDS=25V VDS=25V VGS=0V f=1MHz VCC=48V ID=40A VGS=10V RGS=10 L=100H Tch=25C IF=40A VGS=0V Tch=25C IF=40A VGS=0V -di/dt=100A/s Tch=25C 40 0.97 180 1.30 1.46
Min.
150 2.5 Tch=25C Tch=125C
Typ.
3.0 1 0.1 10 37 25.0 2650 550 240 21 95 115 60
Max.
3.5 100 0.5 100 43 3980 830 360 32 142 173 90
Units
V V A mA nA m S pF
12.5
ns A V ns C
Thermalcharacteristics
Item Thermal resistance Symbol Rth(ch-c) Rth(ch-a) Test Conditions channel to case channel to ambient
Min.
Typ.
Max.
1.79 62.5
Units
C/W C/W
1
2SK3218-01
Characteristics
Power Dissipation PD=f(Tc)
80 10
FUJI POWER MOSFET
Safe operating area ID=f(VDS):Single Pulse(D=0),Tc=25C
3
70
t= 1s
2
60
10
10s D.C.
50
100s
PD [W]
ID [A]
40
10
1
1ms
30 10ms 20 10
0
t D= t T
100ms
10
T
0 0 25 50 75 100 125 150
10
-1
10
-1
10
0
10
1
10
2
10
3
Tc [C]
VDS [V]
Typical output characteristics ID=f(VDS):80s pulse test,Tc=25C
100 15V VGS=20V 10V 80 7.0V 6.5V 60 6.0V 100
Typical transfer characteristics ID=f(VGS):80s pulse test,VDS=25V,Tch=25C
ID [A]
5.5V 40
5.0V 20 4.5V
ID [A]
0 0 1 2 3 4 5
10
1
0.1
0
2
4
6
8
10
VDS [V]
VGS [V]
Typical forward transconductance gfs=f(ID):80s pulse test,VDS=25V,Tch=25C
10
2
Typical Drain-Source on-State Resistance RDS(on)=f(ID):80s pulse test,Tch=25C
0.12 VGS= 4.5V 0.10
5.0V
5.5V
6.0V
10
1
0.08
RDS(on) [ ]
6.5V 7.0V 0.06 10V 15V 20V 0.04
gfs [s]
10
0
0.02
10
-1
0.00
-1
10
10
0
10
1
10
2
0
20
40
60
80
100
120
ID [A]
ID [A]
2
2SK3218-01
Drain-source on-state resistance RDS(on)=f(Tch):ID=20A,VGS=10V
120 5.0 4.5 100 4.0 3.5 80
FUJI POWER MOSFET
Gate Threshold Voltage vs. Tch VGS(th)=f(Tch):VDS=VGS,ID=1mA
max. 3.0
RDS(on)[m ]
VGS(th) [V]
typ. 2.5 2.0 1.5 1.0 min.
60
max. typ.
40
20 0.5 0 -50 -25 0 25 50 75 100 125 150 0.0
-50
-25
0
25
50
75
100
125
150
Tch [C]
Tch [C]
Typical capacitances C=f(VDS):VGS=0V,f=1MHz
100n 150
Typical Gate Charge Characteristics VGS=f(Qg):ID=40A,Tch=25C
30
125 VDS
25
VGS 10n 100 Vcc=120V 20
VGS [V]
VDS [V]
C [F]
75V 75 15 30V
Ciss
1n Coss
50
10
25 Crss
5
100p -2 10
10
-1
10
0
10
1
10
2
0
0
20
40
60
80
100
120
140
160
180
0 200
VDS [V]
Qg [nC]
Typical Forward Characteristics of Reverse Diode -ID=f(VSD):80s pulse test,Tch=25C
100 90 80 70 10 60 10
Typical Switching Characteristics vs. ID t=f(ID):Vcc=48V,VGS=10V,RG=10
4
3
-ID [A]
t [ns]
50 40 30 20 10 0 0.0 10V 5V VGS=0V
td(off)
10
2
tf
tr
td(on) 0.2 0.4 0.6 0.8 1.0 1.2 1.4 10 -1 10
1
VSD [V]
10
0
10
1
10
2
ID [A]
3
2SK3218-01
Maximum Avalanche Current vs. starting Tch I(AV)=f(starting Tch),Non Repetitive
50 45 40 35
FUJI POWER MOSFET
Transient Thermal Impedance Zth(ch-c)=f(t):D=t/T
10
1
10
0
D=0.5 0.2
Zth(ch-c) [C/W]
0.1 10
-1
30
0.05 0.02 0.01
I(AV) [A]
25 20 15 10 5 0
10
-2
t
0
T
D=
t T
10
0 25 50 75 100 125 150
-3
10
Starting Tch [C]
-6
10
-5
10
-4
10
-3
10
-2
10
-1
10
0
t [sec]
500
Maximum Avalanche energy vs. starting Tch Eas=f(starting Tch):Vcc=24V,I <=40A,Non-Repetitive AV
400
300
Eas [mJ]
200
100
0 0 25 50 75 100 125 150
Starting Tch [C]
4

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