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DATA SHEET
MOS FIELD EFFECT TRANSISTOR
2SK3221
SWITCHING N-CHANNEL POWER MOS FET
DESCRIPTION
The 2SK3221 is N-channel DMOS FET device that features a low gate charge and excellent switching characteristics, and designed for high voltage applications such as switching power supply, AC adapter.
ORDERING INFORMATION
PART NUMBER 2SK3211 PACKAGE Isolated TO-220
FEATURES
* Low gate charge QG = 9 nC TYP. (VDD = 450 V, VGS = 10 V, ID = 2.0 A) * Gate voltage rating 30 V * Low on-state resistance RDS(on) = 4.4 MAX. (VGS = 10 V, ID = 1.0 A) * Avalanche capability ratings * Isolated TO-220 package
ABSOLUTE MAXIMUM RATINGS (TA = 25C)
Drain to Source Voltage (VGS = 0 V) Gate to Source Voltage (VDS = 0 V) Drain Current (DC) (TC = 25C) Drain Current (pulse)
Note1
VDSS VGSS ID(DC) ID(pulse) PT1 PT2 Tch Tstg
600 30 2.0 8.0 2.0 25 150 -55 to +150 2.0 2.7 3.5
V V A A W W C C A mJ V/ns
Total Power Dissipation (TA = 25C) Total Power Dissipation (TC = 25C) Channel Temperature Storage Temperature Single Avalanche Current Single Avalanche Energy Diode Recovery dv/dt
Note2 Note2
IAS EAS dv/dt
Note3
Notes 1. PW 10 s, Duty Cycle 1% 2. Starting Tch = 25C, VDD = 150 V, RG = 25 , VGS = 20 0 V 3. IF 1.0 A, Vclamp = 600 V, di/dt 100 A/ s, TA = 25C
The information in this document is subject to change without notice. Before using this document, please confirm that this is the latest version.
Not all devices/types available in every country. Please check with local NEC representative for availability and additional information.
Document No. D13789EJ1V0DS00 (1st edition) Date Published June 2002 NS CP(K) Printed in Japan
(c)
1998
2SK3221
ELECTRICAL CHARACTERISTICS (TA = 25C)
CHARACTERISTICS Zero Gate Voltage Drain Current Gate Leakage Current Gate Cut-off Voltage Forward Transfer Admittance Drain to Source On-state Resistance Input Capacitance Output Capacitance Reverse Transfer Capacitance Turn-on Delay Time Rise Time Turn-off Delay Time Fall Time Total Gate Charge Gate to Source Charge Gate to Drain Charge Body Diode Forward Voltage Reverse Recovery Time Reverse Recovery Charge SYMBOL IDSS IGSS VGS(off) | yfs | RDS(on) Ciss Coss Crss td(on) tr td(off) tf QG QGS QGD VF(S-D) trr Qrr VDD = 450 V VGS = 10 V ID = 2.0 A IF = 2.0 A, VGS = 0 V IF = 2.0 A, VGS = 0 V di/dt = 50 A/ s TEST CONDITIONS VDS = 600 V, VGS = 0 V VGS = 30 V, VDS = 0 V VDS = 10 V, ID = 1 mA VDS = 10 V, ID = 1.0 A VGS = 10 V, ID = 1.0 A VDS = 10 V VGS = 0 V f = 1 MHz VDD = 150 V, ID = 1.0 A VGS = 10 V RG = 10 2.5 0.5 3.3 290 60 5 7 2 20 10 9 2.4 2 0.9 0.9 2.0 4.4 MIN. TYP. MAX. 100 10 3.5 UNIT
A A
V S pF pF pF ns ns ns ns nC nC nC V
s C
TEST CIRCUIT 1 AVALANCHE CAPABILITY
D.U.T. RG = 25 PG. VGS = 20 0 V BVDSS VDS VGS 0 50 L VDD
TEST CIRCUIT 2 SWITCHING TIME
D.U.T. RL PG. RG RG = 10 VDD ID
90% 90%
VGS VGS
Wave Form
0
10%
VGS
90%
IAS ID VDD
ID ID
Wave Form
0 10%
10%
= 1 s Duty Cycle 1%
td(on) ton
tr td(off)
toff
tf
Starting Tch
TEST CIRCUIT 3 GATE CHARGE
D.U.T. IG = 2 mA 50 RL VDD
PG.
2
Data Sheet D13789EJ1V0DS
2SK3221
TYPICAL CHARACTERISTICS (TA = 25C)
DERATING FACTOR OF FORWARD BIAS SAFE OPERATING AREA
120
TOTAL POWER DISSIPATION vs. CASE TEMPERATURE
25
dT - Percentage of Rated Power - %
100
PT - Total Power Dissipation - W
20
80
15
60
40
10
20
5
0 0 25 50 75 100 125 150 175
0 0 25 50 75 100 125 150 175
TC - Case Temperature - C FORWARD BIAS SAFE OPERATING AREA
TC - Case Temperature - C
100 PW = 100 s
ID - Drain Current - A
10
ID(Pulse) = 8.0 A ID(DC) = 2.0 A
1 ms
1 RDS(on) Limited (VGS = 20 V) 0.1 Power Dissipation Limited 100 ms 10ms 10 100 1000
TC = 25C Single Pulse 0.01 1
VDS - Drain to Source Voltage - V TRANSIENT THERMAL RESISTANCE vs. PULSE WIDTH
100
rth - Transient Thermal Resistance - C/W
Rth(j-A) = 62.5C/W
10 Rth(j-C) = 5.0C/W 1
Single Pulse 0.1
1m 10 m 100 m 1 10 100 1000 PW - Pulse Width - s
Data Sheet D13789EJ1V0DS
3
2SK3221
DRAIN CURRENT vs. DRAIN TO SOURCE VOLTAGE FORWARD TRANSFER CHARACTERISTICS
Pulsed 5
ID - Drain Current - A
VGS = 10 V 8V 6V
ID - Drain Current - A
100 Tch = 125C 75C 10
4 3 2 1 0 0 10 20
1
Tch = 25C -25C
0.1 VDS = 10 V Pulsed
30 40
0
5
10
15
VDS - Drain to Source Voltage - V
VGS - Gate to Source Voltage - V
GATE CUT-OFF VOLTAGE vs. CHANNEL TEMPERATURE | yfs | - Forward Transfer Admittance - S
FORWARD TRANSFER ADMITTANCE vs. DRAIN CURRENT
5
VGS(off) - Gate Cut-off Voltage - V
100
4
VDS = 10 V Pulsed
3
10 Tch = -25C 25C 75C 125C
2
1
1 VDS = 10 V ID = 1 mA 0 -50 0
50
100
150
0.1 0.01
0.1
1
10
Tch - Channel Temperature - C
ID - Drain Current - A
DRAIN TO SOURCE ON-STATE RESISTANCE vs. GATE TO SOURCE VOLTAGE RDS(on) - Drain to Source On-state Resistance - RDS(on) - Drain to Source On-state Resistance -
DRAIN TO SOURCE ON-STATE RESISTANCE vs. DRAIN CURRENT
7 6 5 4 3 2 1 0 0 5 10
Pulsed
Pulsed 7 6 5 4 3 2 1 0 0.1 1 10
ID - Drain Current - A
ID = 2.0 A 1.0 A
VGS = 10 V 20 V
15
VGS - Gate to Source Voltage - V
4
Data Sheet D13789EJ1V0DS
2SK3221
DRAIN TO SOURCE ON-STATE RESISTANCE vs. CHANNEL TEMPERATURE RDS(on) - Drain to Source On-state Resistance - SOURCE TO DRAIN DIODE FORWARD VOLTAGE
9
IF - Diode Forward Current - A
8 7 6 5 4 3 2 1 1.0 A
ID = 2.0 A
100
10
1 VGS = 10 V 0V Pulsed 0 0.5 1 1.5
0.1
VGS = 10 V 0 -50 0 50 100 150
Tch - Channel Temperature - C
VF(S-D) - Source to Drain Voltage - V
CAPACITANCE vs. DRAIN TO SOURCE VOLTAGE
SWITCHING CHARACTERISTICS
100
10000
td(on), tr, td(off), tf - Switching Time - ns
Ciss, Coss, Crss - Capacitance - pF
td(off) 10 tf td(on) tr 1 VDD = 150 V VGS = 10 V RG = 10 1
ID - Drain Current - A
1000 Ciss 100 Coss 10 VGS = 0 V f = 1 MHz 1 10 Crss 100
1 0.1
0.1 0.1
10
VDS - Drain to Source Voltage - V
REVERSE RECOVERY TIME vs. DIODE FORWARD CURRENT
DYNAMIC INPUT/OUTPUT CHARACTERISTICS
10000
trr - Reverse Recovery Time - ns
VDS - Drain to Source Voltage - V
di/dt = 50 A/ s VGS = 0 V
800 ID = 2.0 A 600
16
VGS - Gate to Source Voltage - V
14 VDD = 450 V 300 V 150 V VGS 12 10 8 6 200 VDS 4 2
1000
400
100
10 0.1 1 10 100
IF - Diode Forward Current - A
0 0 4 8 12 16
QG - Gate Charge - nC
0
Data Sheet D13789EJ1V0DS
5
2SK3221
SINGLE AVALANCHE CURRENT vs. INDUCTIVE LOAD SINGLE AVALANCHE ENERGY DERATING FACTOR
100
IAS - Single Avalanche Current - A Energy Derating Factor - %
100 VDD = 150 V RG = 25 VGS = 20 0 V IAS 2.0 A
80
10 IAS = 2.0 A 1 RG = 25 VDD = 150 V VGS = 20 0 V Starting Tch = 25C 0.1 10 100 1m 10 m
60
EAS
=2
.7 m
40
J
20
0
25
50
75
100
125
150
L - Inductive Load - H
Starting Tch - Starting Channel Temperature - C
6
Data Sheet D13789EJ1V0DS
2SK3221
PACKAGE DRAWING (Unit: mm)
Isolated TO-220 (MP-45F)
10.00.3 4.50.2 3.20.2 2.70.2
15.00.3
30.1
12.00.2
EQUIVALENT CIRCUIT
Drain
40.2
13.5 MIN.
Gate
Body Diode
0.70.1 2.54 TYP.
1.30.2 1.50.2 2.54 TYP.
2.50.1 0.650.1
Gate Protection Diode
Source
1. Gate 2. Drain 3. Source
123
Remark The diode connected between the gate and source of the transistor serves as a protector against ESD. When this device actually used, an additional protection circuit is externally required if a voltage exceeding the rated voltage may be applied to this device.
Data Sheet D13789EJ1V0DS
7
2SK3221
* The information in this document is current as of June, 2002. The information is subject to change without notice. For actual design-in, refer to the latest publications of NEC's data sheets or data books, etc., for the most up-to-date specifications of NEC semiconductor products. Not all products and/or types are available in every country. Please check with an NEC sales representative for availability and additional information. * No part of this document may be copied or reproduced in any form or by any means without prior written consent of NEC. NEC assumes no responsibility for any errors that may appear in this document. * NEC does not assume any liability for infringement of patents, copyrights or other intellectual property rights of third parties by or arising from the use of NEC semiconductor products listed in this document or any other liability arising from the use of such products. No license, express, implied or otherwise, is granted under any patents, copyrights or other intellectual property rights of NEC or others. * Descriptions of circuits, software and other related information in this document are provided for illustrative purposes in semiconductor product operation and application examples. The incorporation of these circuits, software and information in the design of customer's equipment shall be done under the full responsibility of customer. NEC assumes no responsibility for any losses incurred by customers or third parties arising from the use of these circuits, software and information. * While NEC endeavours to enhance the quality, reliability and safety of NEC semiconductor products, customers agree and acknowledge that the possibility of defects thereof cannot be eliminated entirely. To minimize risks of damage to property or injury (including death) to persons arising from defects in NEC semiconductor products, customers must incorporate sufficient safety measures in their design, such as redundancy, fire-containment, and anti-failure features. * NEC semiconductor products are classified into the following three quality grades: "Standard", "Special" and "Specific". The "Specific" quality grade applies only to semiconductor products developed based on a customer-designated "quality assurance program" for a specific application. The recommended applications of a semiconductor product depend on its quality grade, as indicated below. Customers must check the quality grade of each semiconductor product before using it in a particular application. "Standard": Computers, office equipment, communications equipment, test and measurement equipment, audio and visual equipment, home electronic appliances, machine tools, personal electronic equipment and industrial robots "Special": Transportation equipment (automobiles, trains, ships, etc.), traffic control systems, anti-disaster systems, anti-crime systems, safety equipment and medical equipment (not specifically designed for life support) "Specific": Aircraft, aerospace equipment, submersible repeaters, nuclear reactor control systems, life support systems and medical equipment for life support, etc. The quality grade of NEC semiconductor products is "Standard" unless otherwise expressly specified in NEC's data sheets or data books, etc. If customers wish to use NEC semiconductor products in applications not intended by NEC, they must contact an NEC sales representative in advance to determine NEC's willingness to support a given application. (Note) (1) "NEC" as used in this statement means NEC Corporation and also includes its majority-owned subsidiaries. (2) "NEC semiconductor products" means any semiconductor product developed or manufactured by or for NEC (as defined above).
M8E 00. 4

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