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| Ordering number : ENA0168 2SK3284 N-Channel Silicon MOSFET 2SK3284 Features * * * General-Purpose Switching Device Applications Low ON-resistance. Low Qg. Ultrahigh-speed switching. Specifications Absolute Maximum Ratings at Ta=25C Parameter Drain-to-Source Voltage Gate-to-Source Voltage Drain Current (DC) Drain Current (Pulse) Allowable Power Dissipation Channel Temperature Storage Temperature Symbol VDSS VGSS ID IDP PD Tch Tstg PW10s, duty cycle1% Tc=25C Conditions Ratings 400 30 10 40 50 150 --55 to +150 Unit V V A A W C C Electrical Characteristics at Ta=25C Parameter Drain-to-Source Breakdown Voltage Zero-Gate Voltage Drain Current Gate-to-Source Leakage Current Cutoff Voltage Forward Transfer Admittance Static Drain-to-Source On-State Resistance Input Capacitance Output Capacitance Reverse Transfer Capacitance Total Gate Charge Turn-ON Delay Time Rise Time Turn-OFF Delay Time Fall Time Diode Forward Voltage Symbol V(BR)DSS IDSS IGSS VGS(off) yfs RDS(on) Ciss Coss Crss Qg td(on) tr td(off) tf VSD Conditions ID=1mA, VGS=0V VDS=320V, VGS=0V VGS=30V, VDS=0V VDS=10V, ID=1mA VDS=10V, ID=6A ID=6A, VGS=15V VDS=20V, f=1MHz VDS=20V, f=1MHz VDS=20V, f=1MHz VDS=200V, VGS=10V, ID=10A See specified Test Circuit. See specified Test Circuit. See specified Test Circuit. See specified Test Circuit. IS=10A, VGS=0V Ratings min 400 1.0 100 3 2.9 5.8 0.43 1150 350 150 40 17 30 150 50 1.2 0.55 4 typ max Unit V mA nA V S pF pF pF nC ns ns ns ns V Note) Although the protection diode is contained between gate and source, be careful of handling enough. Any and all SANYO products described or contained herein do not have specifications that can handle applications that require extremely high levels of reliability, such as life-support systems, aircraft's control systems, or other applications whose failure can be reasonably expected to result in serious physical and/or material damage. Consult with your SANYO representative nearest you before using any SANYO products described or contained herein in such applications. SANYO assumes no responsibility for equipment failures that result from using products at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other parameters) listed in products specifications of any and all SANYO products described or contained herein. SANYO Electric Co.,Ltd. Semiconductor Company TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN 11006QB MS IM TB-00002033 No. A0168-1/4 2SK3284 Package Dimensions unit : mm 7002-001 8.2 7.8 6.2 3 0.4 0.2 0.6 4.2 1.2 8.4 10.0 1.0 2.54 1 2 1.0 2.54 0.3 0.6 5.08 10.0 6.0 0.7 6.2 5.2 7.8 2.5 1 : Gate 2 : Source 3 : Drain SANYO : ZP Switching Time Test Circuit VDD=200V PW=1s D.C.0.5% VGS=15V ID=6A RL=33.3 D VOUT G 2SK3284 RGS=50 P.G S 20 18 16 ID -- VDS 10V 15 V 25 ID -- VGS VDS=10V Tc= --25C 8V Drain Current, ID -- A 20 Drain Current, ID -- A 14 12 10 8 6 4 2 0 0 1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 IT10368 25C 15 7V 75C 10 VGS=6V 5 0 0 2 4 6 8 10 12 14 16 18 20 Drain-to-Source Voltage, VDS -- V Gate-to-Source Voltage, VGS -- V IT10369 No. A0168-2/4 2SK3284 2.0 1.8 RDS(on) -- VGS ID=6A 1.4 RDS(on) -- Tc Static Drain-to-Source On-State Resistance, RDS(on) -- 1.6 1.4 1.2 1.0 0.8 0.6 0.4 0.2 0 4 5 6 7 8 9 10 11 12 13 14 15 Static Drain-to-Source On-State Resistance, RDS(on) -- 1.2 1.0 0.8 Tc=75C 25C --25C 0.6 VG 0.4 =1 S =6 ID V, 5 A 0.2 0 --60 --40 --20 0 20 40 60 80 100 120 140 160 Gate-to-Source Voltage, VGS -- V 2 yfs -- ID IT10370 5 3 2 10 7 5 3 2 1.0 7 5 Case Temperature, Tc -- C IT10371 IS -- VSD VGS=0V Forward Transfer Admittance, yfs -- S VDS=10V 10 5 3 2 C -25 =Tc 7 1.0 7 5 3 2 0.1 2 3 5 C 5 25 C Source Current, IS -- A 7 0.1 7 5 3 2 0.01 7 1.0 2 3 5 7 10 2 3 5 0 0.3 Tc=7 5 C 25C --25C 0.6 0.9 3 2 1.2 1.5 IT10373 5 3 2 Ciss, Coss, Crss -- VDS f=1MHz Ciss Drain Current, ID -- A IT10372 1000 7 Diode Forward Voltage, VSD -- V SW Time -- ID VDD=200V VGS=15V Switching Time, SW Time -- ns 5 3 2 Ciss, Coss, Crss -- pF 1000 7 5 3 2 100 7 5 3 2 10 0 5 10 15 20 25 30 35 40 45 50 td(off) Cos s 100 7 5 3 2 Cr ss tf td(on) tr 10 7 0.1 2 3 5 7 1.0 2 3 5 7 10 2 3 5 Drain-to-Source Voltage, VDS -- V 10 9 IT10374 100 7 5 3 2 Drain Current, ID -- A IT10375 VGS -- Qg VDS=200V ID=10A ASO IDP=40A ID=10A Gate-to-Source Voltage, VGS -- V 8 Drain Current, ID -- A 7 6 5 4 3 2 1 0 0 5 10 15 20 25 30 35 40 45 10 7 5 3 2 1.0 7 5 3 2 0.1 7 5 3 2 1m s 10 ms 10 0m s DC op Operation in this era tio area is limited by RDS(on). n 10s 10 s 10 0 s 0.01 1.0 Tc=25C Single pulse 2 3 5 7 10 2 3 5 7 100 2 3 57 IT10377 Total Gate Charge, Qg -- nC IT10376 Drain-to-Source Voltage, VDS -- V No. A0168-3/4 2SK3284 60 PD -- Tc Allowable Power Dissipation, PD -- W 50 40 30 20 10 0 0 20 40 Case Temperature, Tc -- C 60 80 100 120 140 160 IT10378 Note on usage : Since the 2SK3284 is a MOSFET product, please avoid using this device in the vicinity of highly charged objects. Specifications of any and all SANYO products described or contained herein stipulate the performance, characteristics, and functions of the described products in the independent state, and are not guarantees of the performance, characteristics, and functions of the described products as mounted in the customer's products or equipment. To verify symptoms and states that cannot be evaluated in an independent device, the customer should always evaluate and test devices mounted in the customer's products or equipment. SANYO Electric Co., Ltd. strives to supply high-quality high-reliability products. However, any and all semiconductor products fail with some probability. It is possible that these probabilistic failures could give rise to accidents or events that could endanger human lives, that could give rise to smoke or fire, or that could cause damage to other property. When designing equipment, adopt safety measures so that these kinds of accidents or events cannot occur. Such measures include but are not limited to protective circuits and error prevention circuits for safe design, redundant design, and structural design. In the event that any or all SANYO products(including technical data,services) described or contained herein are controlled under any of applicable local export control laws and regulations, such products must not be exported without obtaining the export license from the authorities concerned in accordance with the above law. No part of this publication may be reproduced or transmitted in any form or by any means, electronic or mechanical, including photocopying and recording, or any information storage or retrieval system, or otherwise, without the prior written permission of SANYO Electric Co., Ltd. Any and all information described or contained herein are subject to change without notice due to product/technology improvement, etc. When designing equipment, refer to the "Delivery Specification" for the SANYO product that you intend to use. Information (including circuit diagrams and circuit parameters) herein is for example only ; it is not guaranteed for volume production. SANYO believes information herein is accurate and reliable, but no guarantees are made or implied regarding its use or any infringements of intellectual property rights or other rights of third parties. This catalog provides information as of January, 2006. Specifications and information herein are subject to change without notice. PS No. A0168-4/4 |
Price & Availability of 2SK3284
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