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| Ordering number : ENN7681 2SK3703 N-Channl Silicon MOSFET 2SK3703 General-Purpose Switching Device Applications Features * * * * Package Dimensions unit : mm 2063A [2SK3703] 10.0 3.2 3.5 7.2 Low ON-resistance. 4V drive. Ultrahigh-speed switching. Motor drive, DC / DC converter. 4.5 2.8 18.1 16.0 5.6 14.0 1.6 1.2 0.75 12 3 2.55 2.4 2.4 0.7 2.55 Specifications Absolute Maximum Ratings at Ta=25C Parameter Drain-to-Source Voltage Gate-to-Source Voltage Drain Current (DC) Drain Current (Pulse) Allowable Power Dissipation Channel Temperature Storage Temperature Symbol VDSS VGSS ID IDP PD Tch Tstg PW10s, duty cycle1% Tc=25C Conditions 1 : Gate 2 : Drain 3 : Source SANYO : TO-220ML Ratings 60 20 30 120 2.0 25 150 --55 to +150 Unit V V A A W W C C 2.55 2.55 Electrical Characteristics at Ta=25C Parameter Drain-to-Source Breakdown Voltage Zero-Gate Voltage Drain Current Gate-to-Source Leakage Current Cutoff Voltage Forward Transfer Admittance Symbol V(BR)DSS IDSS IGSS VGS(off) yfs Conditions ID=1mA, VGS=0 VDS=60V, VGS=0 VGS= 16V, VDS=0 VDS=10V, ID=1mA VDS=10V, ID=15A Ratings min 60 1 10 1.2 13 22 2.6 typ max Unit V A A V S Marking : K3703 Continued on next page. Any and all SANYO products described or contained herein do not have specifications that can handle applications that require extremely high levels of reliability, such as life-support systems, aircraft's control systems, or other applications whose failure can be reasonably expected to result in serious physical and/or material damage. Consult with your SANYO representative nearest you before using any SANYO products described or contained herein in such applications. SANYO assumes no responsibility for equipment failures that result from using products at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other parameters) listed in products specifications of any and all SANYO products described or contained herein. SANYO Electric Co.,Ltd. Semiconductor Company TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN 61504 TS IM TA-100813 No.7681-1/4 2SK3703 Continued from preceding page. Parameter Static Drain-to-Source On-State Resistance Input Capacitance Output Capacitance Reverse Transfer Capacitance Turn-ON Delay Time Rise Time Turn-OFF Delay Time Fall Time Total Gate Charge Gate-to-Source Charge Gate-to-Drain "Miller" Charge Diode Forward Voltage Symbol RDS(on)1 RDS(on)2 Ciss Coss Crss td(on) tr td(off) tf Qg Qgs Qgd VSD Conditions ID=15A, VGS=10V ID=15A, VGS=4V VDS=20V, f=1MHz VDS=20V, f=1MHz VDS=20V, f=1MHz See specified Test Circuit. See specified Test Circuit. See specified Test Circuit. See specified Test Circuit. VDS=30V, VGS=10V, ID=30A VDS=30V, VGS=10V, ID=30A VDS=30V, VGS=10V, ID=30A IS=30A, VGS=0 Ratings min typ 20 28 1780 266 197 16.5 110 166 144 40 6.5 11.5 1.0 1.2 max 26 40 Unit m m pF pF pF ns ns ns ns nC nC nC V Switching Time Test Circuit VIN 10V 0V VIN VDD=30V ID=15A RL=2 D PW=10s D.C.1% VOUT G 2SK3703 P.G 50 S 50 45 40 ID -- VDS V Tc= --25 C 75 C 1.5 2.0 Tc=25C 6V 50 ID -- VGS 25 C 4.5 5.0 IT05387 150 IT05389 VDS=10V 45 40 10 4V 8V Drain Current, ID -- A 35 30 25 20 Drain Current, ID -- A 35 30 25 20 15 10 5 0 0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0 10 5 0 0 0.5 1.0 25 2.5 Tc= 75 --25 C C 3.0 3.5 VGS=3V 15 C 4.0 Drain-to-Source Voltage, VDS -- V 70 IT05386 60 RDS(on) -- VGS Gate-to-Source Voltage, VGS -- V RDS(on) -- Tc ID=15A Static-Drain-to-Source On-State Resistance, RDS(on) -- m Static-Drain-to-Source On-State Resistance, RDS(on) -- m 60 50 50 40 40 30 15 I D= VG A, 4V S= 30 Tc=75C 15 I D= 20 10 S= A, VG V 20 25C --25C 10 0 2 3 4 5 6 7 8 9 10 IT05388 10 0 --50 --25 0 25 50 75 100 125 Gate-to-Source Voltage, VGS -- V Case Temperature, Tc -- C No.7681-2/4 2SK3703 100 yfs -- ID Forward Transfer Admittance, yfs -- S 7 5 5 3 2 10 7 5 3 2 1.0 7 5 3 2 0.1 7 5 3 2 IF -- VSD VGS=0 10 7 5 3 2 1.0 7 5 0.1 Tc -2 =- 25 5C 75 C C 0.01 7 5 3 2 0.001 2 3 5 7 1.0 2 3 5 7 10 2 3 5 0 0.3 0.6 0.9 1.2 IT05391 Drain Current, ID -- A 5 3 IT05390 5 3 2 SW Time -- ID VDD=30V VGS=10V Ciss, Coss, Crss -- VDS f=1MHz Ciss Diode Forward Voltage, VSD -- V Switching Time, SW Time -- ns 100 7 5 tf Ciss, Coss, Crss -- pF 2 td(off) 1000 7 5 3 2 tr 3 2 td(on) 100 7 2 3 5 7 1.0 2 3 5 7 10 2 3 5 0 5 10 15 20 25 30 IT05393 10 0.1 Drain Current, ID -- A 10 9 IT05392 3 2 100 7 5 VGS -- Qg Drain-to-Source Voltage, VDS -- V Gate-to-Source Voltage, VGS -- V VDS=30V ID=30A Drain Current, ID -- A IDP=120A ID=30A DC Tc= 7 Coss Crss ASO 5C 25 C --25 C 2 Forward Current, IF -- A 3 <10s 10 <1 0 s 8 7 6 5 4 3 2 1 0 0 5 10 15 20 25 30 35 40 0 s 3 2 10 7 5 3 2 1.0 7 5 3 2 op Operatuon in this area is limited by RDS(on). 0m s era tio n 10 10 1m s ms 0.1 0.1 Tc=25C Single pulse 2 3 5 7 1.0 2 3 5 7 10 2 3 57 IT05395 Total Gate Charge, Qg -- nC 2.5 IT05394 35 PD -- Ta Allowable Power Dissipation, PD -- W Drain-to-Source Voltage, VDS -- V PD -- Tc Allowable Power Dissipation, PD -- W 30 2.0 25 1.5 20 1.0 15 10 0.5 5 0 0 0 20 40 60 80 100 120 140 160 0 20 40 60 80 100 120 140 160 Ambient Temperature, Ta -- C IT05397 Case Temperature, Tc -- C IT05396 No.7681-3/4 2SK3703 Specifications of any and all SANYO products described or contained herein stipulate the performance, characteristics, and functions of the described products in the independent state, and are not guarantees of the performance, characteristics, and functions of the described products as mounted in the customer's products or equipment. To verify symptoms and states that cannot be evaluated in an independent device, the customer should always evaluate and test devices mounted in the customer's products or equipment. SANYO Electric Co., Ltd. strives to supply high-quality high-reliability products. However, any and all semiconductor products fail with some probability. It is possible that these probabilistic failures could give rise to accidents or events that could endanger human lives, that could give rise to smoke or fire, or that could cause damage to other property. When designing equipment, adopt safety measures so that these kinds of accidents or events cannot occur. Such measures include but are not limited to protective circuits and error prevention circuits for safe design, redundant design, and structural design. In the event that any or all SANYO products(including technical data,services) described or contained herein are controlled under any of applicable local export control laws and regulations, such products must not be expor ted without obtaining the expor t license from the authorities concerned in accordance with the above law. No part of this publication may be reproduced or transmitted in any form or by any means, electronic or mechanical, including photocopying and recording, or any information storage or retrieval system, or otherwise, without the prior written permission of SANYO Electric Co., Ltd. Any and all information described or contained herein are subject to change without notice due to product/technology improvement, etc. When designing equipment, refer to the "Delivery Specification" for the SANYO product that you intend to use. Information (including circuit diagrams and circuit parameters) herein is for example only ; it is not guaranteed for volume production. SANYO believes information herein is accurate and reliable, but no guarantees are made or implied regarding its use or any infringements of intellectual property rights or other rights of third parties. This catalog provides information as of June, 2004. Specifications and information herein are subject to change without notice. PS No.7681-4/4 |
Price & Availability of 2SK3703
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