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| Key Parameters VRRM = 3800 IFAVM = 1620 IFSM = 20.5 VF0 = 1.03 rF = 0.32 V A kA V m Avalanche Rectifier Diode 5SDA 16F3806 Doc. No. 5SYA 1128 - 01 Apr-98 Features * * * * * Optimized for line frequency rectifiers Low on-state voltage, narrow VF-bands for parallel operation Self protected against transient overvoltages Guaranteed maximum avalanche power dissipation Industry standard housing Blocking Part number VRRM VRSM IRRM PRSM 5SDA 16F3806 3800 4180 50 70 50 mA kW kW 5SDA 16F3206 3200 3520 Condition f tP tP tP = 50 Hz = 10 ms = 20 s = 20 s tP Tj Tj Tj Tj = 10 ms = 160C = 160C = 45C = 160C VRRM Mechanical data FM a Mounting force min. max. Acceleration Device unclamped Device clamped Weight Surface creepage distance Air strike distance 20 kN 24 kN 50 m/s2 200 m/s2 0.5 kg 30 mm 20 mm m DS Da ABB Semiconductors AG ABB Semiconductors AG 5SDA 16F3806 On-state IFAVM IFRMS IFSM It VF0 rF VF min VF max 2 Max. average on-state current Max. RMS on-state current Max. peak non-repetitive surge current Limiting load integral Threshold voltage Slope resistance On-state voltage On-state voltage 1620 A 2540 A 20.5 kA 22.3 kA 2100103 A s 207010 A s 1.03 V 0.32 m 1.70 V 2.00 V 3 2 2 Half sine wave, TC = 85C tp tp tp tp IF IF = = = = 10 ms 8.3 ms 10 ms 8.3 ms Tj = Tj = 160C 25C Tj = 160C After surge: VD = VR = 0V = 1000 - 3000 A = 4000 A Thermal Tj RthJC Storage and operating junction temperature range Thermal resistance junction to case RthCH Thermal resistance case to heat sink 40 K/kW Anode side cooled 40 K/kW Cathode side cooled 20 K/kW Double side cooled 10 K/kW Single side cooled 5 K/kW Double side cooled -40...160C Analytical function for transient thermal impedance: 24 Zth Fm = 20...24 kN 20 16 12 8 4 0 10-3 Double Side Cooling ZthJC(t) = i R (K/kW) I (s) 1 11.83 0.432 R (1- e i i =1 2 4.26 0.071 3 1.63 0.01 4 -t/ i ) 4 2.28 [K/kW] 0.0054 2 3 4 5 67 10-2 2 3 4 5 67 10-1 t [s] 2 3 4 5 56 100 2 3 4 5 67 101 For a given case temperature Tc at ambient temperature Ta the maximum on-state current can be calculated as follows: IFAVM = -VF0 + (VF0)2 + 4 * f * rf * P 2 * f 2 * rf or 2 IFAVM (A) T max (C) Rthja (K/kW) f= 2 P (W) Tc (C) RthJC (K/kW) for DC current for half-sine wave for 120el., sine for 60 el., sine VF0 (V) Ta (C) rF () where TJ max - TC P= Rthjc TJ max - TA P= Rthja 1 2.5 3.1 6 Doc. No. 5SYA 1128 - 01 Apr-98 ABB Semiconductors AG Fabrikstrasse 3 CH-5600 Lenzburg, Switzerland Telephone +41 (0)62 888 6419 Fax +41 (0)62 888 6306 |
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