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66191
PROTON RADIATION TOLERANT OPTOCOUPLER
(Single Channel, Electrical EQUIVALENT TO 66099)
Mii
OPTOELECTRONIC PRODUCTS DIVISION
REVISION A
7/14/00
Features: * * * * * Current transfer ratio: 150% typical Base lead provided for conventional transistor biasing Low power consumption High radiation immunity 1000 Vdc isolation test voltage
Applications: * * * * * Military and Space High Reliability Systems Voltage Level Shifting Isolated Receiver Inputs Communication Systems
DESCRIPTION Radiation tests performed on the 66099 optocoupler have shown that the electrical performance of the device after irradiation is an order of magnitude better than the 4N49 optocouplers. The 66191 has the same components and layout in a 6 pin, hermetically sealed leadless chip carrier package. Figures 1 and 2 from the 66099 data sheet illustrate the radiation performance of the device
ABSOLUTE MAXIMUM RATINGS (ta = 25C unless otherwise noted) Storage Temperature..........................................................................................................................................-55C to +150C Operating Free-Air Temperature Range.............................................................................................................-55C to +100C Lead Solder Temperature (10 seconds max)......................................................................................................................240C Input to output Isolation Voltage.........(see Note 1)...........................................................................................................+1kVdc * Input Diode Peak Forward Input Current................................................................. .............................................................................. 50mA Reverse Input Voltage...............................................................................................................................................................7V Input Power Dissipation.......................(see Note 2)............................................................................................................80mW *Output Photodetector Continuous Collector Current................... ...........................................................................................................................50mA Collector-Emitter Voltage........................................................................................................................................................ 40V Emitter-Collector Voltage.......................................................................................................................................................... 5V Collector-Base Voltage............................................................................................................................................................40V Power Dissipation...............................(see Note 3)...........................................................................................................300mW Notes: 1. Measured with input diode leads shorted together and output leads shorted together 2. Derate linearly 0.80mW/C above 25C. 3. Derate linearly 3.0mW/C above 25C. Package Dimensions
0.253 [6.42] 0.237 [6.01] PIN 1 IDENTIFIER
Schematic Diagram
0.087 [2.22] 0.071 [1.81]
1
C
3
0.178 [4.52] 0.162 [4.11] 0.036 [0.91] 0.020 [0.51] 0.113 [2.87] 0.097 [2.46]
2 1 6
3 4 5 0.055 [1.40] 0.045 [1.14] 0.078 [1.99] 0.062 [1.58]
E 6 B
5 4
0.098 [2.49] 0.082 [2.08]
MICROPAC INDUSTRIES, INC. OPTOELECTRONIC PRODUCTS DIVISION * 725 E. Walnut St., Garland, TX 75040 * (972) 272-3571 * Fax (972) 487-6918
www.micropac.com
E-MAIL: optosales@micropac.com
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66191
REVISION A 7/14/00
PROTON RADIATION TOLERANT OPTOCOUPLER. SINGLE CHANNEL
ELECTRICAL CHARACTERISTICS
TA = 25C unless otherwise specified.
PARAMETER
Input Diode Static Reverse Current Input Diode Static Forward Voltage
SYMBOL
IR VF
MIN
.8
TYP
1.8
MAX
100 2
UNITS
A V
TEST CONDITIONS
VR = 3V IF = 10mA
NOTE
OUTPUT TRANSISTOR
TA = 25C unless otherwise specified.
PARAMETER
Collector-Base Breakdown Voltage Collector-Emitter Breakdown Voltage Emitter-Collector Breakdown Voltage Collector-Emitter Dark Current +100C
SYMBOL
V(BR)CBO V(BR)CEO V(BR)ECO ICEO
MIN
40 40 5
TYP
MAX
UNITS
V V V
TEST CONDITIONS
IC = 100A, IF = 0 IC = 1mA, IB = 0, IF = 0 IE = 100A, IF = 0 VCE = 20V,
NOTE
100 20
nA A
COUPLED CHARACTERISTICS
TA = 25C unless otherwise specified.
PARAMETER
Current Transfer Ratio Collector-Emitter Saturation Voltage Input -Output Isolation Current Input to Output Capacitance Rise Time Fall Time NOTES:
SYMBOL
CTR VCE(SAT) II/o CIO tr tf
MIN
100
TYP
MAX
0.3 100
UNITS
% V
nA
TEST CONDITIONS
VCE = 1V, IF = 10mA IF = 20mA, IC=10mA VIN-OUT = 1000V f = 1MHz, VIN-OUT = 1kV VCC = 10V, IF = 10mA, RL = 100 VCC = 10V, IF = 10mA, RL = 100
NOTE
1 1
2.5
5 20 20
pF
s s
1) These parameters are measured between all phototransistor leads shorted together and with both input diode leads shorted together.
RECOMMENDED OPERATING CONDITIONS:
PARAMETER Input Current, Low Level Input Current, High Level Supply Voltage Operating Temperature PART NUMBER 66191-001 66191-101 66191-103 66191-105 SYMBOL IFL IFH VCE TA MIN 0 10 5 -55 MAX 100 20 20 +100 UNITS
A
mA V
C
SELECTION GUIDE
PART DESCRIPTION Proton radiation tolerant optocoupler, commercial Proton radiation tolerant optocoupler, -55 to +100C Temperature range (JAN equivalent) Proton radiation tolerant optocoupler , 100% JANTX screened Proton radiation tolerant optocoupler , 100% JANTXV screened
MICROPAC INDUSTRIES, INC. OPTOELECTRONIC PRODUCTS DIVISION * 725 E. Walnut St., Garland, TX 75040 * (972) 272-3571 * Fax (972) 487-6918
www.micropac.com
E-MAIL: optosales@micropac.com
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