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| 7MBR75GE060 IGBT MODULE 600V / 75A / PIM IGBT Modules Features * High Speed Switching * Voltage Drive * Low Inductance Module Structure * Converter Diode Bridge Dynamic Brake Circuit Applications * Inverter for Motor Drive * AC and DC Servo Drive Amplifier * Uninterruptible Power Supply Maximum ratings and characteristics Absolute maximum ratings (Tc=25C unless without specified) Item Symbol VCES VGES IC Collector current ICP -IC Collector power disspation PC Collector-Emitter voltage VCES Gate-Emitter voltage VGES Collector current IC ICP Collector power disspation PC Repetitive peak reverse voltage VRRM Average forward current IF(AV) Surge current IFSM Repetitive peak reverse voltage VRRM Non-Repetitive peak reverse voltage VRSM Average output current IO Surge current (Non-Repetitive) IFSM It (Non-Repetitive) Collector-Emitter voltage Gate-Emitter voltage Tj Tstg Viso Condition Ra ting 600 20 75 150 75 300 600 20 50 100 200 600 1 50 800 900 50 350 648 +150 -40 to +125 AC 2500 1.7 *1 Unit V V A A A W V V A A W V A A V V A A As C C V N*m Inverter Continuous 1ms 1 device Continuous 1ms 1 device Brake 10ms Converter 50/60Hz sine wave Tj=150C, 10ms Tj=150C, 10ms Operating junction temperature Storage temperature Isolation voltage Mounting screw torque AC : 1 minute *1 Recommendable value : 1.3 to 1.7 N*m (M4) IGBT Module Electrical characteristics (Tj=25C unless without specified) Item Zero gate voltage collector current Gate-Emitter leakage current Gate-Emitter threshold voltage Collector-Emitter saturation voltage Inverter (IGBT) Collector-Emitter voltage Input capacitance Switching time Symbol ICES IGES VGE(th) VCE(sat) -VCE Cies ton tr toff tf trr ICES IGES VCE(sat) ton tr toff tf IRRM trr VFM IRRM Condition VCE=600V, VGE=0V VCE=0V, VGE=20V VCE=20V, IC=75mA VGE=15V chip IC=75A Terminal -IC=75A chip Terminal VGE=0V, VCE=10V, f=1MHz VCC=300V IC=75A VGE=15V RG=33 ohm IF=75A VCES=600V, VGE=0V VCE=0V, VGE=20V IC=50A, VGE=15V VCC=300V IC=50A VGE=15V RG=51ohm VR=600V IF=50A VR=800V Min. 7MBR75GE060 Characteristics Typ. Max. 1.0 0.2 5.5 8.5 2.8 3.1 3.0 3.3 6000 1.2 0.6 1.0 0.35 0.3 1.0 0.1 2.8 0.8 0.6 1.0 0.35 1 0.6 1.55 1.0 Unit mA A V V V V V pF s s s s s mA A V s s s s mA s V mA Brake (IGBT) Converter Reverse recovery time of FRD Zero gate voltage collector current Gate-Emitter leakage current Collector-Emitter saturation voltage Switching time Reverse current Reverse recovery time Forward voltage Reverse current Item Brake (FWD) Thermal Characteristics Symbol Condition Min. Inverter IGBT Inverter FRD Brake IGBT Brake FRD Converter Diode With thermal compound Characteristics Typ. Max. 0.42 1.10 0.63 3.57 2.10 0.05 Unit Thermal resistance ( 1 device ) Rth(j-c) C/W Contact thermal resistance * Rth(c-f) * This is the value which is defined mounting on the additional cooling fin with thermal compound Equivalent Circuit Schematic IGBT Module Characteristics (Representative) Inverter Collector current vs. Collector-Emitter voltage Tj=25C 175 175 7MBR75GE060 Collector current vs. Collector-Emitter voltage Tj=125C 150 150 125 Collector current : Ic [A] Collector current : Ic [A] 0 1 2 3 4 5 6 125 100 100 75 75 50 50 25 25 0 0 1 2 3 4 5 6 Collector-Emitter voltage : VCE [V] Collector-Emitter voltage : VCE [V] 0 Collector-Emitter vs. Gate-Emitter voltage Tj=25C 10 10 Collector-Emitter vs. Gate-Emitter voltage Tj=125C VCE [V] Collector-Emitter voltage : 6 Collector-Emitter voltage : 0 5 10 15 20 25 VCE [V] 8 8 6 4 4 2 2 0 Gate-Emitter voltage : VGE [V] 0 0 5 10 15 20 25 Gate-Emitter voltage : VGE [V] Switching time vs. Collector current Vcc=300V, RG=33 ohm, VGE=15V, Tj=25C Switching time vs. Collector current Vcc=300V, RG=33 ohm, VGE=15V, Tj=125C 1000 Switching time : ton, tr, toff, tf [n sec.] Switching time : ton, tr, toff, tf [n sec.] 0 25 50 75 100 125 1000 100 100 10 Collector current : Ic [A] 10 0 25 50 75 100 125 150 Collector current : Ic [A] IGBT Module 7MBR75GE060 Switching time vs. RG Vcc=300V, Ic=75A, VGE=15V, Tj=25C 500 Dynamic input characteristics Tj=25C 25 1000 Switching time : ton, tr, toff, tf [n sec.] Collector-Emitter voltage : VCE [V] 400 20 300 15 100 200 10 100 5 10 10 Gate resistance : RG [ohm] 100 0 0 200 400 600 800 1000 Gate charge : Qg [nC] 0 1200 Forward current vs. Forward voltage VGE=0V 175 Reverse recovery characteristics trr, Irr, vs. IF 150 Reverse recovery current : Irr [A] Reverse recovery time : trr [n sec.] 125 Forward current : IF [A] 100 100 75 50 25 10 0 1 2 Forward voltage : VF [V] 3 4 0 25 50 75 100 125 150 0 Forward current : IF [A] Transient thermal resistance Reversed biased safe operating area > < +VGE=15V, -VGE < 15V, Tj = 125C, RG = 33 ohm = 700 1 Thermal resistance : Rth (j-c) [C/W] 600 Collector current : Ic [A] 500 400 0.1 300 200 100 0.01 0.001 0.01 Pulse width : PW [sec.] 0.1 1 0 0 100 200 300 400 500 600 Collector-Emitter voltage : VCE [V] Gate-Emitter voltage : VGE [V] IGBT Module 7MBR75GE060 Switching loss vs. Collector current Vcc=300V, RG=33 ohm, VGE=15V 10 Capacitance vs. Collector-Emitter voltage Tj=25C Switching loss : Eon, Eoff, Err [mJ /cycle] 10 8 Capacitance : Cies, Coes, Cres [nF] 6 4 1 2 0 0 25 50 75 100 125 150 Collector current : Ic [A] 0.1 0 5 10 15 20 25 30 35 Collector-Emitter voltage : VCE [V] Converter Diode Forward current vs. Forward voltage 60 50 Forward current : IF [A] 40 30 20 10 0 0 0.5 1.0 Forward voltage : VF [V] 1.5 2.0 IGBT Module Brake Collector current vs. Collector-Emitter voltage Tj=25C 125 125 7MBR75GE060 Collector current vs. Collector-Emitter voltage Tj=125C 100 100 Collector current : Ic [A] 75 Collector current : Ic [A] 0 1 2 3 4 5 75 50 50 25 25 0 0 0 1 2 3 4 5 Collector-Emitter voltage : VCE [V] Collector-Emitter voltage : VCE [V] Collector-Emitter vs. Gate-Emitter voltage Tj=25C Collector-Emitter vs. Gate-Emitter voltage Tj=125C 10 VCE [V] VCE [V] Collector-Emitter voltage : 0 5 10 15 20 25 10 8 8 Collector-Emitter voltage : 6 6 4 4 2 2 0 Gate-Emitter voltage : VGE [V] 0 0 5 10 15 20 25 Gate-Emitter voltage : VGE [V] Switching time vs. Collector current Vcc=300V, RG=51 ohm, VGE=15V, Tj=25C Switching time vs. Collector current Vcc=300V, RG=51 ohm, VGE=15V, Tj=125C 1000 Switching time : ton, tr, toff, tf [n sec.] Switching time : ton, tr, toff, tf [n sec.] 0 20 40 60 80 1000 100 100 10 Collector current : Ic [A] 10 0 20 40 60 Collector current : Ic [A] 80 IGBT Module 7MBR75GE060 Switching time vs. RG Vcc=300V, Ic=50A, VGE=15V, Tj=25C 500 Dynamic input characteristics Tj=25C 25 Switching time : ton, tr, toff, tf [n sec.] Collector-Emitter voltage : VCE [V] 1000 400 20 300 15 100 200 10 100 5 10 10 Gate resistance : RG [ohm] 0 100 0 50 100 150 200 250 300 Gate charge : Qg [nC] 0 Transient thermal resistance 500 Reversed biased safe operating area < > +VGE=15V, -VGE = 15V, Tj < 125C, RG = 51 ohm = Thermal resistance : Rth (j-c) [C/W] 1 Collector current : Ic [A] 400 300 200 0.1 100 0 0.001 0.01 Pulse width PW [sec.] 0.1 1 0 100 200 300 400 500 Collector-Emitter voltage : VCE [V] 600 Capacitance vs. Collector-Emitter voltage Tj=25C 10 Capacitance : Cies, Coes, Cres [nF] 1 0.1 0 5 10 15 20 25 30 35 Collector-Emitter voltage : VCE [V] Gate-Emitter voltage : VGE [V] IGBT Module Outline Drawings, mm 7MBR75GE060 For more information, contact: Collmer Semiconductor, Inc. P.O. Box 702708 Dallas, TX 75370 972-733-1700 972-381-9991 Fax http://www.collmer.com |
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