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| 30-36 GHz GaAs MMIC Power Amplifier AA032P1-00 Features 2.415 1.929 1.099 0.597 0.000 0.000 0.120 0.107 1.143 2.179 2.285 1.937 1.099 0.597 I Single Gate and Drain Biases I 25 dBm Typical P1 dB Output Power at 31 GHz I 11 dB Typical Small Signal Gain I 0.25 m Ti/Pd/Au Gates I 100% On-Wafer RF and DC Testing I 100% Visual Inspection to MIL-STD-883 MT 2010 Chip Outline 1.143 Description Alpha's two-stage reactively-matched Ka band GaAs MMIC power amplifier has a typical P1 dB of 25 dBm with 10 dB associated gain and 15% power added efficiency at 31 GHz. The chip uses Alpha's proven 0.25 m MESFET technology, and is based upon MBE layers and electron beam lithography for the highest uniformity and repeatability. The FETs employ surface passivation to ensure a rugged, reliable part with through-substrate via holes and gold-based backside metallization to facilitate solder or epoxy die attach processes. Single gate and drain bias pads cover both stages, with the added convenience that the chip can be wire bonded from either side for either bias. All chips are screened for gain, output power, efficiency and Sparameters prior to shipment for guaranteed performance. A broad range of applications exist in both the military and commercial areas where high power and gain are required. 2.166 Dimensions indicated in mm. All DC (V) pads are 0.1 x 0.1 mm and RF In, Out pads are 0.07 mm wide. Chip thickness = 0.1 mm. Absolute Maximum Ratings Characteristic Operating Temperature (TC) Storage Temperature (TST) Bias Voltage (VD) Power In (PIN) Junction Temperature (TJ) Value -55C to +90C -65C to +150C 7 VDC 22 dBm 175C Electrical Specifications at 25C (VDS = 6 V, VGS = -1 V) Parameter Drain Current (at Saturation) Small Signal Gain Input Return Loss Output Return Loss Output Power at 1 dB Gain Compression Saturated Output Power Gain at Saturation Thermal Resistance1 F = 30-31, 34-36 GHz F = 30-31, 34-36 GHz F = 30-31, 34-36 GHz F = 31 GHz F = 31 GHz F = 31 GHz Condition Symbol IDS G RLI RLO P1 dB PSAT GSAT JC 24 25 8 Min. Typ.2 400 11 -7 -8 25 27 8 42 -6 -6 Max. 450 Unit mA dB dB dB dBm dBm dB C/W 1. Calculated value based on measurement of discrete FET. 2. Typical represents the median parameter value across the specified frequency range for the median chip. Alpha Industries, Inc. [781] 935-5150 * Fax [617] 824-4579 * Email sales@alphaind.com * www.alphaind.com Specifications subject to change without notice. 12/99A 1 30-36 GHz GaAs MMIC Power Amplifier AA032P1-00 Typical Performance Data 15 10 S21 S22 S11 5 0 -5 -10 -15 -20 -25 -30 -35 26 27 28 29 30 31 32 33 34 35 36 37 38 S12 28 27 26 25 24 23 22 21 20 19 18 17 16 S-Parameter (dB) POUT 35 GHz POUT (dBm) POUT 28 GHz POUT 31 GHz 7 8 9 10 11 12 13 14 15 16 17 18 19 20 21 22 Frequency (GHz) Typical Small Signal Performance S-Parameters (VDS = 6 V) PIN (dBm) Typical Output Power Compression Bias Arrangement .01 F 50 pF VG = -1 V 50 pF .01 F VDS = 6 V Circuit Schematic G D RF IN RF OUT VG SEE G DETAIL A D Detail A VD G D G The AA032P1-00 can be biased from either or both sides for both gate and drain biases. For biasing on, adjust VGS from zero to approximately -1 V. Adjust VDS from zero to the desired value (4 V-6 V recommended). Adjust VGS to achieve the desired IDS (400 mA recommended). For biasing off, reverse the biasing on procedure. D RF OUT RF IN D G G D G D VD VG 2 Alpha Industries, Inc. [781] 935-5150 * Fax [617] 824-4579 * Email sales@alphaind.com * www.alphaind.com Specifications subject to change without notice. 12/99A |
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