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AD500-9 TO52S1
Avalanche Photodiode NIR
Special characteristics:
quantum efficiency > 80 % at 760 - 910 nm high speed, low noise 500 m diameter active area low slope multiplication curve
Parameters:
Active Area Dark Current 1) (M = 100) Total Capacitance 1) (M = 100) Breakdown Voltage UBR (at ID = 2 A) Temperature Coefficient of UBR Spectral Responsivity 1) (at 905 nm, M = 100) Cut-off Frequency (-3dB) Rise Time Optimum Gain Max. Gain "Excess Noise" factor (M = 100) "Excess Noise" index (M = 100) Noise Current (M = 100) N.E.P. (M = 100, 905 nm) Operating Temperature Storage Temperature
AD500-9 TO52S1
0.196 mm2 O 500 m max. 5 nA typ. 0.5 - 1 nA typ. 1.2 pF 120 ... 300 V typ. > 200 V typ. 1.55 V/K min. 55 A/W typ. 60 A/W typ. 0.5 GHz typ. 550 ps 50 - 60 > 200
Package (TO52S1):
CASE
4 3 1
45
ANODE 2.54 5.4 0.2 CATHODE
4.7 0.1
0.9 0.3
2.0 min.
3.6 0.2
sensitive surface
typ. 2.5 typ. 0.2 typ. 1 pA/Hz1/2 typ. 2* 10 W/Hz -20 ... +70 C -60 ... +100 C
-14 1/2
2.7 0.2
0.5 max.
0.4 max.
0.45
Chip: AD500-9
diam. active area: 100 m
1) measurement conditions: Setup of photo current 10 nA at M = 1 and irradiation by an IRED (880 nm, 80 nm bandwith). Increase the photo current up to 1 A, (M = 100) by internal multiplication due to an increasing bias voltage.
3
1
view without window cap
4
www.silicon-sensor.com
Version: 05-04-29 Specification before: SSO-AD-500-9-TO52-S1
www.pacific-sensor.com
13 1.0
0.35 0.2
3.0 0.1
Spectral Responsivity at M = 1
series - 9
0,700 0,600
Sabs (A/W)
Spectral Responsivity at M = 100
series - 9
7 0 ,0 0 6 0 ,0 0 5 0 ,0 0 4 0 ,0 0 3 0 ,0 0 2 0 ,0 0 1 0 ,0 0 0 ,0 0
0,500
Sabs (A/W)
0,400 0,300 0,200 0,100 0,000
4 00 5 00 60 0 70 0 80 0 9 00 1 00 0 1 10 0 W av elength (nm)
400
500
600
700
800
900
1000
1100
W a v e le ng th (nm )
QE for M = 1
series - 9
100,0 90,0 80,0 70,0 60,0
QE
50,0 40,0 30,0 20,0 10,0 0,0
400 500 600 700 800 900 1000 1100
ID = f(UR/UBR)
AD500-9
10,000
W a v e le ngth (nm)
Gain = f(VR)
AD500-9
1000,0
1,000
100,0
Id [nA]
0,100
M
10,0
0,010
0,001 0,000
1,0
0,200 0,400
UR /UBR
0,600
0,800
1,000
0
50
100
150
VR [ V]
200
250
300
Maximum Ratings:
max. electrical power dissipation max. optical peak value, once max. continous optical operation ( Pelectr. = Popt. * Sabs * M * UR ) 100 mW at 22C 200 mW for 1 s IPh (DC) 250 A 1 mA for signal 50 s "on" / 1 ms "off"
Bias supply voltage
Current limiting resistor
Application Hints:
Current should be limited by a protecting resistor or current limiting - IC inside the power supply. Use of low noise read-out - IC. For high gain applications bias voltage should be temperature compensated. For low light level applications, blocking of ambient light should be used.
APD
min. 0,1 F, closest to APD
Diode, protective circuit
Handling Precautions:
Read-out circuit or f.e. 50 Load resistance
Soldering temperature 260 C for max. 10 s. The device must be protected against solder flux vapour! min. Pin - length 2 mm ESD - protection Standard precautionary measures are sufficient. Storage Store devices in conductive foam. Avoid skin contact with window! Clean window with Ethyl alcohol if necessary. Do not scratch or abrade window.
Germany : Silicon Sensor GmbH Ostendstr. 1 12459 Berlin Germany Phone: +49 (0)30-63 99 23 10 Fax: +49 (0)30-63 99 23 33 E-Mail: sales@silicon-sensor.de
International Sales: Silicon Sensor GmbH U.K. Office 35 Orchard Close Stanstead Abbotts, Ware Hertfordshire SG 12 8 AH Phone/Fax: +44 (0)1920/87 20 90 E-Mail: pnsilsensuk@btconnect.com p.nash@silicon-sensor.com
U.S.A. :
Pacific Silicon Sensor, Inc. 5700 Corsa Avenue #105 Westlake Village CA 91362 USA Phone: +1-818-706-3400 Fax: +1-818-889-7053 E-Mail: : sales@pacific-sensor.com

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