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AO6415 P-Channel Enhancement Mode Field Effect Transistor
General Description
The AO6415 uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 2.5V. This device is suitable for use as a load switch or in PWM applications. It is ESD protected. Standard Product AO6415 is Pb-free (meets ROHS & Sony 259 specifications). AO6415L is a Green Product ordering option. AO6415 and AO6415L are electrically identical.
Features
VDS (V) = -20V ID = -3.3A (VGS = -10V) RDS(ON) < 75m (VGS = -10V) RDS(ON) < 100m (VGS = -4.5V) RDS(ON) < 150m (VGS = -2.5V) ESD Rating: 2000V HBM
TSOP6 Top View D D G 16 25 34 D D S
D
G S
Absolute Maximum Ratings TA=25C unless otherwise noted Parameter Symbol VDS Drain-Source Voltage VGS Gate-Source Voltage Continuous Drain Current A Pulsed Drain Current Power Dissipation A
B
Maximum -20 12 -3.3 -2.7 -14 1.25 0.8 -55 to 150
Units V V A
TA=25C TA=70C TA=25C TA=70C ID IDM PD TJ, TSTG
W C
Junction and Storage Temperature Range Thermal Characteristics Parameter Maximum Junction-to-Ambient A Maximum Junction-to-Ambient A Maximum Junction-to-Lead C
Symbol t 10s Steady-State Steady-State RJA RJL
Typ 82 111 56
Max 100 140 70
Units C/W C/W C/W
Alpha & Omega Semiconductor, Ltd.
AO6415
Electrical Characteristics (T J=25C unless otherwise noted) Parameter Symbol STATIC PARAMETERS BVDSS Drain-Source Breakdown Voltage IDSS IGSS VGS(th) ID(ON) Zero Gate Voltage Drain Current Gate-Body leakage current Gate Threshold Voltage On state drain current Conditions ID=-250A, VGS=0V VDS=-16V, VGS=0V TJ=55C VDS=0V, VGS=10V VDS=0V, VGS=12V VDS=VGS ID=-250A VGS=-4.5V, VDS=-5V VGS=-10V, ID=-3.3A RDS(ON) Static Drain-Source On-Resistance TJ=125C VGS=-4.5V, ID=-2A VGS=-2.5V, ID=-1A gFS VSD IS Forward Transconductance VDS=-5V, ID=-3.3A -0.65 IS=-1A,VGS=0V Diode Forward Voltage Maximum Body-Diode Continuous Current -0.6 -20 62 84 80 115 7 -0.82 -1 -1.5 512 VGS=0V, VDS=-10V, f=1MHz VGS=0V, VDS=0V, f=1MHz 77 62 9.2 4.9 VGS=-4.5V, VDS=-10V, ID=-2A 0.8 1.2 11 VGS=-4.5V, VDS=-10V, RL=5, RGEN=3 IF=-2A, dI/dt=100A/s IF=-2A, dI/dt=100A/s
2
Min -20
Typ
Max
Units V
-0.003
-0.5 -2.5 1 10
A A A A
-0.9
-1.4 75 105 100 150
m m m S V A pF pF pF
DYNAMIC PARAMETERS Ciss Input Capacitance Coss Crss Rg Output Capacitance Reverse Transfer Capacitance Gate resistance
620
13 6
nC nC nC
SWITCHING PARAMETERS Qg Total Gate Charge Qgs Gate Source Charge Qgd tD(on) tr tD(off) tf trr Qrr Gate Drain Charge Turn-On DelayTime Turn-On Rise Time Turn-Off DelayTime Turn-Off Fall Time Body Diode Reverse Recovery Time Body Diode Reverse Recovery Charge
13 10 41 15 17 6
ns ns ns ns ns nC
8 34 12 13 4
A: The value of R JA is measured with the device mounted on 1in FR-4 board with 2oz. Copper, in a still air environment with TA =25C. The value in any given application depends on the user's specific board design. The current rating is based on the t 10s thermal resistance rating. B: Repetitive rating, pulse width limited by junction temperature. C. The R JA is the sum of the thermal impedence from junction to lead RJL and lead to ambient. D. The static characteristics in Figures 1 to 6,12,14 are obtained using 80 s pulses, duty cycle 0.5% max. E. These tests are performed with the device mounted on 1 in2 FR-4 board with 2oz. Copper, in a still air environment with TA=25C. The SOA curve provides a single pulse rating. Rev 0 : Nov 2005
THIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET. APPLICATIONS OR USES AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN, FUNCTIONS AND RELIABILITY WITHOUT NOTICE.
Alpha & Omega Semiconductor, Ltd.
AO6415
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
25 -10V 20 -3.5V -ID (A) -ID(A) 15 10 5 0 0 1 2 3 4 5 -VDS (Volts) Fig 1: On-Region Characteristics 140 VGS=-2.5V Normalized On-Resistance 120 RDS(ON) (m) 100 80 60 VGS=-10V 40 20 0 1 2 3 4 0.8 0 25 50 75 100 125 150 175 Temperature (C) Figure 4: On-Resistance vs. Junction Temperature -ID (A) Figure 3: On-Resistance vs. Drain Current and Gate Voltage VGS=-4.5V 1.4 1.6 ID=-1A, VGS=-2.5V ID=-2A, VGS=-4.5V 2 -4.5V 3 VDS=-5V 4
VGS=-2.5V 1 125C 25C
0 0 0.5 1 1.5 2 2.5 3 -VGS(Volts) Figure 2: Transfer Characteristics
1.2
ID=-3.3A, VGS=-10V
1.0
200 ID=-3.3A 160 RDS(ON) (m) -IS (A)
1E+01 1E+00 1E-01 1E-02 1E-03 1E-04 25C 1E-05 125C 25C
120
125C
80
40 0 2 4 6 8 10 -VGS (Volts) Figure 5: On-Resistance vs. Gate-Source Voltage
1E-06 0.0 0.2 0.4 0.6 0.8 1.0 1.2 -VSD (Volts) Figure 6: Body-Diode Characteristics
Alpha & Omega Semiconductor, Ltd.
AO6415
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
5 4 -VGS (Volts) 3 2 1 0 0 1 2 3 4 5 6 -Qg (nC) Figure 7: Gate-Charge Characteristics VDS=-10V ID=-2A 800
Capacitance (pF)
600
Ciss
400
200 Crss 0 0 5
Coss
10
15
20
-VDS (Volts) Figure 8: Capacitance Characteristics
100.00
TJ(Max)=150C TA=25C RDS(ON) limited
20
10s
15
10.00 -ID (Amps)
TJ(Max)=150C TA=25C
100s
Power (W)
1.00 1s 0.10 10s DC
10ms 0.1s
10
5
0.01 0.1 1 -VDS (Volts) Figure 9: Maximum Forward Biased Safe Operating Area (Note E) 10 100
0 0.001 0.01 0.1 1 10 100 1000
Pulse Width (s) Figure 10: Single Pulse Power Rating Junction-toAmbient (Note E)
10 ZJA Normalized Transient Thermal Resistance D=Ton/T TJ,PK=TA+PDM.ZJA.RJA RJA=140C/W 1 In descending order D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse
0.1
PD Ton Single Pulse T
0.01 0.00001
0.0001
0.001
0.01
0.1
1
10
100
1000
Pulse Width (s) Figure 11: Normalized Maximum Transient Thermal Impedance
Alpha & Omega Semiconductor, Ltd.

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