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| AOA400 N-Channel Enhancement Mode Field Effect Transistor General Description The AOA400 uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 2.5V. This device is suitable for use as a load switch or in PWM applications. Standard Product AOA400A400 is Pbfree (meets ROHS & Sony 259 specifications). AOA400L is a Green Product ordering option. AOA400 and AOA400L are electrically identical. Features VDS (V) = 30V ID = 2.8 A (VGS = 10V) RDS(ON) < 85m (VGS = 10V) RDS(ON) < 100m (VGS = 4.5V) RDS(ON) < 140m (VGS = 2.5V) TO-236 (SOT-23) Top View G D S G D S Absolute Maximum Ratings TA=25C unless otherwise noted Parameter Symbol VDS Drain-Source Voltage VGS Gate-Source Voltage Continuous Drain Current A Pulsed Drain Current Power Dissipation A B Maximum 30 12 2.8 2.3 10 1.1 0.73 -55 to 150 Units V V A TA=25C TA=70C TA=25C TA=70C ID IDM PD TJ, TSTG W C Junction and Storage Temperature Range Thermal Characteristics Parameter Maximum Junction-to-Ambient A Maximum Junction-to-Ambient A Maximum Junction-to-Lead C Symbol t 10s Steady-State Steady-State RJA RJL Typ 82 115 55 Max 110 150 80 Units C/W C/W C/W Alpha & Omega Semiconductor, Ltd. AOA400 Electrical Characteristics (TJ=25C unless otherwise noted) Parameter Symbol STATIC PARAMETERS BVDSS Drain-Source Breakdown Voltage IDSS IGSS VGS(th) ID(ON) RDS(ON) Zero Gate Voltage Drain Current Gate-Body leakage current Gate Threshold Voltage On state drain current Conditions ID=250A, VGS=0V VDS=24V, VGS=0V TJ=55C VDS=0V, VGS=12V VDS=VGS ID=250A VGS=4.5V, VDS=5V VGS=10V, ID=2.8A Static Drain-Source On-Resistance TJ=125C VGS=4.5V, ID=2.5A 0.6 10 59 90 68 102 8 0.8 85 130 100 140 1 1.5 390 54.5 41 8 4.2 0.56 1.4 2.9 1.8 23 3.4 10 2.6 1 Min 30 1 5 100 1.5 Typ Max Units V A nA V A m m m S V A pF pF pF nC nC nC ns ns ns ns ns nC gFS VSD IS VGS=2.5V, ID=2A Forward Transconductance VDS=5V, ID=2.8A Diode Forward Voltage IS=1A,VGS=0V Maximum Body-Diode Continuous Current DYNAMIC PARAMETERS Ciss Input Capacitance Coss Output Capacitance Crss Reverse Transfer Capacitance Rg Gate resistance SWITCHING PARAMETERS Qg Total Gate Charge Qgs Gate Source Charge Qgd Gate Drain Charge tD(on) Turn-On DelayTime tr tD(off) tf trr Qrr Turn-On Rise Time Turn-Off DelayTime Turn-Off Fall Time VGS=0V, VDS=15V, f=1MHz VGS=0V, VDS=0V, f=1MHz VGS=4.5V, VDS=15V, ID=2.8A VGS=10V, VDS=15V, RL=5.6, RGEN=6 IF=2.8A, dI/dt=100A/s Body Diode Reverse Recovery Time Body Diode Reverse Recovery Charge IF=2.8A, dI/dt=100A/s A: The value of R JA is measured with the device mounted on 1in2 FR-4 board with 2oz. Copper, in a still air environment with TA =25C. The value in any given application depends on the user's specific board design. The current rating is based on the t 10s thermal resistance rating. B: Repetitive rating, pulse width limited by junction temperature. C. The R JA is the sum of the thermal impedence from junction to lead RJL and lead to ambient. D. The static characteristics in Figures 1 to 6,12,14 are obtained using 80 s pulses, duty cycle 0.5% max. 2 E. These tests are performed with the device mounted on 1 in FR-4 board with 2oz. Copper, in a still air environment with TA=25C. The SOA curve provides a single pulse rating. Rev3: August 2005 THIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET. APPLICATIONS OR USES AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN, FUNCTIONS AND RELIABILITY WITHOUT NOTICE. Alpha & Omega Semiconductor, Ltd. AOA400 TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS 15 12 9 ID (A) 2.5V 6 3 0 0 1 2 3 4 5 VDS (Volts) Fig 1: On-Region Characteristics 150 Normalized On-Resistance 125 RDS(ON) (m) 100 75 50 25 0 2 4 6 8 10 ID (A) Figure 3: On-Resistance vs. Drain Current and Gate Voltage 200 1.0E+01 1.0E+00 150 RDS(ON) (m) ID=2A IS (A) 125C 100 1.0E-01 1.0E-02 1.0E-03 50 25C 1.0E-04 0 0 2 4 6 8 10 VGS (Volts) Figure 5: On-Resistance vs. Gate-Source Voltage 1.0E-05 0.0 0.2 0.4 0.6 0.8 1.0 1.2 VSD (Volts) Figure 6: Body-Diode Characteristics 25C 125C VGS=10V VGS=2.5V 1.8 1.6 1.4 1.2 1 0.8 0 25 50 75 100 125 150 175 Temperature (C) Figure 4: On-Resistance vs. Junction Temperature ID=2A ID(A) 10V 3V 4.5V 6 4 125C VGS=2V 2 25C 0 0 0.5 1 1.5 2 2.5 3 3.5 VGS(Volts) Figure 2: Transfer Characteristics 10 8 VDS=5V VGS=4.5V VGS=10V VGS=4.5V VGS=2.5V Alpha & Omega Semiconductor, Ltd. AOA400 TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS 5 4 VGS (Volts) 3 2 1 0 0 1 2 3 4 5 Qg (nC) Figure 7: Gate-Charge Characteristics 600 VDS=15V ID=2.8A Capacitance (pF) 500 Ciss 400 300 200 100 0 0 5 10 15 20 25 30 VDS (Volts) Figure 8: Capacitance Characteristics Coss Crss 100.0 TJ(Max)=150C TA=25C ID (Amps) 10.0 RDS(ON) limited 1.0 1s 10s DC 0.1 0.1 1 VDS (Volts) Figure 9: Maximum Forward Biased Safe Operating Area (Note E) 10 100 1ms 20 TJ(Max)=150C TA=25C 15 10s Power (W) 100s 0.1s 10ms 10 5 0 0.001 0.01 0.1 1 10 100 1000 Pulse Width (s) Figure 10: Single Pulse Power Rating Junction-toAmbient (Note E) 10 ZJA Normalized Transient Thermal Resistance D=Ton/T TJ,PK=TA+PDM.ZJA.RJA RJA=110C/W In descending order D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse 1 0.1 PD Ton Single Pulse T 0.01 0.00001 0.0001 0.001 0.01 0.1 1 10 100 1000 Pulse Width (s) Figure 11: Normalized Maximum Transient Thermal Impedance Alpha & Omega Semiconductor, Ltd. |
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