View AOF800L_1210269.PDF datasheet online --- IC-ON-LINE

Datasheet File OCR Text:

AO4F800 Asymmetric Dual N-Channel Enhancement Mode Field Effect Transistor
General Description
The AO4F800 uses advanced trench technology to provide excellent RDS(ON) and low gate charge. The two MOSFETs make a compact and efficient switch and synchronous rectifier combination for use in DCDC converters. Standard Product AOF800 is Pb-free (meets ROHS & Sony 259 specifications). AOF800L is a Green Product ordering option. AOF800 and AOF800L are electrically identical.
Features Q1
Q2
VDS (V) = 30V VDS(V) = 30V ID = 8.3A (VGS = 10V) ID=17.7A RDS(ON) < 18m < 6.5m (VGS = 10V) < 8.5m (VGS = 4.5V) RDS(ON) < 27m
D1 D1 G1 G2 S2 S2 S2
1 2 3 4 5 6 7
14 13 12 11 10 9 8
S1 S1 D2/S1 D2/S1 D2/S1 D2/S1 D2/S1
D1
D2
SOIC-14
Q1
Q2
G1 S1
G2 S2
Absolute Maximum Ratings T =25C unless otherwise noted A Symbol Parameter VDS Drain-Source Voltage VGS Gate-Source Voltage Continuous Drain TA=25C A Current ID TA=70C Pulsed Drain Current
B
Max Q1 30 20 8.3 6.7 30 2 1.28 -55 to 150 Typ 47 83 23 Typ 31 59 16
Max Q2 30 20 17.7 13 80 3 2.1 -55 to 150 Max 62.5 110 40 Max 40 75 24
Units V V A
IDM TA=25C PD TJ, TSTG Symbol RJA RJL Symbol RJA RJL
TA=70C Power Dissipation Junction and Storage Temperature Range Parameter: Thermal Characteristics MOSFET Q1 t 10s Maximum Junction-to-AmbientA Steady-State Maximum Junction-to-AmbientA C Steady-State Maximum Junction-to-Lead Parameter: Thermal Characteristics MOSFET Q2 t 10s Maximum Junction-to-AmbientA Maximum Junction-to-Ambient C Maximum Junction-to-Lead
A
W C Units C/W
Units C/W
Steady-State Steady-State
Alpha & Omega Semiconductor, Ltd.
AO4F800 Q1 Electrical Characteristics (TJ=25C unless otherwise noted) Symbol Parameter Conditions ID=250A, VGS=0V VDS=24V, VGS=0V TJ=55C VDS=0V, VGS= 20V VDS=VGS ID=250A VGS=4.5V, VDS=5V VGS=10V, ID=8.3A RDS(ON) gFS VSD IS Static Drain-Source On-Resistance VGS=4.5V, ID=6.7A Forward Transconductance VDS=5V, ID=8.3A 18 Diode Forward Voltage IS=1A Maximum Body-Diode Continuous Current TJ=125C 1 30 15 21 22 23 0.76 1 3 1040 1250 VGS=0V, VDS=15V, f=1MHz VGS=0V, VDS=0V, f=1MHz 190 120 0.7 19.8 VGS=10V, VDS=15V, ID=8.3A 9.8 2.5 3.5 5.2 VGS=10V, VDS=15V, RL=1.8, RGEN=3 IF=8.3A, dI/dt=100A/s
2
Min 30
Typ
Max Units V 1 5 100 A nA V A 18 25 27 m m S V A pF pF pF 0.85 24 12 nC nC nC nC 6.25 6 25 4.3 18 10 ns ns ns ns ns nC
STATIC PARAMETERS BVDSS Drain-Source Breakdown Voltage IDSS IGSS VGS(th) ID(ON) Zero Gate Voltage Drain Current Gate-Body leakage current Gate Threshold Voltage On state drain current
1.8
3
DYNAMIC PARAMETERS Ciss Input Capacitance Coss Crss Rg Output Capacitance Reverse Transfer Capacitance Gate resistance
SWITCHING PARAMETERS Qg(10V) Total Gate Charge Qg Total Gate Charge Qgs Qgd tD(on) tr tD(off) tf trr Qrr Gate Source Charge Gate Drain Charge Turn-On DelayTime Turn-On Rise Time Turn-Off DelayTime Turn-Off Fall Time Body Diode Reverse Recovery time
5 20.5 3.6 15 8
Body Diode Reverse Recovery charge IF=8.3A, dI/dt=100A/s
A: The value of R JA is measured with the device mounted on 1in FR-4 board with 2oz. Copper, in a still air environment with TA =25C. The value in any given application depends on the user's specific board design. The current rating is based on the t 10s thermal resistance rating. B: Repetitive rating, pulse width limited by junction temperature. C. The R JA is the sum of the thermal impedence from junction to lead RJL and lead to ambient. D. The static characteristics in Figures 1 to 6,12,14 are obtained using 80 s pulses, duty cycle 0.5% max. 2 E. These tests are performed with the device mounted on 1 in FR-4 board with 2oz. Copper, in a still air environment with TA=25C. The SOA curve provides a single pulse rating. Rev2: August 2005 THIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET. APPLICATIONS OR USES AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIG FUNCTIONS AND RELIABILITY WITHOUT NOTICE.
Alpha & Omega Semiconductor, Ltd.
AO4F800 Q1 Electrical Characteristics (TJ=25C unless otherwise noted)
30 25 20 ID (A) 15 10 5 0 0 1
4V 10V 4.5V 3.5V ID(A)
30 25 20 125C 15 10 5 0 2 3 4 5 1 1.5 2 2.5 3 3.5 4 VDS=5V
VGS=3V
19
25C
24
VDS=5V, ID=8.8A
VDS (Volts) Fig 1: On-Region Characteristics
VGS (Volts) 1040 Figure 2: Transfer Characteristics
26 VGS=4.5V 22 RDS(ON) (m) Normalized On-Resistance
1.7
180 110 0.7
VGS=10V, VDS=15V, ID=8.8A
1.6 1.5 1.4
ID=8.3A
VGS=10V
18
VGS=10V 14
1.3 VGS=10V, VDS=15V, RL=1.7, RGEN=3 1.2 1.1 1 0.9 0 25 50 75 100
VGS=4.5V
IF=8.8A, dI/dt=100A/s
10 0 5 10 15
IF=8.8A, dI/dt=100A/s
20 25 30 ID (A) Figure 3: On-Resistance vs. Drain Current and Gate Voltage
125
150
Temperature (C) Figure 4: On resistance vs. Junction Temperature
60 50 RDS(ON) (m) 40 30 125C 20 25C 10 2 4 6 8 10 VGS (Volts) Figure 5: On resistance vs. Gate-Source Voltage ID=8.3A
1.0E+01 1.0E+00 1.0E-01 IS (A) 1.0E-02 25C 1.0E-03 1.0E-04 1.0E-05 0.0 0.2 0.4 0.6 0.8 1.0 VSD (Volts) Figure 6: Body-Diode Characteristics 125C
Alpha & Omega Semiconductor, Ltd.
AO4F800 Q1 Electrical Characteristics (TJ=25C unless otherwise noted)
10 8 VGS (Volts) 6 4 2 0 0 4 8 1500 VDS=15V ID=8.3A Capacitance (pF) 1250 1000 750 500 250 Coss Ciss f=1MHz VGS=0V
Crss
19
24
VDS=5V, ID=8.8A
0 12 16 20 0 5 10 15 20 25 30 Qg (nC) Figure 7: Gate-Charge Characteristics VDS (Volts) Figure 8: Capacitance Characteristics 1040
100.0
TJ(Max)=150C, TA=25C
40
180 110 0.7
10.0 ID (A)
1ms
10s VGS=10V, VDS=15V, ID=8.8A 30 100s Power (W)
TJ(Max)=150C TA=25C
10ms 0.1s 1.0 RDS(ON) limited
VGS=10V, VDS=15V, RL=1.7, RGEN=3
1s 10s DC IF=8.8A, dI/dt=100A/s 10
20
0.1 0.1 1
IF=8.8A, dI/dt=100A/s 10 100
VDS (Volts)
0 0.001
0.01
0.1
1
10
100
1000
Figure 9: Maximum Forward Biased Safe Operating Area (Note E)
Pulse Width (s) Figure 10: Single Pulse Power Rating Junction-toAmbient (Note E)
10 ZJA Normalized Transient Thermal Resistance
D=Ton/T TJ,PK=TA+PDM.ZJA.RJA RJA=62.5C/W
In descending order D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse
1
0.1
PD Ton Single Pulse
T
0.01 0.00001
0.0001
0.001
0.01
0.1
1
10
100
1000
Pulse Width (s) Figure 11: Normalized Maximum Transient Thermal Impedance
Alpha & Omega Semiconductor, Ltd.
AO4F800
Q2 Electrical Characteristics (TJ=25C unless otherwise noted) Symbol Parameter Conditions ID=250A, VGS=0V VDS=24V, VGS=0V TJ=55C VDS=0V, VGS= 20V VDS=VGS ID=250A VGS=4.5V, VDS=5V VGS=10V, ID=17.7A RDS(ON) gFS VSD IS Static Drain-Source On-Resistance VGS=4.5V, ID=13A Forward Transconductance VDS=5V, ID=17.7A Diode Forward Voltage IS=1A,VGS=0V Maximum Body-Diode Continuous Current TJ=125C 1 80 5.4 7.56 6.8 82 0.7 1 4.5 6060 VGS=0V, VDS=15V, f=1MHz VGS=0V, VDS=0V, f=1MHz 638 355 0.45 103 VGS=10V, VDS=15V, ID=17.7A 48 18 15 12 VGS=10V, VDS=15V, RL=0.85, RGEN=3 IF=17.7A, dI/dt=100A/s 8 51.5 8.8 33.5 22 14 10 62 11 40 26 0.54 124 57 7270 6.5 9.1 8.5 1.8 Min 30 1 5 100 2.5 Typ Max Units V A nA V A m m S V A pF pF pF nC nC nC nC ns ns ns ns ns nC
STATIC PARAMETERS BVDSS Drain-Source Breakdown Voltage IDSS IGSS VGS(th) ID(ON) Zero Gate Voltage Drain Current Gate-Body leakage current Gate Threshold Voltage On state drain current
DYNAMIC PARAMETERS Ciss Input Capacitance Coss Crss Rg Output Capacitance Reverse Transfer Capacitance Gate resistance
SWITCHING PARAMETERS Qg(10V) Total Gate Charge Qg(4.5V) Total Gate Charge Qgs Qgd tD(on) tr tD(off) tf trr Qrr Gate Source Charge Gate Drain Charge Turn-On DelayTime Turn-On Rise Time Turn-Off DelayTime Turn-Off Fall Time Body Diode Reverse Recovery Time
Body Diode Reverse Recovery Charge IF=17.7A, dI/dt=100A/s
A: The value of R JA is measured with the device mounted on 1in2 FR-4 board with 2oz. Copper, in a still air environment with TA=25C. The value in any given application depends on the user's specific board design. The current rating is based on the t 10s thermal resistance rating. B: Repetitive rating, pulse width limited by junction temperature. C. The R JA is the sum of the thermal impedence from junction to lead RJL and lead to ambient. D. The static characteristics in Figures 1 to 6 are obtained using 80s pulses, duty cycle 0.5% max. E. These tests are performed with the device mounted on 1 in2 FR-4 board with 2oz. Copper, in a still air environment with TA=25C. The SOA curve provides a single pulse rating. Rev2: August 2005 THIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET. APPLICATIONS OR USES AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN, FUNCTIONS AND RELIABILITY WITHOUT NOTICE
Alpha & Omega Semiconductor, Ltd.
AO4F800
Q2 Electrical Characteristics (TJ=25C unless otherwise noted)
60 10V 50 40 ID (A) 30 20 10 0 0 1 2 3 4 5 VDS (Volts) Fig 1: On-Region Characteristics 7.5 7.0 RDS(ON) (m) 6.5 6.0 5.5 5.0 4.5 0 10 20 30 40 50 ID (A) Figure 3: On-Resistance vs. Drain Current and Gate Voltage 16 1.0E+02 1.0E+01 12 RDS(ON) (m) ID=17.7A 125C IS (A) 1.0E+00 1.0E-01 1.0E-02 1.0E-03 1.0E-04 0 2 4 6 8 10 VGS (Volts) Figure 5: On-Resistance vs. Gate-Source Voltage 1.0E-05 0.0 0.2 0.4 0.6 0.8 1.0 VSD (Volts) Figure 6: Body-Diode Characteristics 125C 25C VGS=10V VGS=4.5V Normalized On-Resistance 1.6 ID=17.7A VGS=4.5V VGS=10V 3.5V 40 ID(A) 125C 30 20 10 0 1 1.5 2 2.5 3 3.5 VGS(Volts) Figure 2: Transfer Characteristics 25C 3.0V 4.5V 50 VDS=5V 60
VGS=2.5V
1.4
1.2
1
0.8 0 25 50 75 100 125 150 Temperature (C) Figure 4: On-Resistance vs. Junction Temperature
8
4
25C
Alpha & Omega Semiconductor, Ltd.
AO4F800
Q2 Electrical Characteristics (TJ=25C unless otherwise noted)
10 8 VGS (Volts) 6 4 2 0 0 20 40 60 80 100 120 Qg (nC) Figure 7: Gate-Charge Characteristics 8000 VDS=15V ID=17.7A Capacitance (pF) 6000 Ciss
4000
2000
Crss
Coss
0 0 5 10 15 20 25 30 VDS (Volts) Figure 8: Capacitance Characteristics
100.0 RDS(ON) limited 10ms ID (Amps) 10.0 0.1s 1s 10s DC TJ(Max)=150C TA=25C 100s 1ms Power (W) 10s
100 80 60 40 20 0 0.001
TJ(Max)=150C TA=25C
1.0
0.1 0.1 1 VDS (Volts) Figure 9: Maximum Forward Biased Safe Operating Area (Note E) 10 100
0.01
0.1
1
10
100
1000
Pulse Width (s) Figure 10: Single Pulse Power Rating Junction-toAmbient (Note E)
10 ZJA Normalized Transient Thermal Resistance
D=Ton/T TJ,PK=TA+PDM.ZJA.RJA RJA=40C/W
In descending order D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse
1
0.1
PD Ton
Single Pulse 0.01 0.00001 0.0001 0.001 0.01 0.1 1
T 10 100 1000
Pulse Width (s) Figure 11: Normalized Maximum Transient Thermal Impedance
Alpha & Omega Semiconductor, Ltd.

▲Up To Search▲

Price & Availability of AOF800L

	To Download AOF800L Datasheet File
If you can't view the Datasheet, Please click here to try to view without PDF Reader .