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| AOP606 Complementary Enhancement Mode Field Effect Transistor General Description The AOP606 uses advanced trench technology MOSFETs to provide excellent RDS(ON) and low gate charge. The complementary MOSFETs may be used in inverter and other PWM applications. Standard Product AOP606 is Pb-free (meets ROHS & Sony 259 specifications). AOP606L is a Green Product ordering option. AOP606 and AOP606L are electrically identical. Features n-channel p-channel -60V VDS (V) = 60V ID = 7.9A (VGS=10V) -6.1A RDS(ON) RDS(ON) < 25m (VGS=10V) < 42m (VGS = -10V) < 30m (VGS=4.5V) < 52m (VGS = -4.5V) D2 S2 G2 S1 G1 1 2 3 4 8 7 6 5 D2 D2 D1 D1 D1 G2 S2 G1 S1 PDIP-8 n-channel p-channel Absolute Maximum Ratings TA=25C unless otherwise noted Parameter Max n-channel Symbol VDS Drain-Source Voltage 60 Gate-Source Voltage Continuous Drain Current A Pulsed Drain Current Power Dissipation B Max p-channel -60 20 -6.1 -4.9 -30 3.1 2 -55 to 150 Units V V A VGS TA=25C TA=70C TA=25C TA=70C ID IDM PD TJ, TSTG 20 7.9 6.3 40 3.1 2 -55 to 150 W C Junction and Storage Temperature Range Thermal Characteristics: n-channel and p-channel Parameter t 10s Maximum Junction-to-Ambient A A Steady-State Maximum Junction-to-Ambient C Steady-State Maximum Junction-to-Lead A t 10s Maximum Junction-to-Ambient A Steady-State Maximum Junction-to-Ambient Steady-State Maximum Junction-to-Lead C Symbol RJA RJL RJA RJL Device n-ch n-ch n-ch p-ch p-ch p-ch Typ 30 66 25 30 66 25 Max Units 40 C/W 85 C/W 35 C/W 40 85 35 C/W C/W C/W Alpha & Omega Semiconductor, Ltd. AOP606 N Channel Electrical Characteristics (T =25C unless otherwise noted) J Symbol Parameter Conditions ID=250A, VGS=0V VDS=48V, VGS=0V TJ=55C VDS=0V, VGS= 20V VDS=VGS ID=250A VGS=10V, VDS=5V VGS=10V, ID=7.9A RDS(ON) gFS VSD IS Static Drain-Source On-Resistance VGS=4.5V, ID=7.1A Forward Transconductance VDS=5V, ID=7.9A IS=1A,VGS=0V Diode Forward Voltage Maximum Body-Diode Continuous Current TJ=125C 1 40 17.8 32.2 19.7 30 0.74 1 4 1920 VGS=0V, VDS=15V, f=1MHz VGS=0V, VDS=0V, f=1MHz 155 116 0.65 47.6 VGS=10V, VDS=30V, ID=7.9A 24.2 6 14.4 7.4 VGS=10V, VDS=30V, RL=3.9, RGEN=3 IF=7.9A, dI/dt=100A/s 2 Min 60 Typ Max Units V STATIC PARAMETERS BVDSS Drain-Source Breakdown Voltage IDSS IGSS VGS(th) ID(ON) Zero Gate Voltage Drain Current Gate-Body leakage current Gate Threshold Voltage On state drain current 1 5 100 2.1 3 25 42 30 A nA V A m m S V A pF pF pF DYNAMIC PARAMETERS Ciss Input Capacitance Coss Crss Rg Output Capacitance Reverse Transfer Capacitance Gate resistance 2300 0.8 68 30 nC nC nC nC ns ns ns ns SWITCHING PARAMETERS Qg(10V) Total Gate Charge Qg(4.5V) Total Gate Charge Qgs Qgd tD(on) tr tD(off) tf trr Qrr Gate Source Charge Gate Drain Charge Turn-On DelayTime Turn-On Rise Time Turn-Off DelayTime Turn-Off Fall Time Body Diode Reverse Recovery Time 5.1 28.2 5.5 34 46 41 Body Diode Reverse Recovery Charge IF=7.9A, dI/dt=100A/s ns nC A: The value of R JA is measured with the device mounted on 1in FR-4 board with 2oz. Copper, in a still air environment with TA=25C. The value in any given application depends on the user's specific board design. The current rating is based on the t 10s thermal resistance rating. B: Repetitive rating, pulse width limited by junction temperature. C. The R JA is the sum of the thermal impedence from junction to lead RJL and lead to ambient. D. The static characteristics in Figures 1 to 6 are obtained using 80 s pulses, duty cycle 0.5% max. E. These tests are performed with the device mounted on 1 in 2 FR-4 board with 2oz. Copper, in a still air environment with TA=25C. The SOA curve provides a single pulse rating. Rev 3: Sept 2005 THIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET. APPLICATIONS OR USES AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN, FUNCTIONS AND RELIABILITY WITHOUT NOTICE. Alpha & Omega Semiconductor, Ltd. AOP606 TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS: N-CHANNEL 40 10V 4V 30 4.5V ID(A) 30 25 20 15 10 25C VGS=3V 0 0 1 2 3 4 5 VDS (Volts) Fig 1: On-Region Characteristics 24 Normalized On-Resistance 22 RDS(ON) (m) VGS=4.5V 20 18 VGS=10V 16 14 0 5 10 15 20 ID (A) Figure 3: On-Resistance vs. Drain Current and Gate Voltage 50 ID=7.9A 40 RDS(ON) (m) 125C IS (A) 30 1.0E-01 1.0E-02 1.0E-03 20 25C 1.0E-04 1.0E-05 2 4 6 8 10 0.0 0.2 0.4 0.6 0.8 1.0 VGS (Volts) Figure 5: On-Resistance vs. Gate-Source Voltage VSD (Volts) Figure 6: Body-Diode Characteristics 1.0E+01 1.0E+00 125C 5 0 1.5 2 2.5 3 3.5 4 VGS(Volts) Figure 2: Transfer Characteristics 2.2 2 1.8 1.6 1.4 1.2 1 0.8 0 25 50 75 100 125 150 175 Temperature (C) Figure 4: On-Resistance vs. Junction Temperature VGS=10V ID=7.9A VGS=4.5V ID=7.1A VDS=5V 125C ID (A) 20 3.5V 10 25C 10 Alpha & Omega Semiconductor, Ltd. AOP606 TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS: N-CHANNEL 10 8 VGS (Volts) 6 4 2 500 0 0 10 20 30 40 50 Qg (nC) Figure 7: Gate-Charge Characteristics 0 0 5 10 15 20 25 30 VDS (Volts) Figure 8: Capacitance Characteristics 3500 VDS=15V ID=7.9A Capacitance (pF) 3000 2500 2000 1500 1000 Coss Crss Ciss 100.0 RDS(ON) limited 10.0 0.1s 1s 1.0 TJ(Max)=150C TA=25C 0.1 0.1 1 VDS (Volts) Figure 9: Maximum Forward Biased Safe Operating Area (Note E) 10 100 10s DC 10s Power (W) 50 100s 1ms 10ms 40 30 20 10 0 0.001 TJ(Max)=150C TA=25C ID (Amps) 0.01 0.1 1 10 100 1000 Pulse Width (s) Figure 10: Single Pulse Power Rating Junction-toAmbient (Note E) 10 ZJA Normalized Transient Thermal Resistance D=Ton/T TJ,PK=TA+PDM.ZJA.RJA RJA=40C/W In descending order D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse 1 0.1 PD Ton Single Pulse T 10 100 1000 0.01 0.00001 0.0001 0.001 0.01 0.1 1 Pulse Width (s) Figure 11: Normalized Maximum Transient Thermal Impedance Alpha & Omega Semiconductor, Ltd. AOP606 P-Channel Electrical Characteristics (T =25C unless otherwise noted) J Symbol Parameter Conditions ID=-250A, VGS=0V VDS=-48V, VGS=0V TJ=55C VDS=0V, VGS=20V VDS=VGS ID=-250A VGS=-10V, VDS=-5V VGS=-10V, ID=-6.1A RDS(ON) gFS VSD IS Static Drain-Source On-Resistance VGS=-4.5V, ID=-5.5A Forward Transconductance VDS=-5V, ID=-6.1A Diode Forward Voltage IS=-1A,VGS=0V Maximum Body-Diode Continuous Current TJ=125C -1.2 -30 34 58 42 17.8 -0.73 -1 -3 2417 VGS=0V, VDS=-30V, f=1MHz VGS=0V, VDS=0V, f=1MHz 179 120 1.9 45.2 VGS=-10V, VDS=-30V, ID=-6.1A 22.8 5.8 9.6 9.8 VGS=-10V, VDS=-30V, RL=4.7, RGEN=3 IF=-6.1A, dI/dt=100A/s 6.1 44 12.7 32 42 42 2.3 55 28 2900 42 72 52 -1.9 Min -60 -1 -5 100 -2.4 Typ Max Units V A nA V A m m S V A pF pF pF nC nC nC nC ns ns ns ns ns nC STATIC PARAMETERS BVDSS Drain-Source Breakdown Voltage IDSS IGSS VGS(th) ID(ON) Zero Gate Voltage Drain Current Gate-Body leakage current Gate Threshold Voltage On state drain current DYNAMIC PARAMETERS Ciss Input Capacitance Coss Crss Rg Output Capacitance Reverse Transfer Capacitance Gate resistance SWITCHING PARAMETERS Qg(10V) Total Gate Charge (10V) Qg(4.5V) Total Gate Charge (4.5V) Qgs Qgd tD(on) tr tD(off) tf trr Qrr Gate Source Charge Gate Drain Charge Turn-On DelayTime Turn-On Rise Time Turn-Off DelayTime Turn-Off Fall Time Body Diode Reverse Recovery Time Body Diode Reverse Recovery Charge IF=-6.1A, dI/dt=100A/s 2 A: The value of R JA is measured with the device mounted on 1in FR-4 board with 2oz. Copper, in a still air environment with TA =25C. The value in any in application depends on the the user's specific board design. The current rating is based the the10s10s thermal resistance given application depends on user's specific board design. The current rating is based on on t t thermal resistance rating. B: Repetitive rating, pulse width limited by junction temperature. C. The R JA is the sum of the thermal impedence from junction to lead RJL and lead to ambient. D. The static characteristics in Figures 1 to 6,12,14 are obtained using 80 s pulses, duty cycle 0.5% max. E. These tests are performed with the device mounted on 1 in 2 FR-4 board with 2oz. Copper, in a still air environment with TA=25C. The SOA curve provides a single pulse rating. THIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET. APPLICATIONS OR USES AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN, FUNCTIONS AND RELIABILITY WITHOUT NOTICE. Rev2: August 2005 Alpha & Omega Semiconductor, Ltd. AOP606 TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS: P-CHANNEL 25 -10V 20 15 10 5 VGS=-2.5V 0 0 1 2 3 4 5 -VDS (Volts) Fig 1: On-Region Characteristics 45 Normalized On-Resistance VGS=-4.5V RDS(ON) (m) 40 2.00 1.80 1.60 1.40 1.20 1.00 0.80 0 5 10 15 20 0 25 50 75 100 125 150 175 Temperature (C) Figure 4: On-Resistance vs. Junction Temperature 1.0E+01 ID=-6.1A 1.0E+00 1.0E-01 125C RDS(ON) (m) 60 50 40 25C 30 20 2 6 7 8 9 10 -VGS (Volts) Figure 5: On-Resistance vs. Gate-Source Voltage 3 4 5 -IS (A) 1.0E-02 1.0E-03 1.0E-04 1.0E-05 1.0E-06 0.0 0.2 0.4 0.6 0.8 1.0 -VSD (Volts) Figure 6: Body-Diode Characteristics 25C 125C VGS=-4.5V ID=-5.5A VGS=-10V ID=-6.1A 0 1 1.5 2 2.5 3 3.5 4 -VGS(Volts) Figure 2: Transfer Characteristics -6V -4V -3.5V 30 25 20 -ID (A) -ID(A) 15 10 125C 5 25C VDS=-5V -3V 35 VGS=-10V 30 -ID (A) Figure 3: On-Resistance vs. Drain Current and Gate Voltage 90 80 70 Alpha & Omega Semiconductor, Ltd. AOP606 TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS: P-CHANNEL 10 8 -VGS (Volts) 6 4 2 500 0 0 10 20 30 40 50 -Qg (nC) Figure 7: Gate-Charge Characteristics 0 0 10 20 30 40 50 60 -VDS (Volts) Figure 8: Capacitance Characteristics 3500 VDS=-30V ID=-6.1A Capacitance (pF) 3000 2500 2000 1500 1000 Coss Crss Ciss 100.0 TJ(Max)=150C, TA=25C RDS(ON) limited 0.1s 100s 1ms 10ms 10s Power (W) 40 TJ(Max)=150C TA=25C -ID (Amps) 10.0 30 20 1.0 1s 10s DC 10 0.1 0.1 1 -VDS (Volts) Figure 9: Maximum Forward Biased Safe Operating Area (Note E) 10 100 0 0.001 0.01 0.1 1 10 100 1000 Pulse Width (s) Figure 10: Single Pulse Power Rating Junction-toAmbient (Note E) 10 ZJA Normalized Transient Thermal Resistance D=Ton/T TJ,PK=TA+PDM.ZJA.RJA RJA=40C/W 1 In descending order D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse PD 0.1 Ton Single Pulse 0.01 0.00001 0.0001 0.1 1 10 Pulse Width (s) Figure 11: Normalized Maximum Transient Thermal Impedance 0.001 0.01 100 1000 T Alpha & Omega Semiconductor, Ltd. |
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