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| AP2318GEN Pb Free Plating Product Advanced Power Electronics Corp. Capable of 2.5V gate drive Small outline package RoHS Compliant S SOT-23 G D N-CHANNEL ENHANCEMENT MODE POWER MOSFET BVDSS RDS(ON) ID 30V 720m 1A Description Advanced Power MOSFETs utilized advanced processing techniques to achieve the lowest possible on-resistance, extremely efficient and cost-effectiveness device. The SOT-23 package is universally used for all commercial-industrial applications. D G S Absolute Maximum Ratings Symbol VDS VGS ID@TA=25 ID@TA=70 IDM PD@TA=25 TSTG TJ Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current , VGS @ 4.5V Continuous Drain Current , VGS @ 4.5V Pulsed Drain Current 1,2 3 3 Rating 30 16 1 0.8 2 1.38 0.01 -55 to 150 -55 to 150 Units V V A A A W W/ Total Power Dissipation Linear Derating Factor Storage Temperature Range Operating Junction Temperature Range Thermal Data Symbol Rthj-a Parameter Thermal Resistance Junction-ambient 3 Value Max. 90 Unit /W Data and specifications subject to change without notice 200811051-1/4 AP2318GEN Electrical Characteristics@Tj=25oC(unless otherwise specified) Symbol BVDSS BVDSS/Tj Parameter Drain-Source Breakdown Voltage Test Conditions VGS=0V, ID=250uA Min. 30 0.4 - Typ. 0.04 725 1.1 0.4 0.4 17 44 45 55 30 12 11 Max. Units 720 1200 1.3 -1 -25 30 1.8 48 V V/ m m V mS uA uA uA nC nC nC ns ns ns ns pF pF pF Breakdown Voltage Temperature Coefficient Reference to 25, ID=1mA RDS(ON) Static Drain-Source On-Resistance VGS=4V, ID=500mA VGS=2.5V, ID=200mA VGS(th) gfs IDSS IGSS Qg Qgs Qgd td(on) tr td(off) tf Ciss Coss Crss Gate Threshold Voltage Forward Transconductance Drain-Source Leakage Current (Tj=25 C) Drain-Source Leakage Current (Tj=70oC) o VDS=VGS, ID=250uA VDS=4V, ID=500mA VDS=30V, VGS=0V VDS=24V ,VGS=0V VGS=16V ID=1A VDS=25V VGS=4.5V VDS=15V ID=1A RG=3.3,VGS=5V RD=15 VGS=0V VDS=25V f=1.0MHz Gate-Source Leakage Total Gate Charge 2 Gate-Source Charge Gate-Drain ("Miller") Charge Turn-on Delay Time Rise Time Turn-off Delay Time Fall Time Input Capacitance Output Capacitance Reverse Transfer Capacitance 2 Source-Drain Diode Symbol VSD Parameter Forward On Voltage 2 Test Conditions IS=1A, VGS=0V Min. - Typ. - Max. Units 1.3 V Notes: 1.Pulse width limited by Max. junction temperature. 2.Pulse width <300us , duty cycle <2%. 3.Surface mounted on 1 in2 copper pad of FR4 board ; 270/W when mounted on min. copper pad. 2/4 AP2318GEN 2.5 2.5 2.0 T A = 25 C o 5.0V 4.5V 4.0 V ID , Drain Current (A) TA=150 C 2.0 o 5.0V 4.5V 4.0 V ID , Drain Current (A) 1.5 1.5 1.0 1.0 2.5V 0.5 2.5V 0.5 V G = 1 .5V 0.0 0.0 2.0 4.0 6.0 0.0 0.0 2.0 4.0 V G = 1 .5V 6.0 V DS , Drain-to-Source Voltage (V) V DS , Drain-to-Source Voltage (V) Fig 1. Typical Output Characteristics Fig 2. Typical Output Characteristics 3300 2.0 I D =200mA T A =25 o C 1.6 2300 I D =500mA V G =4V Normalized RDS(ON) RDS(ON) (m ) 1.2 1300 0.8 300 1 2 3 4 5 0.4 -50 0 50 100 150 V GS , Gate-to-Source Voltage (V) T j , Junction Temperature ( C) o Fig 3. On-Resistance v.s. Gate Voltage Fig 4. Normalized On-Resistance v.s. Junction Temperature 2.0 1.0 0.8 1.5 IS(A) 0.6 T j =150 o C 0.4 T j =25 o C Normalized VGS(th) (V) 1.0 0.5 0.2 0.0 0 0.2 0.4 0.6 0.8 1 1.2 0.0 -50 0 50 100 150 V SD , Source-to-Drain Voltage (V) T j , Junction Temperature ( o C) Fig 5. Forward Characteristic of Reverse Diode Fig 6. Gate Threshold Voltage v.s. Junction Temperature 3/4 AP2318GEN f=1.0MHz 12 100 I D =1A VGS , Gate to Source Voltage (V) V DS =15V V DS =20V V DS =25V 9 C (pF) 6 C iss 3 C oss C rss 0 10 0.0 0.5 1.0 1.5 2.0 2.5 1 5 9 13 17 21 25 29 Q G , Total Gate Charge (nC) V DS , Drain-to-Source Voltage (V) Fig 7. Gate Charge Characteristics Fig 8. Typical Capacitance Characteristics 10 1 Normalized Thermal Response (Rthja) Duty factor=0.5 1 0.2 ID (A) 10ms 0.1 0.1 PDM t 0.05 100ms 0.1 T Duty factor = t/T Peak Tj = PDM x Rthja + T a Rthja = 270 /W T A =25 C Single Pulse 0.01 0.1 1 10 o 1s DC 100 0.01 Single Pulse 0.01 0.0001 0.001 0.01 0.1 1 10 100 V DS , Drain-to-Source Voltage (V) t , Pulse Width (s) Fig 9. Maximum Safe Operating Area Fig 10. Effective Transient Thermal Impedance 2.0 V DS =5V 1.5 VG QG 4.5V ID , Drain Current (A) T j =25 o C 1.0 T j =150 o C QGS QGD 0.5 Charge 0.0 Q 0 2 4 6 V GS , Gate-to-Source Voltage (V) Fig 11. Transfer Characteristics Fig 12. Gate Charge Circuit 4/4 |
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