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| AP2761I-A Pb Free Plating Product Advanced Power Electronics Corp. Repetitive Avalanche Rated Fast Switching Simple Drive Requirement RoHS Compliant G S D N-CHANNEL ENHANCEMENT MODE POWER MOSFET BVDSS RDS(ON) ID 650V 1.0 10A Description AP2761 series are specially designed as main switching devices for universal 90~265VAC off-line AC/DC converter applications. TO-220CFM type provide high blocking voltage to overcome voltage surge and sag in the toughest power system with the best combination of fast G D switching,ruggedized design and cost-effectiveness. S TO-220CFM(I) Absolute Maximum Ratings Symbol VDS VGS ID@TC=25 ID@TC=100 IDM PD@TC=25 EAS IAR TSTG TJ Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current, V GS @ 10V Continuous Drain Current, V GS @ 10V Pulsed Drain Current 1 Rating 650 30 10 6.4 36 37 0.3 65 10 -55 to 150 -55 to 150 Units V V A A A W W/ mJ A Total Power Dissipation Linear Derating Factor Single Pulse Avalanche Energy2 Avalanche Current Storage Temperature Range Operating Junction Temperature Range Thermal Data Symbol Rthj-c Rthj-a Parameter Thermal Resistance Junction-case Thermal Resistance Junction-ambient Max. Max. Value 3.4 65 Units /W /W Data & specifications subject to change without notice 200706053-1/4 AP2761I-A Electrical Characteristics@Tj=25 C(unless otherwise specified) Symbol BVDSS BVDSS/Tj o Parameter Drain-Source Breakdown Voltage Test Conditions VGS=0V, ID=1mA Min. 650 2 - Typ. 0.6 4.8 53 10 15 16 20 82 36 2770 320 8 Max. Units 1 4 10 100 100 V V/ V S uA uA nA nC nC nC ns ns ns ns pF pF pF Breakdown Voltage Temperature Coefficient Reference to 25, ID=1mA RDS(ON) VGS(th) gfs IDSS IGSS Qg Qgs Qgd td(on) tr td(off) tf Ciss Coss Crss Static Drain-Source On-Resistance Gate Threshold Voltage Forward Transconductance Drain-Source Leakage Current (Tj=25oC) Drain-Source Leakage Current (Tj=150 C) o VGS=10V, ID=5A VDS=VGS, ID=250uA VDS=10V, ID=5A VDS=600V, VGS=0V VDS=480V, VGS=0V VGS=30V ID=10A VDS=520V VGS=10V VDD=320V ID=10A RG=10,VGS=10V RD=32 VGS=0V VDS=15V f=1.0MHz Gate-Source Leakage Total Gate Charge 3 Gate-Source Charge Gate-Drain ("Miller") Charge Turn-on Delay Time Rise Time Turn-off Delay Time Fall Time Input Capacitance Output Capacitance Reverse Transfer Capacitance 3 Source-Drain Diode Symbol VSD trr Qrr Notes: 1.Pulse width limited by safe operating area. 2.Starting Tj=25 C , VDD=50V , L=1.2mH , RG=25 , IAS=10A. 3.Pulse width <300us , duty cycle <2%. o Parameter Forward On Voltage 3 Test Conditions IS=10A, VGS=0V IS=10A, VGS=0V, dI/dt=100A/s Min. - Typ. 610 8.64 Max. Units 1.5 V ns C Reverse Recovery Time Reverse Recovery Charge 2/4 AP2761I-A 14 8 12 T C =25 C ID , Drain Current (A) 10 o 10V 6.0V ID , Drain Current (A) T C =150 o C 6 10V 5.0V 8 4.5V 4 6 5.0V 4 2 V G =4.0V 2 V G =4.0V 0 0 0 5 10 15 20 25 0 5 10 15 20 25 V DS , Drain-to-Source Voltage (V) V DS , Drain-to-Source Voltage (V) Fig 1. Typical Output Characteristics Fig 2. Typical Output Characteristics 1.2 2.8 2.4 I D =5A V G =10V Normalized BVDSS (V) 1.1 Normalized RDS(ON) 2 1.6 1 1.2 0.8 0.9 0.4 0.8 -50 0 50 100 150 0 -50 0 50 100 150 T j , Junction Temperature ( C) o T j , Junction Temperature ( o C ) Fig 3. Normalized BVDSS v.s. Junction Temperature 100 5 Fig 4. Normalized On-Resistance v.s. Junction Temperature 4 10 IS (A) 1 VGS(th) (V) T j = 150 o C T j = 25 o C 3 2 0.1 1 0.01 0.1 0.3 0.5 0.7 0.9 1.1 1.3 1.5 0 -50 0 50 100 150 V SD , Source-to-Drain Voltage (V) T j , Junction Temperature ( o C) Fig 5. Forward Characteristic of Reverse Diode Fig 6. Gate Threshold Voltage v.s. Junction Temperature 3/4 AP2761I-A 16 10000 f=1.0MHz I D =10A VGS , Gate to Source Voltage (V) C iss 12 C (pF) V DS =330V V DS =410V V DS =520V 8 C oss 100 4 C rss 0 0 10 20 30 40 50 60 70 80 1 1 5 9 13 17 21 25 29 Q G , Total Gate Charge (nC) V DS , Drain-to-Source Voltage (V) Fig 7. Gate Charge Characteristics Fig 8. Typical Capacitance Characteristics 100 1 Duty factor=0.5 10 Normalized Thermal Response (Rthjc) 0.2 ID (A) 1 1ms 10ms 100ms 1s DC 0.1 0.1 0.05 0.02 PDM t 0.01 0.1 T Duty factor = t/T Peak Tj = PDM x Rthjc + T C T c =25 o C Single Pulse 0.01 0.1 1 10 100 Single Pulse 0.01 1000 10000 0.00001 0.0001 0.001 0.01 0.1 1 10 V DS , Drain-to-Source Voltage (V) t , Pulse Width (s) Fig 9. Maximum Safe Operating Area Fig 10. Effective Transient Thermal Impedance VDS 90% VG QG 10V QGS QGD 10% VGS td(on) tr td(off) t f Charge Q Fig 11. Switching Time Waveform Fig 12. Gate Charge Waveform 4/4 |
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