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APT10045JLL
1000V 21A
S G D
0.450
S
POWER MOS 7
(R)
R
MOSFET
Power MOS 7 is a new generation of low loss, high voltage, N-Channel enhancement mode power MOSFETS. Both conduction and switching (R) losses are addressed with Power MOS 7 by significantly lowering RDS(ON) (R) and Qg. Power MOS 7 combines lower conduction and switching losses along with exceptionally fast switching speeds inherent with APT's patented metal gate structure. * Lower Input Capacitance * Lower Miller Capacitance * Lower Gate Charge, Qg
MAXIMUM RATINGS
Symbol VDSS ID IDM VGS VGSM PD TJ,TSTG TL IAR EAR EAS Parameter Drain-Source Voltage Continuous Drain Current @ TC = 25C Pulsed Drain Current
1
SO
ISOTOP (R)
2 T-
27
"UL Recognized"
* Increased Power Dissipation * Easier To Drive * Popular SOT-227 Package
D G S
All Ratings: TC = 25C unless otherwise specified.
APT0045JLL UNIT Volts Amps
1000 21 84 30 40 460 3.68 -55 to 150 300 21 50
4
Gate-Source Voltage Continuous Gate-Source Voltage Transient Total Power Dissipation @ TC = 25C Linear Derating Factor Operating and Storage Junction Temperature Range Lead Temperature: 0.063" from Case for 10 Sec. Avalanche Current
1
Volts Watts W/C C Amps mJ
(Repetitive and Non-Repetitive)
1
Repetitive Avalanche Energy
Single Pulse Avalanche Energy
2500
STATIC ELECTRICAL CHARACTERISTICS
Symbol BVDSS ID(on) RDS(on) IDSS IGSS VGS(th) Characteristic / Test Conditions Drain-Source Breakdown Voltage (VGS = 0V, ID = 250A) On State Drain Current
2
MIN
TYP
MAX
UNIT Volts Amps
1000 21 0.450 100 500 100 3 5
(VDS > I D(on) x R DS(on) Max, VGS = 10V)
2
Drain-Source On-State Resistance
(VGS = 10V, 11.5A)
Ohms A nA Volts
3-2003 050-7015 Rev D
Zero Gate Voltage Drain Current (VDS = 1000V, VGS = 0V) Zero Gate Voltage Drain Current (VDS = 800V, VGS = 0V, TC = 125C) Gate-Source Leakage Current (VGS = 30V, VDS = 0V) Gate Threshold Voltage (VDS = VGS, ID = 2.5mA)
CAUTION: These Devices are Sensitive to Electrostatic Discharge. Proper Handling Procedures Should Be Followed.
APT Website - http://www.advancedpower.com
DYNAMIC CHARACTERISTICS
Symbol Ciss Coss Crss Qg Qgs Qgd td(on) tr td(off) tf Eon Eoff Eon Eoff Characteristic Input Capacitance Output Capacitance Reverse Transfer Capacitance Total Gate Charge
3
APT10045JLL
Test Conditions
VGS = 0V VDS = 25V f = 1 MHz VGS = 10V VDD = 500V ID = 23A @ 25C RESISTIVE SWITCHING VGS = 15V VDD = 500V ID = 23A @ 25C RG = 1.6 6 INDUCTIVE SWITCHING @ 25C VDD = 670V, VGS = 15V ID = 23A, RG = 5 6 INDUCTIVE SWITCHING @ 125C VDD = 670V VGS = 15V ID = 23A, RG = 5
MIN
TYP
MAX
UNIT
4350 715 120 154 26 97 10 5 30 8 639 380 1046 451 J ns
nC pF
Gate-Source Charge Gate-Drain ("Miller") Charge Turn-on Delay Time Rise Time Turn-off Delay Time Fall Time Turn-on Switching Energy Turn-off Switching Energy Turn-on Switching Energy Turn-off Switching Energy
SOURCE-DRAIN DIODE RATINGS AND CHARACTERISTICS
Symbol IS ISM VSD t rr
rr dv/ dt
Characteristic / Test Conditions Continuous Source Current (Body Diode) Pulsed Source Current Diode Forward Voltage
1 2
MIN
TYP
MAX
UNIT Amps Volts ns C
21 84 1.3 560 5.5 10
(Body Diode) (VGS = 0V, IS = -ID21A)
Reverse Recovery Time (IS = -ID21A, dl S/dt = 100A/s) Reverse Recovery Charge (IS = -ID21A, dl S/dt = 100A/s) Peak Diode Recovery
dv/ dt 5
Q
V/ns
THERMAL CHARACTERISTICS
Symbol RJC RJA Characteristic Junction to Case Junction to Ambient MIN TYP MAX UNIT C/W
0.27 40
1 Repetitive Rating: Pulse width limited by maximum junction temperature 2 Pulse Test: Pulse width < 380 s, Duty Cycle < 2% 3 See MIL-STD-750 Method 3471
4 Starting Tj = +25C, L = 11.34mH, RG = 25, Peak IL = 21A 5 dv/dt numbers reflect the limitations of the test circuit rather than the device itself. IS -ID21A di/dt 700A/s VR VDSS TJ 150C 6 Eon includes diode reverse recovery. See figures 18, 20.
APT Reserves the right to change, without notice, the specifications and information contained herein.
0.30
, THERMAL IMPEDANCE (C/W)
0.25
0.9
0.20
0.7
0.15
0.5
Note:
PDM t1 t2 Duty Factor D = t1/t2 Peak TJ = PDM x ZJC + TC
3-2003
0.10
0.3
050-7015 Rev D
JC
Z
0.05 0.1 0 0.05 10-5 10-4 SINGLE PULSE
10-3 10-2 10-1 1.0 RECTANGULAR PULSE DURATION (SECONDS) FIGURE 1, MAXIMUM EFFECTIVE TRANSIENT THERMAL IMPEDANCE, JUNCTION-TO-CASE vs PULSE DURATION
10
Typical Performance Curves
60
RC MODEL
APT10045JLL
ID, DRAIN CURRENT (AMPERES)
Junction temp. ( "C) 0.0409 0.0246F
50 VGS =15 & 8V 40 6.5V 30 6V 20 5.5V 10 5V 0
7V
Power (Watts)
0.225
0.406F
0.00361 Case temperature
148F
FIGURE 2, TRANSIENT THERMAL IMPEDANCE MODEL 80
ID, DRAIN CURRENT (AMPERES) RDS(ON), DRAIN-TO-SOURCE ON RESISTANCE
VDS> ID (ON) x RDS (ON)MAX. 250SEC. PULSE TEST @ <0.5 % DUTY CYCLE
0 5 10 15 20 25 30 VDS, DRAIN-TO-SOURCE VOLTAGE (VOLTS) FIGURE 3, LOW VOLTAGE OUTPUT CHARACTERISTICS 1.40
V
GS
70 60 50 40 30 20 10 0
NORMALIZED TO = 10V @ 11.5A
1.30 1.20 VGS=10V
1.10
1.00
VGS=20V
TJ = +125C TJ = +25C
TJ = -55C
0.90 0.80
0 2 4 6 8 10 VGS, GATE-TO-SOURCE VOLTAGE (VOLTS) FIGURE 4, TRANSFER CHARACTERISTICS
0
10 20 30 40 50 ID, DRAIN CURRENT (AMPERES) FIGURE 5, RDS(ON) vs DRAIN CURRENT
25
BVDSS, DRAIN-TO-SOURCE BREAKDOWN VOLTAGE (NORMALIZED)
I
D
1.15
ID, DRAIN CURRENT (AMPERES)
20
1.10
1.05
15
1.00
10
0.95 0.90 0.85 -50
5
RDS(ON), DRAIN-TO-SOURCE ON RESISTANCE (NORMALIZED)
50 75 100 125 150 TC, CASE TEMPERATURE (C) FIGURE 6, MAXIMUM DRAIN CURRENT vs CASE TEMPERATURE 2.5
= 11.5A
0 25
-25 0 25 50 75 100 125 150 TJ, JUNCTION TEMPERATURE (C) FIGURE 7, BREAKDOWN VOLTAGE vs TEMPERATURE 1.2
VGS(TH), THRESHOLD VOLTAGE (NORMALIZED)
V
GS
= 10V
2.0
1.1
1.0 0.9 0.8
1.5
1.0
0.5
0.7 0.6 -50
050-7015 Rev D
0.0 -50
-25 0 25 50 75 100 125 150 TJ, JUNCTION TEMPERATURE (C) FIGURE 8, ON-RESISTANCE vs. TEMPERATURE
-25 0 25 50 75 100 125 150 TC, CASE TEMPERATURE (C) FIGURE 9, THRESHOLD VOLTAGE vs TEMPERATURE
3-2003
Typical Performance Curves
83
ID, DRAIN CURRENT (AMPERES)
APT10045JLL
20,000 10,000 Ciss
C, CAPACITANCE (pF)
50
OPERATION HERE LIMITED BY RDS (ON)
100S
1,000
10
Coss
1mS
100
Crss
TC =+25C TJ =+150C SINGLE PULSE 1 10 100 1000 VDS, DRAIN-TO-SOURCE VOLTAGE (VOLTS) FIGURE 10, MAXIMUM SAFE OPERATING AREA 1
10mS 10 0 10 20 30 40 50 VDS, DRAIN-TO-SOURCE VOLTAGE (VOLTS) FIGURE 11, CAPACITANCE vs DRAIN-TO-SOURCE VOLTAGE 200 100
VGS, GATE-TO-SOURCE VOLTAGE (VOLTS)
16
I
D
= 23A
12
VDS=200V VDS=500V
IDR, REVERSE DRAIN CURRENT (AMPERES)
TJ =+150C TJ =+25C 10
8
VDS=800V
4
50 100 150 200 250 Qg, TOTAL GATE CHARGE (nC) FIGURE 12, GATE CHARGES vs GATE-TO-SOURCE VOLTAGE 160 140 120 td(off)
0 0
1 0.3 0.5 0.7 0.9 1.1 1.3 1.5 VSD, SOURCE-TO-DRAIN VOLTAGE (VOLTS) FIGURE 13, SOURCE-DRAIN DIODE FORWARD VOLTAGE 60
V
DD G
= 670V
R
= 5
50 40
tr and tf (ns)
T = 125C
J
L = 100H V
DD G
tf
td(on) and td(off) (ns)
= 670V
100 80 60 40 20 0 0
R
= 5
T = 125C
J
L = 100H
30
20
tr
td(on) 20 30 40 ID (A) FIGURE 14, DELAY TIMES vs CURRENT
V
DD G
10 0
10
20 30 40 ID (A) FIGURE 15, RISE AND FALL TIMES vs CURRENT 4000
0
10
2000
= 670V R = 5
T = 125C
J
Eon
SWITCHING ENERGY (J)
3500 3000 2500 2000 1500 1000 500 0 0 5
V I
DD
SWITCHING ENERGY (J)
1500
L = 100H EON includes diode reverse recovery.
Eoff
Eon
1000
= 670V
3-2003
500
D J
= 23A
T = 125C L = 100H E ON includes diode reverse recovery.
050-7015 Rev D
Eoff 0 20 25 30 35 40 ID (A) FIGURE 16, SWITCHING ENERGY vs CURRENT 0 5 10 15
10 15 20 25 30 35 40 45 50 RG, GATE RESISTANCE (Ohms) FIGURE 17, SWITCHING ENERGY VS. GATE RESISTANCE
APT10045JLL
Gate Voltage
10 % td(on) tr
Drain Current
90%
T = 125 C J
Gate Voltage
T = 125 C J
t
d(off)
Drain Voltage
5%
90% 10 %
5%
Drain Voltage
90% t f
Switching Energy
10% 0
Drain Current
Switching Energy
Figure 18, Turn-on Switching Waveforms and Definitions
Figure 19, Turn-off Switching Waveforms and Definitions
APT15DF120B
V DD
IC
V CE
G D.U.T.
Figure 20, Inductive Switching Test Circuit
SOT-227 (ISOTOP(R)) Package Outline
31.5 (1.240) 31.7 (1.248) 7.8 (.307) 8.2 (.322) W=4.1 (.161) W=4.3 (.169) H=4.8 (.187) H=4.9 (.193) (4 places) 11.8 (.463) 12.2 (.480) 8.9 (.350) 9.6 (.378) Hex Nut M4 (4 places)
r = 4.0 (.157) (2 places)
4.0 (.157) 4.2 (.165) (2 places)
25.2 (0.992) 0.75 (.030) 12.6 (.496) 25.4 (1.000) 0.85 (.033) 12.8 (.504)
14.9 (.587) 15.1 (.594) 30.1 (1.185) 30.3 (1.193) 38.0 (1.496) 38.2 (1.504)
* Source
Drain
* Source terminals are shorted internally. Current handling capability is equal for either Source terminal.
* Source Dimensions in Millimeters and (Inches)
APT's products are covered by one or more of U.S.patents 4,895,810 5,045,903 5,089,434 5,182,234 5,019,522
Gate
5,262,336 6,503,786 5,256,583 4,748,103 5,283,202 5,231,474 5,434,095 5,528,058 and foreign patents. US and Foreign patents pending. All Rights Reserved.
050-7015 Rev D
3-2003
3.3 (.129) 3.6 (.143)
1.95 (.077) 2.14 (.084)

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