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TYPICAL PERFORMANCE CURVES (R)
APT100GT60JR 600V
APT100GT60JR
Thunderbolt IGBT(R)
The Thunderblot IGBT(R) is a new generation of high voltage power IGBTs. Using Non- Punch Through Technology, the Thunderblot IGBT(R) offers superior ruggedness and ultrafast switching speed. * Low Forward Voltage Drop * Low Tail Current * RBSOA and SCSOA Rated * High Freq. Switching to 80KHz * Ultra Low Leakage Current
E G C
E
S
OT
22
7
ISOTOP (R)
"UL Recognized"
file # E145592
C G E
MAXIMUM RATINGS
Symbol VCES VGE I C1 I C2 I CM SSOA PD TJ,TSTG TL Parameter Collector-Emitter Voltage Gate-Emitter Voltage Continuous Collector Current @ TC = 25C Continuous Collector Current @ TC = 100C Pulsed Collector Current
1
All Ratings: TC = 25C unless otherwise specified.
APT100GT60JR UNIT Volts
600 30 148 80 300 300A @ 600V 500 -55 to 150 300
Amps
Switching Safe Operating Area @ TJ = 150C Total Power Dissipation Operating and Storage Junction Temperature Range Max. Lead Temp. for Soldering: 0.063" from Case for 10 Sec.
Watts C
STATIC ELECTRICAL CHARACTERISTICS
Symbol V(BR)CES VGE(TH) VCE(ON) Characteristic / Test Conditions Collector-Emitter Breakdown Voltage (VGE = 0V, I C = 4mA) Gate Threshold Voltage (VCE = VGE, I C = 1.5mA, Tj = 25C) MIN TYP MAX Units
600 3 1.7 4 2.1 2.5 25
2
5 2.5
Collector-Emitter On Voltage (VGE = 15V, I C = 100A, Tj = 25C) Collector-Emitter On Voltage (VGE = 15V, I C = 100A, Tj = 125C) Collector Cut-off Current (VCE = 600V, VGE = 0V, Tj = 25C)
2
Volts
CAUTION: These Devices are Sensitive to Electrostatic Discharge. Proper Handling Procedures Should Be Followed.
APT Website - http://www.advancedpower.com
052-6274
Rev A
I GES
Gate-Emitter Leakage Current (VGE = 30V)
300
nA
4-2006
I CES
Collector Cut-off Current (VCE = 600V, VGE = 0V, Tj = 125C)
A
TBD
DYNAMIC CHARACTERISTICS
Symbol Cies Coes Cres VGEP Qg Qge Qgc SSOA td(on) td(off) tf Eon1 Eon2 Eoff td(on) tr td(off) tf Eon1 Eon2 Eoff tr Characteristic Input Capacitance Output Capacitance Reverse Transfer Capacitance Gate-to-Emitter Plateau Voltage Total Gate Charge
3
APT100GT60JR
Test Conditions Capacitance VGE = 0V, VCE = 25V f = 1 MHz Gate Charge VCE = 300V I C = 100A TJ = 150C, R G = 4.3, VGE = 15V, L = 100H,VCE = 600V Inductive Switching (25C) VCC = 400V VGE = 15V RG = 4.3 I C = 100A VGE = 15V MIN TYP MAX UNIT pF V nC
5150 475 295 8.0 460 40 210 300 40 75 320 100 3250 3525 3125 40 75 350 100 3275 4650 3750 J
ns A
Gate-Emitter Charge Gate-Collector ("Miller ") Charge Switching Safe Operating Area Turn-on Delay Time Current Rise Time Turn-off Delay Time Current Fall Time Turn-on Switching Energy Turn-off Switching Energy Turn-on Delay Time Current Rise Time Turn-off Delay Time Current Fall Time Turn-on Switching Energy Turn-off Switching Energy
44 55 4 5
ns
Turn-on Switching Energy (Diode)
6
TJ = +25C Inductive Switching (125C) VCC = 400V VGE = 15V RG = 4.3 I C = 100A
J
Turn-on Switching Energy (Diode)
66
TJ = +125C
THERMAL AND MECHANICAL CHARACTERISTICS
Symbol RJC RJC WT VIsolation Characteristic Junction to Case (IGBT) Junction to Case (DIODE) Package Weight RMS Voltage (50-60hHz Sinusoidal Wavefomr Ffrom Terminals to Mounting Base for 1 Min.) 2500 MIN TYP MAX UNIT C/W gm Volts
.25 N/A 29.2
1 Repetitive Rating: Pulse width limited by maximum junction temperature. 2 For Combi devices, Ices includes both IGBT and FRED leakages 3 See MIL-STD-750 Method 3471. 4 Eon1 is the clamped inductive turn-on energy of the IGBT only, without the effect of a commutating diode reverse recovery current adding to the IGBT turn-on loss. Tested in inductive switching test circuit shown in figure 21, but with a Silicon Carbide diode. 5 Eon2 is the clamped inductive turn-on energy that includes a commutating diode reverse recovery current in the IGBT turn-on switching loss. (See Figures 21, 22.)
4-2006
6 Eoff is the clamped inductive turn-off energy measured in accordance with JEDEC standard JESD24-1. (See Figures 21, 23.)
APT Reserves the right to change, without notice, the specifications and information contained herein.
052-6274
Rev A
TYPICAL PERFORMANCE CURVES
200 180 IC, COLLECTOR CURRENT (A) 160 140 120 100 80 60 40 20 0
V
GE
= 15V
300 250 200 150 100 50 0
APT100GT60JR
12, 13, &15V 10V 9V
TC = 25C
TC = 125C
IC, COLLECTOR CURRENT (A)
8V
TC = -55C
7V
6V
200 180 IC, COLLECTOR CURRENT (A) 160 140 120 100
FIGURE 1, Output Characteristics(VGE = 15V)
VGE, GATE-TO-EMITTER VOLTAGE (V)
250s PULSE TEST<0.5 % DUTY CYCLE
0 0.5 1 1.5 2 2.5 3 3.5 4 VCE, COLLECTER-TO-EMITTER VOLTAGE (V)
16 14 12 10
FIGURE 2, Output Characteristics (TJ = 125C)
I = 100A C T = 25C
J
0 5 10 15 20 25 30 VCE, COLLECTER-TO-EMITTER VOLTAGE (V)
TJ = -55C
VCE = 120V VCE = 300V VCE = 480V
8 6 4 2 0
80 60 40 20 0
TJ = 25C TJ = 125C
0
2 4 6 8 10 VGE, GATE-TO-EMITTER VOLTAGE (V) FIGURE 3, Transfer Characteristics IC = 200A
TJ = 25C. 250s PULSE TEST <0.5 % DUTY CYCLE
0
100
200 300 400 GATE CHARGE (nC)
500
FIGURE 4, Gate Charge
VCE, COLLECTOR-TO-EMITTER VOLTAGE (V) 4 3.5 3 2.5 2 1.5 1 0.5 0
VGE = 15V. 250s PULSE TEST <0.5 % DUTY CYCLE
VCE, COLLECTOR-TO-EMITTER VOLTAGE (V)
4.5 4.0 3.5 3.0 2.5 2.0 1.5 1.0 0.5
IC = 200A
IC = 100A
IC = 100A
IC = 50A
IC = 50A
8 10 12 14 16 VGE, GATE-TO-EMITTER VOLTAGE (V) FIGURE 5, On State Voltage vs Gate-to- Emitter Voltage
1.15
0
6
25 50 75 100 125 150 TJ, Junction Temperature (C) FIGURE 6, On State Voltage vs Junction Temperature
200
0
IC, DC COLLECTOR CURRENT(A)
VGS(TH), THRESHOLD VOLTAGE
1.10 1.05 1.00 0.95 0.90 0.85 0.80 0.75 0.70 -50 -25 0 25 50 75 100 125 150 TJ, JUNCTION TEMPERATURE (C) FIGURE 7, Threshold Voltage vs. Junction Temperature
180 160 140 120 100 80 60 40 20 0 -50 -25 0 25 50 75 100 125 150 TC, CASE TEMPERATURE (C) FIGURE 8, DC Collector Current vs Case Temperature 4-2006 052-6274 Rev A
(NORMALIZED)
35 td(ON), TURN-ON DELAY TIME (ns) 30 25 20 15 10 5 TJ = 25C, or 125C
0 25 50 75 100 125 150 175 200 225 ICE, COLLECTOR TO EMITTER CURRENT (A) FIGURE 9, Turn-On Delay Time vs Collector Current
VCE = 400V RG = 4.3 L = 100H
450
APT100GT60JR
VGE = 15V
td (OFF), TURN-OFF DELAY TIME (ns)
400 350 300 250 200 150 100 50 0
VCE = 400V RG = 4.3 L = 100H VGE =15V,TJ=25C
VGE =15V,TJ=125C
0
0 25 50 75 100 125 150 175 200 225 ICE, COLLECTOR TO EMITTER CURRENT (A) FIGURE 10, Turn-Off Delay Time vs Collector Current 200 180 160
RG = 4.3, L = 100H, VCE = 400V
250
RG = 4.3, L = 100H, VCE = 400V
200 tf, FALL TIME (ns) tr, RISE TIME (ns)
140 120 100 80 60 40 20
TJ = 125C, VGE = 15V
150
100
50
TJ = 25C, VGE = 15V
TJ = 25 or 125C,VGE = 15V
0 25 50 75 100 125 150 175 200 225 ICE, COLLECTOR TO EMITTER CURRENT (A) FIGURE 11, Current Rise Time vs Collector Current
0
0 25 50 75 100 125 150 175 200 225 ICE, COLLECTOR TO EMITTER CURRENT (A) FIGURE 12, Current Fall Time vs Collector Current 12000
0
16000 EON2, TURN ON ENERGY LOSS (J) 14000 12000 10000 8000 6000 4000 2000 0
EOFF, TURN OFF ENERGY LOSS (J)
V = 400V CE V = +15V GE R = 4.3
G
10000 8000 6000 4000 2000 0
V = 400V CE V = +15V GE R = 4.3
G
TJ = 125C
TJ = 125C
TJ = 25C
TJ = 25C
0 25 50 75 100 125 150 175 200 225 ICE, COLLECTOR TO EMITTER CURRENT (A) FIGURE 13, Turn-On Energy Loss vs Collector Current
0 25 50 70 100 125 150 175 200 225 ICE, COLLECTOR TO EMITTER CURRENT (A) FIGURE 14, Turn Off Energy Loss vs Collector Current 16000
= 400V V CE = +15V V GE R = 4.3
G
35000 SWITCHING ENERGY LOSSES (J) 30000 25000 20000 15000 10000 5000 0
SWITCHING ENERGY LOSSES (J)
= 400V V CE = +15V V GE T = 125C
J
Eon2,200A
Eon2,200A
14000 12000 10000 8000 6000
Eoff,200A
4-2006
Eoff,200A
Eon2,100A Eoff,100A Eoff,50A Eon2,50A
4000 Eon2,100A 2000 Eoff,50A 0
Eon2,50A Eoff,100A
Rev A
052-6274
50 40 30 20 10 RG, GATE RESISTANCE (OHMS) FIGURE 15, Switching Energy Losses vs. Gate Resistance 0
125 100 75 50 25 TJ, JUNCTION TEMPERATURE (C) FIGURE 16, Switching Energy Losses vs Junction Temperature 0
TYPICAL PERFORMANCE CURVES
10,000 5,000 C, CAPACITANCE ( F) Cies IC, COLLECTOR CURRENT (A)
350 300 250 200 150 100 50
APT100GT60JR
P
1,000 500 C0es
Cres 0 10 20 30 40 50 VCE, COLLECTOR-TO-EMITTER VOLTAGE (VOLTS) Figure 17, Capacitance vs Collector-To-Emitter Voltage 100
0 100 200 300 400 500 600 700 VCE, COLLECTOR TO EMITTER VOLTAGE Figure 18,Minimim Switching Safe Operating Area
0
0.30 0.25 0.20 0.15 0.10 0.05 0
ZJC, THERMAL IMPEDANCE (C/W)
0.9 0.7 0.5 0.3 0.1 0.05 10-5 10-4
Note:
PDM
t1 t2
SINGLE PULSE
Duty Factor D = 1/t2 Peak TJ = PDM x ZJC + TC
t
10-3 10-2 10-1 1.0 RECTANGULAR PULSE DURATION (SECONDS) Figure 19a, Maximum Effective Transient Thermal Impedance, Junction-To-Case vs Pulse Duration
10
100 FMAX, OPERATING FREQUENCY (kHz) 50
T = 75C
C
TJ (C)
0.0587 Dissipated Power (Watts) 0.0120 0.420 4.48 0.132
TC (C)
0.0587
10 5
T = 125C J D = 50 % V = 400V CE R = 4.3
G
ZEXT
T = 100C
C
= min (fmax, fmax2) 0.05 fmax1 = td(on) + tr + td(off) + tf
max
F
fmax2 = Pdiss =
ZEXT are the external thermal impedances: Case to sink, sink to ambient, etc. Set to zero when modeling only the case to junction.
Pdiss - Pcond Eon2 + Eoff TJ - TC RJC
FIGURE 19b, TRANSIENT THERMAL IMPEDANCE MODEL
30 40 50 60 70 80 90 100 IC, COLLECTOR CURRENT (A) Figure 20, Operating Frequency vs Collector Current
1
10 20
052-6274
Rev A
4-2006
APT100GT60JR
APT100DQ60
10% td(on)
Gate Voltage TJ = 125C tr 90% 5% CollectorVoltage Collector Current
V CC
IC
V CE
5%
10%
A D.U.T.
Switching Energy
Figure 21, Inductive Switching Test Circuit Figure 22, Turn-on Switching Waveforms and Definitions
90%
Gate Voltage
TJ = 125C
td(off) 90% tf
CollectorVoltage
10%
0
Collector Current
Switching Energy
Figure 23, Turn-off Switching Waveforms and Definitions
SOT-227 (ISOTOP(R)) Package Outline
31.5 (1.240) 31.7 (1.248) 7.8 (.307) 8.2 (.322)
W=4.1 (.161) W=4.3 (.169) H=4.8 (.187) H=4.9 (.193) (4 places)
11.8 (.463) 12.2 (.480)
8.9 (.350) 9.6 (.378) Hex Nut M4 (4 places)
r = 4.0 (.157) (2 places)
4.0 (.157) 4.2 (.165) (2 places)
25.2 (0.992) 0.75 (.030) 12.6 (.496) 25.4 (1.000) 0.85 (.033) 12.8 (.504)
3.3 (.129) 3.6 (.143)
1.95 (.077) 2.14 (.084)
14.9 (.587) 15.1 (.594)
* Emitter
Collector
* Emitter terminals are shorted internally. Current handling capability is equal for either Source terminal.
4-2006
30.1 (1.185) 30.3 (1.193) 38.0 (1.496) 38.2 (1.504)
Rev A
* Emitter Dimensions in Millimeters and (Inches)
ISOTOP(R) is a Registered Trademark of SGS Thomson.
Gate
052-6274
,019,522 ,182,234 5 ,089,434 5 ,045,903 5 APT's products are covered by one or more of U.S.patents 4,895,810 5
ll ,528,058 and foreign patents. US and Foreign patents pending. A Rights Reserved. ,434,095 5 ,231,474 5 ,283,202 5 ,748,103 5 ,256,583 4 ,503,786 5 5,262,336 6

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