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APT11N80BC3
800V 11A 0.45
Super Junction MOSFET
C OLMOS O
Power Semiconductors
TO-247
* Ultra low RDS(ON) * Low Miller Capacitance * Ultra Low Gate Charge, Qg * Avalanche Energy Rated * TO-247 Package
MAXIMUM RATINGS
Symbol VDSS ID IDM VGS VGSM PD TJ,TSTG TL
dv/ dt
D G S
All Ratings: TC = 25C unless otherwise specified.
APT11N80BC3 UNIT Volts Amps
Parameter Drain-Source Voltage Continuous Drain Current @ TC = 25C Pulsed Drain Current
1
800 11 33 20 30 156 1.25 -55 to 150 260 50 11 0.2
4
Gate-Source Voltage Continuous Gate-Source Voltage Transient Total Power Dissipation @ TC = 25C Linear Derating Factor Operating and Storage Junction Temperature Range Lead Temperature: 0.063" from Case for 10 Sec. Drain-Source Voltage slope (VDS = 640V, ID = 11A, TJ = 125C) Repetitive Avalanche Current Repetitive Avalanche Energy
7 7
Volts Watts W/C C V/ns Amps mJ
IAR EAR EAS
Single Pulse Avalanche Energy
470
STATIC ELECTRICAL CHARACTERISTICS
Symbol BVDSS RDS(on) IDSS IGSS VGS(th) Characteristic / Test Conditions Drain-Source Breakdown Voltage (VGS = 0V, ID = 250A) Drain-Source On-State Resistance
2
MIN
TYP
MAX
UNIT Volts
800 0.39 0.5 0.45 20 200 100 2.1 3 3.9
(VGS = 10V, ID = 7.1A)
Ohms A nA Volts
Zero Gate Voltage Drain Current (VDS = VDSS, VGS = 0V) Zero Gate Voltage Drain Current (VDS = VDSS, VGS = 0V, TJ = 150C) Gate-Source Leakage Current (VGS = 20V, VDS = 0V) Gate Threshold Voltage (VDS = VGS, ID = 680A)
CAUTION: These Devices are Sensitive to Electrostatic Discharge. Proper Handling Procedures Should Be Followed.
APT Website - http://www.advancedpower.com
"COOLMOSTM comprise a new family of transistors developed by Infineon Technologies AG. "COOLMOS" is a trademark of Infineon Technologies AG"
050-7136 Rev B
4-2004
DYNAMIC CHARACTERISTICS
Symbol Ciss Coss Crss Qg Qgs Qgd td(on) tr td(off) tf Eon Eoff Eon Eoff Characteristic Input Capacitance Output Capacitance Reverse Transfer Capacitance Total Gate Charge
3
APT11N80BC3
Test Conditions
VGS = 0V VDS = 25V f = 1 MHz VGS = 10V VDD = 400V ID = 11A @ 25C RESISTIVE SWITCHING VGS = 10V VDD = 400V ID = 11A @ 25C RG = 7.5 6 INDUCTIVE SWITCHING @ 25C VDD = 533V, VGS = 15V ID = 11A, RG = 5 6 INDUCTIVE SWITCHING @ 125C VDD = 533V VGS = 15V ID = 11A, RG = 5
MIN
TYP
MAX
UNIT
1585 770 18 60 8 30 25 15 70 7 165 50 305 65
MIN TYP MAX UNIT Amps Volts ns C V/ns nC pF
Gate-Source Charge Gate-Drain ("Miller ") Charge Turn-on Delay Time Rise Time Turn-off Delay Time Fall Time Turn-on Switching Energy Turn-off Switching Energy Turn-on Switching Energy Turn-off Switching Energy
80 10
ns
J
SOURCE-DRAIN DIODE RATINGS AND CHARACTERISTICS
Symbol IS ISM VSD t rr Q rr
dv/ dt
Characteristic / Test Conditions Continuous Source Current (Body Diode) Pulsed Source Current Diode Forward Voltage
1 2
11 33 1 550 10 6
MIN TYP MAX
(Body Diode) (VGS = 0V, IS = -11A)
1.2
Reverse Recovery Time (IS = 11A, dl S/dt = -100A/s, VR = 640V) Reverse Recovery Charge (IS = 11A, dl S/dt = -100A/s, VR = 640V) Peak Diode Recovery
dv/ dt 5
THERMAL CHARACTERISTICS
Symbol RJC RJA Characteristic Junction to Case Junction to Ambient UNIT C/W
0.80 62
1 Repetitve avalanche causes additional power losses that can be calculated as PAV=EAR*f 2 Pulse Test: Pulse width < 380 s, Duty Cycle < 2% 3 See MIL-STD-750 Method 3471
APT Reserves the right to change, without notice, the specifications and information contained herein. 0.90
, THERMAL IMPEDANCE (C/W)
4 Starting Tj = +25C, L = 194mH, RG = 25, Peak IL = 2.2A 5 dv/dt numbers reflect the limitations of the test circuit rather than the device itself. IS -ID 11A di/dt 700A/s VR VDSS TJ 150C 6 Eon includes diode reverse recovery. See figures 18, 20. 7 Repetitve avalanche causes additional power losses that can be calculated as PAV=EAR*f
0.80 0.70 0.60 0.50 0.40 0.30 0.20 0.10 0 10-5 0.1 0.05 10-4 SINGLE PULSE 0.5 Note:
PDM t1 t2 Duty Factor D = t1/t2 Peak TJ = PDM x ZJC + TC
0.9
0.7
4-2004
0.3
050-7136 Rev B
Z
JC
10-3 10-2 10-1 RECTANGULAR PULSE DURATION (SECONDS) FIGURE 1, MAXIMUM EFFECTIVE TRANSIENT THERMAL IMPEDANCE, JUNCTION-TO-CASE vs PULSE DURATION
1.0
Typical Performance Curves
ID, DRAIN CURRENT (AMPERES)
30 25 20 15 10 5 0 VGS =15 & 10V
APT11N80BC3
RC MODEL Junction temp. (C) 0.345 Power (watts) 0.455 Case temperature 0.101 0.00375
6.5V 6V 5.5V 5V 4.5V 4V
FIGURE 2, TRANSIENT THERMAL IMPEDANCE MODEL
RDS(ON), DRAIN-TO-SOURCE ON RESISTANCE
45 40
ID, DRAIN CURRENT (AMPERES)
VDS> ID (ON) x RDS (ON)MAX. 250SEC. PULSE TEST @ <0.5 % DUTY CYCLE
0 5 10 15 20 VDS, DRAIN-TO-SOURCE VOLTAGE (VOLTS) FIGURE 3, LOW VOLTAGE OUTPUT CHARACTERISTICS 1.40
NORMALIZED TO = 10V @ 5.5A V
GS
1.30 1.20 1.10 1.00 VGS=20V 0.90 0.80
35 30 25 20 15 10 5 0 012 34 567 8 9 10 VGS, GATE-TO-SOURCE VOLTAGE (VOLTS) FIGURE 4, TRANSFER CHARACTERISTICS 12 TJ = -55C TJ = +25C TJ = +125C
VGS=10V
0
4 8 12 16 ID, DRAIN CURRENT (AMPERES) FIGURE 5, RDS(ON) vs DRAIN CURRENT
20
1.15
BVDSS, DRAIN-TO-SOURCE BREAKDOWN VOLTAGE (NORMALIZED)
ID, DRAIN CURRENT (AMPERES)
10 8 6 4 2 0 25
1.10 1.05 1.00 0.95 0.90 0.85 0.80 -50 -25 0 25 50 75 100 125 150
50
75
100
125
150
RDS(ON), DRAIN-TO-SOURCE ON RESISTANCE (NORMALIZED)
TC, CASE TEMPERATURE (C) FIGURE 6, MAXIMUM DRAIN CURRENT vs CASE TEMPERATURE 3.0
I
D
= 5.5A
TJ, JUNCTION TEMPERATURE (C) FIGURE 7, BREAKDOWN VOLTAGE vs TEMPERATURE 1.2 1.1 1.0 0.9 0.8 0.7 0.6 -50
V
2.0 1.5 1.0 0.5 0 -50
VGS(TH), THRESHOLD VOLTAGE (NORMALIZED)
2.5
GS
= 10V
-25
0
25
50
75
100 125 150
-25
0
25
50
75
100 125 150
TJ, JUNCTION TEMPERATURE (C) FIGURE 8, ON-RESISTANCE vs. TEMPERATURE
TC, CASE TEMPERATURE (C) FIGURE 9, THRESHOLD VOLTAGE vs TEMPERATURE
050-7136 Rev B
4-2004
Typical Performance Curves
33
OPERATION HERE LIMITED BY RDS (ON)
10,000
APT11N80BC3
Ciss
ID, DRAIN CURRENT (AMPERES)
10 5 100S
C, CAPACITANCE (pF)
1,000
Coss 100
1
1mS 10mS
10 Crss 1
VGS, GATE-TO-SOURCE VOLTAGE (VOLTS)
I
D
= 11A
12 VDS= 160V 8 VDS= 400V
IDR, REVERSE DRAIN CURRENT (AMPERES)
1 10 100 800 VDS, DRAIN-TO-SOURCE VOLTAGE (VOLTS) FIGURE 10, MAXIMUM SAFE OPERATING AREA 16
.1
TC =+25C TJ =+150C SINGLE PULSE
0 10 20 30 40 50 VDS, DRAIN-TO-SOURCE VOLTAGE (VOLTS) FIGURE 11, CAPACITANCE vs DRAIN-TO-SOURCE VOLTAGE 100
TJ =+150C 10 TJ =+25C
VDS= 640V
4
20 40 60 80 100 Qg, TOTAL GATE CHARGE (nC) FIGURE 12, GATE CHARGES vs GATE-TO-SOURCE VOLTAGE 70 60 50 40 30 20 10 0 td(on) td(off)
0 0
0.3 0.5 0.7 0.9 1.1 1.3 1.5 VSD, SOURCE-TO-DRAIN VOLTAGE (VOLTS) FIGURE 13, SOURCE-DRAIN DIODE FORWARD VOLTAGE 40 tf 30
1
td(on) and td(off) (ns)
V
DD G
= 533V
R
= 5
tr and tf (ns)
V
T = 125C
J
DD G
= 533V
L = 100H
20
R
= 5
T = 125C
J
L = 100H
10
tr
5
14 17 20 ID (A) FIGURE 14, DELAY TIMES vs CURRENT
8
11
14 17 20 ID (A) FIGURE 15, RISE AND FALL TIMES vs CURRENT 500
0
5
8
11
500 Eon
V
DD G
= 533V
R
= 5
300
SWITCHING ENERGY (J)
SWITCHING ENERGY (J)
400
400
Eon
T = 125C
J
300
L = 100H EON includes
200
diode reverse recovery.
200 Eoff 100
V I
4-2004
DD
= 533V
D J
= 11A
100
T = 125C L = 100H E ON includes diode reverse recovery.
Eoff
050-7136 Rev B
14 17 20 ID (A) FIGURE 16, SWITCHING ENERGY vs CURRENT
0
5
8
11
10 15 20 25 30 35 40 45 50 RG, GATE RESISTANCE (Ohms) FIGURE 17, SWITCHING ENERGY VS. GATE RESISTANCE
0
0
5
Typical Performance Curves
APT11N80BC3
10% td(on) tr 90%
Gate Voltage
TJ = 125 C
90%
Gate Voltage
TJ = 125 C
td(off)
Collector Current
tf
Collector Voltage
90%
5%
10%
5%
Collector Voltage
0 10% Switching Energy Collector Current
Switching Energy
Figure 18, Turn-on Switching Waveforms and Definitions
Figure 19, Turn-off Switching Waveforms and Definitions
APT15DF60B
V DD
IC
V CE
G D.U.T.
Figure 20, Inductive Switching Test Circuit
TO-247 Package Outline
4.69 (.185) 5.31 (.209) 1.49 (.059) 2.49 (.098) 6.15 (.242) BSC 15.49 (.610) 16.26 (.640) 5.38 (.212) 6.20 (.244)
Drain
20.80 (.819) 21.46 (.845) 3.50 (.138) 3.81 (.150)
4.50 (.177) Max. 0.40 (.016) 0.79 (.031)
2.87 (.113) 3.12 (.123) 1.65 (.065) 2.13 (.084)
19.81 (.780) 20.32 (.800)
2.21 (.087) 2.59 (.102)
5.45 (.215) BSC 2-Plcs.
Dimensions in Millimeters and (Inches)
APT's products are covered by one or more of U.S.patents 4,895,810 5,045,903 5,089,434 5,182,234 5,019,522 5,262,336 6,503,786 5,256,583 4,748,103 5,283,202 5,231,474 5,434,095 5,528,058 and foreign patents. US and Foreign patents pending. All Rights Reserved.
050-7136 Rev B
4-2004
1.01 (.040) 1.40 (.055)
Gate Drain Source

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