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APT30M17JFLL
300V 135A
0.017
S D
POWER MOS 7
(R)
R
FREDFET
G
S
Power MOS 7 is a new generation of low loss, high voltage, N-Channel enhancement mode power MOSFETS. Both conduction and switching (R) losses are addressed with Power MOS 7 by significantly lowering RDS(ON) (R) and Qg. Power MOS 7 combines lower conduction and switching losses along with exceptionally fast switching speeds inherent with APT's patented metal gate structure. * Lower Input Capacitance * Lower Miller Capacitance * Lower Gate Charge, Qg
MAXIMUM RATINGS
Symbol VDSS ID IDM VGS VGSM PD TJ,TSTG TL IAR EAR EAS Parameter Drain-Source Voltage Continuous Drain Current @ TC = 25C Pulsed Drain Current
1
SO
2 T-
27
"UL Recognized"
ISOTOP (R)
* Increased Power Dissipation * Easier To Drive * Popular SOT-227 Package *FAST RECOVERY BODY DIODE
APT30M17JFLL
D G S
All Ratings: TC = 25C unless otherwise specified.
UNIT Volts Amps
300 135 540 30 40 694 5.56 -55 to 150 300 135 50
4
Gate-Source Voltage Continuous Gate-Source Voltage Transient Total Power Dissipation @ TC = 25C Linear Derating Factor Operating and Storage Junction Temperature Range Lead Temperature: 0.063" from Case for 10 Sec. Avalanche Current
1
Volts Watts W/C C Amps mJ
(Repetitive and Non-Repetitive)
1
Repetitive Avalanche Energy
Single Pulse Avalanche Energy
3600
STATIC ELECTRICAL CHARACTERISTICS
Symbol BVDSS RDS(on) IDSS IGSS VGS(th) Characteristic / Test Conditions Drain-Source Breakdown Voltage (VGS = 0V, ID = 250A) Drain-Source On-State Resistance
2
MIN
TYP
MAX
UNIT Volts
300 0.017 250 1000 100 3 5
(VGS = 10V, ID = 67.5A)
Ohms A nA Volts
4-2004 050-7159 Rev A
Zero Gate Voltage Drain Current (VDS = 300V, VGS = 0V) Zero Gate Voltage Drain Current (VDS = 240V, VGS = 0V, TC = 125C) Gate-Source Leakage Current (VGS = 30V, VDS = 0V) Gate Threshold Voltage (VDS = VGS, ID = 5mA)
CAUTION: These Devices are Sensitive to Electrostatic Discharge. Proper Handling Procedures Should Be Followed.
APT Website - http://www.advancedpower.com
DYNAMIC CHARACTERISTICS
Symbol Ciss Coss Crss Qg Qgs Qgd td(on) tr td(off) tf Eon Eoff Eon Eoff Symbol IS ISM VSD
dv/ dt
APT30M17JFLL
Test Conditions
VGS = 0V VDS = 25V f = 1 MHz VGS = 10V VDD =150V ID = 135A @ 25C RESISTIVE SWITCHING VGS = 15V VDD = 150V ID = 135A @ 25C 6 INDUCTIVE SWITCHING @ 25C VDD = 200V, VGS = 15V INDUCTIVE SWITCHING @ 125C VDD = 200V, VGS = 15V ID = 100A, RG = 5 ID = 100A, RG = 5 RG = 0.6
Characteristic Input Capacitance Output Capacitance Reverse Transfer Capacitance Total Gate Charge
3
MIN
TYP
MAX
UNIT pF
14100 3285 185 230 85 105 19 31 44 13 1120 1250 1325 1460
MIN TYP MAX
Gate-Source Charge Gate-Drain ("Miller") Charge Turn-on Delay Time Rise Time Turn-off Delay Time Fall Time Turn-on Switching Energy Turn-off Switching Energy Turn-on Switching Energy Turn-off Switching Energy Characteristic / Test Conditions Continuous Source Current (Body Diode) Pulsed Source Current Diode Forward Voltage Peak Diode Recovery
1 2 dt 6
nC
ns
J
SOURCE-DRAIN DIODE RATINGS AND CHARACTERISTICS
UNIT Amps Volts V/ns ns C Amps
135 540 1.3 8
Tj = 25C Tj = 125C Tj = 25C Tj = 125C Tj = 25C Tj = 125C MIN
(Body Diode) (VGS = 0V, IS = -135A)
5
dv/
t rr Q rr IRRM
Reverse Recovery Time (IS = -135A, di/dt = 100A/s) Reverse Recovery Charge (IS = -135A, di/dt = 100A/s) Peak Recovery Current (IS = -135A, di/dt = 100A/s) Characteristic Junction to Case Junction to Ambient
200 250 1.5 4.4 15 25
TYP
300 525
THERMAL CHARACTERISTICS
Symbol RJC RJA MAX UNIT C/W
0.18 40
1 Repetitive Rating: Pulse width limited by maximum junction temperature 2 Pulse Test: Pulse width < 380 s, Duty Cycle < 2% 3 See MIL-STD-750 Method 3471
0.20
, THERMAL IMPEDANCE (C/W)
4 Starting Tj = +25C, L = .40mH, RG = 25, Peak IL = 135A 5 dv/dt numbers reflect the limitations of the test circuit rather than the device itself. IS ID-135A di/dt 700A/s VR 300 TJ 150C 6 Eon includes diode reverse recovery. See figures 18, 20.
APT Reserves the right to change, without notice, the specifications and inforation contained herein.
0.16
0.9
0.7 0.12 0.5 0.08 0.3 0.04 0.1 0 0.05 10-5 10-4 SINGLE PULSE Note:
PDM t1 t2 Peak TJ = PDM x ZJC + TC Duty Factor D = t1/t2
4-2004
050-7159 Rev A
Z
JC
10-3 10-2 10-1 1.0 RECTANGULAR PULSE DURATION (SECONDS) FIGURE 1, MAXIMUM EFFECTIVE TRANSIENT THERMAL IMPEDANCE, JUNCTION-TO-CASE vs PULSE DURATION
10
Typical Performance Curves
Junction temp. (C) RC MODEL
350 VGS =15 & 10V
ID, DRAIN CURRENT (AMPERES)
APT30M17JFLL
300 250 200 150 100 6.5V 50 0 6V 5.5V 8V
0.0268
0.0456F
7.5V
Power (watts)
0.109
0.765F
7V
0.0426 Case temperature. (C)
23.5F
FIGURE 2, TRANSIENT THERMAL IMPEDANCE MODEL
RDS(ON), DRAIN-TO-SOURCE ON RESISTANCE
400 350 300 250 200 150 100 50 0
0 5 10 15 20 25 30 VDS, DRAIN-TO-SOURCE VOLTAGE (VOLTS) FIGURE 3, LOW VOLTAGE OUTPUT CHARACTERISTICS 1.40
V
GS
ID, DRAIN CURRENT (AMPERES)
VDS> ID (ON) x RDS (ON)MAX. 250 SEC. PULSE TEST @ <0.5 % DUTY CYCLE
NORMALIZED TO = 10V @ 67.5A
1.30 1.20 1.10 VGS=10V 1.00 VGS=20V 0.90 0.80
TJ = -55C TJ = +25C TJ = +125C
0 2 4 6 8 10 VGS, GATE-TO-SOURCE VOLTAGE (VOLTS) FIGURE 4, TRANSFER CHARACTERISTICS
0
140 120 100 80 60 40 20 0 25
BVDSS, DRAIN-TO-SOURCE BREAKDOWN VOLTAGE (NORMALIZED)
1.20 1.15 1.10 1.05 1.00 0.95 0.90
50 100 150 200 250 300 ID, DRAIN CURRENT (AMPERES) FIGURE 5, RDS(ON) vs DRAIN CURRENT
ID, DRAIN CURRENT (AMPERES)
RDS(ON), DRAIN-TO-SOURCE ON RESISTANCE (NORMALIZED)
50 75 100 125 150 TC, CASE TEMPERATURE (C) FIGURE 6, MAXIMUM DRAIN CURRENT vs CASE TEMPERATURE 2.5
I
D
-50 -25 0 25 50 75 100 125 150 TJ, JUNCTION TEMPERATURE (C) FIGURE 7, BREAKDOWN VOLTAGE vs TEMPERATURE 1.2 1.1 1.0 0.9 0.8 0.7 0.6 -50
= 67.5A
V
GS
= 10V
2.0
1.5
1.0
VGS(TH), THRESHOLD VOLTAGE (NORMALIZED)
0.5
0.0 -50
-25 0 25 50 75 100 125 150 TJ, JUNCTION TEMPERATURE (C) FIGURE 8, ON-RESISTANCE vs. TEMPERATURE
-25 0 25 50 75 100 125 150 TC, CASE TEMPERATURE (C) FIGURE 9, THRESHOLD VOLTAGE vs TEMPERATURE
050-7159 Rev A
4-2004
540
ID, DRAIN CURRENT (AMPERES)
OPERATION HERE LIMITED BY RDS (ON)
30,000
APT30M17JFLL
Ciss
10,000
C, CAPACITANCE (pF)
100S 100 50 1mS TC =+25C TJ =+150C SINGLE PULSE
Coss
1,000
Crss 10mS 0 10 20 30 40 50 VDS, DRAIN-TO-SOURCE VOLTAGE (VOLTS) FIGURE 11, CAPACITANCE vs DRAIN-TO-SOURCE VOLTAGE 400 100
10
1 10 100 300 VDS, DRAIN-TO-SOURCE VOLTAGE (VOLTS) FIGURE 10, MAXIMUM SAFE OPERATING AREA
I
D
= 135A
12
VDS= 60V
IDR, REVERSE DRAIN CURRENT (AMPERES)
VGS, GATE-TO-SOURCE VOLTAGE (VOLTS)
16
100
TJ =+150C TJ =+25C
VDS= 150V 8
VDS= 240V
10
4
50 100 150 200 Qg, TOTAL GATE CHARGE (nC) FIGURE 12, GATE CHARGES vs GATE-TO-SOURCE VOLTAGE 250
0 0
0.3 0.5 0.7 0.9 1.1 1.3 1.5 VSD, SOURCE-TO-DRAIN VOLTAGE (VOLTS) FIGURE 13, SOURCE-DRAIN DIODE FORWARD VOLTAGE 100
V
DD G
1
= 200V
R
= 5
200
td(on) and td(off) (ns)
V
DD G
td(off)
= 200V R = 5
80
T = 125C
J
tf
L = 100H
T = 125C
J
L = 100H
tr and tf (ns)
150
60
100
40 tr
50 td(on) 0 40 80 100 120 ID (A) FIGURE 14, DELAY TIMES vs CURRENT 60
20
80 100 120 ID (A) FIGURE 15, RISE AND FALL TIMES vs CURRENT 6,000 5,000
SWITCHING ENERGY (J)
V I
DD
0 40
60
1500
= 200V
D J
= 50A
1200
SWITCHING ENERGY (J)
T = 125C L = 100H E ON includes diode reverse recovery.
4,000 3,000 2,000 1,000 0
Eoff
900
Eon Eoff
V
DD G
600
= 200V
4-2004
R
= 5
300
T = 125C
J
Eon
L = 100H E ON includes diode reverse recovery.
050-7159 Rev A
80 90 100 110 120 ID (A) FIGURE 16, SWITCHING ENERGY vs CURRENT
0 40
50
60
70
10 15 20 25 30 35 40 45 50 RG, GATE RESISTANCE (Ohms) FIGURE 17, SWITCHING ENERGY VS. GATE RESISTANCE
0
5
Typical Performance Curves
90% 10% Gate Voltage
APT30M17JFLL
Gate Voltage TJ125C
td(on)
td(off)
T 125C J
tr
90%
Drain Current
tf
90%
Drain Voltage
5% Switching Energy
10%
5% Drain Voltage Switching Energy
10% 0
Drain Current
Figure 18, Turn-on Switching Waveforms and Definitions
Figure 19, Turn-off Switching Waveforms and Definitions
APT30DF60
V DD
IC
V CE
G D.U.T.
Figure 20, Inductive Switching Test Circuit
SOT-227 (ISOTOP(R)) Package Outline
31.5 (1.240) 31.7 (1.248) 7.8 (.307) 8.2 (.322) W=4.1 (.161) W=4.3 (.169) H=4.8 (.187) H=4.9 (.193) (4 places) 11.8 (.463) 12.2 (.480) 8.9 (.350) 9.6 (.378) Hex Nut M4 (4 places)
r = 4.0 (.157) (2 places)
4.0 (.157) 4.2 (.165) (2 places)
25.2 (0.992) 0.75 (.030) 12.6 (.496) 25.4 (1.000) 0.85 (.033) 12.8 (.504)
14.9 (.587) 15.1 (.594) 30.1 (1.185) 30.3 (1.193) 38.0 (1.496) 38.2 (1.504)
* Source
Drain
* Source terminals are shorted internally. Current handling capability is equal for either Source terminal.
* Source Dimensions in Millimeters and (Inches)
ISOTOP(R) is a Registered Trademark of SGS Thomson.
Gate
APT's products are covered by one or more of U.S.patents 4,895,810 5,045,903 5,089,434 5,182,234 5,019,522
5,262,336 6,503,786 5,256,583 4,748,103 5,283,202 5,231,474 5,434,095 5,528,058 and foreign patents. US and Foreign patents pending. All Rights Reserved.
050-7159 Rev A
4-2004
3.3 (.129) 3.6 (.143)
1.95 (.077) 2.14 (.084)

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