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APT30M36JFLL
300V
76A 0.036
S G D S
POWER MOS 7
(R)
R
FREDFET
Power MOS 7 is a new generation of low loss, high voltage, N-Channel enhancement mode power MOSFETS. Both conduction and switching (R) losses are addressed with Power MOS 7 by significantly lowering RDS(ON) (R) and Qg. Power MOS 7 combines lower conduction and switching losses along with exceptionally fast switching speeds inherent with APT's patented metal gate structure. * Lower Input Capacitance * Lower Miller Capacitance * Lower Gate Charge, Qg * Increased Power Dissipation * Easier To Drive * Popular SOT-227 Package * FAST RECOVERY BODY DIODE
SO
2 T-
27
"UL Recognized"
ISOTOP (R)
D G S
MAXIMUM RATINGS
Symbol VDSS ID IDM VGS VGSM PD TJ,TSTG TL IAR EAR EAS Parameter Drain-Source Voltage Continuous Drain Current @ TC = 25C Pulsed Drain Current
1
All Ratings: TC = 25C unless otherwise specified.
APT30M36JFLL UNIT Volts Amps
300 76 304 30 40 463 3.70 -55 to 150 300 76 50
4
Gate-Source Voltage Continuous Gate-Source Voltage Transient Total Power Dissipation @ TC = 25C Linear Derating Factor Operating and Storage Junction Temperature Range Lead Temperature: 0.063" from Case for 10 Sec. Avalanche Current
1
Volts Watts W/C C Amps mJ
(Repetitive and Non-Repetitive)
1
Repetitive Avalanche Energy
Single Pulse Avalanche Energy
2500
STATIC ELECTRICAL CHARACTERISTICS
Symbol BVDSS RDS(on) IDSS IGSS VGS(th) Characteristic / Test Conditions Drain-Source Breakdown Voltage (VGS = 0V, ID = 250A) Drain-Source On-State Resistance
2
MIN
TYP
MAX
UNIT Volts
300 0.036 250 1000 100 3 5
(VGS = 10V, ID = 38A)
Ohms A nA Volts
7-2004 050-7158 Rev B
Zero Gate Voltage Drain Current (VDS = 300V, VGS = 0V) Zero Gate Voltage Drain Current (VDS = 240V, VGS = 0V, TC = 125C) Gate-Source Leakage Current (VGS = 30V, VDS = 0V) Gate Threshold Voltage (VDS = VGS, ID = 2.5mA)
CAUTION: These Devices are Sensitive to Electrostatic Discharge. Proper Handling Procedures Should Be Followed.
APT Website - http://www.advancedpower.com
DYNAMIC CHARACTERISTICS
Symbol Ciss Coss Crss Qg Qgs Qgd td(on) tr td(off) tf Eon Eoff Eon Eoff Symbol IS ISM VSD
dv/ dt
APT30M36JFLL
Test Conditions
VGS = 0V VDS = 25V f = 1 MHz VGS = 10V VDD = 150V ID = 76A @ 25C RESISTIVE SWITCHING VGS = 15V VDD = 150V ID = 76A @ 25C 6 INDUCTIVE SWITCHING @ 25C VDD = 200V, VGS = 15V INDUCTIVE SWITCHING @ 125C VDD = 200V, VGS = 15V ID = 76A, RG = 5 ID = 76A, RG = 5 RG = 0.6
Characteristic Input Capacitance Output Capacitance Reverse Transfer Capacitance Total Gate Charge
3
MIN
TYP
MAX
UNIT pF
6480 1540 75 115 35 45 15 28 29 5 660 690 770 740
MIN TYP MAX
Gate-Source Charge Gate-Drain ("Miller") Charge Turn-on Delay Time Rise Time Turn-off Delay Time Fall Time Turn-on Switching Energy Turn-off Switching Energy Turn-on Switching Energy Turn-off Switching Energy Characteristic / Test Conditions Continuous Source Current (Body Diode) Pulsed Source Current Diode Forward Voltage Peak Diode Recovery
1 2 dt 6
nC
ns
J
SOURCE-DRAIN DIODE RATINGS AND CHARACTERISTICS
UNIT Amps Volts V/ns ns C Amps
76 304 1.3 8
Tj = 25C Tj = 125C Tj = 25C Tj = 125C Tj = 25C Tj = 125C MIN
(Body Diode) (VGS = 0V, IS = -76A)
5
dv/
t rr Q rr IRRM
Reverse Recovery Time (IS = -76A, di/dt = 100A/s) Reverse Recovery Charge (IS = -76A, di/dt = 100A/s) Peak Recovery Current (IS = -76A, di/dt = 100A/s) Characteristic Junction to Case Junction to Ambient
240 500 1.1 5.2 12 22
TYP MAX
THERMAL CHARACTERISTICS
Symbol RJC RJA UNIT C/W
0.27 40
1 Repetitive Rating: Pulse width limited by maximum junction temperature 2 Pulse Test: Pulse width < 380 s, Duty Cycle < 2% 3 See MIL-STD-750 Method 3471
0.30
, THERMAL IMPEDANCE (C/W)
4 Starting Tj = +25C, L = 0.87mH, RG = 25, Peak IL = 76A 5 dv/dt numbers reflect the limitations of the test circuit rather than the device itself. IS -ID76A di/dt 700A/s VR 300V TJ 150C 6 Eon includes diode reverse recovery. See figures 18, 20.
APT Reserves the right to change, without notice, the specifications and inforation contained herein.
0.25 0.20 0.15 0.10 0.05 0
0.9
0.7
0.5 0.3
Note:
PDM t1 t2
7-2004
050-7158 Rev B
JC
Z
0.1 0.05 10-5 10-4 SINGLE PULSE
Peak TJ = PDM x ZJC + TC
Duty Factor D = t1/t2
10-3 10-2 10-1 RECTANGULAR PULSE DURATION (SECONDS) FIGURE 1, MAXIMUM EFFECTIVE TRANSIENT THERMAL IMPEDANCE, JUNCTION-TO-CASE vs PULSE DURATION
1
Typical Performance Curves
Junction temp. (C) RC MODEL
200
APT30M36JFLL
VGS=15V 10V 9V
ID, DRAIN CURRENT (AMPERES)
160
0.0260
0.00119F
120
8V 7.5V 7V
Power (watts)
0.0585
0.0354F
80
0.185 Case temperature. (C)
0.463F
40
6.5V 6V
0 0 5 10 15 20 25 30 VDS, DRAIN-TO-SOURCE VOLTAGE (VOLTS) FIGURE 3, LOW VOLTAGE OUTPUT CHARACTERISTICS 1.4
V
GS
RDS(ON), DRAIN-TO-SOURCE ON RESISTANCE
FIGURE 2, TRANSIENT THERMAL IMPEDANCE MODEL 250
VDS> ID (ON) x RDS (ON)MAX. 250SEC. PULSE TEST @ <0.5 % DUTY CYCLE
NORMALIZED TO = 10V @ I = 38A
D
ID, DRAIN CURRENT (AMPERES)
200
1.3 1.2 1.1 1.0 0.9 0.8 VGS=20V VGS=10V
150
100 TJ = +25C TJ = +125C 0
50
TJ = -55C
0 2 4 6 8 10 VGS, GATE-TO-SOURCE VOLTAGE (VOLTS) FIGURE 4, TRANSFER CHARACTERISTICS 80 70
ID, DRAIN CURRENT (AMPERES)
0
1.20
BVDSS, DRAIN-TO-SOURCE BREAKDOWN VOLTAGE (NORMALIZED)
20 40 60 80 100 120 140 160 ID, DRAIN CURRENT (AMPERES) FIGURE 5, RDS(ON) vs DRAIN CURRENT
1.15 1.10 1.05 1.00 0.95 0.90
60 50 40 30 20 10 0
RDS(ON), DRAIN-TO-SOURCE ON RESISTANCE (NORMALIZED)
50 75 100 125 150 TC, CASE TEMPERATURE (C) FIGURE 6, MAXIMUM DRAIN CURRENT vs CASE TEMPERATURE 2.5
I V
D
25
-25 0 25 50 75 100 125 150 TJ, JUNCTION TEMPERATURE (C) FIGURE 7, BREAKDOWN VOLTAGE vs TEMPERATURE 1.2 1.1 1.0 0.9 0.8 0.7 0.6 0 25 50 75 100 125 150 TC, CASE TEMPERATURE (C) FIGURE 9, THRESHOLD VOLTAGE vs TEMPERATURE -50 -25
-50
= 38A = 10V
GS
1.5
1.0
VGS(TH), THRESHOLD VOLTAGE (NORMALIZED)
2.0
0.5
0.0 -50
-25 0 25 50 75 100 125 150 TJ, JUNCTION TEMPERATURE (C) FIGURE 8, ON-RESISTANCE vs. TEMPERATURE
050-7158 Rev B
7-2004
304
OPERATION HERE LIMITED BY RDS (ON)
20,000 10,000 5,000
C, CAPACITANCE (pF)
APT30M36JFLL
Ciss
ID, DRAIN CURRENT (AMPERES)
100 50
1,000 500
Coss
100S 10 5 TC =+25C TJ =+150C SINGLE PULSE 1 5 10 50 100 300 VDS, DRAIN-TO-SOURCE VOLTAGE (VOLTS) FIGURE 10, MAXIMUM SAFE OPERATING AREA
D
1mS 10mS
100
Crss
1
16 14 12 10 8 6 4 2 40 60 80 100 120 140 160 180 Qg, TOTAL GATE CHARGE (nC) FIGURE 12, GATE CHARGES vs GATE-TO-SOURCE VOLTAGE 80 70 60
td(on) and td(off) (ns)
V R
G
IDR, REVERSE DRAIN CURRENT (AMPERES)
VGS, GATE-TO-SOURCE VOLTAGE (VOLTS)
I
= 76A
0 10 20 30 40 50 VDS, DRAIN-TO-SOURCE VOLTAGE (VOLTS) FIGURE 11,CAPACITANCE vs DRAIN-TO-SOURCE VOLTAGE 200 100 50 TJ =+150C TJ =+25C
10
VDS= 60V VDS=150V VDS= 240V
10 5
0
0
20
0.3 0.5 0.7 0.9 1.1 1.3 1.5 VSD, SOURCE-TO-DRAIN VOLTAGE (VOLTS) FIGURE 13, SOURCE-DRAIN DIODE FORWARD VOLTAGE 140
V
DD G
1
td(off)
= 200V
120 100
tr and tf (ns)
R
= 5
T = 125C
J
L = 100H
DD
tf
= 200V
50 40 30 20 10 0 40
= 5
T = 125C
J
80 60 40 20 0 40 tr
L = 100H
td(on)
100 120 140 ID (A) FIGURE 14, DELAY TIMES vs CURRENT
V
DD G
60
80
100 120 140 ID (A) FIGURE 15, RISE AND FALL TIMES vs CURRENT 3000
60
80
2000
= 200V R = 5
T = 125C
J
Eoff
SWITCHING ENERGY (J)
2500 2000 1500 1000 500
V I
DD
SWITCHING ENERGY (J)
1500
L = 100H EON includes diode reverse recovery.
Eoff
1000
Eon
= 200V
7-2004
500
Eon
D J
= 76A
T = 125C L = 100H E ON includes diode reverse recovery.
050-7158 Rev B
100 120 140 ID (A) FIGURE 16, SWITCHING ENERGY vs CURRENT
0 40
60
80
10 15 20 25 30 35 40 45 50 RG, GATE RESISTANCE (Ohms) FIGURE 17, SWITCHING ENERGY VS. GATE RESISTANCE
0
0
5
Typical Performance Curves
90% 10% Gate Voltage TJ125C
APT30M36JFLL
Gate Voltage
td(on) tr
Drain Current
td(off) tf
90% 10% Drain Voltage
TJ125C
90%
5% Switching Energy
10%
5%
Drain Voltage Switching Energy
0
Drain Current
Figure 18, Turn-on Switching Waveforms and Definitions
Figure 19, Turn-off Switching Waveforms and Definitions
APT60DS30
V DD
ID
V DS
G D.U.T.
Figure 20, Inductive Switching Test Circuit
SOT-227 (ISOTOP(R)) Package Outline
31.5 (1.240) 31.7 (1.248) 7.8 (.307) 8.2 (.322) W=4.1 (.161) W=4.3 (.169) H=4.8 (.187) H=4.9 (.193) (4 places) 11.8 (.463) 12.2 (.480) 8.9 (.350) 9.6 (.378) Hex Nut M4 (4 places)
r = 4.0 (.157) (2 places)
4.0 (.157) 4.2 (.165) (2 places)
25.2 (0.992) 0.75 (.030) 12.6 (.496) 25.4 (1.000) 0.85 (.033) 12.8 (.504)
14.9 (.587) 15.1 (.594) 30.1 (1.185) 30.3 (1.193) 38.0 (1.496) 38.2 (1.504)
* Source
Drain
* Source terminals are shorted internally. Current handling capability is equal for either Source terminal.
* Source Dimensions in Millimeters and (Inches)
ISOTOP(R) is a Registered Trademark of SGS Thomson.
Gate
APT's products are covered by one or more of U.S.patents 4,895,810 5,045,903 5,089,434 5,182,234 5,019,522
5,262,336 6,503,786 5,256,583 4,748,103 5,283,202 5,231,474 5,434,095 5,528,058 and foreign patents. US and Foreign patents pending. All Rights Reserved.
050-7158 Rev B
7-2004
3.3 (.129) 3.6 (.143)
1.95 (.077) 2.14 (.084)

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