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APT5010B2FLL APT5010LFLL
POWER MOS 7
(R)
500V 46A 0.100
B2FLL
R
FREDFET
Power MOS 7 is a new generation of low loss, high voltage, N-Channel enhancement mode power MOSFETS. Both conduction and switching (R) losses are addressed with Power MOS 7 by significantly lowering RDS(ON) (R) and Qg. Power MOS 7 combines lower conduction and switching losses along with exceptionally fast switching speeds inherent with APT's patented metal gate structure. * Lower Input Capacitance * Increased Power Dissipation * Lower Miller Capacitance * Easier To Drive * Lower Gate Charge, Qg * Popular T-MAXTM or TO-264 Package * FAST RECOVERY BODY DIODE
MAXIMUM RATINGS
Symbol VDSS ID IDM VGS VGSM PD TJ,TSTG TL IAR EAR EAS Parameter Drain-Source Voltage Continuous Drain Current @ TC = 25C Pulsed Drain Current
1
T-MAXTM
TO-264
LFLL
D G S
All Ratings: TC = 25C unless otherwise specified.
APT5010B2FLL_LFLL UNIT Volts Amps
500 46 184 30 40 520 4.0 -55 to 150 300 50 50
4
Gate-Source Voltage Continuous Gate-Source Voltage Transient Total Power Dissipation @ TC = 25C Linear Derating Factor Operating and Storage Junction Temperature Range Lead Temperature: 0.063" from Case for 10 Sec. Avalanche Current
1
Volts Watts W/C C Amps mJ
(Repetitive and Non-Repetitive)
1
Repetitive Avalanche Energy
Single Pulse Avalanche Energy
1600
STATIC ELECTRICAL CHARACTERISTICS
Symbol BVDSS RDS(on) IDSS IGSS VGS(th) Characteristic / Test Conditions Drain-Source Breakdown Voltage (VGS = 0V, ID = 250A) Drain-Source On-State Resistance
2
MIN
TYP
MAX
UNIT Volts
500 0.100 250 1000 100 3 5
(VGS = 10V, ID = 23A)
Ohms A nA Volts
9-2004 050-7028 Rev D
Zero Gate Voltage Drain Current (VDS = 500V, VGS = 0V) Zero Gate Voltage Drain Current (VDS = 400V, VGS = 0V, TC = 125C) Gate-Source Leakage Current (VGS = 30V, VDS = 0V) Gate Threshold Voltage (VDS = VGS, ID = 2.5mA)
CAUTION: These Devices are Sensitive to Electrostatic Discharge. Proper Handling Procedures Should Be Followed.
APT Website - http://www.advancedpower.com
DYNAMIC CHARACTERISTICS
Symbol Ciss Coss Crss Qg Qgs Qgd td(on) tr td(off) tf Eon Eoff Eon Eoff Symbol IS ISM VSD
dv/ dt
APT5010B2FLL_LFLL
Test Conditions
VGS = 0V VDS = 25V f = 1 MHz VGS = 10V VDD = 250V ID = 46A @ 25C RESISTIVE SWITCHING VGS = 15V VDD = 250V ID = 46A@ 25C 6 INDUCTIVE SWITCHING @ 25C VDD = 333V, VGS = 15V INDUCTIVE SWITCHING @ 125C VDD = 333V VGS = 15V ID = 46A, RG = 5 ID = 46A, RG = 5 RG = 0.6
Characteristic Input Capacitance Output Capacitance Reverse Transfer Capacitance Total Gate Charge
3
MIN
TYP
MAX
UNIT pF
4360 895 60 95 24 50 11 15 25 3 545 510 845 595
MIN TYP MAX
Gate-Source Charge Gate-Drain ("Miller") Charge Turn-on Delay Time Rise Time Turn-off Delay Time Fall Time Turn-on Switching Energy Turn-off Switching Energy Turn-on Switching Energy Turn-off Switching Energy Characteristic / Test Conditions Continuous Source Current (Body Diode) Pulsed Source Current Diode Forward Voltage Peak Diode Recovery
1 2 dt 6
nC
ns
J
SOURCE-DRAIN DIODE RATINGS AND CHARACTERISTICS
UNIT Amps Volts V/ns ns C Amps
46 184 1.3 15
Tj = 25C Tj = 125C Tj = 25C Tj = 125C Tj = 25C Tj = 125C MIN
(Body Diode) (VGS = 0V, IS = -46A)
5
dv/
t rr Q rr IRRM
Reverse Recovery Time (IS = -46A, di/dt = 100A/s) Reverse Recovery Charge (IS = -46A, di/dt = 100A/s) Peak Recovery Current (IS = -46A, di/dt = 100A/s) Characteristic Junction to Case Junction to Ambient
280 600 2.28 6.41 15.7 23.6
TYP MAX
THERMAL CHARACTERISTICS
Symbol RJC RJA UNIT C/W
0.25 40
1 Repetitive Rating: Pulse width limited by maximum junction temperature 2 Pulse Test: Pulse width < 380 s, Duty Cycle < 2% 3 See MIL-STD-750 Method 3471
0.30
, THERMAL IMPEDANCE (C/W)
4 Starting Tj = +25C, L = 1.51mH, RG = 25, Peak IL = 46A 5 dv/dt numbers reflect the limitations of the test circuit rather than the device itself. IS -ID46A di/dt 700A/s VR 500V TJ 150C 6 Eon includes diode reverse recovery. See figures 18, 20.
APT Reserves the right to change, without notice, the specifications and inforation contained herein.
0.25 0.20
0.9
0.7 0.5 0.3 0.1 0.05 Note:
PDM t1 t2
0.15
9-2004
0.10
JC
050-7028 Rev D
0.05 0
SINGLE PULSE
Z
Peak TJ = PDM x ZJC + TC
Duty Factor D = t1/t2
10-5
10-3 10-2 10-1 RECTANGULAR PULSE DURATION (SECONDS) FIGURE 1, MAXIMUM EFFECTIVE TRANSIENT THERMAL IMPEDANCE, JUNCTION-TO-CASE vs PULSE DURATION
10-4
1.0
Typical Performance Curves
Junction temp. (C) RC MODEL
120 100 80 60 40
APT5010B2FLL_LFLL
15 &10V 8V 7.5V 7V
0.0131
0.00266F
0.0789 Power (watts) 0.0811
0.00584F
ID, DRAIN CURRENT (AMPERES)
6.5V
0.0796F
6V 20 0 5.5V
0.230 Case temperature. (C)
0.460F
FIGURE 2, TRANSIENT THERMAL IMPEDANCE MODEL 90
ID, DRAIN CURRENT (AMPERES)
VDS> ID (ON) x RDS (ON)MAX. 250SEC. PULSE TEST @ <0.5 % DUTY CYCLE
RDS(ON), DRAIN-TO-SOURCE ON RESISTANCE
100
0 5 10 15 20 25 30 VDS, DRAIN-TO-SOURCE VOLTAGE (VOLTS) FIGURE 3, LOW VOLTAGE OUTPUT CHARACTERISTICS 1.2 1.15 1.1 VGS=10V 1.05 VGS=20V 1.0 0.95 0.9 0 20 40 60 80 ID, DRAIN CURRENT (AMPERES) FIGURE 5, RDS(ON) vs DRAIN CURRENT
NORMALIZED TO V = 10V @ 23A
GS
80 70 60 50 40 30 20 10 0 0 TJ = +125C TJ = +25C
TJ = -55C
12 34567 8 9 10 VGS, GATE-TO-SOURCE VOLTAGE (VOLTS) FIGURE 4, TRANSFER CHARACTERISTICS
50
BVDSS, DRAIN-TO-SOURCE BREAKDOWN VOLTAGE (NORMALIZED)
I V
D
1.15 1.10 1.05 1.00 0.95 0.90 0.85 -50
ID, DRAIN CURRENT (AMPERES)
40
30
20
10
50 75 100 125 150 TC, CASE TEMPERATURE (C) FIGURE 6, MAXIMUM DRAIN CURRENT vs CASE TEMPERATURE
RDS(ON), DRAIN-TO-SOURCE ON RESISTANCE (NORMALIZED)
0 25
2.5
= 23A = 10V
-25 0 25 50 75 100 125 150 TJ, JUNCTION TEMPERATURE (C) FIGURE 7, BREAKDOWN VOLTAGE vs TEMPERATURE 1.2 1.1 1.0 0.9 0.8 0.7 0.6 -50
GS
2.0
1.5
1.0
VGS(TH), THRESHOLD VOLTAGE (NORMALIZED)
0.5
0.0 -50
-25 0 25 50 75 100 125 150 TJ, JUNCTION TEMPERATURE (C) FIGURE 8, ON-RESISTANCE vs. TEMPERATURE
0 25 50 75 100 125 150 TC, CASE TEMPERATURE (C) FIGURE 9, THRESHOLD VOLTAGE vs TEMPERATURE
-25
050-7028 Rev D
9-2004
184
ID, DRAIN CURRENT (AMPERES)
20,000
OPERATION HERE LIMITED BY RDS (ON)
APT5010B2FLL_LFLL
Ciss
100
10,000 100S
C, CAPACITANCE (pF)
1,000
1mS 10 10mS
Coss
100 Crss
TC =+25C TJ =+150C SINGLE PULSE 1 1 10 100 500 VDS, DRAIN-TO-SOURCE VOLTAGE (VOLTS) FIGURE 10, MAXIMUM SAFE OPERATING AREA
I
D
0 10 20 30 40 50 VDS, DRAIN-TO-SOURCE VOLTAGE (VOLTS) FIGURE 11, CAPACITANCE vs DRAIN-TO-SOURCE VOLTAGE
IDR, REVERSE DRAIN CURRENT (AMPERES)
10
16
VGS, GATE-TO-SOURCE VOLTAGE (VOLTS)
= 46A
200 100
12 VDS=100V 8 VDS=250V VDS=400V
TJ =+150C TJ =+25C 10
4
20 40 60 80 100 120 140 Qg, TOTAL GATE CHARGE (nC) FIGURE 12, GATE CHARGES vs GATE-TO-SOURCE VOLTAGE 80 70 60
td(on) and td(off) (ns)
V
0
0
1 0.3 0.5 0.7 0.9 1.1 1.3 1.5 VSD, SOURCE-TO-DRAIN VOLTAGE (VOLTS) FIGURE 13, SOURCE-DRAIN DIODE FORWARD VOLTAGE 100
V
DD G
= 330V
td(off)
90 80
R
= 5
T = 125C
J
L = 100H
tr and tf (ns)
50 40 30 20 10
DD G
= 330V
70 60 50 40 30 td(on) 20 10 tf tr
R
= 5
T = 125C
J
L = 100H
0 10
40 50 60 70 ID (A) FIGURE 14, DELAY TIMES vs CURRENT
V
DD G
20
30
40 50 60 70 ID (A) FIGURE 15, RISE AND FALL TIMES vs CURRENT 2500
V I
DD
0 10
20
30
1500
= 330V
= 330V
R
= 5
D J
= 46A
L = 100H EON includes diode reverse recovery.
SWITCHING ENERGY (J)
1200
Eon and Eoff (J)
T = 125C
J
2000
T = 125C L = 100H EON includes diode reverse recovery.
Eon
Eoff
900
1500 Eon
600
1000
9-2004
300
050-7028 Rev D
Eoff 20 30
500
40 50 60 70 ID (A) FIGURE 16, SWITCHING ENERGY vs CURRENT
0 10
10 15 20 25 30 35 40 45 50 RG, GATE RESISTANCE (Ohms) FIGURE 17, SWITCHING ENERGY VS. GATE RESISTANCE
0
0
5
APT5010B2FLL_LFLL
Gate Voltage
10 % td(on) tr
Drain Current
90%
Gate Voltage
T = 125 C J
td(off)
Drain Voltage
T = 125 C J
90% 5% 10 %
Switching Energy
5%
Drain Voltage
90% tf 10%
Switching Energy Drain Current
Figure 18, Turn-on Switching Waveforms and Definitions
Figure 19, Turn-off Switching Waveforms and Definitions
APT30DF60
V DD
ID
V DS
G D.U.T.
Figure 20, Inductive Switching Test Circuit
T-MAXTM (B2) Package Outline
4.69 (.185) 5.31 (.209) 1.49 (.059) 2.49 (.098) 15.49 (.610) 16.26 (.640) 5.38 (.212) 6.20 (.244)
TO-264 (L) Package Outline
4.60 (.181) 5.21 (.205) 1.80 (.071) 2.01 (.079) 19.51 (.768) 20.50 (.807) 3.10 (.122) 3.48 (.137) 5.79 (.228) 6.20 (.244)
Drain
20.80 (.819) 21.46 (.845)
Drain
25.48 (1.003) 26.49 (1.043)
4.50 (.177) Max. 0.40 (.016) 0.79 (.031)
2.87 (.113) 3.12 (.123) 1.65 (.065) 2.13 (.084) 2.29 (.090) 2.69 (.106) 19.81 (.780) 21.39 (.842)
2.29 (.090) 2.69 (.106)
1.01 (.040) 1.40 (.055)
Gate Drain Source
0.48 (.019) 0.84 (.033) 2.59 (.102) 3.00 (.118)
2.21 (.087) 2.59 (.102)
5.45 (.215) BSC 2-Plcs.
These dimensions are equal to the TO-247 without the mounting hole. Dimensions in Millimeters and (Inches)
5.45 (.215) BSC 2-Plcs.
Dimensions in Millimeters and (Inches)
APT's products are covered by one or more of U.S.patents 4,895,810 5,045,903 5,089,434 5,182,234 5,019,522 5,262,336 6,503,786 5,256,583 4,748,103 5,283,202 5,231,474 5,434,095 5,528,058 and foreign patents. US and Foreign patents pending. All Rights Reserved.
050-7028 Rev D
0.76 (.030) 1.30 (.051) 2.79 (.110) 3.18 (.125)
9-2004
19.81 (.780) 20.32 (.800)
Gate Drain Source

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