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APT5518BFLL APT5518SFLL
550V 31A 0.180
BFLL D3PAK
TO-247
POWER MOS 7
(R)
R
FREDFET
Power MOS 7 is a new generation of low loss, high voltage, N-Channel enhancement mode power MOSFETS. Both conduction and switching (R) losses are addressed with Power MOS 7 by significantly lowering RDS(ON) (R) and Qg. Power MOS 7 combines lower conduction and switching losses along with exceptionally fast switching speeds inherent with APT's patented metal gate structure. * Lower Input Capacitance * Lower Miller Capacitance * Lower Gate Charge, Qg * Increased Power Dissipation * Easier To Drive * TO-247 or Surface Mount D3PAK Package * FAST RECOVERY BODY DIODE
SFLL
D G S
MAXIMUM RATINGS
Symbol VDSS ID IDM VGS VGSM PD TJ,TSTG TL IAR EAR EAS Parameter Drain-Source Voltage Continuous Drain Current @ TC = 25C Pulsed Drain Current
1
All Ratings: TC = 25C unless otherwise specified.
APT5518 UNIT Volts Amps
550 31 124 30 40 403 3.23 -55 to 150 300 31 30
4
Gate-Source Voltage Continuous Gate-Source Voltage Transient Total Power Dissipation @ TC = 25C Linear Derating Factor Operating and Storage Junction Temperature Range Lead Temperature: 0.063" from Case for 10 Sec. Avalanche Current
1
Volts Watts W/C C Amps mJ
(Repetitive and Non-Repetitive)
1
Repetitive Avalanche Energy
Single Pulse Avalanche Energy
1300
STATIC ELECTRICAL CHARACTERISTICS
Symbol BVDSS ID(on) RDS(on) IDSS IGSS VGS(th) Characteristic / Test Conditions Drain-Source Breakdown Voltage (VGS = 0V, ID = 250A) On State Drain Current
2
MIN
TYP
MAX
UNIT Volts Amps
550 31 0.180 250 1000 100 3 5
(VDS > I D(on) x R DS(on) Max, VGS = 10V)
2
Drain-Source On-State Resistance
(VGS = 10V, 15.5A)
Ohms A nA Volts
3-2003 050-7197 Rev A
Zero Gate Voltage Drain Current (VDS = 550V, VGS = 0V) Zero Gate Voltage Drain Current (VDS = 440V, VGS = 0V, TC = 125C) Gate-Source Leakage Current (VGS = 30V, VDS = 0V) Gate Threshold Voltage (VDS = VGS, ID = 1mA)
CAUTION: These Devices are Sensitive to Electrostatic Discharge. Proper Handling Procedures Should Be Followed.
APT Website - http://www.advancedpower.com
DYNAMIC CHARACTERISTICS
Symbol C iss Coss C rss Qg Qgs Qgd td(on) tr td(off) tf Eon Eoff Eon Eoff Symbol IS ISM VSD
dv/ dt
APT5518 BFLL - SFLL
Test Conditions
VGS = 0V VDS = 25V f = 1 MHz VGS = 10V VDD = 275V ID = 31A @ 25C RESISTIVE SWITCHING VGS = 15V VDD = 275V ID = 31A @ 25C RG = 0.6 6 INDUCTIVE SWITCHING @ 25C VDD = 367V, VGS = 15V ID = 31A, RG = 5 6 INDUCTIVE SWITCHING @ 125C VDD = 367V VGS = 15V ID = 31A, RG = 5
Characteristic Input Capacitance Output Capacitance Reverse Transfer Capacitance Total Gate Charge
3
MIN
TYP
MAX
UNIT pF
3286 625 31 67 26 34 15 11 37 11 339 190 585 227
MIN TYP MAX
Gate-Source Charge Gate-Drain ("Miller ") Charge Turn-on Delay Time Rise Time Turn-off Delay Time Fall Time Turn-on Switching Energy Turn-off Switching Energy Turn-on Switching Energy Turn-off Switching Energy Characteristic / Test Conditions Continuous Source Current (Body Diode) Pulsed Source Current Diode Forward Voltage Peak Diode Recovery
1 2 dt
nC
ns
J
SOURCE-DRAIN DIODE RATINGS AND CHARACTERISTICS
UNIT Amps Volts V/ns ns
31 124 1.3 15
Tj = 25C Tj = 125C Tj = 25C Tj = 125C Tj = 25C Tj = 125C MIN
(Body Diode) (VGS = 0V, IS = -31A)
5
dv/
t rr
Reverse Recovery Time (IS = -31A, di/dt = 100A/s) Reverse Recovery Charge (IS = -31A, di/dt = 100A/s) Peak Recovery Current (IS = -31A, di/dt = 100A/s) Characteristic Junction to Case Junction to Ambient
250 400 1.9 6 15 26
TYP MAX
Q rr IRRM
C
Amps
THERMAL CHARACTERISTICS
Symbol RJC RJA UNIT C/W
0.31 40
1 Repetitive Rating: Pulse width limited by maximum junction temperature 2 Pulse Test: Pulse width < 380 s, Duty Cycle < 2% 3 See MIL-STD-750 Method 3471
0.35
, THERMAL IMPEDANCE (C/W)
4 Starting Tj = +25C, L = 2.71mH, RG = 25, Peak IL = 31A 5 dv/dt numbers reflect the limitations of the test circuit rather than the device itself. IS -ID31A di/dt 700A/s VR VDSS TJ 150C 6 Eon includes diode reverse recovery. See figures 18, 20.
APT Reserves the right to change, without notice, the specifications and information contained herein.
0.30 0.25
0.9
0.7 0.20 0.5 0.15 0.10 0.05 0 0.3 Note:
PDM t1 t2 Duty Factor D = t1/t2 Peak TJ = PDM x ZJC + TC
3-2003
050-7197 Rev A
Z
JC
0.1 0.05 10-5 10-4 SINGLE PULSE
10-3 10-2 10-1 RECTANGULAR PULSE DURATION (SECONDS) FIGURE 1, MAXIMUM EFFECTIVE TRANSIENT THERMAL IMPEDANCE, JUNCTION-TO-CASE vs PULSE DURATION
1.0
Typical Performance Curves
100
RC MODEL Junction temp. ( "C) 0.119 Power (Watts) 0.191 Case temperature 0.319F 0.0135F
APT5518 BFLL - SFLL
ID, DRAIN CURRENT (AMPERES)
80
VGS =15 & 10V 7.5V 7V
60
40
6.5V
6V 20 5.5V 5V 0 5 10 15 20 25 30 VDS, DRAIN-TO-SOURCE VOLTAGE (VOLTS) FIGURE 3, LOW VOLTAGE OUTPUT CHARACTERISTICS 0
FIGURE 2, TRANSIENT THERMAL IMPEDANCE MODEL 100
VDS> ID (ON) x RDS (ON)MAX. 250SEC. PULSE TEST @ <0.5 % DUTY CYCLE
RDS(ON), DRAIN-TO-SOURCE ON RESISTANCE
1.40
V
GS
NORMALIZED TO = 10V @ 15.5A
ID, DRAIN CURRENT (AMPERES)
80
1.30 1.20 VGS=10V
60
1.10
40 TJ = +125C 20 TJ = +25C TJ = -55C 0 0 2 4 6 8 10 VGS, GATE-TO-SOURCE VOLTAGE (VOLTS) FIGURE 4, TRANSFER CHARACTERISTICS
1.00
VGS=20V
0.90 0.80
0
10 20 30 40 50 60 ID, DRAIN CURRENT (AMPERES) FIGURE 5, RDS(ON) vs DRAIN CURRENT
35 30 25 20 15 10 05 0 25
BVDSS, DRAIN-TO-SOURCE BREAKDOWN VOLTAGE (NORMALIZED)
I
D
1.15
ID, DRAIN CURRENT (AMPERES)
1.10
1.05
1.00
0.95 0.90 0.85 -50
RDS(ON), DRAIN-TO-SOURCE ON RESISTANCE (NORMALIZED)
50 75 100 125 150 TC, CASE TEMPERATURE (C) FIGURE 6, MAXIMUM DRAIN CURRENT vs CASE TEMPERATURE 2.5
= 15.5A V
GS
-25 0 25 50 75 100 125 150 TJ, JUNCTION TEMPERATURE (C) FIGURE 7, BREAKDOWN VOLTAGE vs TEMPERATURE 1.2
= 10V
VGS(TH), THRESHOLD VOLTAGE (NORMALIZED)
2.0
1.1
1.0 0.9 0.8
1.5
1.0
0.5
0.7 0.6 -50
050-7197 Rev A
0.0 -50
-25 0 25 50 75 100 125 150 TJ, JUNCTION TEMPERATURE (C) FIGURE 8, ON-RESISTANCE vs. TEMPERATURE
-25 0 25 50 75 100 125 150 TC, CASE TEMPERATURE (C) FIGURE 9, THRESHOLD VOLTAGE vs TEMPERATURE
3-2003
APT5518 BFLL - SFLL
126
OPERATION HERE LIMITED BY RDS (ON)
10,000 Ciss 100S
C, CAPACITANCE (pF)
ID, DRAIN CURRENT (AMPERES)
50 1,000 Coss
10
100
1mS TC =+25C TJ =+150C SINGLE PULSE 1 1 10 100 550 VDS, DRAIN-TO-SOURCE VOLTAGE (VOLTS) FIGURE 10, MAXIMUM SAFE OPERATING AREA
I = 31A
Crss 10mS 0 10 20 30 40 50 VDS, DRAIN-TO-SOURCE VOLTAGE (VOLTS) FIGURE 11, CAPACITANCE vs DRAIN-TO-SOURCE VOLTAGE
IDR, REVERSE DRAIN CURRENT (AMPERES)
10
VGS, GATE-TO-SOURCE VOLTAGE (VOLTS)
16
D
200 100
12
VDS=110V VDS=275V
TJ =+150C TJ =+25C 10
8
VDS=440V
4
20 40 60 80 100 Qg, TOTAL GATE CHARGE (nC) FIGURE 12, GATE CHARGE vs GATE-TO-SOURCE VOLTAGE 60 50
td(on) and td(off) (ns)
0
0
1 0.3 0.5 0.7 0.9 1.1 1.3 1.5 VSD, SOURCE-TO-DRAIN VOLTAGE (VOLTS) FIGURE 13, SOURCE-DRAIN DIODE FORWARD VOLTAGE 60
V
DD G
= 367V
R
= 5
td(off)
50
T = 125C
J
L = 100H
tf
40 30
V
R
G
= 5
T = 125C
J
tr and tf (ns)
DD
= 367V
40
30 20
L = 100H
20 td(on) 10 0 0 10 20 30 40 50 ID (A) FIGURE 14, DELAY TIMES vs CURRENT 1000
V
DD G
10 0
tr
30 40 50 ID (A) FIGURE 15, RISE AND FALL TIMES vs CURRENT 1000
0
10
20
= 367V
R
= 5
L = 100H E ON includes diode reverse recovery.
SWITCHING ENERGY (J)
800
SWITCHING ENERGY (J)
T = 125C
J
Eon
800 Eon 600
600
400
400 Eoff 200
V I
DD
= 367V
3-2003
D J
= 31A
200 Eoff
T = 125C L = 100H E ON includes diode reverse recovery.
050-7197 Rev A
0 0 10
0 20 10 15 20 25 30 35 40 45 50 RG, GATE RESISTANCE (Ohms) FIGURE 17, SWITCHING ENERGY VS. GATE RESISTANCE 0 5
30 40 50 ID (A) FIGURE 16, SWITCHING ENERGY vs CURRENT
Typical Performance Curves
APT5518 BFLL - SFLL
10 %
Gate Voltage
90%
TJ = 125 C
Gate Voltage T = 125 C J
t
td(on) tr
Drain Current
d(off)
t f 90%
5%
Drain Voltage
Drain Voltage
90% 5% 10 %
Switching Energy
10% 0
Drain Current
Switching Energy
Figure 18, Turn-on Switching Waveforms and Definitions
Figure 19, Turn-off Switching Waveforms and Definitions
APT30DF60B
V DD
IC
V CE
G D.U.T.
Figure 20, Inductive Switching Test Circuit
TO-247 Package Outline
Drain (Heat Sink)
4.69 (.185) 5.31 (.209) 1.49 (.059) 2.49 (.098) 6.15 (.242) BSC
D PAK Package Outline
4.98 (.196) 5.08 (.200) 1.47 (.058) 1.57 (.062) 15.95 (.628) 16.05 (.632) 13.41 (.528) 13.51 (.532)
3
15.49 (.610) 16.26 (.640) 5.38 (.212) 6.20 (.244)
1.04 (.041) 1.15 (.045)
Drain
20.80 (.819) 21.46 (.845) 3.50 (.138) 3.81 (.150)
Revised 4/18/95
13.79 (.543) 13.99 (.551)
Revised 8/29/97
11.51 (.453) 11.61 (.457)
0.46 (.018) 0.56 (.022) {3 Plcs}
4.50 (.177) Max. 0.40 (.016) 0.79 (.031) 2.87 (.113) 3.12 (.123) 1.65 (.065) 2.13 (.084) 1.01 (.040) 1.40 (.055)
19.81 (.780) 20.32 (.800)
Gate Drain Source
5.45 (.215) BSC {2 Plcs.}
Heat Sink (Drain) and Leads are Plated
2.21 (.087) 2.59 (.102)
5.45 (.215) BSC 2-Plcs.
Dimensions in Millimeters and (Inches)
Source Drain Gate Dimensions in Millimeters (Inches)
APT's products are covered by one or more of U.S.patents 4,895,810 5,045,903 5,089,434 5,182,234 5,019,522 5,262,336 6,503,786 5,256,583 4,748,103 5,283,202 5,231,474 5,434,095 5,528,058 and foreign patents. US and Foreign patents pending. All Rights Reserved.
050-7197 Rev A
3-2003
0.020 (.001) 0.178 (.007) 2.67 (.105) 2.84 (.112)
1.27 (.050) 1.40 (.055) 1.98 (.078) 2.08 (.082)
1.22 (.048) 1.32 (.052)
3.81 (.150) 4.06 (.160) (Base of Lead)

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