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APT8011JFLL
800V 51A 0.125
POWER MOS 7
(R)
R
FREDFET
G
S D
S
Power MOS 7 is a new generation of low loss, high voltage, N-Channel enhancement mode power MOSFETS. Both conduction and switching (R) losses are addressed with Power MOS 7 by significantly lowering RDS(ON) (R) and Qg. Power MOS 7 combines lower conduction and switching losses along with exceptionally fast switching speeds inherent with Microsemi's patented metal gate structure. * Lower Input Capacitance * Lower Miller Capacitance * Lower Gate Charge, Qg
MAXIMUM RATINGS
Symbol VDSS ID IDM VGS VGSM PD TJ,TSTG TL IAR EAR EAS Parameter Drain-Source Voltage Continuous Drain Current @ TC = 25C Pulsed Drain Current
1
SO
2 T-
27
"UL Recongnized"
file # 145592
ISOTOP fi
* Increased Power Dissipation * Easier To Drive * Popular SOT-227 Package * FAST RECOVERY BODY DIODE
D G S
All Ratings: TC = 25C unless otherwise specified.
APT8011JFLL UNIT Volts Amps
800 51 204 30 40 694 5.56 -55 to 150 300 51 50
4
Gate-Source Voltage Continuous Gate-Source Voltage Transient Total Power Dissipation @ TC = 25C Linear Derating Factor Operating and Storage Junction Temperature Range Lead Temperature: 0.063" from Case for 10 Sec. Avalanche Current
1
Volts Watts W/C C Amps mJ
(Repetitive and Non-Repetitive)
1
Repetitive Avalanche Energy
Single Pulse Avalanche Energy
3600
STATIC ELECTRICAL CHARACTERISTICS
Symbol BVDSS RDS(on) IDSS IGSS VGS(th) Characteristic / Test Conditions Drain-Source Breakdown Voltage (VGS = 0V, ID = 250A) Drain-Source On-State Resistance
2
MIN
TYP
MAX
UNIT Volts
800 0.125 250 1000 100 3 5
(VGS = 10V, 25.5A)
Ohms A nA Volts
5-2006 050-7094 Rev B
Zero Gate Voltage Drain Current (VDS = 800V, VGS = 0V) Zero Gate Voltage Drain Current (VDS = 640V, VGS = 0V, TC = 125C) Gate-Source Leakage Current (VGS = 30V, VDS = 0V) Gate Threshold Voltage (VDS = VGS, ID = 5mA)
CAUTION: These Devices are Sensitive to Electrostatic Discharge. Proper Handling Procedures Should Be Followed.
Microsemi Website - http://www.microsemi.com
DYNAMIC CHARACTERISTICS
Symbol Ciss Coss C rss Qg Qgs Qgd td(on) tr td(off) tf Eon Eoff Eon Eoff Symbol IS ISM VSD
dv/ dt
APT8011JFLL
Test Conditions
VGS = 0V VDS = 25V f = 1 MHz VGS = 10V VDD = 400V ID = 51A @ 25C RESISTIVE SWITCHING VGS = 15V VDD = 400V ID = 51A @ 25C 6 INDUCTIVE SWITCHING @ 25C VDD = 533V, VGS = 15V INDUCTIVE SWITCHING @ 125C VDD = 533V VGS = 15V ID = 51A, RG = 5 ID = 51A, RG = 5 RG = 0.6
Characteristic Input Capacitance Output Capacitance Reverse Transfer Capacitance Total Gate Charge
3
MIN
TYP
MAX
UNIT pF
9480 1890 340 650 100 525 23 23 83 19 1390 1545 2095 1800
MIN TYP MAX
Gate-Source Charge Gate-Drain ("Miller ") Charge Turn-on Delay Time Rise Time Turn-off Delay Time Fall Time Turn-on Switching Energy Turn-off Switching Energy Turn-on Switching Energy Turn-off Switching Energy Characteristic / Test Conditions Continuous Source Current (Body Diode) Pulsed Source Current Diode Forward Voltage Peak Diode Recovery
1 2 dt 6
nC
ns
J
SOURCE-DRAIN DIODE RATINGS AND CHARACTERISTICS
UNIT Amps Volts V/ns ns C Amps
51 204 1.3 18
Tj = 25C Tj = 125C Tj = 25C Tj = 125C Tj = 25C Tj = 125C MIN
(Body Diode) (VGS = 0V, IS = -51A)
5
dv/
t rr Q rr IRRM
Reverse Recovery Time (IS = -51A, di/dt = 100A/s) Reverse Recovery Charge (IS = -51A, di/dt = 100A/s) Peak Recovery Current (IS = -51A, di/dt = 100A/s) Characteristic Junction to Case Junction to Ambient
375 1200 2.5 18 16 36
TYP MAX
THERMAL CHARACTERISTICS
Symbol RJC RJA UNIT C/W
0.18 40
1 Repetitive Rating: Pulse width limited by maximum junction temperature 2 Pulse Test: Pulse width < 380 s, Duty Cycle < 2% 3 See MIL-STD-750 Method 3471
0.20
, THERMAL IMPEDANCE (C/W)
4 Starting Tj = +25C, L = 2.77mH, RG = 25, Peak IL = 51A 5 dv/dt numbers reflect the limitations of the test circuit rather than the device itself. IS -ID51A di/dt 700A/s VR 800 TJ 150C 6 Eon includes diode reverse recovery. See figures 18, 20.
Microsemi reserves the right to change, without notice, the specifications and information contained herein.
0.16
0.9
0.7 0.12 0.5 0.08 0.3 0.04 0.1 0 0.05 10-5 10-4 SINGLE PULSE Note:
PDM t1 t2 Peak TJ = PDM x ZJC + TC Duty Factor D = t1/t2
5-2006
050-7094 Rev B
Z
JC
10-3 10-2 10-1 1.0 RECTANGULAR PULSE DURATION (SECONDS) FIGURE 1, MAXIMUM EFFECTIVE TRANSIENT THERMAL IMPEDANCE, JUNCTION-TO-CASE vs PULSE DURATION
10
Typical Performance Curves
ID, DRAIN CURRENT (AMPERES)
160 140 120 100 80 60 40 20 5V VGS =15 & 10V 6V 5.5V
APT8011JFLL
TJ ( C)
0.0375 Dissipated Power (Watts) 0.0554 0.751
TC ( C)
0.142
ZEXT
4.5V
ZEXT are the external thermal impedances: Case to sink, sink to ambient, etc. Set to zero when modeling only the case to junction.
FIGURE 2, TRANSIENT THERMAL IMPEDANCE MODEL
RDS(ON), DRAIN-TO-SOURCE ON RESISTANCE
140
ID, DRAIN CURRENT (AMPERES)
120 100 80 60 40 20 0
VDS> ID (ON) x RDS (ON)MAX. 250SEC. PULSE TEST @ <0.5 % DUTY CYCLE
0 5 10 15 20 25 30 VDS, DRAIN-TO-SOURCE VOLTAGE (VOLTS) FIGURE 3, LOW VOLTAGE OUTPUT CHARACTERISTICS 1.40
V
GS
0
4V
NORMALIZED TO = 10V @ 25.5A
1.30 1.20 VGS=10V 1.10 1.00 0.90 0.80
TJ = -55C TJ = +25C TJ = +125C
VGS=20V
0 1 2 3 4 5 6 7 8 9 VGS, GATE-TO-SOURCE VOLTAGE (VOLTS) FIGURE 4, TRANSFER CHARACTERISTICS
0
60 50 40 30 20 10 0 25
BVDSS, DRAIN-TO-SOURCE BREAKDOWN VOLTAGE (NORMALIZED)
1.15
20 40 60 80 100 120 140 ID, DRAIN CURRENT (AMPERES) FIGURE 5, RDS(ON) vs DRAIN CURRENT
ID, DRAIN CURRENT (AMPERES)
1.10
1.05
1.00
0.95
RDS(ON), DRAIN-TO-SOURCE ON RESISTANCE (NORMALIZED)
50 75 100 125 150 TC, CASE TEMPERATURE (C) FIGURE 6, MAXIMUM DRAIN CURRENT vs CASE TEMPERATURE 2.5
I
D
0.90
-50 -25 0 25 50 75 100 125 150 TJ, JUNCTION TEMPERATURE (C) FIGURE 7, BREAKDOWN VOLTAGE vs TEMPERATURE 1.2 1.1 1.0 0.9 0.8 0.7 0.6 -50
= 25.5A
V
GS
= 10V
2.0
1.5
1.0
VGS(TH), THRESHOLD VOLTAGE (NORMALIZED)
0.5
0.0 -50
-25 0 25 50 75 100 125 150 TJ, JUNCTION TEMPERATURE (C) FIGURE 8, ON-RESISTANCE vs. TEMPERATURE
-25 0 25 50 75 100 125 150 TC, CASE TEMPERATURE (C) FIGURE 9, THRESHOLD VOLTAGE vs TEMPERATURE
050-7094 Rev B
5-2006
204
ID, DRAIN CURRENT (AMPERES)
OPERATION HERE LIMITED BY RDS (ON)
30,000 100S
C, CAPACITANCE (pF)
APT8011JFLL
Ciss
100 50
10,000
10 5 TC =+25C TJ =+150C SINGLE PULSE
1mS
Coss 1,000
10mS
Crss 100
1
1 10 100 800 VDS, DRAIN-TO-SOURCE VOLTAGE (VOLTS) FIGURE 10, MAXIMUM SAFE OPERATING AREA
I
D
VGS, GATE-TO-SOURCE VOLTAGE (VOLTS)
= 51A
IDR, REVERSE DRAIN CURRENT (AMPERES)
16
0 10 20 30 40 50 VDS, DRAIN-TO-SOURCE VOLTAGE (VOLTS) FIGURE 11, CAPACITANCE vs DRAIN-TO-SOURCE VOLTAGE 200 100 TJ =+150C TJ =+25C 10
12 VDS= 160V 8 VDS= 400V VDS= 640V 4
100 200 300 400 500 600 700 800 Qg, TOTAL GATE CHARGE (nC) FIGURE 12, GATE CHARGES vs GATE-TO-SOURCE VOLTAGE 350 300 250 200 150 100 50 0 10 td(on) 40 50 60 70 80 ID (A) FIGURE 14, DELAY TIMES vs CURRENT
DD G
0 0
0.3 0.5 0.7 0.9 1.1 1.3 1.5 VSD, SOURCE-TO-DRAIN VOLTAGE (VOLTS) FIGURE 13, SOURCE-DRAIN DIODE FORWARD VOLTAGE 120
V
DD G
1
= 533V
td(off)
R
= 5
100 80
tr and tf (ns)
T = 125C
J
L = 100H
tf
td(on) and td(off) (ns)
V
DD G
= 533V
R
= 5
T = 125C
J
L = 100H
60 40 20 0 10
tr 20 30
20
30
40 50 60 70 80 ID (A) FIGURE 15, RISE AND FALL TIMES vs CURRENT 14,000 12,000
SWITCHING ENERGY (J)
V I
DD
4000 3500
SWITCHING ENERGY (J)
V
= 533V
= 533V
R
= 5
D J
= 51A
T = 125C
J
T = 125C L = 100H E ON includes diode reverse recovery.
3000 2500 2000 1500 1000 500
L = 100H EON includes diode reverse recovery.
Eoff
10,000 8,000 6,000 4,000
Eon
5-2006
Eoff
Eon 2,000 0
050-7094 Rev B
40 50 60 70 80 ID (A) FIGURE 16, SWITCHING ENERGY vs CURRENT
0 10
20
30
10 15 20 25 30 35 40 45 50 RG, GATE RESISTANCE (Ohms) FIGURE 17, SWITCHING ENERGY VS. GATE RESISTANCE
0
5
Typical Performance Curves
APT8011JFLL
10% Gate Voltage td(on) tr 90% 5%
Switching Energy
TJ = 125C
90% td(off)
Gate Voltage
TJ = 125C
Drain Current 90% tf 5% DrainVoltage
Switching Energy
DrainVoltage
10%
10% Drain Current 0
Figure 18, Turn-on Switching Waveforms and Definitions
Figure 19, Turn-off Switching Waveforms and Definitions
APT30DF60
V DD
IC
V CE
G D.U.T.
Figure 20, Inductive Switching Test Circuit
SOT-227 (ISOTOP(R)) Package Outline
31.5 (1.240) 31.7 (1.248) 7.8 (.307) 8.2 (.322) W=4.1 (.161) W=4.3 (.169) H=4.8 (.187) H=4.9 (.193) (4 places) 11.8 (.463) 12.2 (.480) 8.9 (.350) 9.6 (.378) Hex Nut M4 (4 places)
r = 4.0 (.157) (2 places)
4.0 (.157) 4.2 (.165) (2 places)
25.2 (0.992) 0.75 (.030) 12.6 (.496) 25.4 (1.000) 0.85 (.033) 12.8 (.504)
14.9 (.587) 15.1 (.594) 30.1 (1.185) 30.3 (1.193) 38.0 (1.496) 38.2 (1.504)
* Source
Drain
* Source terminals are shorted internally. Current handling capability is equal for either Source terminal.
* Source Dimensions in Millimeters and (Inches)
Gate
ISOTOP(R) is a registered trademark of ST Microelectronics NV. Microsemi's products are covered by one or more of U.S.patents 4,895,810 5,045,903 5,089,434 5,182,234 5,019,522 5,262,336 6,503,786 5,256,583 4,748,103 5,283,202 5,231,474 5,434,095 5,528,058 and foreign patents. US and Foreign patents pending. All Rights Reserved.
050-7094 Rev B
5-2006
3.3 (.129) 3.6 (.143)
1.95 (.077) 2.14 (.084)

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