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APT8030JVFR
800V 25A 0.300
S G D S
POWER MOS V (R)
FREDFET
Power MOS V(R) is a new generation of high voltage N-Channel enhancement mode power MOSFETs. This new technology minimizes the JFET effect, increases packing density and reduces the on-resistance. Power MOS V(R) also achieves faster switching speeds through optimized gate layout.
SO
ISOTOP (R)
2 T-
27
"UL Recognized"
* Fast Recovery Body Diode * Lower Leakage * Faster Switching
* 100% Avalanche Tested
FREDFET
D G S
* Popular SOT-227 Package
Symbol VDSS ID IDM VGS VGSM PD TJ,TSTG TL IAR EAR EAS
Parameter Drain-Source Voltage Continuous Drain Current @ TC = 25C Pulsed Drain Current
1
APT8030JVFR
UNIT Volts Amps
800 25 100 30 40 450 3.6 -55 to 150 300 25 50
4
Gate-Source Voltage Continuous Gate-Source Voltage Transient Total Power Dissipation @ TC = 25C Linear Derating Factor Operating and Storage Junction Temperature Range Lead Temperature: 0.063" from Case for 10 Sec. Avalanche Current
1
Volts Watts W/C C Amps mJ
(Repetitive and Non-Repetitive)
1
Repetitive Avalanche Energy
Single Pulse Avalanche Energy
2500
STATIC ELECTRICAL CHARACTERISTICS
Symbol BVDSS ID(on) RDS(on) IDSS IGSS VGS(th) Characteristic / Test Conditions Drain-Source Breakdown Voltage (VGS = 0V, ID = 250A) On State Drain Current
2
MIN
TYP
MAX
UNIT Volts Amps
800 25 0.300 250 1000 2 4 100
(VDS > I D(on) x R DS(on) Max, VGS = 10V)
2
Drain-Source On-State Resistance
(VGS = 10V, 0.5 ID[Cont.])
Ohms A
1-2005 050-5598 Rev B
Zero Gate Voltage Drain Current (VDS = VDSS, VGS = 0V) Zero Gate Voltage Drain Current (VDS = 0.8 VDSS, VGS = 0V, TC = 125C) Gate-Source Leakage Current (VGS = 30V, VDS = 0V) Gate Threshold Voltage (VDS = VGS, ID = 2.5mA)
APT Website - http://www.advancedpower.com
nA Volts
CAUTION: These Devices are Sensitive to Electrostatic Discharge. Proper Handling Procedures Should Be Followed.
DYNAMIC CHARACTERISTICS
Symbol Ciss Coss Crss Qg Qgs Qgd t d(on) tr t d(off) tf Characteristic Input Capacitance Output Capacitance Reverse Transfer Capacitance Total Gate Charge
3
APT8030JVFR
Test Conditions VGS = 0V VDS = 25V f = 1 MHz VGS = 10V VDD = 0.5 VDSS ID = ID [Cont.] @ 25C VGS = 15V VDD = 0.5 VDSS ID = ID [Cont.] @ 25C RG = 0.6 MIN TYP MAX UNIT pF
6600 645 320 340 31 170 16 14 59 8
7900 900 480 510 47 250 32 28 90 16
ns nC
Gate-Source Charge Gate-Drain ("Miller ") Charge Turn-on Delay Time Rise Time Turn-off Delay Time Fall Time
SOURCE-DRAIN DIODE RATINGS AND CHARACTERISTICS
Symbol IS ISM VSD
dv/ dt
Characteristic / Test Conditions Continuous Source Current (Body Diode) Pulsed Source Current Diode Forward Voltage Peak Diode Recovery
1 2 dt
MIN
TYP
MAX
UNIT Amps Volts V/ns ns
25 100 1.3 18
Tj = 25C Tj = 125C Tj = 25C Tj = 125C Tj = 25C Tj = 125C
(Body Diode) (VGS = 0V, IS = -ID [Cont.])
5
dv/
t rr Q rr IRRM
Reverse Recovery Time (IS = -ID [Cont.], di/dt = 100A/s) Reverse Recovery Charge (IS = -ID [Cont.], di/dt = 100A/s) Peak Recovery Current (IS = -ID [Cont.], di/dt = 100A/s)
300 600 2.0 6.7 13 22
C
Amps
THERMAL / PACKAGE CHARACTERISTICS
Symbol RJC RJA VIsolation Torque Characteristic Junction to Case Junction to Ambient RMS Voltage (50-60 Hz Sinusoidal Waveform From Terminals to Mounting Base for 1 Min.) Maximum Torque for Device Mounting Screws and Electrical Terminations. MIN TYP MAX UNIT C/W Volts
0.28 40 2500 13
lb*in
1 Repetitive Rating: Pulse width limited by maximum junction
temperature. 2 Pulse Test: Pulse width < 380 S, Duty Cycle < 2%
3 See MIL-STD-750 Method 3471 4 Starting T = +25C, L = 8.00mH, R = 25, Peak I = 25A j G L 5 I - -I [Cont.], di/ = 100A/s, V S D DD - VDSS, Tj - 150C, RG = 2.0, dt
VR = 200V
APT Reserves the right to change, without notice, the specifications and information contained herein. 0.3
, THERMAL IMPEDANCE (C/W)
D=0.5 0.1 0.2 0.05 0.1 0.05
PDM
1-2005
0.01 0.005
Note: 0.02 0.01 SINGLE PULSE
t2 Duty Factor D = t1/t2 Peak TJ = PDM x ZJC + TC t1
050-5598 Rev B
Z
JC
0.001 10-5
10-3 10-2 10-1 1.0 10 RECTANGULAR PULSE DURATION (SECONDS) FIGURE 1, MAXIMUM EFFECTIVE TRANSIENT THERMAL IMPEDANCE, JUNCTION-TO-CASE vs PULSE DURATION
10-4
APT8030JVFR
50 VGS=5.5V, 6V, 7V, 10V & 15V
ID, DRAIN CURRENT (AMPERES) ID, DRAIN CURRENT (AMPERES)
50 VGS=15V 40 VGS=10V VGS=5.5V, 6V & 7V 5V
40
5V
30
30
20 4.5V 10 4V 0 100 200 300 400 VDS, DRAIN-TO-SOURCE VOLTAGE (VOLTS) FIGURE 2, TYPICAL OUTPUT CHARACTERISTICS 0
20 4.5V 10 4V 0 4 8 12 16 VDS, DRAIN-TO-SOURCE VOLTAGE (VOLTS) FIGURE 3, TYPICAL OUTPUT CHARACTERISTICS 0
RDS(ON), DRAIN-TO-SOURCE ON RESISTANCE
100
ID, DRAIN CURRENT (AMPERES)
TJ = -55C TJ = +25C TJ = +125C
1.4
V
GS
NORMALIZED TO = 10V @ 0.5 I [Cont.]
D
80
1.3
60
VDS> ID (ON) x RDS (ON)MAX. 250SEC. PULSE TEST @ <0.5 % DUTY CYCLE
1.2 VGS=10V 1.1 VGS=20V
40 TJ = +125C TJ = +25C 0 TJ = -55C
20
1.0
0 2 4 6 8 VGS, GATE-TO-SOURCE VOLTAGE (VOLTS) FIGURE 4, TYPICAL TRANSFER CHARACTERISTICS 25
ID, DRAIN CURRENT (AMPERES)
0.9
0
10 20 30 40 50 60 ID, DRAIN CURRENT (AMPERES) FIGURE 5, RDS(ON) vs DRAIN CURRENT
20
BVDSS, DRAIN-TO-SOURCE BREAKDOWN VOLTAGE (NORMALIZED)
1.15
1.10
15
1.05
10
1.00
5
0.95
50 75 100 125 150 TC, CASE TEMPERATURE (C) FIGURE 6, MAXIMUM DRAIN CURRENT vs CASE TEMPERATURE
RDS(ON), DRAIN-TO-SOURCE ON RESISTANCE (NORMALIZED)
0
25
-25 0 25 50 75 100 125 150 TJ, JUNCTION TEMPERATURE (C) FIGURE 7, BREAKDOWN VOLTAGE vs TEMPERATURE 1.2
0.90
-50
2.5
I = 0.5 I [Cont.]
D D
VGS(TH), THRESHOLD VOLTAGE (NORMALIZED)
V
GS
= 10V
2.0
1.1 1.0 0.9 0.8 0.7
1.5
1.0
0.5
0.0 -50
-25 0 25 50 75 100 125 150 TJ, JUNCTION TEMPERATURE (C) FIGURE 8, ON-RESISTANCE vs. TEMPERATURE
-25 0 25 50 75 100 125 150 TC, CASE TEMPERATURE (C) FIGURE 9, THRESHOLD VOLTAGE vs TEMPERATURE
0.6
-50
050-5598 Rev B
1-2005
APT8030JVFR
200 100
ID, DRAIN CURRENT (AMPERES)
30,000 10S
OPERATION HERE LIMITED BY RDS (ON)
50
100S
C, CAPACITANCE (pF)
10,000 5,000
Ciss
10 5
1mS
Coss 1,000 500 Crss
10mS 1 .5 TC =+25C TJ =+150C SINGLE PULSE 100mS DC
.1
1 5 10 50 100 800 VDS, DRAIN-TO-SOURCE VOLTAGE (VOLTS) FIGURE 10, MAXIMUM SAFE OPERATING AREA
I = I [Cont.]
D D
.01 .1 1 10 50 VDS, DRAIN-TO-SOURCE VOLTAGE (VOLTS) FIGURE 11, TYPICAL CAPACITANCE vs DRAIN-TO-SOURCE VOLTAGE
IDR, REVERSE DRAIN CURRENT (AMPERES)
100
VGS, GATE-TO-SOURCE VOLTAGE (VOLTS)
20
200 100 50
16
VDS=100V VDS=250V VDS=400V
TJ =+150C
TJ =+25C
12
8
10 5
4
100 200 300 400 500 600 Qg, TOTAL GATE CHARGE (nC) FIGURE 12, GATE CHARGES vs GATE-TO-SOURCE VOLTAGE
0
0
0 0.4 0.8 1.2 1.6 2.0 VSD, SOURCE-TO-DRAIN VOLTAGE (VOLTS) FIGURE 13, TYPICAL SOURCE-DRAIN DIODE FORWARD VOLTAGE
1
SOT-227 (ISOTOP(R)) Package Outline
31.5 (1.240) 31.7 (1.248) 7.8 (.307) 8.2 (.322) W=4.1 (.161) W=4.3 (.169) H=4.8 (.187) H=4.9 (.193) (4 places) 11.8 (.463) 12.2 (.480) 8.9 (.350) 9.6 (.378) Hex Nut M4 (4 places)
r = 4.0 (.157) (2 places)
4.0 (.157) 4.2 (.165) (2 places)
25.2 (0.992) 0.75 (.030) 12.6 (.496) 25.4 (1.000) 0.85 (.033) 12.8 (.504)
3.3 (.129) 3.6 (.143) 14.9 (.587) 15.1 (.594) 30.1 (1.185) 30.3 (1.193)
1-2005
1.95 (.077) 2.14 (.084)
* Source
Drain
* Source terminals are shorted internally. Current handling capability is equal for either Source terminal.
38.0 (1.496) 38.2 (1.504)
* Source Dimensions in Millimeters and (Inches)
Gate
050-5598 Rev B
"UL Recognized" File No. E145592
ISOTOP(R) is a Registered Trademark of SGS Thomson. APT's products are covered by one or more of U.S.patents 4,895,810 5,045,903 5,089,434 5,182,234 5,019,522 5,262,336 6,503,786 5,256,583 4,748,103 5,283,202 5,231,474 5,434,095 5,528,058 and foreign patents. US and Foreign patents pending. All Rights Reserved.

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