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APT94N60L2C3
600V 94A 0.035
Super Junction MOSFET
C OLMOS O
Power Semiconductors
TO-264 Max
* Ultra low RDS(ON) * Low Miller Capacitance * Ultra Low Gate Charge, Qg * Avalanche Energy Rated * TO-264 Max Package
MAXIMUM RATINGS
Symbol VDSS ID IDM VGS VGSM PD TJ,TSTG TL
dv/ dt
D G S
All Ratings: TC = 25C unless otherwise specified.
APT94N60L2C3 UNIT Volts Amps
Parameter Drain-Source Voltage Continuous Drain Current @ TC = 25C Pulsed Drain Current
1
600 94 282 20 30 833 6.67 -55 to 150 300 50 20 1
4
Gate-Source Voltage Continuous Gate-Source Voltage Transient Total Power Dissipation @ TC = 25C Linear Derating Factor Operating and Storage Junction Temperature Range Lead Temperature: 0.063" from Case for 10 Sec. Drain-Source Voltage slope (VDS = 480V, ID = 94A, TJ = 125C) Repetitive Avalanche Current Repetitive Avalanche Energy
7 7
Volts Watts W/C C V/ns Amps mJ
IAR EAR EAS
Single Pulse Avalanche Energy
1800
STATIC ELECTRICAL CHARACTERISTICS
Symbol BVDSS RDS(on) IDSS IGSS VGS(th) Characteristic / Test Conditions Drain-Source Breakdown Voltage (VGS = 0V, ID = 500A) Drain-Source On-State Resistance
2
MIN
TYP
MAX
UNIT Volts
600 0.03 1.0 0.035 50 500 200 2.10 3 3.9
(VGS = 10V, 60A)
Ohms A nA Volts
Zero Gate Voltage Drain Current (VDS = 600V, VGS = 0V) Zero Gate Voltage Drain Current (VDS = 600V, VGS = 0V, TJ = 150C) Gate-Source Leakage Current (VGS = 20V, VDS = 0V) Gate Threshold Voltage (VDS = VGS, ID = 5.4mA)
CAUTION: These Devices are Sensitive to Electrostatic Discharge. Proper Handling Procedures Should Be Followed.
APT Website - http://www.advancedpower.com
"COOLMOS comprise a new family of transistors developed by Infineon Technologies AG. "COOLMOS" is a trademark of Infineon Technologies AG"
TM
050-7148 Rev C
6-2004
DYNAMIC CHARACTERISTICS
Symbol C iss Coss Crss Qg Qgs Qgd td(on) tr td(off) tf Eon Eoff Eon Eoff Characteristic Input Capacitance Output Capacitance Reverse Transfer Capacitance Total Gate Charge
3
APT94N60L2C3
Test Conditions
VGS = 0V VDS = 25V f = 1 MHz VGS = 10V VDD = 300V ID = 94A @ 25C RESISTIVE SWITCHING VGS = 13V VDD = 380V ID = 94A @ 125C RG = 0.9 6 INDUCTIVE SWITCHING @ 25C VDD = 400V, VGS = 15V ID = 94A, RG = 5 6 INDUCTIVE SWITCHING @ 125C VDD = 400V VGS = 15V ID = 94A, RG = 5
MIN
TYP
MAX
UNIT
13600 4400 290 505 48 240 18 27 110 8 2040 3515 2920 3970
MIN TYP MAX UNIT Amps Volts ns C V/ns pF
640
nC
Gate-Source Charge Gate-Drain ("Miller ") Charge Turn-on Delay Time Rise Time Turn-off Delay Time Fall Time Turn-on Switching Energy Turn-off Switching Energy Turn-on Switching Energy Turn-off Switching Energy
165 12
ns
J
SOURCE-DRAIN DIODE RATINGS AND CHARACTERISTICS
Symbol IS ISM VSD t rr
rr dv/ dt
Characteristic / Test Conditions Continuous Source Current (Body Diode) Pulsed Source Current Diode Forward Voltage
1 2
94 282 1 861 46 6
MIN TYP MAX
(Body Diode) (VGS = 0V, IS = -94A)
1.2
Reverse Recovery Time (IS = -94A, dl S/dt = 100A/s, VR = 350V) Reverse Recovery Charge (IS = -94A, dl S /dt = 100A/s, VR = 350V) Peak Diode Recovery
dv/ dt 5
Q
THERMAL CHARACTERISTICS
Symbol RJC RJA Characteristic Junction to Case Junction to Ambient UNIT C/W
0.15 62
1 Repetitive Rating: Pulse width limited by maximum junction temperature 2 Pulse Test: Pulse width < 380 s, Duty Cycle < 2% 3 See MIL-STD-750 Method 3471
4 Starting Tj = +25C, L = 36.0mH, RG = 25, Peak IL = 10A 5 dv/dt numbers reflect the limitations of the test circuit rather than the device itself. IS -ID94A di/dt 700A/s VR VDSS TJ 150C 6 Eon includes diode reverse recovery. See figures 18, 20. 7 Repetitve avalanche causes additional power losses that can be calculated as PAV=EAR*f
APT Reserves the right to change, without notice, the specifications and information contained herein. 0.16
, THERMAL IMPEDANCE (C/W)
0.14 0.12
0.9
0.7 0.10 0.08 0.06 0.3 0.04 0.02 0 10-5 0.1 0.05 10-4 SINGLE PULSE 0.5 Note:
PDM t1 t2 Duty Factor D = t1/t2 Peak TJ = PDM x ZJC + TC
6-2004
050-7148 Rev C
Z
JC
10-3 10-2 10-1 RECTANGULAR PULSE DURATION (SECONDS) FIGURE 1, MAXIMUM EFFECTIVE TRANSIENT THERMAL IMPEDANCE, JUNCTION-TO-CASE vs PULSE DURATION
1.0
Typical Performance Curves
200 180
ID, DRAIN CURRENT (AMPERES)
APT94N60L2C3
VGS =15 &10V 6V & 6.5V 5.5V
160 140 120 100 80 60 40 20 0
RC MODEL Junction temp. (C) 0.0618 Power (watts) 0.0885 Case temperature. (C) 0.436F 0.0230F
5V
4.5V 4V
FIGURE 2, TRANSIENT THERMAL IMPEDANCE MODEL
RDS(ON), DRAIN-TO-SOURCE ON RESISTANCE
0 5 10 15 20 VDS, DRAIN-TO-SOURCE VOLTAGE (VOLTS) FIGURE 3, LOW VOLTAGE OUTPUT CHARACTERISTICS 1.40 1.30 1.20 1.10 1.00 VGS=20V 0.90 0.80
NORMALIZED TO = 10V @ 47A V
GS
200 180
ID, DRAIN CURRENT (AMPERES)
VDS> ID (ON) x RDS (ON)MAX. 250 SEC. PULSE TEST @ <0.5 % DUTY CYCLE
TJ = -55C
160 140 120 100 80 60 40 20 0 TJ = +125C 0 1 2 3 4 5 6 VGS, GATE-TO-SOURCE VOLTAGE (VOLTS) FIGURE 4, TRANSFER CHARACTERISTICS TJ = +25C
VGS=10V
0
100
BVDSS, DRAIN-TO-SOURCE BREAKDOWN VOLTAGE (NORMALIZED)
1.15 1.10 1.05 1.00 0.95 0.90 0.85
40 60 80 100 120 140 160 180 ID, DRAIN CURRENT (AMPERES) FIGURE 5, RDS(ON) vs DRAIN CURRENT
20
ID, DRAIN CURRENT (AMPERES)
80
60
40
20
RDS(ON), DRAIN-TO-SOURCE ON RESISTANCE (NORMALIZED)
50 75 100 125 150 TC, CASE TEMPERATURE (C) FIGURE 6, MAXIMUM DRAIN CURRENT vs CASE TEMPERATURE 3
I V
D
0 25
-50 -25 0 25 50 75 100 125 150 TJ, JUNCTION TEMPERATURE (C) FIGURE 7, BREAKDOWN VOLTAGE vs TEMPERATURE 1.2 1.1 1.0 0.9 0.8 0.7 0.6 -50
= 47A = 10V
2.0 1.5 1.0 0.5 0 -50
VGS(TH), THRESHOLD VOLTAGE (NORMALIZED)
2.5
GS
-25 0 25 50 75 100 125 150 TJ, JUNCTION TEMPERATURE (C) FIGURE 8, ON-RESISTANCE vs. TEMPERATURE
-25 0 25 50 75 100 125 150 TC, CASE TEMPERATURE (C) FIGURE 9, THRESHOLD VOLTAGE vs TEMPERATURE
050-7148 Rev C
6-2004
Typical Performance Curves
282
OPERATION HERE LIMITED BY RDS (ON)
60,000
APT94N60L2C3
Ciss
ID, DRAIN CURRENT (AMPERES)
100 50 100S
C, CAPACITANCE (pF)
10,000 Coss 1,000
10 5 TC =+25C TJ =+150C SINGLE PULSE 1mS 10mS
100 Crss 10
VGS, GATE-TO-SOURCE VOLTAGE (VOLTS)
I
D
= 94A
IDR, REVERSE DRAIN CURRENT (AMPERES)
1 10 100 600 VDS, DRAIN-TO-SOURCE VOLTAGE (VOLTS) FIGURE 10, MAXIMUM SAFE OPERATING AREA 16
1
0 10 20 30 40 50 VDS, DRAIN-TO-SOURCE VOLTAGE (VOLTS) FIGURE 11, CAPACITANCE vs DRAIN-TO-SOURCE VOLTAGE 200 100 TJ =+150C TJ =+25C 10
12 VDS= 120V 8 VDS= 300V VDS= 480V
4
100 200 300 400 500 600 700 800 Qg, TOTAL GATE CHARGE (nC) FIGURE 12, GATE CHARGES vs GATE-TO-SOURCE VOLTAGE 600 500 td(off)
V = 400V
0 0
0.3 0.5 0.7 0.9 1.1 1.3 1.5 VSD, SOURCE-TO-DRAIN VOLTAGE (VOLTS) FIGURE 13, SOURCE-DRAIN DIODE FORWARD VOLTAGE 250
V
DD G
1
= 400V
R
= 5
200
T = 125C
J
L = 100H
tf
td(on) and td(off) (ns)
400 300 200 100
DD G
R
= 5
T = 125C
J
L = 100H
tr and tf (ns)
150
100 tr 50
td(on) 0 10 70 90 110 130 150 ID (A) FIGURE 14, DELAY TIMES vs CURRENT
DD G
30
50
70 90 110 130 150 ID (A) FIGURE 15, RISE AND FALL TIMES vs CURRENT 16000 14000
SWITCHING ENERGY (J)
V I
DD
0 10
30
50
8000 7000
SWITCHING ENERGY (J)
V
= 400V
= 400V
R
= 5
T = 125C
J
D J
= 94A
T = 125C L = 100H E ON includes diode reverse recovery.
6000 5000 4000 3000 2000 1000
L = 100H E ON includes diode reverse recovery.
12000 10000 8000 6000 4000 2000
Eoff
Eoff
6-2004
Eon
Eon
050-7148 Rev C
70 90 110 130 150 ID (A) FIGURE 16, SWITCHING ENERGY vs CURRENT
0 10
30
50
10 15 20 25 30 35 40 45 50 RG, GATE RESISTANCE (Ohms) FIGURE 17, SWITCHING ENERGY VS. GATE RESISTANCE
0
0
5
Typical Performance Curves
APT94N60L2C3
10% td(on) tr 90% 5% 10%
Switching Energy
Gate Voltage
T TJ = 125 C
90%
Gate Voltage
TJ = 125 C
td(off)
Collector Current
tf
90%
Collector Current
5%
Collector Voltage
Collector Voltage
0 10%
Switching Energy
Figure 18, Turn-on Switching Waveforms and Definitions
Figure 19, Turn-off Switching Waveforms and Definitions
APT30DF60
V DD
IC
V CE
G D.U.T.
Figure 20, Inductive Switching Test Circuit
TO-264 MAXTM(L2) Package Outline
4.60 (.181) 5.21 (.205) 1.80 (.071) 2.01 (.079) 19.51 (.768) 20.50 (.807)
5.79 (.228) 6.20 (.244)
Drain
25.48 (1.003) 26.49 (1.043)
2.29 (.090) 2.69 (.106) 19.81 (.780) 21.39 (.842)
2.29 (.090) 2.69 (.106)
Gate Drain
6-2004 050-7148 Rev C
Source
0.48 (.019) 0.84 (.033) 2.59 (.102) 3.00 (.118) 0.76 (.030) 1.30 (.051) 2.79 (.110) 3.18 (.125) 5.45 (.215) BSC 2-Plcs.
Dimensions in Millimeters and (Inches)
APT's products are covered by one or more of U.S.patents 4,895,810 5,045,903 5,089,434 5,182,234 5,019,522 5,262,336 6,503,786 5,256,583 4,748,103 5,283,202 5,231,474 5,434,095 5,528,058 and foreign patents. US and Foreign patents pending. All Rights Reserved.

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