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APTC80AM75SCG
Phase leg Series & SiC parallel diodes Super Junction MOSFET Power Module
VBUS
VDSS = 800V RDSon = 75m max @ Tj = 25C ID = 56A @ Tc = 25C
Application * Motor control * Switched Mode Power Supplies * Uninterruptible Power Supplies Features * Ultra low RDSon Low Miller capacitance Ultra low gate charge Avalanche energy rated
Q1 G1 OUT S1
Q2 G2 0/VBUS
S2
*
Parallel SiC Schottky Diode - Zero reverse recovery - Zero forward recovery - Temperature Independent switching behavior - Positive temperature coefficient on VF Kelvin source for easy drive Very low stray inductance - Symmetrical design - M5 power connectors High level of integration
* *
G1 S1 VBUS 0/VBUS OUT
*
S2 G2
Benefits * Outstanding performance at high frequency operation * Direct mounting to heatsink (isolated package) * Low junction to case thermal resistance * Low profile * RoHS Compliant Parameter Drain - Source Breakdown Voltage Continuous Drain Current Pulsed Drain current Gate - Source Voltage Drain - Source ON Resistance Maximum Power Dissipation Avalanche current (repetitive and non repetitive) Repetitive Avalanche Energy Single Pulse Avalanche Energy Tc = 25C Tc = 80C Max ratings 800 56 43 232 30 75 568 17 0.5 670 Unit V A V m W A mJ
July, 2006 1-7 APTC80AM75SCG - Rev 2
Absolute maximum ratings
Symbol VDSS ID IDM VGS RDSon PD IAR EAR EAS
Tc = 25C
These Devices are sensitive to Electrostatic Discharge. Proper Handing Procedures Should Be Followed. See application note APT0502 on www.microsemi.com
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APTC80AM75SCG
All ratings @ Tj = 25C unless otherwise specified Electrical Characteristics
Symbol IDSS RDS(on) VGS(th) IGSS Characteristic Zero Gate Voltage Drain Current Drain - Source on Resistance Gate Threshold Voltage Gate - Source Leakage Current Test Conditions
VGS = 0V,VDS = 800V VGS = 0V,VDS = 800V
Min Tj = 25C Tj = 125C 2.1
Typ
VGS = 10V, ID = 28A VGS = VDS, ID = 4mA VGS = 20 V, VDS = 0V
3
Max 100 1000 75 3.9 200
Unit A m V nA
Dynamic Characteristics
Symbol Ciss Coss Crss Qg Qgs Qgd Td(on) Tr Td(off) Tf Eon Eoff Eon Eoff
Characteristic Input Capacitance Output Capacitance Reverse Transfer Capacitance Total gate Charge Gate - Source Charge Gate - Drain Charge Turn-on Delay Time Rise Time Turn-off Delay Time Fall Time Turn-on Switching Energy Turn-off Switching Energy Turn-on Switching Energy Turn-off Switching Energy
Test Conditions VGS = 0V VDS = 25V f = 1MHz VGS = 10V VBus = 400V ID = 56A Inductive switching @ 125C VGS = 15V VBus = 533V ID = 56A R G = 1.2 Inductive switching @ 25C VGS = 15V, VBus = 533V ID = 56A, R G = 1.2 Inductive switching @ 125C VGS = 15V, VBus = 533V ID = 56A, R G = 1.2
Min
Typ 9015 4183 215 364 48 184 10 13 83 35 583 556 1020 684
Max
Unit pF
nC
ns
J J
Series diode ratings and characteristics
Symbol Characteristic VRRM Maximum Peak Repetitive Reverse Voltage IRM IF VF Maximum Reverse Leakage Current DC Forward Current Diode Forward Voltage
Test Conditions VR=200V IF = 60A IF = 120A IF = 60A IF = 60A VR = 133V di/dt = 400A/s Tj = 25C Tj = 125C Tc = 85C
Min 200
Typ
Max 350 600
Unit V A A
Tj = 125C Tj = 25C Tj = 125C Tj = 25C Tj = 125C
60 1.1 1.4 0.9 24 48 66 300
1.15 V
July, 2006 2-7 APTC80AM75SCG - Rev 2
trr Qrr
Reverse Recovery Time Reverse Recovery Charge
ns nC
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APTC80AM75SCG
Parallel diode ratings and characteristics
Symbol Characteristic VRRM Maximum Peak Repetitive Reverse Voltage IRM IF VF QC Q Maximum Reverse Leakage Current DC Forward Current Diode Forward Voltage Total Capacitive Charge Total Capacitance IF = 30A Test Conditions VR=1200V Tj = 25C Tj = 175C Tc = 125C Tj = 25C Tj = 175C Min 1200 Typ 300 600 30 1.6 2.6 84 270 198 Min Transistor Series diode Parallel diode 2500 -40 -40 -40 3 2 Typ Max 0.22 0.65 0.45 150 125 100 5 3.5 280 Max 1200 6000 1.8 3.0 Unit V A A V nC pF
IF = 30A, VR = 600V di/dt =1600A/s f = 1MHz, VR = 200V f = 1MHz, VR = 400V
Thermal and package characteristics
Symbol Characteristic RthJC VISOL TJ TSTG TC Torque Wt Junction to Case Thermal Resistance
Unit C/W V C N.m g
RMS Isolation Voltage, any terminal to case t =1 min, I isol<1mA, 50/60Hz
Operating junction temperature range Storage Temperature Range Operating Case Temperature Mounting torque Package Weight To heatsink For terminals M6 M5
SP6 Package outline (dimensions in mm)
See application note APT0601 - Mounting Instructions for SP6 Power Modules on www.microsemi.com
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3-7
APTC80AM75SCG - Rev 2
July, 2006
APTC80AM75SCG
Typical CoolMOS Performance Curve
Maximum Effective Transient Thermal Impedance, Junction to Case vs Pulse Duration 0.25 Thermal Impedance (C/W) 0.2 0.15 0.5 0.1 0.05 0.3 0.1 0.05 0.0001 0.001 Single Pulse 0.9 0.7
0 0.00001
0.01
0.1
1
10
rectangular Pulse Duration (Seconds) Low Voltage Output Characteristics 160 140 ID, Drain Current (A) 120 100 80 60 40 20 0 0 5 10 15 20 25 VDS, Drain to Source Voltage (V) RDS(on) vs Drain Current 1.4 1.3 1.2 1.1 1 0.9 0.8 0 20 40 60 80 100 I D, Drain Current (A) 120
VGS=20V
Transfert Characteristics 200
V DS > ID(on)xRDS(on)MAX 250s pulse test @ < 0.5 duty cycle
VGS =15&10V
ID, Drain Current (A)
6.5V 6V 5.5V 5V 4.5V 4V
150
TJ =-55C
100
TJ =125C
50
TJ =25C T J=125C T J=-55C
0 0 1 2 3 4 5 6 7 8 VGS, Gate to Source Voltage (V)
RDS(on) Drain to Source ON Resistance
DC Drain Current vs Case Temperature 60 I D, DC Drain Current (A)
Normalized to VGS=10V @ 28A
VGS=10V
50 40 30 20 10 0 25 50 75 100 125 150
July, 2006 4-7 APTC80AM75SCG - Rev 2
TC, Case Temperature (C)
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APTC80AM75SCG
RDS(on), Drain to Source ON resistance (Normalized) Breakdown Voltage vs Temperature BVDSS, Drain to Source Breakdown Voltage (Normalized) 1.15 1.10 1.05 1.00 0.95 0.90 -50 0 50 100 150 TJ, Junction Temperature (C) Threshold Voltage vs Temperature 1.2 VGS(TH), Threshold Voltage (Normalized) I D, Drain Current (A) 1.1 1.0 0.9 0.8 0.7 -50 0 50 100 150 TC, Case Temperature (C) Capacitance vs Drain to Source Voltage 100000 C, Capacitance (pF) Ciss Coss Crss 100 1000
limited by RDSon
ON resistance vs Temperature 3.0 2.5 2.0 1.5 1.0 0.5 0.0 -50 0 50 100 150 TJ, Junction Temperature (C) Maximum Safe Operating Area
V GS=10V ID= 28A
100
100s
10 Single pulse TJ =150C TC=25C
1ms 100ms
1
0 1 10 100 1000 VDS, Drain to Source Voltage (V)
VGS, Gate to Source Voltage (V)
Gate Charge vs Gate to Source Voltage 16 14 12 10 8 6 4 2 0 0 50 100 150 200 250 300 350 400 Gate Charge (nC)
July, 2006
VDS=640V ID=56A T J=25C V DS =160V VDS=400V
10000
1000
10 0 10 20 30 40 50 VDS, Drain to Source Voltage (V)
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5-7
APTC80AM75SCG - Rev 2
APTC80AM75SCG
Delay Times vs Current Rise and Fall times vs Current
100
t d(off) td(on) and td(off) (ns)
50 40
tr and tf (ns)
V DS=533V RG=1.2 T J=125C L=100H
80 60 40 20 0 20 30 40 50 60 70 I D, Drain Current (A) 80 90
tf 30 20 tr 10 0 20 30
VDS=533V RG=1.2 T J=125C L=100H
td(on)
40 50 60 70 I D, Drain Current (A)
80
90
Switching Energy vs Current
Switching Energy vs Gate Resistance
2 1.6 1.2 0.8 0.4 0 20
Switching Energy (mJ)
Eon and Eoff (mJ)
VDS=533V RG=1.2 TJ=125C L=100H
3.5 Eon 3 2.5 2 1.5 1 0.5
V DS=533V ID=56A T J=125C L=100H
Eoff
Eoff
Eon Eoff 0 2.5 5 7.5 Gate Resistance (Ohms) 10
30
40 50 60 70 ID, Drain Current (A)
80
90
Operating Frequency vs Drain Current
350
Frequency (kHz)
IDR , Reverse Drain Current (A)
400
Source to Drain Diode Forward Voltage 1000
300 250 200 150 100 50 0
V DS=533V D=50% R G=1.2 T J=125C T C=75C
ZCS
ZVS
100
TJ =150C
10
TJ=25C
Hars Switching
10 15 20 25 30 35 40 45 50 55 ID, Drain Current (A)
1 0.2
0.6 1 1.4 1.8 VSD, Source to Drain Voltage (V)
July, 2006
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6-7
APTC80AM75SCG - Rev 2
APTC80AM75SCG
Typical SiC Diode Performance Curve
Maximum Effective Transient Thermal Impedance, Junction to Case vs Pulse Duration 0.5 Thermal Impedance (C/W) 0.9 0.4 0.7 0.3 0.2 0.1 0.5 0.3 0.1 0.05 0 0.00001 0.0001 0.001 Single Pulse
0.01
0.1
1
10
Rectangular Pulse Duration (Seconds) Forward Characteristics
TJ=25C
Reverse Characteristics
60
I F Forward Current (A)
1200
IR Reverse Current (A)
50 40 30 20 10 0 0 0.5 1 1.5 2 2.5 3 3.5
VF Forward Voltage (V) Capacitance vs.Reverse Voltage
T J=125C TJ=175C TJ=75C
900 600 300 0 400
T J=75C T J=125C TJ=175C TJ=25C
600
800 1000 1200 1400 1600 VR Reverse Voltage (V)
2400 C, Capacitance (pF) 2000 1600 1200 800 400 0 1
July, 2006 APTC80AM75SCG - Rev 2
10 100 VR Reverse Voltage
1000
"COOLMOSTM comprise a new family of transistors developed by Infineon Technologies AG. "COOLMOS" is a trademark of Infineon Technologies AG". Microsemi reserves the right to change, without notice, the specifications and information contained herein
Microsemi's products are covered by one or more of U.S patents 4,895,810 5,045,903 5,089,434 5,182,234 5,019,522 5,262,336 6,503,786 5,256,583 4,748,103 5,283,202 5,231,474 5,434,095 5,528,058 and foreign patents. U.S and Foreign patents pending. All Rights Reserved.
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