View APTC80H29SCT_1212066.PDF datasheet online --- IC-ON-LINE

Datasheet File OCR Text:

APTC80H29SCT
Full - Bridge Series & SiC parallel diodes Super Junction MOSFET Power Module
VBUS CR1A CR3A
VDSS = 800V RDSon = 290mW max @ Tj = 25C ID = 15A @ Tc = 25C
Application * Motor control * Switched Mode Power Supplies * Uninterruptible Power Supplies
Q1
CR1B
CR3B
Q3
Features *
G3 S3
G1 S1 CR2A OUT1 OUT2 CR4A
Q2
CR2B
CR4B
Q4
*
Ultra low RDSon Low Miller capacitance Ultra low gate charge Avalanche energy rated
G2 S2 NTC1 0/VBUS NTC2
G4 S4
Parallel SiC Schottky Diode - Zero reverse recovery - Zero forward recovery - Temperature Independent switching behavior - Positive temperature coefficient on VF Kelvin source for easy drive Very low stray inductance - Symmetrical design - Lead frames for power connections Internal thermistor for temperature monitoring High level of integration
* * * *
G3 S3
G4 S4
OUT2
VBUS
0/VBUS
OUT1
S1 G1
S2 G2
NTC2 NTC1
Absolute maximum ratings
Symbol VDSS ID IDM VGS RDSon PD IAR EAR EAS Parameter Drain - Source Breakdown Voltage Continuous Drain Current
Benefits * Outstanding performance at high frequency operation * Direct mounting to heatsink (isolated package) * Low junction to case thermal resistance * Solderable terminals both for power and signal for easy PCB mounting * Low profile Max ratings 800 15 11 60 30 290 156 24 0.5 670 Unit V A V mW W A mJ
Tc = 25C Tc = 80C
Tc = 25C
These Devices are sensitive to Electrostatic Discharge. Proper Handing Procedures Should Be Followed.
APT website - http://www.advancedpower.com
1-7
APTC80H29SCT - Rev 1 May, 2004
Pulsed Drain current Gate - Source Voltage Drain - Source ON Resistance Maximum Power Dissipation Avalanche current (repetitive and non repetitive) Repetitive Avalanche Energy Single Pulse Avalanche Energy
APTC80H29SCT
All ratings @ Tj = 25C unless otherwise specified Electrical Characteristics
Symbol Characteristic BVDSS Drain - Source Breakdown Voltage IDSS RDS(on) VGS(th) IGSS Zero Gate Voltage Drain Current Drain - Source on Resistance Gate Threshold Voltage Gate - Source Leakage Current Test Conditions VGS = 0V, ID = 250A
VGS = 0V,VDS = 800V VGS = 0V,VDS = 800V
Min 800 Tj = 25C Tj = 125C 2.1
Typ
Max 25 250 290 3.9 100
Unit V A mW V nA
VGS = 10V, ID = 7.5A VGS = VDS, ID = 1mA VGS = 20 V, VDS = 0V
3
Dynamic Characteristics
Symbol Ciss Coss Crss Qg Qgs Qgd Td(on) Tr Td(off) Tf Eon Eoff Eon Eoff Characteristic Input Capacitance Output Capacitance Reverse Transfer Capacitance Total gate Charge Gate - Source Charge Gate - Drain Charge Turn-on Delay Time Rise Time Turn-off Delay Time Fall Time Turn-on Switching Energy Turn-off Switching Energy u Turn-on Switching Energy Turn-off Switching Energy u Test Conditions VGS = 0V VDS = 25V f = 1MHz VGS = 10V VBus = 400V ID = 15A Inductive switching @125C VGS = 15V VBus = 533V ID = 15A RG = 5W Inductive switching @ 25C VGS = 15V, VBus = 533V ID = 15A, RG = 5 Inductive switching @ 125C VGS = 15V, VBus = 533V ID = 15A, RG = 5 Min Typ 2254 1046 54 91 12 46 10 13 83 35 146 139 255 171 J J Max Unit pF
nC
ns
Series diode ratings and characteristics
Symbol Characteristic Maximum Average Forward Current IF(AV) VF Diode Forward Voltage Test Conditions 50% duty cycle IF = 30A IF = 60A IF = 30A IF = 30A VR = 133V di/dt = 200A/s IF = 30A VR = 133V di/dt = 200A/s Min Tc = 85C Typ 30 1.1 1.4 0.9 24 48 33 150 Max 1.15 V Unit A
Tj = 125C Tj = 25C Tj = 125C Tj = 25C Tj = 125C
Qrr
Reverse Recovery Charge
nC
u In accordance with JEDEC standard JESD24-1.
APT website - http://www.advancedpower.com
2-7
APTC80H29SCT - Rev 1 May, 2004
trr
Reverse Recovery Time
ns
APTC80H29SCT
Parallel diode ratings and characteristics
Symbol Characteristic Maximum Average Forward Current IF(AV) VF QC Q Diode Forward Voltage Total Capacitive Charge Total Capacitance Test Conditions
50% duty cycle
Min Tc = 125C Tj = 25C Tj = 175C
IF = 5A
Typ 5 1.6 2.6 14 45 33
Max 1.8 3.0
Unit A V nC pF
IF = 5A, VR = 600V di/dt =500A/s f = 1MHz, VR = 200V f = 1MHz, VR = 400V Min Transistor Series diode 2500 -40 -40 -40
Thermal and package characteristics
Symbol Characteristic RthJC VISOL TJ TSTG TC Torque Wt Junction to Case Typ Max 0.8 1.2 2.5 150 125 100 4.7 160 Typ 68 4080 Max Unit
C/W
Parallel diode RMS Isolation Voltage, any terminal to case t =1 min, I isol<1mA, 50/60Hz
V C N.m g Unit kW K
Operating junction temperature range Storage Temperature Range Operating Case Temperature Mounting torque Package Weight
To Heatsink
M5
Temperature sensor NTC
Symbol Characteristic R25 Resistance @ 25C B 25/85 T25 = 298.16 K
RT = R 25 e ae1 1 ou T: Thermistor temperature exp e B25 / 85 c c T - T /u RT: Thermistor value at T / e 25 ou e
Min
Package outline
APT website - http://www.advancedpower.com
3-7
APTC80H29SCT - Rev 1 May, 2004
APTC80H29SCT
Typical CoolMOS Performance Curve
Maximum Effective Transient Thermal Impedance, Junction to Case vs Pulse Duration 0.9 Thermal Impedance (C/W) 0.8 0.7 0.6 0.5 0.4 0.3 0.2 0.1 0 0.00001 0.1 0.05 0.0001 0.9 0.7 0.5 0.3 Single Pulse
0.001
0.01
0.1
1
rectangular Pulse Duration (Seconds) Low Voltage Output Characteristics 40 35 ID, Drain Current (A) 30 25 20 15 10 5 0 0 5 10 15 20 25 VDS, Drain to Source Voltage (V) RDS(on) vs Drain Current 1.4 1.3 1.2 1.1 1 0.9 0.8 0 5 10 15 20 ID, Drain Current (A) 25 30
VGS=20V VGS=10V
Transfert Characteristics 50
VDS > ID(on)xRDS(on)MAX 250s pulse test @ < 0.5 duty cycle
VGS=15&10V
6V 5.5V 5V 4.5V 4V
ID, Drain Current (A)
6.5V
40 30 20 10 0 0
TJ=25C TJ=125C T J=-55C
1 2 3 4 5 6 7 VGS, Gate to Source Voltage (V)
8
RDS(on) Drain to Source ON Resistance
DC Drain Current vs Case Temperature 16 ID, DC Drain Current (A) 14 12 10 8 6 4 2 0 25 50 75 100 125 150 TC, Case Temperature (C)
APTC80H29SCT - Rev 1 May, 2004
Normalized to VGS=10V @ 7.5A
APT website - http://www.advancedpower.com
4-7
APTC80H29SCT
RDS(on), Drain to Source ON resistance (Normalized) Breakdown Voltage vs Temperature BVDSS, Drain to Source Breakdown Voltage (Normalized) 1.15 1.10 1.05 1.00 0.95 0.90 -50 0 50 100 150 TJ, Junction Temperature (C) Threshold Voltage vs Temperature 1.2 VGS(TH), Threshold Voltage (Normalized) ID, Drain Current (A) 1.1 1.0 0.9 0.8 0.7 -50 0 50 100 150 TC, Case Temperature (C) Capacitance vs Drain to Source Voltage 10000 C, Capacitance (pF) Ciss 1000 Coss 100 Crss 10 0 10 20 30 40 50 VDS, Drain to Source Voltage (V) 100
limited by RDSon
ON resistance vs Temperature 3.0 2.5 2.0 1.5 1.0 0.5 0.0 -50 0 50 100 150 TJ, Junction Temperature (C) Maximum Safe Operating Area
VGS=10V ID= 7.5A
100s
10 1ms 1 Single pulse TJ=150C 0 1 10 100 1000 VDS, Drain to Source Voltage (V) 10ms 100ms
VGS, Gate to Source Voltage (V)
Gate Charge vs Gate to Source Voltage 16 14 12 10 8 6 4 2 0 0 20 40 60 80 100 Gate Charge (nC)
VDS=640V ID=15A TJ=25C VDS=160V VDS=400V
APT website - http://www.advancedpower.com
5-7
APTC80H29SCT - Rev 1 May, 2004
APTC80H29SCT
Delay Times vs Current Rise and Fall times vs Current 50 tf
100 td(off)
td(on) and td(off) (ns)
80
tr and tf (ns)
40
VDS=533V RG=5 TJ=125C L=100H
60 40 20 0 5
30 20 10 0
VDS=533V RG=5 TJ=125C L=100H
tr
td(on)
10 15 20 ID, Drain Current (A)
Switching Energy vs Current
25
5
10 15 20 ID, Drain Current (A)
25
Switching Energy vs Gate Resistance 1250 Switching Energy (J)
VDS=533V ID=15A TJ=125C L=100H
500 Eon and Eoff (J) 400 300 200 100 0 5
VDS=533V RG=5 TJ=125C L=100H
Eon
1000 750 500 250 0
Eoff
Eoff
Eon
10 15 20 ID, Drain Current (A)
25
0
10 20 30 40 Gate Resistance (Ohms)
50
Operating Frequency vs Drain Current 350 300 Frequency (kHz) 250 200 150 100 50 0 4 6 8 10 12 ID, Drain Current (A) 14
VDS=533V D=50% RG=5 TJ=125C
IDR, Reverse Drain Current (A)
Source to Drain Diode Forward Voltage 1000
100 TJ=150C 10 TJ=25C 1 0.2 0.6 1 1.4 1.8
VSD, Source to Drain Voltage (V)
APT website - http://www.advancedpower.com
6-7
APTC80H29SCT - Rev 1 May, 2004
APTC80H29SCT
Typical SiC Diode Performance Curve
Maximum Effective Transient Thermal Impedance, Junction to Case vs Pulse Duration 3 Thermal Impedance (C/W) 2.5 2 1.5 1 0.5 0 0.00001 0.9 0.7 0.5 0.3 0.1 0.05 0.0001 0.001 0.01 0.1 1 Single Pulse
Rectangular Pulse Duration (Seconds) Forward Characteristics
TJ=25C
Reverse Characteristics 200 IR Reverse Current (A)
10
IF Forward Current (A)
8 6 4 2 0 0 0.5 1 1.5 2 2.5 3 3.5
VF Forward Voltage (V) Capacitance vs.Reverse Voltage
TJ=75C
150
100
TJ=125C TJ=175C
TJ=75C TJ=125C TJ=175C TJ=25C
50
0 400
600
800 1000 1200 1400 1600 VR Reverse Voltage (V)
400 C, Capacitance (pF) 300 200 100 0 1 10 100 VR Reverse Voltage 1000
APTC80H29SCT - Rev 1 May, 2004
"COOLMOSTM comprise a new family of transistors developed by Infineon Technologies AG. "COOLMOS" is a trademark of Infineon Technologies AG". APT reserves the right to change, without notice, the specifications and information contained herein
APT's products are covered by one or more of U.S patents 4,895,810 5,045,903 5,089,434 5,182,234 5,019,522 5,262,336 6,503,786 5,256,583 4,748,103 5,283,202 5,231,474 5,434,095 5,528,058 and foreign patents. U.S and Foreign patents pending. All Rights Reserved.
APT website - http://www.advancedpower.com
7-7

▲Up To Search▲

Price & Availability of APTC80H29SCT

	To Download APTC80H29SCT Datasheet File
If you can't view the Datasheet, Please click here to try to view without PDF Reader .