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APTGF30H60T3G
Full - Bridge NPT IGBT Power Module
13 14
VCES = 600V IC = 30A @ Tc = 80C
Application * Welding converters * Switched Mode Power Supplies * Uninterruptible Power Supplies * Motor control Features * Non Punch Through (NPT) Fast IGBT(R) - Low voltage drop - Low tail current - Switching frequency up to 50 kHz - Soft recovery parallel diodes - Low diode VF - Low leakage current - Avalanche energy rated - RBSOA and SCSOA rated - Symmetrical design * Kelvin emitter for easy drive * Very low stray inductance * High level of integration * Internal thermistor for temperature monitoring Benefits * Outstanding performance at high frequency operation * Direct mounting to heatsink (isolated package) * Low junction to case thermal resistance * Solderable terminals both for power and signal for easy PCB mounting * Low profile * Easy paralleling due to positive TC of VCEsat * Each leg can be easily paralleled to achieve a phase leg of twice the current capability * RoHS compliant Max ratings 600 42 30 100 20 140 60A@500V Unit V A V W
July, 2006 1-6 APTGF30H60T3G - Rev 1
Q1 18 19
CR1
CR3
Q3 11 10
22 23 Q2
7 8 CR4 Q4
26 27
CR2
4 3
29 15
30
31 R1
32 16
28 27 26 25 29 30
23 22
20 19 18 16 15
31 32 2 3 4 7 8 10 11 12
14 13
All multiple inputs and outputs must be shorted together Example: 13/14 ; 29/30 ; 22/23 ...
Absolute maximum ratings
Symbol VCES IC ICM VGE PD RBSOA
Parameter Collector - Emitter Breakdown Voltage Continuous Collector Current Pulsed Collector Current Gate - Emitter Voltage Maximum Power Dissipation TC = 25C TC = 80C TC = 25C TC = 25C Tj = 125C
Reverse Bias Safe Operating Area
These Devices are sensitive to Electrostatic Discharge. Proper Handing Procedures Should Be Followed. See application note APT0502 on www.microsemi.com
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APTGF30H60T3G
All ratings @ Tj = 25C unless otherwise specified Electrical Characteristics
Symbol Characteristic ICES VCE(on) VGE(th) IGES Symbol Cies Coes Cres Qg Qge Qgc Td(on) Tr Td(off) Tf Td(on) Tr Td(off) Tf Eon Eoff Test Conditions Min Zero Gate Voltage Collector Current Collector Emitter on Voltage Gate Threshold Voltage Gate - Emitter Leakage Current Characteristic Input Capacitance Output Capacitance Reverse Transfer Capacitance Total gate Charge Gate - Emitter Charge Gate - Collector Charge Turn-on Delay Time Rise Time Turn-off Delay Time Fall Time Turn-on Delay Time Rise Time Turn-off Delay Time Fall Time Turn-on Switching Energy Turn-off Switching Energy VGE = 0V VCE = 600V Tj = 25C Tj = 125C Tj = 25C VGE =15V IC = 30A Tj = 125C VGE = VCE, IC = 1mA VGE = 20V, VCE = 0V Test Conditions VGE = 0V VCE = 25V f = 1MHz VGE = 15V VBus = 300V IC =30A Inductive Switching (25C) VGE = 15V VBus = 400V IC = 30A R G = 6.8 Inductive Switching (125C) VGE = 15V VBus = 400V IC = 30A R G = 6.8 VGE = 15V Tj = 125C VBus = 400V IC = 30A Tj = 125C R G = 6.8 Typ Max 250 500 2.45 6 400 Typ 1350 193 120 99 10 60 30 12 80 15 32 12 90 21 0.3 mJ 0.8 Max Unit A V V nA Unit pF
1.7 4
2.0 2.2
Dynamic Characteristics
Min
nC
ns
ns
Reverse diode ratings and characteristics
Symbol Characteristic VRRM IRM IF VF
Maximum Peak Repetitive Reverse Voltage
Test Conditions Tj = 25C Tj = 125C Tc = 80C IF = 15A IF = 30A IF = 15A IF = 15A VR = 400V di/dt =200A/s
Min 600
Typ
Max 150 500
Unit V A A
Maximum Reverse Leakage Current DC Forward Current Diode Forward Voltage
VR=600V
trr Qrr
Reverse Recovery Time Reverse Recovery Charge
Tj = 25C Tj = 125C Tj = 25C Tj = 125C
40 150 95 520
ns nC
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APTGF30H60T3G - Rev 1
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Tj = 125C
15 1.6 1.9 1.4
1.8 V
APTGF30H60T3G
Temperature sensor NTC (see application note APT0406 on www.microsemi.com for more information).
Symbol Characteristic R25 Resistance @ 25C B 25/85 T25 = 298.15 K Min Typ 50 3952 Max Unit k K
RT =
R 25
1 1 RT : Thermistor value at T exp B 25 / 85 T - T 25
T: Thermistor temperature
Symbol Characteristic RthJC VISOL TJ TSTG TC Torque Wt
Thermal and package characteristics
Junction to Case Thermal Resistance Operating junction temperature range Storage Temperature Range Operating Case Temperature Mounting torque Package Weight IGBT Diode
Min
Typ
Max 0.9 2.0 150 125 100 4.7 110
Unit C/W V C N.m g
RMS Isolation Voltage, any terminal to case t =1 min, I isol<1mA, 50/60Hz
To heatsink
M4
2500 -40 -40 -40 2.5
SP3 Package outline (dimensions in mm)
1
12
See application note 1901 - Mounting Instructions for SP3 Power Modules on www.microsemi.com
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28
APTGF30H60T3G
Typical Performance Curve
Output characteristics (VGE=15V) Output Characteristics (VGE=10V) 100 Ic, Collector Current (A)
T J=-55C
250s Pulse Test < 0.5% Duty cycle TJ=-55C
120 Ic, Collector Current (A)
250s Pulse Test < 0.5% Duty cycle
90
TJ=25C
75
TJ =25C
60
TJ=125C
50
30
25
TJ =125C
0 0 1 2 3 4
VCE, Collector to Emitter Voltage (V) Transfer Characteristics 100 VGE, Gate to Emitter Voltage (V)
0 0 1 2 3 VCE, Collector to Emitter Voltage (V) Gate Charge
IC = 30A T J = 25C VCE=120V VCE=300V VCE=480V
4
18
250s Pulse Test < 0.5% Duty cycle
Ic, Collector Current (A)
16 14 12 10 8 6 4 2 0 0
75
50
25
T J=25C
TJ=125C T J=-55C
0 0 1 2
34 5 6 7 89 VGE, Gate to Emitter Voltage (V)
10
20
40
60
80
100
120
Gate Charge (nC) VCE, Collector to Emitter Voltage (V) On state Voltage vs Junction Temperature 4 3.5 3 2.5 2 1.5 1 0.5 0 -50 -25 0 25 50 75 100 TJ, Junction Temperature (C) 125
Ic=15A 250s Pulse Test < 0.5% Duty cycle VGE = 15V Ic=30A Ic=60A
VCE, Collector to Emitter Voltage (V)
On state Voltage vs Gate to Emitter Volt. 8 7 6 5 4 3 2 1 0 6 8
Ic=15A Ic=30A TJ = 25C 250s Pulse Test < 0.5% Duty cycle Ic=60A
10 12 14 VGE, Gate to Emitter Voltage (V)
16
Breakdown Voltage vs Junction Temp. Collector to Emitter Breakdown Voltage (Normalized) 1.20 Ic, DC Collector Current (A) 1.10 1.00 0.90 0.80 0.70 -50 -25 0 25 50 75 100 125 TJ, Junction Temperature (C)
DC Collector Current vs Case Temperature
60 50 40
20 10 0 -50 -25 0 25 50 75 100 125 150
TC, Case Temperature (C)
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30
APTGF30H60T3G
Turn-On Delay Time vs Collector Current td(on), Turn-On Delay Time (ns) td(off), Turn-Off Delay Time (ns) 50 125 Turn-Off Delay Time vs Collector Current
40
VGE = 15V
100
V GE=15V, TJ=25C
VGE=15V, TJ=125C
30
Tj = 125C V CE = 400V R G = 6.8
75
20
50
VCE = 400V RG = 6.8
10 0 10 20 30 40 50 60 70 ICE, Collector to Emitter Current (A) Current Rise Time vs Collector Current 50 40 30 20 10 0 0 10 20 30 40 50 60 ICE, Collector to Emitter Current (A) 70
V GE=15V, TJ=125C V CE = 400V RG = 6.8
25 0 10 20 30 40 50 60 70 ICE, Collector to Emitter Current (A) Current Fall Time vs Collector Current
50 40
tf, Fall Time (ns)
tr, Rise Time (ns)
30
TJ = 125C
20
TJ = 25C
10
V CE = 400V, V GE = 15V, RG = 6.8
0 0 10 20 30 40 50 60 ICE, Collector to Emitter Current (A) 70
Eoff, Turn-off Energy Loss (mJ)
Turn-On Energy Loss vs Collector Current 1 Eon, Turn-On Energy Loss (mJ)
V CE = 400V RG = 6.8 TJ=125C, V GE=15V
Turn-Off Energy Loss vs Collector Current
2
0.75 0.5
1.5
V CE = 400V V GE = 15V RG = 6.8 TJ = 125C
1
0.25 0 0 10 20 30 40 50 60 70
ICE, Collector to Emitter Current (A) Switching Energy Losses vs Gate Resistance
0.5
0 0 10 20 30 40 50 60 70
ICE, Collector to Emitter Current (A) Reverse Bias Safe Operating Area
1
Switching Energy Losses (mJ) IC , Collector Current (A)
Eoff, 30A
70 60 50 40 30
0.75
Eon, 30A
0.5
0.25
VCE = 400V VGE = 15V TJ= 125C
10 0 0 100 200 300 400 500 600
0 0 5 10 15 20 Gate Resistance (Ohms) 25
VCE, Collector to Emitter Voltage (V)
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APTGF30H60T3G
Capacitance vs Collector to Emitter Voltage Fmax, Operating Frequency (kHz) 10000 C, Capacitance (pF)
Cies
Operating Frequency vs Collector Current
280 240 200 160 120 80 40 0 0 10 20 30
hard switching ZVS
VCE = 400V D = 50% R G = 6.8 TJ = 125C TC= 75C ZCS
1000
Coes
100
Cres
10 0 10 20 30 40 50 VCE, Collector to Emitter Voltage (V)
40
50
IC, Collector Current (A)
Maximum Effective Transient Thermal Impedance, Junction to Case vs Pulse Duration 1 Thermal Impedance (C/W) 0.9 0.8 0.7 0.6 0.5 0.4 0.3 0.2 0.1 0.9 0.7 0.5 0.3 0.1 0.05 0.0001 0.001 0.01 0.1 Rectangular Pulse Duration (Seconds) 1 10 Single Pulse
0 0.00001
Microsemi reserves the right to change, without notice, the specifications and information contained herein
Microsemi's products are covered by one or more of U.S patents 4,895,810 5,045,903 5,089,434 5,182,234 5,019,522 5,262,336 6,503,786 5,256,583 4,748,103 5,283,202 5,231,474 5,434,095 5,528,058 and foreign patents. U.S and Foreign patents pending. All Rights Reserved.
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