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APTGF350DA60G
Boost chopper NPT IGBT Power Module
VBUS
VCES = 600V IC = 350A @ Tc = 80C
Application * AC and DC motor control * Switched Mode Power Supplies * Power Factor Correction Features * Non Punch Through (NPT) Fast IGBT(R) - Low voltage drop - Low tail current - Switching frequency up to 100 kHz - Soft recovery parallel diodes - Low diode VF - Low leakage current - Avalanche energy rated - RBSOA and SCSOA rated * Kelvin emitter for easy drive * Very low stray inductance - Symmetrical design - M5 power connectors * High level of integration Benefits * Outstanding performance at high frequency operation * Stable temperature behavior * Very rugged * Direct mounting to heatsink (isolated package) * Low junction to case thermal resistance * Easy paralleling due to positive TC of VCEsat * Low profile * RoHS compliant
CR1
OUT
Q2 G2
E2 0/VBUS
VBUS
0/VBUS
OUT
E2 G2
Absolute maximum ratings
Symbol VCES IC ICM VGE PD RBSOA
Parameter Collector - Emitter Breakdown Voltage Continuous Collector Current Pulsed Collector Current Gate - Emitter Voltage Maximum Power Dissipation Tc = 25C Tc = 80C Tc = 25C Tc = 25C Tj = 150C
Max ratings 600 430 350 1225 20 1562 800A @ 600V
Unit V A V W
July, 2006 1-6 APTGF350DA60G - Rev 2
Reverse Bias Safe Operating Area
These Devices are sensitive to Electrostatic Discharge. Proper Handing Procedures Should Be Followed. See application note APT0502 on www.microsemi.com
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APTGF350DA60G
All ratings @ Tj = 25C unless otherwise specified Electrical Characteristics
Symbol Characteristic ICES VCE(sat) VGE(th) IGES Symbol Cies Coes Cres Qg Qge Qgc Td(on) Tr Td(off) Tf Td(on) Tr Td(off) Tf Eon Eoff Zero Gate Voltage Collector Current Collector Emitter saturation Voltage Gate Threshold Voltage Gate - Emitter Leakage Current Characteristic Input Capacitance Output Capacitance Reverse Transfer Capacitance Total gate Charge Gate - Emitter Charge Gate - Collector Charge Turn-on Delay Time Rise Time Turn-off Delay Time Fall Time Turn-on Delay Time Rise Time Turn-off Delay Time Fall Time Turn-on Switching Energy Turn-off Switching Energy Test Conditions Tj = 25C VGE = 0V VCE = 600V Tj = 125C Tj = 25C VGE =15V IC = 360A Tj = 125C VGE = VCE, IC = 4mA VGE = 20V, VCE = 0V Test Conditions VGE = 0V VCE = 25V f = 1MHz VGE = 15V VBus = 300V IC = 360A Inductive Switching (25C) VGE = 15V VBus = 400V IC = 360A R G = 1.25 Inductive Switching (125C) VGE = 15V VBus = 400V IC = 360A R G = 1.25 VGE = 15V Tj = 125C VBus = 400V IC = 360A Tj = 125C R G = 1.25 Test Conditions Tj = 25C Tj = 125C Tc = 80C IF = 400A IF = 800A IF = 400A IF = 400A VR = 400V di/dt =800A/s 400 1.6 1.9 1.4 180 220 1560 5800 Min 600 VR=600V 750 1500 1.8 V
July, 2006 2-6 APTGF350DA60G - Rev 2
Min
Typ
2.0 2.2 3
Max 200 1750 2.5 5 300
Unit A V V nA Unit nF
Dynamic Characteristics
Min
Typ 17.2 1.88 1.6 1320 1160 800 26 25 150 30 26 25 170 40 17.2 14
Max
nC
ns
ns
mJ
Chopper diode ratings and characteristics
Symbol Characteristic VRRM IRM IF VF
Maximum Peak Repetitive Reverse Voltage
Typ
Max
Unit V A A
Maximum Reverse Leakage Current DC Forward Current Diode Forward Voltage
Tj = 125C Tj = 25C Tj = 125C Tj = 25C Tj = 125C
trr Qrr
Reverse Recovery Time Reverse Recovery Charge
ns nC
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APTGF350DA60G
Thermal and package characteristics
Symbol Characteristic RthJC VISOL TJ TSTG TC Torque Wt Junction to Case Thermal Resistance Operating junction temperature range Storage Temperature Range Operating Case Temperature Mounting torque Package Weight To heatsink For terminals M6 M5 IGBT Diode 2500 -40 -40 -40 3 2 Min Typ Max 0.08 0.16 150 125 100 5 3.5 280 Unit C/W V C N.m g
RMS Isolation Voltage, any terminal to case t =1 min, I isol<1mA, 50/60Hz
SP6 Package outline (dimensions in mm)
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3-6
APTGF350DA60G - Rev 2
See application note APT0601 - Mounting Instructions for SP6 Power Modules on www.microsemi.com
July, 2006
APTGF350DA60G
Typical Performance Curve
Output characteristics (VGE=15V) 1200 Ic, Collector Current (A) 1000 800 600
TJ=125C 250s Pulse Test < 0.5% Duty cycle TJ=-55C TJ=25C
Output Characteristics (VGE=10V) 1200
250s Pulse Test < 0.5% Duty cycle TJ=-55C
Ic, Collector Current (A)
1000 800
TJ=25C
600 400 200 0
TJ=125C
400 200 0 0 1 2 3 4 VCE, Collector to Emitter Voltage (V) Transfer Characteristics
0
1 2 3 VCE, Collector to Emitter Voltage (V) Gate Charge
4
VGE, Gate to Emitter Voltage (V)
1200
18 16 14 12 10 8 6 4 2 0 0 200 400 600 800 1000 1200 1400 Gate Charge (nC)
VCE=480V IC = 360A TJ = 25C V CE=120V V CE=300V
Ic, Collector Current (A)
1000 800 600 400 200
250s Pulse Test < 0.5% Duty cycle
TJ=125C TJ=25C TJ=-55C
0 0 1 23456789 VGE, Gate to Emitter Voltage (V) 10
VCE, Collector to Emitter Voltage (V)
VCE, Collector to Emitter Voltage (V)
On state Voltage vs Gate to Emitter Volt. 8 7 6 5 4 3 2 1 0 6 8 10 12 14 16 VGE, Gate to Emitter Voltage (V) Breakdown Voltage vs Junction Temp.
Ic=180A Ic=360A TJ = 25C 250s Pulse Test < 0.5% Duty cycle
On state Voltage vs Junction Temperature 4 3.5 3 2.5 2 1.5 1 0.5 0 -50 -25 0 25 50 75 100 125 TJ, Junction Temperature (C) DC Collector Current vs Case Temperature
Ic=180A 250s Pulse Test < 0.5% Duty cycle V GE = 15V Ic=360A Ic=720A
Ic=720A
Collector to Emitter Breakdown Voltage (Normalized)
1.20
500
Ic, DC Collector Current (A)
1.10 1.00 0.90 0.80 0.70 -50 -25 0 25 50 75 100 125 TJ, Junction Temperature (C)
400 300 200 100 0 0 25 50 75 100 125 150
TC , Case Temperature (C)
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4-6
APTGF350DA60G - Rev 2
July, 2006
APTGF350DA60G
Turn-On Delay Time vs Collector Current td(on), Turn-On Delay Time (ns) td(off), Turn-Off Delay Time (ns) 35 250 Turn-Off Delay Time vs Collector Current
30
VGE = 15V
200
VGE=15V, TJ=125C
25
Tj = 25C VCE = 400V RG = 1.25
150
VGE=15V, T J=25C
20
100
VCE = 400V RG = 1.25
15 100
200
300
400
500
600
50 100
200
300
400
500
600
ICE, Collector to Emitter Current (A) Current Rise Time vs Collector Current 80
VCE = 400V RG = 1.25 VGE =15V, TJ=125C
ICE, Collector to Emitter Current (A) Current Fall Time vs Collector Current
80
tr, Rise Time (ns)
tf, Fall Time (ns)
60
60
TJ = 125C
40
40
TJ = 25C
20
20
VCE = 400V, VGE = 15V, RG = 1.25
0 100 200 300 400 500 ICE, Collector to Emitter Current (A) 600
0 100
200 300 400 500 ICE, Collector to Emitter Current (A)
600
Turn-On Energy Loss vs Collector Current
32
Eon, Turn-On Energy Loss (mJ)
Eoff, Turn-off Energy Loss (mJ)
24 20 16 12 8 4
Turn-Off Energy Loss vs Collector Current
VCE = 400V VGE = 15V RG = 1.25 TJ = 125C
24 16 8 0 100
VCE = 400V R G = 1.25
TJ=125C, VGE=15V
TJ=25C, VGE=15V
TJ = 25C
200
300
400
500
600
0 100
200
300
400
500
600
ICE, Collector to Emitter Current (A) Switching Energy Losses vs Gate Resistance 64 Switching Energy Losses (mJ)
VCE = 400V VGE = 15V TJ= 125C Eon, 720A Eoff, 720A Eoff, 360A
ICE, Collector to Emitter Current (A) Switching Energy Losses vs Junction Temp. Switching Energy Losses (mJ)
40 32 24 16 8
Eoff, 180A Eon, 360A Eoff, 360A Eon, 180A
VCE = 400V VGE = 15V RG = 1.25
Eon, 720A
48
Eoff, 720A
32
Eon, 360A Eoff, 180A
16
Eon, 180A
0 0 2 4 6 8 10 Gate Resistance (Ohms) 12
0 0 25 50 75 100 125
TJ, Junction Temperature (C)
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APTGF350DA60G - Rev 2
July, 2006
APTGF350DA60G
Capacitance vs Collector to Emitter Voltage 100000 C, Capacitance (pF) Cies 10000 Coes 1000 Cres IC , Collector Current (A) 900 800 700 600 500 400 300 200 100 0 0 10 20 30 40 50 0 200 400 600 800 VCE, Collector to Emitter Voltage (V) VCE, Collector to Emitter Voltage (V) Reverse Bias Safe Operating Area
100
Maximum Effective Transient Thermal Impedance, Junction to Case vs Pulse Duration 0.09 Thermal Impedance (C/W) 0.08 0.07 0.06 0.05 0.04 0.03 0.02 0.01 0.7 0.5 0.3 Single Pulse 0.1 0.05 0.0001 0.001 0.01 0.1 Rectangular Pulse Duration (Seconds) 1 10 0.9
0 0.00001
Operating Frequency vs Collector Current F max, Operating Frequency (kHz) 180 160 140 120 100 80 60 40 20 0 50 100 150 200 250 300 350 400 450 IC , Collector Current (A)
Hard switching ZVS ZCS VCE = 400V D = 50% RG = 1.25 TJ = 125C TC=75C
Microsemi reserves the right to change, without notice, the specifications and information contained herein
Microsemi's products are covered by one or more of U.S patents 4,895,810 5,045,903 5,089,434 5,182,234 5,019,522 5,262,336 6,503,786 5,256,583 4,748,103 5,283,202 5,231,474 5,434,095 5,528,058 and foreign patents. U.S and Foreign patents pending. All Rights Reserved.
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APTGF350DA60G - Rev 2
July, 2006

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