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APTGF50H120TG
Full - Bridge NPT IGBT Power Module
VBUS Q1 Q3
VCES = 1200V IC = 50A @ Tc = 80C
Application * Welding converters * Switched Mode Power Supplies * Uninterruptible Power Supplies * Motor control Features * Non Punch Through (NPT) FAST IGBT - Low voltage drop - Low tail current - Switching frequency up to 50 kHz - Soft recovery parallel diodes - Low diode VF - Low leakage current - Avalanche energy rated - RBSOA and SCSOA rated * Kelvin emitter for easy drive * Very low stray inductance - Symmetrical design - Lead frames for power connections * Internal thermistor for temperature monitoring * High level of integration Benefits * Outstanding performance at high frequency operation * Stable temperature behavior * Very rugged * Direct mounting to heatsink (isolated package) * Low junction to case thermal resistance * Solderable terminals both for power and signal for easy PCB mounting * Easy paralleling due to positive TC of VCEsat * Low profile * RoHS compliant
G1
G3
E1 Q2
OUT1
OUT2 Q4
E3
G2
G4
E2 NTC1 NTC2
E4 0/VBUS
G3 E3
G4 E4
OUT2
VBUS
0/VBUS
OUT1
E1 G1
E2 G2
NTC2 NTC1
Absolute maximum ratings
Symbol VCES IC ICM VGE PD RBSOA
Continuous Collector Current Pulsed Collector Current Gate - Emitter Voltage Maximum Power Dissipation Reverse Bias Safe Operating Area
Tc = 25C Tc = 80C Tc = 25C Tc = 25C Tj = 150C
A V W
These Devices are sensitive to Electrostatic Discharge. Proper Handing Procedures Should Be Followed.
APT website - http://www.advancedpower.com
1-6
APTGF50H120TG - Rev 2
November, 2005
Parameter Collector - Emitter Breakdown Voltage
Max ratings 1200 75 50 150 20 312 100A @ 1200V
Unit V
APTGF50H120TG
All ratings @ Tj = 25C unless otherwise specified Electrical Characteristics
Symbol Characteristic ICES VCE(sat) VGE(th) IGES Zero Gate Voltage Collector Current Collector Emitter Saturation Voltage Gate Threshold Voltage Gate - Emitter Leakage Current Test Conditions VGE = 0V Tj = 25C VCE = 1200V Tj = 125C VGE =15V Tj = 25C IC = 50A Tj = 125C VGE = VCE, IC = 1 mA VGE = 20 V, VCE = 0V Min Typ Max 500 2500 3.7 6.5 100 Unit A V V nA
3.2 4.0 4.5
Dynamic Characteristics
Symbol Cies Coes Cres Qg Qge Qgc Td(on) Tr Td(off) Tf Eon Eoff Td(on) Tr Td(off) Tf Eon Eoff
Characteristic Input Capacitance Output Capacitance Reverse Transfer Capacitance Total gate Charge Gate - Emitter Charge Gate - Collector Charge Turn-on Delay Time Rise Time Turn-off Delay Time Fall Time Turn-on Switching Energy Turn-off Switching Energy Turn-on Delay Time Rise Time Turn-off Delay Time Fall Time Turn-on Switching Energy Turn-off Switching Energy
Test Conditions VGE = 0V VCE = 25V f = 1MHz VGS = 15V VBus = 600V IC = 50A Inductive Switching (25C) VGE = 15V VBus = 600V IC = 50A RG = 5
Min
Inductive Switching (125C) VGE = 15V VBus = 600V IC = 50A RG = 5
Typ 3450 330 220 330 35 200 35 65 320 30 5.4 2.3 35 65 360 40 6.9 3.05
Max
Unit pF
nC
ns
mJ
ns
mJ
Reverse diode ratings and characteristics
Symbol Characteristic VRRM Maximum Peak Repetitive Reverse Voltage IRM IF VF Maximum Reverse Leakage Current DC Forward Current Diode Forward Voltage
Test Conditions VR=1200V IF = 60A IF = 120A IF = 60A IF = 60A VR = 800V di/dt =400A/s Tj = 25C Tj = 125C Tc = 70C
Min 1200
Typ
Max 350 600
Unit V A A V
November, 2005 2-6 APTGF50H120TG - Rev 2
Tj = 125C Tj = 25C Tj = 125C Tj = 25C Tj = 125C
60 2.0 2.3 1.8 370 500 1320 6900
2.5
trr Qrr
Reverse Recovery Time Reverse Recovery Charge
ns nC
APT website - http://www.advancedpower.com
APTGF50H120TG
Thermal and package characteristics
Symbol Characteristic RthJC VISOL TJ TSTG TC Torque Wt Junction to Case Thermal Resistance Operating junction temperature range Storage Temperature Range Operating Case Temperature Mounting torque Package Weight IGBT Diode 2500 -40 -40 -40 1.5 Min Typ Max 0.4 0.65 150 125 100 4.7 160 Unit C/W V C N.m g
RMS Isolation Voltage, any terminal to case t =1 min, I isol<1mA, 50/60Hz
To Heatsink
M5
Temperature sensor NTC (see application note APT0406 on www.advancedpower.com for more information).
Symbol Characteristic R25 Resistance @ 25C B 25/85 T25 = 298.15 K Min Typ 50 3952
Max
Unit k K
RT =
R 25
1 1 RT : Thermistor value at T exp B 25 / 85 T - T 25
T: Thermistor temperature
SP4 Package outline (dimensions in mm)
APT website - http://www.advancedpower.com
3-6
APTGF50H120TG - Rev 2
ALL DIMENSIONS MARKED " * " ARE TOLERENCED AS :
November, 2005
APTGF50H120TG
Typical Performance Curve
200 Ic, Collector Current (A) 160 120 80 40 0 0 2 4 6 VCE, Collector to Emitter Voltage (V) Transfer Characteristics VGE, Gate to Emitter Voltage (V) 8
TJ=125C
Output characteristics (VGE=15V)
250s Pulse Test < 0.5% Duty cycle TJ=25C
50
Ic, Collector Current (A)
Output Characteristics (VGE=10V)
250s Pulse Test < 0.5% Duty cycle TJ =25C
40 30 20
TJ=125C
10 0 0 1 2 3 VCE, Collector to Emitter Voltage (V)
Gate Charge
4
300
Ic, Collector Current (A)
18 16 14 12 10 8 6 4 2 0 0 50 100 150 200 250 300 350
Gate Charge (nC) On state Voltage vs Junction Temperature
250s Pulse Test < 0.5% Duty cycle VGE = 15V Ic=100A Ic=50A VCE =960V IC = 50A TJ = 25C VCE=240V VCE=600V
250 200 150 100 50 0 0
250s Pulse Test < 0.5% Duty cycle
TJ=25C
TJ=125C TJ=25C
4 8 12 VGE , Gate to Emitter Voltage (V)
On state Voltage vs Gate to Emitter Volt.
TJ = 25C 250s Pulse Test < 0.5% Duty cycle
16
VCE, Collector to Emitter Voltage (V)
VCE, Collector to Emitter Voltage (V)
9 8 7 6 5 4 3 2 1 0 9
6 5 4 3 2 1
Ic=100A
Ic=50A
Ic=25A
Ic=25A
10 11 12 13 14 15 VGE, Gate to Emitter Voltage (V)
Breakdown Voltage vs Junction Temp.
16
0 -50
-25 0 25 50 75 100 TJ, Junction Temperature (C)
125
Collector to Emitter Breakdown Voltage (Normalized)
1.20 1.10 1.05 1.00 0.95 0.90 0.85 0.80 0.75 0.70 -50 -25 0 25 50 75 100 TJ, Junction Temperature (C) 125
Ic, DC Collector Current (A)
90 80 60 50 40 30 20 10 0 70
DC Collector Current vs Case Temperature
1.15
-50
-25
0 25 50 75 100 125 150 TC, Case Temperature (C)
APT website - http://www.advancedpower.com
4-6
APTGF50H120TG - Rev 2
November, 2005
APTGF50H120TG
Turn-On Delay Time vs Collector Current
VCE = 600V RG = 5 VGE = 15V
Turn-Off Delay Time vs Collector Current td(off), Turn-Off Delay Time (ns)
td(on), Turn-On Delay Time (ns)
45
400
VGE=15V, TJ=125C
40
350
35
300
VGE=15V, T J=25C VCE = 600V RG = 5
30
250
25 0 25 50 75 100 125 ICE, Collector to Emitter Current (A) Current Rise Time vs Collector Current
200 0 25 50 75 100 125
ICE, Collector to Emitter Current (A) Current Fall Time vs Collector Current
180
VCE = 600V RG = 5
50
tr, Rise Time (ns)
tf, Fall Time (ns)
140
40
TJ = 125C
100
VGE=15V
30
TJ = 25C VCE = 600V, VGE = 15V, RG = 5
60
20 0 25 50 75 100 ICE, Collector to Emitter Current (A) 125
20 0 25 50 75 100 ICE, Collector to Emitter Current (A) 125
Eon, Turn-On Energy Loss (mJ)
24 20 16 12 8 4 0 0
VCE = 600V RG = 5
TJ=125C, VGE=15V
Eoff, Turn-off Energy Loss (mJ)
28
Turn-On Energy Loss vs Collector Current
Turn-Off Energy Loss vs Collector Current
8
VCE = 600V VGE = 15V R G = 5 TJ = 125C
6
4
TJ = 25C
TJ=25C, VGE =15V
2
0 0 25 50 75 100 ICE, Collector to Emitter Current (A) 125
25 50 75 100 ICE, Collector to Emitter Current (A)
125
Switching Energy Losses (mJ)
16 14 12 10 8 6 4 2 0 0
VCE = 600V VGE = 15V T J= 125C Eon, 50A Eoff, 50A
Switching Energy Losses (mJ)
Switching Energy Losses vs Gate Resistance 18
8
Switching Energy Losses vs Junction Temp.
VCE = 600V VGE = 15V RG = 5 Eon, 50A
6
4
Eoff, 50A
Eon, 25A
2
Eon, 25A Eoff, 25A
0 10 20 30 40 Gate Resistance (Ohms) 50 0 25 50 75 100 TJ, Junction Temperature (C) 125
APT website - http://www.advancedpower.com
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APTGF50H120TG - Rev 2
Eoff, 25A
November, 2005
APTGF50H120TG
Capacitance vs Collector to Emitter Voltage 10000 C, Capacitance (pF)
Cies
Reverse Bias Safe Operating Area 120 IC, Collector Current (A) 100 80 60 40 20 0 0 400 800 1200 V CE, Collector to Emitter Voltage (V)
1000
Coes
100 0
Cres
10 20 30 40 VCE, Collector to Emitter Voltage (V)
50
0.45 Thermal Impedance (C/W) 0.4 0.35 0.3 0.25 0.2 0.15 0.1 0.05 0.7 0.5 0.3 0.1 0.05 0.9
Maximum Effective Transient Thermal Impedance, Junction to Case vs Pulse Duration
Single Pulse 0.0001 0.001 0.01 0.1 1 10
0 0.00001
Rectangular Pulse Duration (Seconds) Operating Frequency vs Collector Current 120 100 80 60 40
ZCS ZVS VCE = 600V D = 50% RG = 5 TJ = 125C TC= 75C
Fmax, Operating Frequency (kHz)
20 0
Hard switching
10
20 30 40 50 IC , Collector Current (A)
60
APT reserves the right to change, without notice, the specifications and information contained herein
APT's products are covered by one or more of U.S patents 4,895,810 5,045,903 5,089,434 5,182,234 5,019,522 5,262,336 6,503,786 5,256,583 4,748,103 5,283,202 5,231,474 5,434,095 5,528,058 and foreign patents. U.S and Foreign patents pending. All Rights Reserved.
APT website - http://www.advancedpower.com
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APTGF50H120TG - Rev 2
November, 2005

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