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APTGF50H60T3G
Full - Bridge NPT IGBT Power Module
13 14
VCES = 600V IC = 50A @ Tc = 80C
Application * Welding converters * Switched Mode Power Supplies * Uninterruptible Power Supplies * Motor control Features * Non Punch Through (NPT) Fast IGBT(R) - Low voltage drop - Low tail current - Switching frequency up to 50 kHz - Soft recovery parallel diodes - Low diode VF - Low leakage current - Avalanche energy rated - RBSOA and SCSOA rated - Symmetrical design * Kelvin emitter for easy drive * Very low stray inductance * High level of integration * Internal thermistor for temperature monitoring Benefits * Outstanding performance at high frequency operation * Direct mounting to heatsink (isolated package) * Low junction to case thermal resistance * Solderable terminals both for power and signal for easy PCB mounting * Low profile * Easy paralleling due to positive TC of VCEsat * Each leg can be easily paralleled to achieve a phase leg of twice the current capability * RoHS compliant Max ratings 600 65 50 230 20 250 100A @ 500V Unit V
July, 2006 1-6 APTGF50H60T3G - Rev 2
Q1 18 19
CR1
CR3
Q3 11 10
22 23 Q2
7 8 CR4 Q4
26 27
CR2
4 3
29 15
30
31 R1
32 16
28 27 26 25 29 30
23 22
20 19 18 16 15
31 32 2 3 4 7 8 10 11 12
14 13
All multiple inputs and outputs must be shorted together Example: 13/14 ; 29/30 ; 22/23 ...
Absolute maximum ratings
Symbol VCES IC ICM VGE PD RBSOA
Parameter Collector - Emitter Breakdown Voltage Continuous Collector Current Pulsed Collector Current Gate - Emitter Voltage Maximum Power Dissipation TC = 25C TC = 80C TC = 25C TC = 25C Tj = 125C
A V W
Reverse Bias Safe Operating Area
These Devices are sensitive to Electrostatic Discharge. Proper Handing Procedures Should Be Followed. See application note APT0502 on www.microsemi.com
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APTGF50H60T3G
All ratings @ Tj = 25C unless otherwise specified Electrical Characteristics
Symbol Characteristic ICES VCE(sat) VGE(th) IGES Symbol Cies Coes Cres Qg Qge Qgc Td(on) Tr Td(off) Tf Td(on) Tr Td(off) Tf Eon Eoff Test Conditions Min Zero Gate Voltage Collector Current Collector Emitter Saturation Voltage Gate Threshold Voltage Gate - Emitter Leakage Current Characteristic Input Capacitance Output Capacitance Reverse Transfer Capacitance Total gate Charge Gate - Emitter Charge Gate - Collector Charge Turn-on Delay Time Rise Time Turn-off Delay Time Fall Time Turn-on Delay Time Rise Time Turn-off Delay Time Fall Time Turn-on Switching Energy Turn-off Switching Energy VGE = 0V VCE = 600V Tj = 25C Tj = 125C Tj = 25C VGE =15V IC = 50A Tj = 125C VGE = VCE , IC = 1mA VGE = 20V, VCE = 0V Test Conditions VGE = 0V VCE = 25V f = 1MHz VGE = 15V VBus = 300V IC = 50A Inductive Switching (25C) VGE = 15V VBus = 400V IC = 50A R G = 2.7 Inductive Switching (125C) VGE = 15V VBus = 400V IC = 50A R G = 2.7 VGE = 15V Tj = 125C VBus = 400V IC = 50A Tj = 125C R G = 2.7 Typ Max 250 500 2.45 6 400 Typ 2200 323 200 166 20 100 40 9 120 12 42 10 130 21 0.5 mJ 1 Max Unit A V V nA Unit pF
1.7 4
2.0 2.2
Dynamic Characteristics
Min
nC
ns
ns
Reverse diode ratings and characteristics
Symbol Characteristic VRRM IRM IF VF
Maximum Peak Repetitive Reverse Voltage
Test Conditions Tj = 25C Tj = 125C Tc = 70C IF = 30A IF = 60A IF = 30A IF = 30A VR = 400V di/dt =200A/s
Min 600
Typ
Max 250 500
Unit V A A
Maximum Reverse Leakage Current DC Forward Current Diode Forward Voltage
VR=600V
trr Qrr
Reverse Recovery Time Reverse Recovery Charge
Tj = 25C Tj = 125C Tj = 25C Tj = 125C
85 160 130 700
ns nC
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APTGF50H60T3G - Rev 2
July, 2006
Tj = 125C
30 1.6 1.9 1.4
1.8 V
APTGF50H60T3G
Temperature sensor NTC (see application note APT0406 on www.microsemi.com for more information).
Symbol Characteristic R25 Resistance @ 25C B 25/85 T25 = 298.15 K Min Typ 50 3952 Max Unit k K
RT =
R 25
1 1 RT : Thermistor value at T exp B 25 / 85 T - T 25
T: Thermistor temperature
Thermal and package characteristics
Symbol Characteristic RthJC VISOL TJ TSTG TC Torque Wt Junction to Case Thermal Resistance Operating junction temperature range Storage Temperature Range Operating Case Temperature Mounting torque Package Weight IGBT Diode
Min
Typ
Max 0.5 1.2 150 125 100 4.7 110
Unit C/W V C N.m g
RMS Isolation Voltage, any terminal to case t =1 min, I isol<1mA, 50/60Hz
To heatsink
M4
2500 -40 -40 -40 2.5
SP3 Package outline (dimensions in mm)
1
12
See application note 1901 - Mounting Instructions for SP3 Power Modules on www.microsemi.com
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APTGF50H60T3G - Rev 2
July, 2006
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28
APTGF50H60T3G
Typical Performance Curve
Output characteristics (VGE=15V) Output Characteristics (VGE=10V) 150 Ic, Collector Current (A)
TJ=25C
250s Pulse Test < 0.5% Duty cycle TJ=-55C
150 Ic, Collector Current (A)
250s Pulse Test < 0.5% Duty cycle TJ=-55C
100
TJ=125C
100
TJ=25C
50
50
TJ=125C
0 0 1 2 3 4
VCE, Collector to Emitter Voltage (V) Transfer Characteristics 150 125 100 75 50 25
TJ=25C TJ=-55C
0 0 1 2 3 VCE, Collector to Emitter Voltage (V) Gate Charge
IC = 50A TJ = 25C VCE=120V VCE=300V VCE =480V
4
18 VGE, Gate to Emitter Voltage (V)
250s Pulse Test < 0.5% Duty cycle
Ic, Collector Current (A)
16 14 12 10 8 6 4 2 0 0
TJ=125C
0 0 1 3 4 5 67 8 9 VGE, Gate to Emitter Voltage (V) 2 10
25
50
75
100
125 150 175 200
Gate Charge (nC) VCE, Collector to Emitter Voltage (V) On state Voltage vs Junction Temperature 4 3.5 3 2.5 2 1.5 1 0.5 0 -50 -25 0 25 50 75 100 TJ, Junction Temperature (C) 125
Ic=25A 250s Pulse Test < 0.5% Duty cycle VGE = 15V Ic=50A Ic=100A
VCE, Collector to Emitter Voltage (V)
On state Voltage vs Gate to Emitter Volt. 8 7 6 5 4 3 2 1 0 6 8 10 12
Ic=25A Ic=50A TJ = 25C 250s Pulse Test < 0.5% Duty cycle Ic=100A
14
16
VGE, Gate to Emitter Voltage (V) Breakdown Voltage vs Junction Temp. Collector to Emitter Breakdown Voltage (Normalized) 1.20 1.10 1.00 0.90 0.80 0.70 -50 -25 0 25 50 75 100 125 TJ, Junction Temperature (C) Ic, DC Collector Current (A)
DC Collector Current vs Case Temperature
80 70 60 50 30 20 10 0 -50 -25 0 25 50 75 100 125 150
TC, Case Temperature (C)
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APTGF50H60T3G - Rev 2
July, 2006
40
APTGF50H60T3G
Turn-On Delay Time vs Collector Current td(on), Turn-On Delay Time (ns) td(off), Turn-Off Delay Time (ns) 60
VGE = 15V
Turn-Off Delay Time vs Collector Current 200 175 150 125 100 75 50 0 25 50 75 100 125 150 ICE, Collector to Emitter Current (A) Current Fall Time vs Collector Current
VCE = 400V, VGE = 15V, RG = 2.7 VCE = 400V RG = 2.7 VGE=15V, TJ=125C VGE=15V, TJ =25C
50
40
Tj = 125C VCE = 400V RG = 2.7
30
20 0 25 50 75 100 125 150 ICE, Collector to Emitter Current (A) Current Rise Time vs Collector Current 60 50
VCE = 400V R G = 2.7
60 50
tf, Fall Time (ns)
tr, Rise Time (ns)
40 30 20 10 0 0 25 50 75 100 125 ICE, Collector to Emitter Current (A) 150
VGE=15V, T J=125C
40 30 20 10 0 0 25 50 75 100 125 ICE, Collector to Emitter Current (A) 150
T J = 125C
TJ = 25C
Turn-On Energy Loss vs Collector Current E on, Turn-On Energy Loss (mJ) Eoff, Turn-off Energy Loss (mJ)
Turn-Off Energy Loss vs Collector Current
2 1.5 1 0.5
VCE = 400V R G = 2.7 TJ=125C, VGE=15V
2.5 2 1.5 1 0.5 0 0 25 50 75 100 125 150
ICE, Collector to Emitter Current (A) Reverse Bias Safe Operating Area
VCE = 400V VG E = 15V RG = 2.7 TJ = 125C
0 0 25 50 75 100 125 150
ICE, Collector to Emitter Current (A) Switching Energy Losses vs Gate Resistance
3
Switching Energy Losses (mJ)
V CE = 400V
120
IC , Collector Current (A)
V GE = 15V TJ= 125C
2.5 2 1.5
100 80 60 40 20 0
Eon, 50A
Eoff, 50A
1 0.5
Eon, 50A
0 0 5 10 15 20 Gate Resistance (Ohms) 25
0
200 400 600 VCE , Collector to Emitter Voltage (V)
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APTGF50H60T3G - Rev 2
July, 2006
APTGF50H60T3G
Capacitance vs Collector to Emitter Voltage Fmax, Operating Frequency (kHz) 10000 C, Capacitance (pF) Operating Frequency vs Collector Current
240 200 160 120 80 40 0 0 20 40 60 80 100
IC, Collector Current (A)
hard switching ZVS ZCS VCE = 400V D = 50% RG = 2.7 TJ = 125C TC= 75C
Cies
1000
Coes Cres
100 0 10 20 30 40 50 VCE, Collector to Emitter Voltage (V)
Maximum Effective Transient Thermal Impedance, Junction to Case vs Pulse Duration 0.6 Thermal Impedance (C/W) 0.5 0.4 0.3 0.2 0.1 0.9 0.7 0.5 0.3 Single Pulse 0.0001 0.001 0.01 0.1 Rectangular Pulse Duration (Seconds) 1 10
0.1 0.05 0 0.00001
Microsemi reserves the right to change, without notice, the specifications and information contained herein
Microsemi's products are covered by one or more of U.S patents 4,895,810 5,045,903 5,089,434 5,182,234 5,019,522 5,262,336 6,503,786 5,256,583 4,748,103 5,283,202 5,231,474 5,434,095 5,528,058 and foreign patents. U.S and Foreign patents pending. All Rights Reserved.
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APTGF50H60T3G - Rev 2
July, 2006

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