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| APTGT150A120G Phase leg Fast Trench + Field Stop IGBT(R) Power Module VBUS Q1 G1 VCES = 1200V IC = 150A @ Tc = 80C Application * Welding converters * Switched Mode Power Supplies * Uninterruptible Power Supplies * Motor control Features * Fast Trench + Field Stop IGBT(R) Technology - Low voltage drop - Low tail current - Switching frequency up to 20 kHz - Soft recovery parallel diodes - Low diode VF - Low leakage current - Avalanche energy rated - RBSOA and SCSOA rated * Kelvin emitter for easy drive * Very low stray inductance - Symmetrical design - M5 power connectors * High level of integration Benefits * Stable temperature behavior * Very rugged * Direct mounting to heatsink (isolated package) * Low junction to case thermal resistance * Easy paralleling due to positive TC of VCEsat * Low profile * RoHS Compliant E1 OUT Q2 G2 E2 0/VBUS G1 E1 VBUS 0/VBUS OUT E2 G2 Absolute maximum ratings Symbol VCES IC ICM VGE PD RBSOA Parameter Collector - Emitter Breakdown Voltage Continuous Collector Current Pulsed Collector Current Gate - Emitter Voltage Maximum Power Dissipation TC = 25C TC = 80C TC = 25C TC = 25C Tj = 125C V W Reverse Bias Safe Operating Area 300A @ 1150V These Devices are sensitive to Electrostatic Discharge. Proper Handing Procedures Should Be Followed. See application note APT0502 on www.microsemi.com www.microsemi.com 1-5 APTGT150A120G - Rev 1 July, 2006 Max ratings 1200 220 150 350 20 690 Unit V A APTGT150A120G All ratings @ Tj = 25C unless otherwise specified Electrical Characteristics Symbol Characteristic ICES VCE(sat) VGE(th) IGES Zero Gate Voltage Collector Current Collector Emitter Saturation Voltage Gate Threshold Voltage Gate - Emitter Leakage Current Test Conditions VGE = 0V, VCE = 1200V Tj = 25C VGE = 15V IC = 150A Tj = 125C VGE = VCE , IC = 3 mA VGE = 20V, VCE = 0V Min Typ 1.7 2.0 5.8 Max 350 2.1 6.5 400 Unit A V V nA 5.0 Dynamic Characteristics Symbol Cies Coes Cres Td(on) Tr Td(off) Tf Td(on) Tr Td(off) Tf Eon Eoff Characteristic Input Capacitance Output Capacitance Reverse Transfer Capacitance Turn-on Delay Time Rise Time Turn-off Delay Time Fall Time Turn-on Delay Time Rise Time Turn-off Delay Time Fall Time Turn-on Switching Energy Turn-off Switching Energy Test Conditions VGE = 0V VCE = 25V f = 1MHz Inductive Switching (25C) VGE = 15V VBus = 600V IC = 150A R G = 2.2 Inductive Switching (125C) VGE = 15V VBus = 600V IC = 150A R G = 2.2 VGE = 15V Tj = 125C VBus = 600V IC = 150A Tj = 125C R G = 2.2 Min Typ 10.7 0.56 0.48 280 40 420 75 290 45 520 90 14 Max Unit nF ns ns mJ 16 Reverse diode ratings and characteristics Symbol Characteristic VRRM IRM IF VF trr Qrr Er Maximum Peak Repetitive Reverse Voltage Test Conditions Tj = 25C Tj = 125C Tc = 80C Tj = 25C Tj = 125C Tj = 25C Tj = 125C Tj = 25C Tj = 125C Tj = 25C Tj = 125C Min 1200 Typ Max 250 600 Unit V A A Maximum Reverse Leakage Current DC Forward Current Diode Forward Voltage Reverse Recovery Time Reverse Recovery Charge Reverse Recovery Energy VR=1200V IF = 150A 150 1.6 1.6 170 280 14 28 6 11 2.1 V ns July, 2006 2-5 APTGT150A120G - Rev 1 IF = 150A VR = 600V di/dt =2500A/s C mJ www.microsemi.com APTGT150A120G Thermal and package characteristics Symbol Characteristic RthJC VISOL TJ TSTG TC Torque Wt Junction to Case Thermal Resistance Operating junction temperature range Storage Temperature Range Operating Case Temperature Mounting torque Package Weight To heatsink For terminals M6 M5 IGBT Diode 2500 -40 -40 -40 3 2 Min Typ Max 0.18 0.32 150 125 100 5 3.5 280 Unit C/W V C N.m g RMS Isolation Voltage, any terminal to case t =1 min, I isol<1mA, 50/60Hz SP6 Package outline (dimensions in mm) See application note APT0601 - Mounting Instructions for SP6 Powe r Modules on www.microsemi.com APTGT150A120G - Rev 1 www.microsemi.com 3-5 July, 2006 APTGT150A120G Typical Performance Curve 300 250 IC (A) Output Characteristics (VGE=15V) Output Characteristics 300 TJ = 125C T J=25C 250 TJ=125C VGE =17V V GE=13V VGE =15V V GE=9V 200 IC (A) 200 150 100 50 0 150 100 50 0 0 1 2 VCE (V) 3 4 0 1 2 V CE (V) 3 4 300 250 200 IC (A) 150 100 50 0 5 Transfert Characteristics 32 T J=25C T J=125C Energy losses vs Collector Current 28 24 E (mJ) 20 16 12 8 4 0 0 50 100 150 IC (A) Reverse Bias Safe Operating Area 350 300 250 IC (A) Eoff Er V CE = 600V V GE = 15V RG = 2.2 T J = 125C Eoff Eon T J=125C 6 7 8 9 VGE (V) 10 11 12 200 250 300 Switching Energy Losses vs Gate Resistance 34 30 26 E (mJ) 22 18 14 10 6 2 0 2 4 6 8 10 12 14 Gate Resistance (ohms) 16 18 Eon Er VCE = 600V VGE =15V IC = 150A TJ = 125C Eon 200 150 100 50 0 0 400 800 V CE (V) 1200 1600 V GE=15V T J=125C RG=2.2 maximum Effective Transient Thermal Impedance, Junction to Case vs Pulse Duration 0.2 Thermal Impedance (C/W) 0.9 0.16 0.12 0.5 0.08 0.04 0.3 0.1 Single Pulse 0.0001 0.001 0.01 0.1 1 10 0.7 IGBT 0.05 0 0.00001 rectangular Pulse Duration (Seconds) www.microsemi.com 4-5 APTGT150A120G - Rev 1 July, 2006 APTGT150A120G Operating Frequency vs Collector Current Fmax, Operating Frequency (kHz) 60 50 40 30 20 10 0 0 Hard switching ZCS ZVS VCE =600V D=50% RG=2.2 T J=125C T c=75C Forward Characteristic of diode 300 250 200 IF (A) 150 100 50 0 TJ =125C T J=125C T J=25C 40 80 120 IC (A) 160 200 240 0 0.4 0.8 1.2 1.6 V F (V) 2 2.4 maximum Effective Transient Thermal Impedance, Junction to Case vs Pulse Duration 0.35 Thermal Impedance (C/W) 0.3 0.25 0.2 0.15 0.1 0.05 0.5 0.3 0.1 0.05 0.0001 0.001 Single Pulse 0.01 0.1 1 10 0.9 0.7 Diode 0 0.00001 rectangular Pulse Duration (Seconds) Microsemi reserves the right to change, without notice, the specifications and information contained herein Microsemi's products are covered by one or more of U.S patents 4,895,810 5,045,903 5,089,434 5,182,234 5,019,522 5,262,336 6,503,786 5,256,583 4,748,103 5,283,202 5,231,474 5,434,095 5,528,058 and foreign patents. U.S and Foreign patents pending. All Rights Reserved. www.microsemi.com 5-5 APTGT150A120G - Rev 1 July, 2006 |
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