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APTGT150X120E3G
3 Phase bridge Trench + Field Stop IGBT(R) Power Module VCES = 1200V IC = 150A @ Tc = 80C
Application * AC Motor control Features * Trench + Field Stop IGBT(R) Technology - Low voltage drop - Low tail current - Switching frequency up to 20 kHz - Soft recovery parallel diodes - Low diode VF - Low leakage current - Avalanche energy rated - RBSOA and SCSOA rated * Kelvin emitter for easy drive * Very low stray inductance * High level of integration
19 17 15
20
14
21
13
Benefits * Stable temperature behavior * Very rugged * Solderable terminals for easy PCB mounting * Direct mounting to heatsink (isolated package) * Low junction to case thermal resistance * Easy paralleling due to positive TC of VCEsat * Low profile * RoHS complaint
12
34
56
78
9 10
11 12
Absolute maximum ratings
Symbol VCES IC ICM VGE PD RBSOA
Parameter Collector - Emitter Breakdown Voltage Continuous Collector Current Pulsed Collector Current Gate - Emitter Voltage Maximum Power Dissipation TC = 25C TC = 80C TC = 25C TC = 25C Tj = 125C
V W
Reverse Bias Safe Operating Area
300A @ 1150V
These Devices are sensitive to Electrostatic Discharge. Proper Handing Procedures Should Be Followed.
APT website - http://www.advancedpower.com
1-5
APTGT150X120E3G - Rev 1
January, 2006
Max ratings 1200 220 150 350 20 700
Unit V A
APTGT150X120E3G
All ratings @ Tj = 25C unless otherwise specified Electrical Characteristics
Symbol Characteristic ICES VCE(sat) VGE(th) IGES Symbol Cies Coes Cres Td(on) Tr Td(off) Tf Td(on) Tr Td(off) Tf Eon Eoff Zero Gate Voltage Collector Current Collector Emitter saturation Voltage Gate Threshold Voltage Gate - Emitter Leakage Current Test Conditions VGE = 0V, VCE = 1200V Tj = 25C VGE = 15V IC = 150A Tj = 125C VGE = VCE , IC = 6mA VGE = 20V, VCE = 0V Test Conditions VGE = 0V VCE = 25V f = 1MHz Inductive Switching (25C) VGE = 15V VBus = 600V IC = 150A R G = 2.2 Inductive Switching (125C) VGE = 15V VBus = 600V IC = 150A R G = 2.2 VGE = 15V Tj = 125C VBus = 600V IC = 150A Tj = 125C R G = 2.2 Min Typ 1.7 2.0 5.8 Max 250 2.1 6.5 600 Unit A V V nA
5.0
Dynamic Characteristics
Characteristic Input Capacitance Output Capacitance Reverse Transfer Capacitance Turn-on Delay Time Rise Time Turn-off Delay Time Fall Time Turn-on Delay Time Rise Time Turn-off Delay Time Fall Time Turn-on Switching Energy Turn-off Switching Energy
Min
Typ 10.8 0.56 0.5 250 30 420 70 300 50 520 90 14 17
Max
Unit nF
ns
ns
mJ
Reverse diode ratings and characteristics
Symbol Characteristic VRRM Maximum Peak Repetitive Reverse Voltage IRM IF VF Er trr Qrr Maximum Reverse Leakage Current DC Forward current Diode Forward Voltage Reverse Recovery Energy Reverse Recovery Time Reverse Recovery Charge
Test Conditions VR=1200V IF = 150A VGE = 0V IF = 150A VR = 600V
di/dt =3000A/s
Min 1200 Tj = 25C Tj = 125C Tc = 80C Tj = 25C Tj = 125C Tj = 125C Tj = 25C Tj = 125C Tj = 25C Tj = 125C
Typ
Max 250 500
Unit V A A
150 1.6 1.6 12 170 280 15 29
2.1
V mJ ns C
January, 2006 2-5 APTGT150X120E3G - Rev 1
APT website - http://www.advancedpower.com
APTGT150X120E3G
Thermal and package characteristics
Symbol Characteristic RthJC VISOL TJ TSTG TC Torque Wt Junction to Case Thermal resistance Operating junction temperature range Storage Temperature Range Operating Case Temperature Mounting torque Package Weight IGBT Diode 2500 -40 -40 -40 3 Min Typ Max 0.18 0.34 150 125 125 4.5 300 Unit
C/W
RMS Isolation Voltage, any terminal to case t =1 min, I isol<1mA, 50/60Hz
V C N.m g
To Heatsink
M5
E3 Package outline (dimensions in mm)
PIN 1 PIN 21
ALL DIMENSIONS MARKED " * " ARE TOLERENCED AS :
APT website - http://www.advancedpower.com
3-5
APTGT150X120E3G - Rev 1
January, 2006
APTGT150X120E3G
Typical Performance Curve
Output Characteristics (V GE=15V) Output Characteristics 300 250
TJ=125C TJ = 125C VGE =17V VGE=13V VGE =15V VGE=9V
300 250
IC (A)
TJ =25C
200 150 100 50 0 0 1 2 VCE (V) 3 4
IC (A)
200 150 100 50 0 0 1 2 VCE (V)
3
4
300 250 200 IC (A) 150 100 50 0 5
Transfert Characteristics 40
T J=25C
Energy losses vs Collector Current
VCE = 600V VGE = 15V RG = 2.2 T J = 125C Eoff
30 E (mJ)
TJ=125C
Eon
20 10 0
Eon Er
T J=125C
6
7
8
9
10
11
12
0
50
100
150 IC (A)
200
250
300
VGE (V) Switching Energy Losses vs Gate Resistance 35 30 25 E (mJ) 20 15 10 5 0 0 2 4 6 8 10 12 Gate Resistance (ohms) 14 16
Eon V CE = 600V VGE =15V IC = 150A TJ = 125C Eon
Reverse Safe Operating Area 350 300 250 IC (A)
Eoff
200 150 100 50 0 0 400 800 VCE (V) 1200 1600
V GE=15V T J=125C RG=2.2
Er
maximum Effective Transient Thermal Impedance, Junction to Pulse Duration Thermal Impedance (C/W) 0.2 0.18 0.16 0.14 0.12 0.1 0.08 0.06 0.04 0.02 0.9 0.7 0.5 0.3 0.1 0.05 0.0001 0.001 0.01 0.1 1 10 Single Pulse
IGBT
0 0.00001
rectangular Pulse Duration (Seconds)
APT website - http://www.advancedpower.com
4-5
APTGT150X120E3G - Rev 1
January, 2006
APTGT150X120E3G
Operating Frequency vs Collector Current Fmax, Operating Frequency (kHz) 60 50 40
ZCS ZVS VCE=600V D=50% RG=2.2 TJ=125C TC=75C
Forward Characteristic of diode 300 250 200 IC (A) 150 100
30 20 10 0 10 40 70 100 130 160 190 220 IC (A)
Hard Switching
50 0 0
TJ=125C TJ =25C
0.4
0.8
1.2 1.6 V F (V)
2
2.4
maximum Effective Transient Thermal Impedance, Junction to Pulse Duration 0.35 Thermal Impedance (C/W) 0.3 0.25 0.2 0.15 0.1 0.05 0.1 0.05 0.0001 0.001 Single Pulse 0.9 0.7 0.5 0.3
Diode
0 0.00001
0.01
0.1
1
10
rectangular Pulse Duration (Seconds)
APT reserves the right to change, without notice, the specifications and information contained herein
APT's products are covered by one or more of U.S patents 4,895,810 5,045,903 5,089,434 5,182,234 5,019,522 5,262,336 6,503,786 5,256,583 4,748,103 5,283,202 5,231,474 5,434,095 5,528,058 and foreign patents. U.S and Foreign patents pending. All Rights Reserved.
APT website - http://www.advancedpower.com
5-5
APTGT150X120E3G - Rev 1
January, 2006

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