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APTGT300A170 Phase leg Trench + Field Stop IGBT(R) Power Module VBUS Q1 G1 VCES = 1700V IC = 300A @ Tc = 80C Application * Welding converters * Switched Mode Power Supplies * Uninterruptible Power Supplies * Motor control Features * Trench + Field Stop IGBT(R) Technology - Low voltage drop - Low tail current - Switching frequency up to 20 kHz - Soft recovery parallel diodes - Low diode VF - Low leakage current - Avalanche energy rated - RBSOA and SCSOA rated * Kelvin emitter for easy drive * Very low stray inductance - Symmetrical design - M5 power connectors * High level of integration Benefits * Stable temperature behavior * Very rugged * Direct mounting to heatsink (isolated package) * Low junction to case thermal resistance * Easy paralleling due to positive TC of VCEsat * Low profile E1 OUT Q2 G2 E2 0/VBUS G1 E1 VBUS 0/VBUS OUT E2 G2 Absolute maximum ratings Symbol VCES IC ICM VGE PD RBSOA Parameter Collector - Emitter Breakdown Voltage Continuous Collector Current Pulsed Collector Current Gate - Emitter Voltage Maximum Power Dissipation TC = 25C TC = 80C TC = 25C TC = 25C Tj = 125C Reverse Bias Safe Operating Area 600A @ 1600V These Devices are sensitive to Electrostatic Discharge. Proper Handing Procedures Should Be Followed. APT website - http://www.advancedpower.com 1-5 APTGT300A170 - Rev 0 May, 2005 Max ratings 1700 400 300 600 20 1660 Unit V A V W APTGT300A170 All ratings @ Tj = 25C unless otherwise specified Electrical Characteristics Symbol Characteristic ICES VCE(sat) VGE(th) IGES Zero Gate Voltage Collector Current Collector Emitter Saturation Voltage Gate Threshold Voltage Gate - Emitter Leakage Current Test Conditions VGE = 0V, VCE = 1700V Tj = 25C VGE = 15V IC = 300A Tj = 125C VGE = VCE , IC = 5mA VGE = 20V, VCE = 0V Min Typ 2.0 2.4 5.8 Max 750 2.4 6.5 600 Unit A V V nA 5.0 Dynamic Characteristics Symbol Cies Coes Cres Td(on) Tr Td(off) Tf Td(on) Tr Td(off) Tf Eon Eoff Characteristic Input Capacitance Output Capacitance Reverse Transfer Capacitance Turn-on Delay Time Rise Time Turn-off Delay Time Fall Time Turn-on Delay Time Rise Time Turn-off Delay Time Fall Time Turn-on Switching Energy Turn-off Switching Energy Test Conditions VGE = 0V VCE = 25V f = 1MHz Inductive Switching (25C) VGE = 15V VBus = 900V IC = 300A R G = 2.2 Inductive Switching (125C) VGE = 15V VBus = 900V IC = 300A R G = 2.2 Min Typ 26.5 1.1 0.88 370 40 650 180 400 50 800 300 96 94 Max Unit nF ns ns mJ Reverse diode ratings and characteristics Symbol Characteristic VRRM IRM IF(A V) VF trr Qrr Maximum Peak Repetitive Reverse Voltage Test Conditions Tj = 25C Tj = 125C Tc = 80C Tj = 25C Tj = 125C Tj = 25C Tj = 125C Tj = 25C Tj = 125C Min 1700 Typ Max 750 1000 Unit V A A Maximum Reverse Leakage Current Maximum Average Forward Current Diode Forward Voltage Reverse Recovery Time Reverse Recovery Charge VR=1700V 50% duty cycle IF = 300A IF = 300A VR = 900V di/dt =3200A/s 300 1.8 1.9 385 490 80 128 2.2 V ns C May, 2005 APT website - http://www.advancedpower.com 2-5 APTGT300A170 - Rev 0 APTGT300A170 Symbol Characteristic RthJC VISOL TJ TSTG TC Torque Wt Thermal and package characteristics Junction to Case Operating junction temperature range Storage Temperature Range Operating Case Temperature Mounting torque Package Weight To heatsink For terminals M6 M5 IGBT Diode Min Typ Max 0.075 0.14 150 125 100 5 3.5 280 Unit C/W V C N.m g RMS Isolation Voltage, any terminal to case t =1 min, I isol<1mA, 50/60Hz 3400 -40 -40 -40 3 2 Package outline (dimensions in mm) APT website - http://www.advancedpower.com 3-5 APTGT300A170 - Rev 0 May, 2005 APTGT300A170 Typical Performance Curve Output Characteristics (V GE=15V) Output Characteristics 600 500 400 IC (A) T J=125C VGE =13V T J = 125C VGE =20V 600 500 IC (A) TJ=25C 400 300 200 100 0 0 1 2 V CE (V) 3 4 300 VGE=15V 200 100 0 0 1 2 3 V CE (V) 4 5 V GE=9V 600 500 400 300 200 100 0 5 6 Transfert Characteristics TJ =25C 240 200 160 Energy losses vs Collector Current VCE = 900V VGE = 15V RG = 2.2 TJ = 125C Eon Eoff Er TJ=125C E (mJ) IC (A) 120 80 TJ =125C 40 0 7 8 9 10 11 12 13 0 100 200 300 IC (A) 400 500 600 VGE (V) Switching Energy Losses vs Gate Resistance 240 200 160 E (mJ) 120 80 40 0 0 3 6 9 12 Gate Resistance (ohms) 15 VCE = 900V VGE =15V IC = 300A T J = 125C Eon Reverse Bias Safe Operating Area 700 600 500 Eoff Er IC (A) 400 300 200 100 0 0 400 800 1200 1600 2000 VCE (V) VGE =15V T J=125C RG=2.2 maximum Effective Transient Thermal Impedance, Junction to Pulse Duration 0.08 Thermal Impedance (C/W) 0.07 0.06 0.05 0.04 0.03 0.02 0.01 0.1 0.05 0.0001 0.001 Single Pulse 0.01 0.1 1 10 0.5 0.3 0.9 0.7 IGBT 0 0.00001 rectangular Pulse Duration (Seconds) APT website - http://www.advancedpower.com 4-5 APTGT300A170 - Rev 0 May, 2005 APTGT300A170 Operating Frequency vs Collector Current Fmax, Operating Frequency (kHz) 20 ZCS ZVS VCE =900V D=50% RG =2.2 T J=125C T C=75C Forward Characteristic of diode 600 500 TJ=25C 15 400 IC (A) 300 T J=125C 10 200 5 hard switching 100 0 TJ =125C 0 0 80 160 240 IC (A) 320 400 480 0 0.5 1 1.5 V F (V) 2 2.5 3 maximum Effective Transient Thermal Impedance, Junction to Pulse Duration 0.16 Thermal Impedance (C/W) 0.14 0.12 0.1 0.08 0.06 0.04 0.02 0.7 0.5 0.3 0.1 0.05 0.0001 Single Pulse 0.001 0.01 0.1 1 10 0.9 Diode 0 0.00001 rectangular Pulse Duration (Seconds) APT reserves the right to change, without notice, the specifications and information contained herein APT's products are covered by one or more of U.S patents 4,895,810 5,045,903 5,089,434 5,182,234 5,019,522 5,262,336 6,503,786 5,256,583 4,748,103 5,283,202 5,231,474 5,434,095 5,528,058 and foreign patents. U.S and Foreign patents pending. All Rights Reserved. APT website - http://www.advancedpower.com 5-5 APTGT300A170 - Rev 0 May, 2005 |
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