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APTGT300DU120
Dual common source Fast Trench + Field Stop IGBT(R) Power Module
C1 Q1 G1 C2 Q2 G2
VCES = 1200V IC = 300A @ Tc = 80C
Application * AC Switches * Switched Mode Power Supplies * Uninterruptible Power Supplies Features * Fast Trench + Field Stop IGBT(R) Technology - Low voltage drop - Low tail current - Switching frequency up to 20 kHz - Soft recovery parallel diodes - Low diode VF - Low leakage current - Avalanche energy rated - RBSOA and SCSOA rated * Kelvin emitter for easy drive * Very low stray inductance - Symmetrical design - M5 power connectors * High level of integration Benefits * Stable temperature behavior * Very rugged * Direct mounting to heatsink (isolated package) * Low junction to case thermal resistance * Easy paralleling due to positive TC of VCEsat * Low profile
E1
E2
E
G1 E1
C1
E
C2
E2 G2
Absolute maximum ratings
Symbol VCES IC ICM VGE PD RBSOA
Parameter Collector - Emitter Breakdown Voltage Continuous Collector Current Pulsed Collector Current Gate - Emitter Voltage Maximum Power Dissipation TC = 25C TC = 80C TC = 25C TC = 25C Tj = 125C
Reverse Bias Safe Operating Area
600A @ 1100V
These Devices are sensitive to Electrostatic Discharge. Proper Handing Procedures Should Be Followed.
APT website - http://www.advancedpower.com
1-5
APTGT300DU120 - Rev 0
May, 2005
Max ratings 1200 420 300 600 20 1380
Unit V A V W
APTGT300DU120
All ratings @ Tj = 25C unless otherwise specified Electrical Characteristics
Symbol Characteristic ICES VCE(sat) VGE(th) IGES Zero Gate Voltage Collector Current Collector Emitter Saturation Voltage Gate Threshold Voltage Gate - Emitter Leakage Current Test Conditions VGE = 0V, VCE = 1200V Tj = 25C VGE =15V IC = 300A Tj = 125C VGE = VCE , IC = 4 mA VGE = 20V, VCE = 0V Min 1.4 5.0 Typ 1.7 2.0 5.8 Max 500 2.1 6.5 600 Unit A V V nA
Dynamic Characteristics
Symbol Cies Coes Cres Td(on) Tr Td(off) Tf Td(on) Tr Td(off) Tf Eon Eoff
Characteristic Input Capacitance Output Capacitance Reverse Transfer Capacitance Turn-on Delay Time Rise Time Turn-off Delay Time Fall Time Turn-on Delay Time Rise Time Turn-off Delay Time Fall Time Turn on Energy Turn off Energy
Test Conditions VGE = 0V VCE = 25V f = 1MHz Inductive Switching (25C) VGE = 15V VBus = 600V IC = 300A R G = 1.8 Inductive Switching (125C) VGE = 15V VBus = 600V IC = 300A R G = 1.8
Min
Typ 21 1.2 0.9 260 30 420 70 290 50 520 90 30 30
Max
Unit nF
ns
ns
mJ
Reverse diode ratings and characteristics
Symbol Characteristic VRRM Maximum Peak Repetitive Reverse Voltage IRM IF(A V) VF trr Qrr Maximum Reverse Leakage Current Maximum Average Forward Current Diode Forward Voltage Reverse Recovery Time Reverse Recovery Charge
Test Conditions VR=1200V
50% duty cycle
Min 1200 Tj = 25C Tj = 125C Tc = 80C Tj = 25C Tj = 125C Tj = 25C Tj = 125C Tj = 25C Tj = 125C
Typ
Max 500 750
Unit V A A
IF = 300A VGE = 0V IF = 300A VR = 600V
di/dt =3000A/s
300 1.6 1.6 170 280 27 54
2.1
V ns C
May, 2005
APT website - http://www.advancedpower.com
2-5
APTGT300DU120 - Rev 0
APTGT300DU120
Thermal and package characteristics
Symbol Characteristic RthJC VISOL TJ TSTG TC Torque Wt Junction to Case Operating junction temperature range Storage Temperature Range Operating Case Temperature Mounting torque Package Weight To heatsink For terminals M6 M5 IGBT Diode 2500 -40 -40 -40 3 2 Min Typ Max 0.09 0.17 150 125 100 5 3.5 280 Unit C/W V C N.m g
RMS Isolation Voltage, any terminal to case t =1 min, I isol<1mA, 50/60Hz
Package outline (dimensions in mm)
APT website - http://www.advancedpower.com
3-5
APTGT300DU120 - Rev 0
May, 2005
APTGT300DU120
Typical Performance Curve
600 500 IC (A) 400 IC (A) 300 200 100 0 0 1 2 VCE (V) 3 4 Output Characteristics (VGE =15V) Output Characteristics 600 500
TJ=125C
TJ=25C
T J = 125C
V GE=17V VGE =13V VGE=15V
400 300 200 100 0 0 1 2 VCE (V)
VGE =9V
3
4
600 500 400 IC (A) 300 200
Transfert Characteristics
TJ=25C TJ=125C
75 62.5 50 E (mJ) 37.5 25
Energy losses vs Collector Current
VCE = 600V VGE = 15V RG = 1.8 T J = 125C Eon Eoff Er Eon
TJ=125C
100 0 5 6 7 8 9 V GE (V) 10 11 12
12.5 0 0 100 200 300 IC (A) Reverse Bias Safe Operating Area 700 600 500 IC (A)
Eoff
400
500
600
Switching Energy Losses vs Gate Resistance 70 60 50 E (mJ) 40 30 20 10 0 0 2 4 6 8 10 Gate Resistance (ohms) 12
VCE = 600V VGE =15V IC = 300A T J = 125C
Eon
400 300 200 100 0 0 300 600 900 VCE (V) 1200 1500
VGE =15V T J=125C RG=1.8
Er
maximum Effective Transient Thermal Impedance, Junction to Pulse Duration 0.1 Thermal Impedance (C/W) 0.08 0.06 0.5 0.04 0.02 0.3 0.1 0.05 0.0001 0.001 Single Pulse 0.01 0.1 1 10 0.9 0.7
IGBT
0 0.00001
rectangular Pulse Duration (Seconds)
APT website - http://www.advancedpower.com
4-5
APTGT300DU120 - Rev 0
May, 2005
APTGT300DU120
Operating Frequency vs Collector Current Fmax, Operating Frequency (kHz) 60 50 40 30 20 10 0 0 50 100 150 200 250 300 350 400 IC (A)
Hard switching ZCS ZVS VCE=600V D=50% RG=1.8 TJ=125C Tc=75C
Forward Characteristic of diode 600 500 400 IC (A) 300 200 100 0 0 0.4 0.8 1.2 1.6 VF (V) 2 2.4
TJ =125C TJ =25C TJ=125C TJ=25C
maximum Effective Transient Thermal Impedance, Junction to Pulse Duration 0.2 Thermal Impedance (C/W) 0.16 0.12 0.08 0.04 0.9 0.7 0.5 0.3 0.1 0.05 0.0001 0.001 Single Pulse 0.01 0.1 1 10
Diode
0 0.00001
rectangular Pulse Duration (Seconds)
APT reserves the right to change, without notice, the specifications and information contained herein
APT's products are covered by one or more of U.S patents 4,895,810 5,045,903 5,089,434 5,182,234 5,019,522 5,262,336 6,503,786 5,256,583 4,748,103 5,283,202 5,231,474 5,434,095 5,528,058 and foreign patents. U.S and Foreign patents pending. All Rights Reserved.
APT website - http://www.advancedpower.com
5-5
APTGT300DU120 - Rev 0
May, 2005

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