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APTGT300DU60
Dual common source Trench + Field Stop IGBT(R) Power Module
C1 Q1 G1 C2 Q2 G2
VCES = 600V IC = 300A @ Tc = 80C
Application * AC Switches * Switched Mode Power Supplies * Uninterruptible Power Supplies Features * Trench + Field Stop IGBT(R) Technology - Low voltage drop - Low tail current - Switching frequency up to 20 kHz - Soft recovery parallel diodes - Low diode VF - Low leakage current - Avalanche energy rated - RBSOA and SCSOA rated * Kelvin emitter for easy drive * Very low stray inductance - Symmetrical design - M5 power connectors * High level of integration Benefits * Stable temperature behavior * Very rugged * Direct mounting to heatsink (isolated package) * Low junction to case thermal resistance * Easy paralleling due to positive TC of VCEsat * Low profile
E1
E2
E
G1 E1
C1
E
C2
E2 G2
Absolute maximum ratings
Symbol VCES IC ICM VGE PD RBSOA
Parameter Collector - Emitter Breakdown Voltage Continuous Collector Current Pulsed Collector Current Gate - Emitter Voltage Maximum Power Dissipation TC = 25C TC = 80C TC = 25C TC = 25C Tj = 150C
Max ratings 600 430 300 500 20 1150 600A @ 550V
Unit V A V W
May, 2005 1-5 APTGT300DU60 - Rev 0
Reverse Bias Safe Operating Area
These Devices are sensitive to Electrostatic Discharge. Proper Handing Procedures Should Be Followed.
APT website - http://www.advancedpower.com
APTGT300DU60
All ratings @ Tj = 25C unless otherwise specified Electrical Characteristics
Symbol Characteristic ICES VCE(sat) VGE(th) IGES Zero Gate Voltage Collector Current Collector Emitter Saturation Voltage Gate Threshold Voltage Gate - Emitter Leakage Current Test Conditions VGE = 0V, VCE = 600V Tj = 25C VGE =15V IC = 300A Tj = 150C VGE = VCE , IC = 1.5 mA VGE = 20V, VCE = 0V Min Typ 1.4 1.5 5.8 Max 350 1.8 6.5 500 Unit A V V nA
5.0
Dynamic Characteristics
Symbol Cies Coes Cres Td(on) Tr Td(off) Tf Td(on) Tr Td(off) Tf Eon Eoff
Characteristic Input Capacitance Output Capacitance Reverse Transfer Capacitance Turn-on Delay Time Rise Time Turn-off Delay Time Fall Time Turn-on Delay Time Rise Time Turn-off Delay Time Fall Time Turn on Energy Turn off Energy
Test Conditions VGE = 0V VCE = 25V f = 1MHz Inductive Switching (25C) VGE = 15V VBus = 300V IC = 300A R G = 3.3 Inductive Switching (150C) VGE = 15V VBus = 300V IC = 300A R G = 3.3
Min
Typ 24 1.5 0.75 115 45 200 55 120 50 250 70 5.2 10.5
Max
Unit nF
ns
ns
mJ
Reverse diode ratings and characteristics
Symbol Characteristic VRRM Maximum Peak Repetitive Reverse Voltage IRM IF(A V) VF trr Qrr Maximum Reverse Leakage Current Maximum Average Forward Current Diode Forward Voltage Reverse Recovery Time Reverse Recovery Charge
Test Conditions VR=600V
50% duty cycle
Min 600 Tj = 25C Tj = 150C Tc = 80C Tj = 25C Tj = 150C Tj = 25C Tj = 150C Tj = 25C Tj = 150C
Typ
Max 350 600
Unit V A A
IF = 300A VGE = 0V IF = 300A VR = 300V
di/dt =3100A/s
300 1.5 1.4 120 210 13.5 28.5
1.9
V ns C
APT website - http://www.advancedpower.com
2-5
APTGT300DU60 - Rev 0
May, 2005
APTGT300DU60
Thermal and package characteristics
Symbol Characteristic RthJC VISOL TJ TSTG TC Torque Wt Junction to Case Operating junction temperature range Storage Temperature Range Operating Case Temperature Mounting torque Package Weight To heatsink For terminals M6 M5 IGBT Diode 2500 -40 -40 -40 3 2 Min Typ Max 0.13 0.21 175 125 100 5 3.5 280 Unit C/W V C N.m g
RMS Isolation Voltage, any terminal to case t =1 min, I isol<1mA, 50/60Hz
Package outline (dimensions in mm)
APT website - http://www.advancedpower.com
3-5
APTGT300DU60 - Rev 0
May, 2005
APTGT300DU60
Typical Performance Curve
Output Characteristics (VGE =15V) Output Characteristics 600
TJ = 150C V GE=13V VGE=15V
600
TJ=25C
500
TJ =125C
500
T J=150C
IC (A)
400 300 200 100
TJ =25C
400 IC (A) 300 200 100 0
VGE =19V
VGE =9V
0 0 0.5 1 1.5 VCE (V) 2 2.5
0
0.5
1
1.5 2 VCE (V)
2.5
3
3.5
600 500 400 300 200
Transfert Characteristics 20
T J=25C
Energy losses vs Collector Current 17.5 15 E (mJ) 12.5 10 7.5 5 2.5 0 11 0 100 200
VCE = 300V VGE = 15V RG = 3.3 T J = 150C Eoff
Er
IC (A)
T J=125C T J=150C
100 0 5 6 7 8 V GE (V)
TJ =25C
Eon
9
10
300 IC (A)
400
500
600
Switching Energy Losses vs Gate Resistance 40
VCE = 300V VGE =15V IC = 300A T J = 150C
Reverse Bias Safe Operating Area 700 600 500 IC (A) 400 300 200
VGE=15V T J=150C RG=3.3
Eon
30 E (mJ)
20
Eoff
Eoff
10
Eon Er
100 0 25 0
0 0 5 10 15 20 Gate Resistance (ohms)
100
200
300 400 V CE (V)
500
600
700
maximum Effective Transient Thermal Impedance, Junction to Pulse Duration 0.14 Thermal Impedance (C/W) 0.12 0.1 0.08 0.06 0.04 0.02 0.1 0.05 0 0.00001 Single Pulse 0.0001 0.001 0.01 0.1 1 10 0.9
IGBT
0.7
0.3
Rectangular Pulse Duration in Seconds
APT website - http://www.advancedpower.com
4-5
APTGT300DU60 - Rev 0
May, 2005
0.5
APTGT300DU60
Operating Frequency vs Collector Current Fmax, Operating Frequency (kHz) 120 100
ZCS VCE=300V D=50% R G=3.3 T J=150C
Forward Characteristic of diode 600 500 400 IC (A) 300
TJ=125C
80
ZVS
T c=85C
60 40 20 0 0 100 200 300 IC (A) 400 500
Hard switching
200 100 0 0
TJ=150C TJ=25C
0.4
0.8
1.2 V F (V)
1.6
2
maximum Effective Transient Thermal Impedance, Junction to Pulse Duration 0.25 Thermal Impedance (C/W)
Diode
0.2 0.15 0.1 0.05 0.9 0.7 0.5 0.3 0.1 Single Pulse 0.0001 0.001 0.01 0.1 1 10
0.05 0 0.00001
Rectangular Pulse Duration in Seconds
APT reserves the right to change, without notice, the specifications and information contained herein
APT's products are covered by one or more of U.S patents 4,895,810 5,045,903 5,089,434 5,182,234 5,019,522 5,262,336 6,503,786 5,256,583 4,748,103 5,283,202 5,231,474 5,434,095 5,528,058 and foreign patents. U.S and Foreign patents pending. All Rights Reserved.
APT website - http://www.advancedpower.com
5-5
APTGT300DU60 - Rev 0
May, 2005

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