View APTGT600U170D4G_1212477.PDF datasheet online --- IC-ON-LINE

Datasheet File OCR Text:

APTGT600U170D4G
Single switch Trench + Field Stop IGBT(R) Power Module
1
VCES = 1700V IC = 600A @ Tc = 80C
Application * Welding converters * Switched Mode Power Supplies * Uninterruptible Power Supplies * Motor control Features * Trench + Field Stop IGBT(R) Technology - Low voltage drop - Low tail current - Switching frequency up to 20 kHz - Soft recovery parallel diodes - Low diode VF - Low leakage current - Avalanche energy rated - RBSOA and SCSOA rated * Kelvin emitter for easy drive * Low stray inductance * High level of integration * Kelvin emitter for easy drive * Low stray inductance - M6 connectors for power - M4 connectors for signal Benefits * Stable temperature behavior * Very rugged * Direct mounting to heatsink (isolated package) * Low junction to case thermal resistance * Easy paralleling due to positive TC of VCEsat * RoHS Compliant
3 5 2
2 4 5
1
3
Absolute maximum ratings
Symbol VCES IC ICM VGE PD RBSOA
Parameter Collector - Emitter Breakdown Voltage Continuous Collector Current Pulsed Collector Current Gate - Emitter Voltage Maximum Power Dissipation TC = 25C TC = 80C TC = 25C TC = 25C Tj = 125C
Reverse Bias Safe Operation Area
1200A@1600V
These Devices are sensitive to Electrostatic Discharge. Proper Handing Procedures Should Be Followed.
APT website - http://www.advancedpower.com
1-5
APTGT600U170D4G - Rev 1
Max ratings 1700 1100 600 1200 20 2900
Unit V A V W
March, 2006
APTGT600U170D4G
All ratings @ Tj = 25C unless otherwise specified Electrical Characteristics
Symbol Characteristic ICES VCE(sat) VGE(th) IGES Symbol Cies Cres Td(on) Tr Td(off) Tf Td(on) Tr Td(off) Tf Eon Eoff Test Conditions Min Zero Gate Voltage Collector Current Collector Emitter saturation Voltage Gate Threshold Voltage Gate - Emitter Leakage Current VGE = 0V, VCE = 1700V Tj = 25C VGE = 15V IC = 600A Tj = 125C VGE = VCE , IC = 24 mA VGE = 20V, VCE = 0V Test Conditions VGE = 0V, VCE = 25V f = 1MHz Inductive Switching (25C) VGE = 15V VBus = 900V IC = 600A R G = 2.4 Inductive Switching (125C) VGE = 15V VBus = 900V IC = 600A R G = 2.4 VGE = 15V Tj = 125C VBus = 900V IC = 600A Tj = 125C R G = 2.4 Typ 2.0 2.4 5.8 Max 1 2.4 6.4 800 Unit mA V V nA
5.2
Dynamic Characteristics
Characteristic Input Capacitance Reverse Transfer Capacitance Turn-on Delay Time Rise Time Turn-off Delay Time Fall Time Turn-on Delay Time Rise Time Turn-off Delay Time Fall Time Turn On Energy Turn Off Energy
Min
Typ 51 1.8 280 100 850 150 330 100 1000 230 200
Max
Unit nF
ns
ns
mJ 190
Reverse diode ratings and characteristics
Symbol Characteristic VRRM Maximum Peak Repetitive Reverse Voltage IRM IF VF Er trr Qrr Maximum Reverse Leakage Current DC forward current Diode Forward Voltage Reverse Recovery Energy Reverse Recovery Time Reverse Recovery Charge
Test Conditions VR=1700V IF = 600A VGE = 0V Tj = 25C Tj = 125C Tc=80C Tj = 25C Tj = 125C Tj = 25C Tj = 125C Tj = 25C Tj = 125C Tj = 25C Tj = 125C
Min 1700
Typ
Max 750 1000
Unit V A A
600 1.8 1.9 85 145 450 600 150 250
2.2
V mJ ns C
March, 2006 2-5 APTGT600U170D4G - Rev 1
IF = 600A VR = 900V
di/dt =5200A/s
APT website - http://www.advancedpower.com
APTGT600U170D4G
Thermal and package characteristics
Symbol Characteristic RthJC VISOL TJ TSTG TC Torque Wt Junction to Case Thermal Resistance Operating junction temperature range Storage Temperature Range Operating Case Temperature Mounting torque Package Weight M4 M6 IGBT Diode 3500 -40 -40 -40 1 3 Min Typ Max 0.044 0.065 150 125 125 2 5 420 Unit
C/W
RMS Isolation Voltage, any terminal to case t =1 min, I isol<1mA, 50/60Hz
V C N.m g
D4 Package outline (dimensions in mm)
APT website - http://www.advancedpower.com
3-5
APTGT600U170D4G - Rev 1
March, 2006
APTGT600U170D4G
Typical Performance Curve
Output Characteristics (V GE=15V) Output Characteristics 1200 1000
T J=25C
1200 1000 800
IC (A) IC (A)
TJ = 125C
V GE=13V VGE =19V VGE=15V
800
TJ=125C
600 400 200 0 0 1 2 VCE (V) 3 4
600 400 200 0 0 1 2 3 V CE (V) 4 5
VGE =9V
1200 1000 800
Transfert Characteristics 500
T J=25C
Energy losses vs Collector Current
VCE = 900V VGE = 15V RG = 2.4 TJ = 125C
400 E (mJ) 300 200
Eon
IC (A)
600
T J=125C
Eoff Er
400 200 0 5 6 7 8 VGE (V) Switching Energy Losses vs Gate Resistance 1000 800 E (mJ) 600 400
Eoff V CE = 900V V GE =15V I C = 600A T J = 125C
Er
100 0 9 10 11 0 200 400 IC (A) Reverse Bias Safe Operating Area 1400 1200
Eon
600
800
1000
1000 IC (A) 800 600 400 200 0 30 0 400 800 1200 1600 V CE (V)
VGE =15V T J=125C RG=2.4
200
Er
0 0 5 10 15 20 25 Gate Resistance (ohms)
maximum Effective Transient Thermal Impedance, Junction to Pulse Duration 0.05 Thermal Impedance (C/W) 0.04 0.03 0.02 0.01 0 0.00001 0.9 0.7 0.5 0.3 0.1 0.05 0.0001 0.001 Single Pulse 0.01 0.1 1 10
rectangular Pulse Duration (Seconds)
APT website - http://www.advancedpower.com
4-5
APTGT600U170D4G - Rev 1
March, 2006
IGBT
APTGT600U170D4G
Operating Frequency vs Collector Current Fmax, Operating Frequency (kHz) 30 25 20 15 10 5 0 0
hard switching ZCS ZVS VCE =900V D=50% RG=2.4 T J=125C T C=75C
Forward Characteristic of diode 1200 1000
T J=25C
800 IF (A) 600 400 200 0
T J=125C TJ =125C
200
400 IC (A)
600
800
0
0.5
1
1.5 V F (V)
2
2.5
3
maximum Effective Transient Thermal Impedance, Junction to Pulse Duration 0.07 Thermal Impedance (C/W) 0.06 0.05 0.04 0.03 0.02 0.01 0.3 0.1 0.05 0.0001 0.001 Single Pulse 0.01 0.1 1 10 0.9 0.7 0.5
Diode
0 0.00001
rectangular Pulse Duration (Seconds)
APT reserves the right to change, without notice, the specifications and information contained herein
APT's products are covered by one or more of U.S patents 4,895,810 5,045,903 5,089,434 5,182,234 5,019,522 5,262,336 6,503,786 5,256,583 4,748,103 5,283,202 5,231,474 5,434,095 5,528,058 and foreign patents. U.S and Foreign patents pending. All Rights Reserved.
APT website - http://www.advancedpower.com
5-5
APTGT600U170D4G - Rev 1
March, 2006

▲Up To Search▲

Price & Availability of APTGT600U170D4G

	To Download APTGT600U170D4G Datasheet File
If you can't view the Datasheet, Please click here to try to view without PDF Reader .