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APTM10HM19FT3
Full - Bridge MOSFET Power Module
13 14 Q1 Q3
VDSS = 100V RDSon = 19m typ @ Tj = 25C ID = 70A @ Tc = 25C
Application * Welding converters * Switched Mode Power Supplies * Uninterruptible Power Supplies * Motor control Features * Power MOS V(R) FREDFETs - Low RDSon - Low input and Miller capacitance - Low gate charge - Fast intrinsic diode - Avalanche energy rated - Very rugged * Kelvin source for easy drive * Very low stray inductance Symmetrical design * Internal thermistor for temperature monitoring * High level of integration Benefits * Outstanding performance at high frequency operation * Direct mounting to heatsink (isolated package) * Low junction to case thermal resistance * Solderable terminals both for power and signal for easy PCB mounting * Low profile * Each leg can be easily paralleled to achieve a phase leg of twice the current capability
18 22 19 Q2 23 8 Q4 7
11
10
26
4 3 29 15 30 31 R1 32 16
27
28 27 26 25 29 30
23 22
20 19 18 16 15
31 32 2 3 4 7 8 10 11 12
14 13
All multiple inputs and outputs must be shorted together Example: 13/14 ; 29/30 ; 22/23 ...
Absolute maximum ratings
Symbol VDSS ID IDM VGS RDSon PD IAR EAR EAS
Parameter Drain - Source Breakdown Voltage Continuous Drain Current Pulsed Drain current Gate - Source Voltage Drain - Source ON Resistance Maximum Power Dissipation Avalanche current (repetitive and non repetitive) Repetitive Avalanche Energy Single Pulse Avalanche Energy Tc = 25C Tc = 80C
Tc = 25C
mJ
These Devices are sensitive to Electrostatic Discharge. Proper Handing Procedures Should Be Followed.
APT website - http://www.advancedpower.com
1-6
APTM10HM19FT3- Rev 0
Max ratings 100 70 50 300 30 20 208 75 30 1500
Unit V A V m W A
May, 2005
APTM10HM19FT3
All ratings @ Tj = 25C unless otherwise specified Electrical Characteristics
Symbol IDSS RDS(on) VGS(th) IGSS Characteristic Test Conditions Min Zero Gate Voltage Drain Current Drain - Source on Resistance Gate Threshold Voltage Gate - Source Leakage Current
VGS = 0V,VDS = 100V VGS = 0V,VDS = 80V
Typ
Tj = 25C Tj = 125C 19 2
VGS = 10V, ID = 35A VGS = VDS, ID = 1mA VGS = 30 V, VDS = 0V
Max 250 1000 20 4 100
Unit A m V nA
Dynamic Characteristics
Symbol Ciss Coss Crss Qg Qgs Qgd Td(on) Tr Td(off) Tf Eon Eoff Eon Eoff
Characteristic Input Capacitance Output Capacitance Reverse Transfer Capacitance Total gate Charge Gate - Source Charge Gate - Drain Charge Turn-on Delay Time Rise Time Turn-off Delay Time Fall Time Turn-on Switching Energy Turn-off Switching Energy Turn-on Switching Energy Turn-off Switching Energy
Test Conditions VGS = 0V VDS = 25V f = 1MHz VGS = 10V VBus = 100V ID = 70A Inductive switching @ 125C VGS = 15V VBus = 66V ID = 70A R G = 5 Inductive switching @ 25C VGS = 15V, VBus = 66V ID = 70A, R G = 5 Inductive switching @ 125C VGS = 15V, VBus = 66V ID = 70A, R G = 5
Min
Typ 5100 1900 800 200 40 92 35 70 95 125 276 302 304 320
Max
Unit pF
nC
ns
J J
Source - Drain diode ratings and characteristics
Symbol IS VSD dv/dt trr Qrr Characteristic Continuous Source current (Body diode) Diode Forward Voltage Peak Diode Recovery Reverse Recovery Time Reverse Recovery Charge
Test Conditions Tc = 25C Tc = 80C
Min
Typ
VGS = 0V, IS = - 70A IS = -70A diS/dt = 100A/s IS = -70A diS/dt = 100A/s Tj = 25C Tj = 125C Tj = 25C Tj = 125C 0.5 1
Max 70 50 1.3 5 200 350
Unit A V V/ns ns C
May, 2005 2-6 APTM10HM19FT3- Rev 0
Eon includes diode reverse recovery. In accordance with JEDEC standard JESD24-1. dv/dt numbers reflect the limitations of the circuit rather than the device itself. IS - 70A di/dt 700A/s VR VDSS Tj 150C
APT website - http://www.advancedpower.com
APTM10HM19FT3
Thermal and package characteristics
Symbol RthJC VISOL TJ TSTG TC Torque Wt Characteristic Junction to Case
RMS Isolation Voltage, any terminal to case t =1 min, I isol<1mA, 50/60Hz
Min 2500 -40 -40 -40 1.5
Typ
Max 0.6 150 125 100 4.7 110
Unit C/W V C N.m g
Operating junction temperature range Storage Temperature Range Operating Case Temperature Mounting torque Package Weight
To heatsink
M4
Temperature sensor NTC (for more information see application note APT0406 on www.advancedpower.com).
Symbol Characteristic R25 Resistance @ 25C B 25/85 T25 = 298.15 K Min Typ 50 3952
Max
Unit k K
RT =
R 25
1 1 RT : Thermistor value at T exp B 25 / 85 T - T 25
T: Thermistor temperature
Package outline (dimensions in mm)
1
12
APT website - http://www.advancedpower.com
3-6
APTM10HM19FT3- Rev 0
May, 2005
17
28
APTM10HM19FT3
Typical Performance Curve
Maximum Effective Transient Thermal Impedance, Junction to Case vs Pulse Duration 0.7 Thermal Impedance (C/W) 0.6 0.5 0.4 0.3 0.2 0.1 0.5 0.3 0.1 0.05 0.0001 0.001 0.01 0.1 1 10 Single Pulse 0.9 0.7
0 0.00001
rectangular Pulse Duration (Seconds) Low Voltage Output Characteristics 125 ID, Drain Current (A)
VGS=15V, 10V & 9V 8V
300 ID, Drain Current (A) 250 200 150
Transfert Characteristics
V DS > ID(on)xRDS(on)MAX 250s pulse test @ < 0.5 duty cycle
100 75 50
7V
100 50 0 0 4 8 12 16 20 24
6V
T J=25C
25 0
T J=125C
T J=-55C
28
0
VDS, Drain to Source Voltage (V) RDS(on) vs Drain Current 1.6 ID, DC Drain Current (A)
Normalized to V GS=10V @ 35A
1 2 3 4 5 6 7 VGS , Gate to Source Voltage (V)
8
DC Drain Current vs Case Temperature 80 70 60 50 40 30 20 10 0 25 50 75 100 125 150
May, 2005 4-6 APTM10HM19FT3- Rev 0
RDS(on) Drain to Source ON Resistance
1.4
VGS=10V
1.2 1 0.8 0 50 100 150 200 250 ID, Drain Current (A)
VGS=20V
TC, Case Temperature (C)
APT website - http://www.advancedpower.com
APTM10HM19FT3
RDS(on), Drain to Source ON resistance (Normalized) Breakdown Voltage vs Temperature BVDSS, Drain to Source Breakdown Voltage (Normalized) 1.15 1.10 1.05 1.00 0.95 0.90 -50 -25 0 25 50 75 100 125 150 TJ, Junction Temperature (C) Threshold Voltage vs Temperature 1.2 VGS(TH), Threshold Voltage (Normalized) ID, Drain Current (A) 1.1 1.0 0.9 0.8 0.7 0.6 -50 -25 0 25 50 75 100 125 150 TC, Case Temperature (C) Capacitance vs Drain to Source Voltage 100000 C, Capacitance (pF) ON resistance vs Temperature 2.5 2.0 1.5 1.0 0.5 0.0 -50 -25 0 25 50 75 100 125 150 TJ, Junction Temperature (C) Maximum Safe Operating Area 1000
limited by RDSon
VGS=10V ID= 35A
1ms
100
10ms
10 Single pulse TJ=150C 1 1 10 100 VDS, Drain to Source Voltage (V)
100ms
VGS, Gate to Source Voltage (V)
Gate Charge vs Gate to Source Voltage 16 14 12 10 8 6 4 2 0 0 40 80 120 160 200 240 280 Gate Charge (nC)
May, 2005
ID=70A T J=25C VDS=20V VDS=50V V DS =80V
10000
Ciss Coss
1000
Crss
100 0 10 20 30 40 50 VDS, Drain to Source Voltage (V)
APT website - http://www.advancedpower.com
5-6
APTM10HM19FT3- Rev 0
APTM10HM19FT3
Delay Times vs Current 120 100 td(on) and td(off) (ns) 80 60 40 20 0 0 20 40 60 80 100 ID, Drain Current (A) 120
VDS=66V RG=5 TJ=125C L=100H
Rise and Fall times vs Current 160 140 tr and tf (ns) 120 100 80 60 40 20 0 0 20 40 60 80 100 ID, Drain Current (A) 120
VDS=66V R G=5 TJ =125C L=100H
td(off)
tf
tr
td(on)
Switching Energy vs Current 0.75 Eoff Switching Energy (mJ)
VDS=66V RG=5 TJ =125C L=100H
Switching Energy vs Gate Resistance 1.5
VDS=66V ID=70A TJ=125C L=100H
Eon and Eoff (mJ)
0.5
1
Eoff
E on 0.25
0.5
Eon
0 0 20 40 60 80 100 120 I D, Drain Current (A) Operating Frequency vs Drain Current
VDS=66V D=50% R G=5 TJ =125C TC =75C
0 0 10 20 30 40 50 60 Gate Resistance (Ohms) Source to Drain Diode Forward Voltage IDR, Reverse Drain Current (A) 1000
300 250 Frequency (kHz) 200 150 100 50 0 13 25 38 50 63 75 I D, Drain Current (A)
Hard switching ZCS
100
TJ=150C
T J=25C
ZVS
10
1 0.3 0.5 0.7 0.9 1.1 1.3 1.5 VSD, Source to Drain Voltage (V)
APT reserves the right to change, without notice, the specifications and information contained herein
APT's products are covered by one or more of U.S patents 4,895,810 5,045,903 5,089,434 5,182,234 5,019,522 5,262,336 6,503,786 5,256,583 4,748,103 5,283,202 5,231,474 5,434,095 5,528,058 and foreign patents. U.S and Foreign patents pending. All Rights Reserved.
APT website - http://www.advancedpower.com
6-6
APTM10HM19FT3- Rev 0
May, 2005

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