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APTM50DDA10T3
Dual Boost chopper MOSFET Power Module
13 14
VDSS = 500V RDSon = 100m max @ Tj = 25C ID = 37A @ Tc = 25C
Application * AC and DC motor control * Switched Mode Power Supplies * Power Factor Correction Features * Power MOS 7(R) MOSFETs - Low RDSon - Low input and Miller capacitance - Low gate charge - Avalanche energy rated - Very rugged * Kelvin source for easy drive * Very low stray inductance - Symmetrical design * Internal thermistor for temperature monitoring * High level of integration Benefits * Outstanding performance at high frequency operation * Direct mounting to heatsink (isolated package) * Low junction to case thermal resistance * Solderable terminals both for power and signal for easy PCB mounting * Low profile * Each leg can be easily paralleled to achieve a single boost of twice the current capability
CR1 22 7
CR2
23 Q1 26
8 Q2 4
27 29 15 30 31 R1 32 16
3
28 27 26 25 29 30
23 22
20 19 18 16 15
31 32 2 3 4 7 8 10 11 12
14 13
All multiple inputs and outputs must be shorted together Example: 13/14 ; 29/30 ; 22/23 ...
Absolute maximum ratings
Symbol VDSS ID IDM VGS RDSon PD IAR EAR EAS
Parameter Drain - Source Breakdown Voltage Continuous Drain Current Pulsed Drain current Gate - Source Voltage Drain - Source ON Resistance Maximum Power Dissipation Avalanche current (repetitive and non repetitive) Repetitive Avalanche Energy Single Pulse Avalanche Energy Tc = 25C Tc = 80C
Tc = 25C
V m W A mJ
These Devices are sensitive to Electrostatic Discharge. Proper Handing Procedures Should Be Followed.
APT website - http://www.advancedpower.com
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APTM50DDA10T3 - Rev1 December, 2004
Max ratings 500 37 28 140 30 100 312 41 50 1600
Unit V A
APTM50DDA10T3
All ratings @ Tj = 25C unless otherwise specified Electrical Characteristics
Symbol IDSS RDS(on) VGS(th) IGSS Characteristic Zero Gate Voltage Drain Current Drain - Source on Resistance Gate Threshold Voltage Gate - Source Leakage Current Test Conditions VGS = 0V VDS = 500V Min Tj = 25C Tj = 125C VGS = 10V, ID = 18.5A VGS = VDS, ID = 1mA VGS = 30 V, VDS = 0V Typ Max 100 500 100 5 100 Unit A m V nA
3
Dynamic Characteristics
Symbol Ciss Coss Crss Qg Qgs Qgd Td(on) Tr Td(off) Tf Eon Eoff Eon Eoff
Characteristic Input Capacitance Output Capacitance Reverse Transfer Capacitance Total gate Charge Gate - Source Charge Gate - Drain Charge Turn-on Delay Time Rise Time Turn-off Delay Time Fall Time Turn-on Switching Energy Turn-off Switching Energy Turn-on Switching Energy Turn-off Switching Energy
Test Conditions VGS = 0V VDS = 25V f = 1MHz VGS = 10V VBus = 250V ID = 37A Inductive switching @ 125C VGS = 15V VBus = 333V ID = 37A R G = 5 Inductive switching @ 25C VGS = 15V, VBus = 333V ID = 37A, R G = 5 Inductive switching @ 125C VGS = 15V, VBus = 333V ID = 37A, R G = 5 Test Conditions VR=600V
50% duty cycle
Min
Typ 4367 894 61 96 24 49 15 21 73 52 566 545 931 635
Max
Unit pF
nC
ns
J J
Diode ratings and characteristics
Symbol Characteristic VRRM Maximum Peak Repetitive Reverse Voltage IRM IF(A V) VF Maximum Reverse Leakage Current Maximum Average Forward Current Diode Forward Voltage
Min 600 Tj = 25C Tj = 125C Tc = 70C
Typ
Max 250 750
Unit V A A
IF = 30A IF = 60A IF = 30A IF = 30A VR = 400V di/dt=200A/s
Tj = 150C Tj = 25C Tj = 100C Tj = 25C Tj = 100C
30 2.2 2.7 1.5 74 74 123 288
2.7 V
Qrr
Reverse Recovery Charge
nC
Eon includes diode reverse recovery. In accordance with JEDEC standard JESD24-1.
APT website - http://www.advancedpower.com
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APTM50DDA10T3 - Rev1 December, 2004
trr
Reverse Recovery Time
ns
APTM50DDA10T3
Thermal and package characteristics
Symbol Characteristic RthJC VISOL TJ TSTG TC Torque Wt Junction to Case Operating junction temperature range Storage Temperature Range Operating Case Temperature Mounting torque Package Weight IGBT Diode 2500 -40 -40 -40 Min Typ Max 0.4 1.2 150 125 100 4.7 110 Unit C/W V C N.m g
RMS Isolation Voltage, any terminal to case t =1 min, I isol<1mA, 50/60Hz
To heatsink
M4
Temperature sensor NTC
Symbol Characteristic R25 Resistance @ 25C B 25/85 T25 = 298.16 K
Min
Typ 68 4080
Max
Unit k K
RT =
R 25 1 1 exp B25 / 85 T - T 25
T: Thermistor temperature RT : Thermistor value at T
Package outline
1
12
APT website - http://www.advancedpower.com
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APTM50DDA10T3 - Rev1 December, 2004
17
28
APTM50DDA10T3
Typical Performance Curve
Maximum Effective Transient Thermal Impedance, Junction to Case vs Pulse Duration 0.45 Thermal Impedance (C/W) 0.4 0.35 0.3 0.25 0.2 0.15 0.1 0.05 0.3 0.1 0.05 0.0001 Single Pulse 0.001 0.01 0.1 rectangular Pulse Duration (Seconds) 1 10 0.7 0.5 0.9
0 0.00001
Low Voltage Output Characteristics 140 I D, Drain Current (A) I D, Drain Current (A) 120 100 80 60 40 20 0 0 5 10 15 20 VDS, Drain to Source Voltage (V) RDS(on) vs Drain Current I D, DC Drain Current (A)
Normalized to V GS=10V @ 18.5A VGS =10V 7V 6.5V 6V 5.5V VGS=10&15V 8V 7.5V
Transfert Characteristics
120 100 80 60 40 20 0
25
T J=25C T J=125C VDS > ID(on)xR DS(on)MAX 250s pulse test @ < 0.5 duty cycle
T J=-55C
0
1
2
3
4
5
6
7
8
VGS, Gate to Source Voltage (V) DC Drain Current vs Case Temperature 40
RDS(on) Drain to Source ON Resistance
1.20 1.15 1.10 1.05
30 20
VGS =20V
1.00 0.95 0.90 0 20 40 60 80 ID, Drain Current (A)
10
0
APTM50DDA10T3 - Rev1 December, 2004
25
50 75 100 125 TC, Case Temperature (C)
150
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APTM50DDA10T3
RDS(on), Drain to Source ON resistance (Normalized) Breakdown Voltage vs Temperature BVDSS, Drain to Source Breakdown Voltage (Normalized) 1.2 1.1 1.0 0.9 0.8 0.7 -50 -25 0 25 50 75 100 125 150 TJ, Junction Temperature (C) Threshold Voltage vs Temperature 1.2 VGS (TH), Threshold Voltage (Normalized) ID, Drain Current (A) 1.1 1.0 0.9 0.8 0.7 0.6 -50 -25 0 25 50 75 100 125 150 TC, Case Temperature (C) Capacitance vs Drain to Source Voltage 100000 VGS , Gate to Source Voltage (V) 1000
100s
2.5 2.0 1.5 1.0 0.5 0.0
ON resistance vs Temperature
VGS=10V ID=18.5A
-50 -25 0 25 50 75 100 125 150 TJ, Junction Temperature (C) Maximum Safe Operating Area
100
limited by R DSonDSon limited by R
1ms
10 Single pulse TJ =150C 1 1 10 100 1000 VDS, Drain to Source Voltage (V)
10ms
Gate Charge vs Gate to Source Voltage 14 12 10 8 6 4 2 0 0 20 40 60 80 100 120 140 Gate Charge (nC)
VDS=400V ID=37A T J=25C V DS =100V VDS=250V
C, Capacitance (pF)
10000
Ciss Coss
1000
100
Crss
10 0 10 20 30 40 VDS, Drain to Source Voltage (V) 50
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APTM50DDA10T3 - Rev1 December, 2004
APTM50DDA10T3
Delay Times vs Current 80 td(off)
VDS=333V RG=5 TJ=125C L=100H
Rise and Fall times vs Current 100 80 t r and tf (ns) 60 40 20 0 tr
VDS=333V RG=5 T J=125C L=100H
t d(on) and td(off) (ns)
60
tf
40
20
td(on)
0 10 20 30 40 50 60 ID, Drain Current (A) 70
10
20
30
40
50
60
70
I D, Drain Current (A) Switching Energy vs Gate Resistance
Switching Energy vs Current
2
Switching Energy (mJ)
2.5
Switching Energy (mJ)
1.6 1.2 0.8 0.4 0 10
VDS=333V RG=5 TJ=125C L=100H
Eon
2 1.5 1 0.5 0
V DS=333V ID=35A T J=125C L=100H
Eoff
Eoff
Eon
20
30
40
50
60
0
10
20
30
40
50
I D, Drain Current (A) Operating Frequency vs Drain Current 400 Frequency (kHz) 350 300 250 200 150 100 50 0 5 10 15 20 25 30 35 ID, Drain Current (A)
hard switching ZCS V DS=333V D=50% R G=5 T J=125C T C=75C ZVS
Gate Resistance (Ohms) Source to Drain Diode Forward Voltage
IDR, Reverse Drain Current (A)
450
1000
100
TJ =150C
10 TJ=25C 1 0.2 0.4 0.6 0.8 1 1.2 1.4 1.6 1.8
APTM50DDA10T3 - Rev1 December, 2004
VSD, Source to Drain Voltage (V)
APT reserves the right to change, without notice, the specifications and information contained herein
APT's products are covered by one or more of U.S patents 4,895,810 5,045,903 5,089,434 5,182,234 5,019,522 5,262,336 6,503,786 5,256,583 4,748,103 5,283,202 5,231,474 5,434,095 5,528,058 and foreign patents. U.S and Foreign patents pending. All Rights Reserved.
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