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APTM50TAM65FPG
Triple phase leg MOSFET Power Module
VBUS1 VBUS2 VBUS3
VDSS = 500V RDSon = 65m typ @ Tj = 25C ID = 51A @ Tc = 25C
Application * Welding converters * Switched Mode Power Supplies * Uninterruptible Power Supplies * Motor control
G1
G3
G5
S1 U
S3 V
S5 W
G2
G4
G6
S2 0/VBUS1
S4 0/VBUS2
S6 0/VBUS3
Features * Power MOS 7(R) FREDFETs - Low RDSon - Low input and Miller capacitance - Low gate charge - Fast intrinsic reverse diode - Avalanche energy rated - Very rugged * Kelvin source for easy drive * Very low stray inductance - Symmetrical design - Lead frames for power connections * High level of integration
These Devices are sensitive to Electrostatic Discharge. Proper Handing Procedures Should Be Followed. See application note APT0502 on www.microsemi.com
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APTM50TAM65FPG - Rev 1 July, 2006
Benefits * Outstanding performance at high frequency operation VBUS 1 VBUS 2 VBUS 3 * Direct mounting to heatsink (isolated package) * Low junction to case thermal resistance G1 G3 G5 * Solderable terminals both for power and signal for S3 S1 S5 0/VBUS 1 0/VBUS 2 0/VBUS 3 easy PCB mounting S4 S2 S6 * Very low (12mm) profile G4 G2 G6 * Each leg can be easily paralleled to achieve a phase leg of three times the current capability U V W * Module can be configured as a three phase bridge * Module can be configured as a boost followed by a full bridge * RoHS Compliant Absolute maximum ratings Symbol Parameter Max ratings Unit VDSS Drain - Source Breakdown Voltage 500 V Tc = 25C 51 ID Continuous Drain Current A Tc = 80C 38 IDM Pulsed Drain current 204 VGS Gate - Source Voltage 30 V RDSon Drain - Source ON Resistance 78 m PD Maximum Power Dissipation Tc = 25C 390 W IAR Avalanche current (repetitive and non repetitive) 51 A EAR Repetitive Avalanche Energy 50 mJ EAS Single Pulse Avalanche Energy 3000
APTM50TAM65FPG
All ratings @ Tj = 25C unless otherwise specified Electrical Characteristics
Symbol IDSS RDS(on) VGS(th) IGSS Characteristic Test Conditions Min Zero Gate Voltage Drain Current Drain - Source on Resistance Gate Threshold Voltage Gate - Source Leakage Current
VGS = 0V,VDS = 500V VGS = 0V,VDS = 400V
Typ
Tj = 25C Tj = 125C 65 3
VGS = 10V, ID = 25.5A VGS = VDS, ID = 2.5mA VGS = 30 V, VDS = 0V
Max 100 500 78 5 100
Unit A m V nA
Dynamic Characteristics
Symbol Ciss Coss Crss Qg Qgs Qgd Td(on) Tr Td(off) Tf Eon Eoff Eon Eoff
Characteristic Input Capacitance Output Capacitance Reverse Transfer Capacitance Total gate Charge Gate - Source Charge Gate - Drain Charge Turn-on Delay Time Rise Time Turn-off Delay Time Fall Time Turn-on Switching Energy Turn-off Switching Energy Turn-on Switching Energy Turn-off Switching Energy
Test Conditions VGS = 0V VDS = 25V f = 1MHz VGS = 10V VBus = 250V ID = 51A Inductive switching @ 125C VGS = 15V VBus = 333V ID = 51A R G = 3 Inductive switching @ 25C VGS = 15V, VBus = 333V ID = 51A, R G = 3 Inductive switching @ 125C VGS = 15V, VBus = 333V ID = 51A, R G = 3
Min
Typ 7000 1400 90 140 40 70 21 38 75 93 1035 845 1556 1013
Max
Unit pF
nC
ns
J
J
Source - Drain diode ratings and characteristics
Symbol IS VSD dv/dt trr Qrr Characteristic Continuous Source current (Body diode) Diode Forward Voltage Peak Diode Recovery Reverse Recovery Time Reverse Recovery Charge
Test Conditions Tc = 25C Tc = 80C
Min
Typ
VGS = 0V, IS = - 51A Tj = 25C IS = - 51A VR = 333V diS/dt = 100A/s Tj = 125C Tj = 25C Tj = 125C 2.6 9.6
Max 51 38 1.3 15 270 540
Unit A V V/ns ns C
APTM50TAM65FPG - Rev 1 July, 2006
dv/dt numbers reflect the limitations of the circuit rather than the device itself. IS - 51A di/dt 700A/s VR VDSS Tj 150C
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APTM50TAM65FPG
Thermal and package characteristics
Symbol RthJC VISOL TJ TSTG TC Torque Wt Characteristic Junction to Case Thermal Resistance IGBT 2500 -40 -40 -40 3
RMS Isolation Voltage, any terminal to case t =1 min, I isol<1mA, 50/60Hz
Min
Typ
Max 0.32 150 125 100 5 250
Unit C/W V C N.m g
Operating junction temperature range Storage Temperature Range Operating Case Temperature Mounting torque Package Weight
To heatsink
M6
SP6-P Package outline (dimensions in mm)
5 places (3:1)
See application note 1902 - Mounting Instructions for SP6-P (12mm) Power Modules on www.microsemi.com
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APTM50TAM65FPG - Rev 1 July, 2006
APTM50TAM65FPG
Typical Performance Curve
Maximum Effective Transient Thermal Impedance, Junction to Case vs Pulse Duration 0.35 Thermal Impedance (C/W) 0.3 0.25 0.2 0.15 0.1 0.05 0.3 0.1 0.05 0.0001 0.001 0.9 0.7 0.5
Single Pulse 0.01 0.1 1 10
0 0.00001
rectangular Pulse Duration (Seconds) Low Voltage Output Characteristics 200 ID, Drain Current (A) 160 120 80 40
5.5V VGS=10&15V 7V 6.5V 6V 5V
150 ID, Drain Current (A)
8V
Transfert Characteristics
V DS > ID(on)xRDS(on)MAX 250s pulse test @ < 0.5 duty cycle
125 100 75 50 25 0
TJ=25C
TJ=125C
TJ=-55C
0 0
5 10 15 20 VDS, Drain to Source Voltage (V) RDS(on) vs Drain Current
25
0
2
4
6
8
VGS, Gate to Source Voltage (V) DC Drain Current vs Case Temperature 60 ID, DC Drain Current (A) 60
RDS(on) Drain to Source ON Resistance
1.1
1.05
Normalized to VGS =10V @ 25.5A VGS=10V
50 40 30 20 10 0
1
VGS=20V
0.95
0.9 0 10 20 30 40 50 ID, Drain Current (A)
25
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APTM50TAM65FPG - Rev 1 July, 2006
50 75 100 125 TC, Case Temperature (C)
150
APTM50TAM65FPG
RDS(on), Drain to Source ON resistance (Normalized) Breakdown Voltage vs Temperature BVDSS, Drain to Source Breakdown Voltage (Normalized) 1.2 1.1 1.0 0.9 0.8 0.7 -50 -25 0 25 50 75 100 125 150 TJ, Junction Temperature (C) Threshold Voltage vs Temperature 1.2 VGS(TH), Threshold Voltage (Normalized) 1.1 1.0 0.9 0.8 0.7 0.6 -50 -25 0 25 50 75 100 125 150 TC, Case Temperature (C) Capacitance vs Drain to Source Voltage 100000 C, Capacitance (pF) Ciss Coss 1000 Crss 1000 I D, Drain Current (A)
limited by RDSon
ON resistance vs Temperature 2.5 2.0 1.5 1.0 0.5 0.0 -50 -25 0 25 50 75 100 125 150 TJ, Junction Temperature (C) Maximum Safe Operating Area
VGS=10V ID= 25.5A
100
100 us
10 Single pulse TJ =150C TC=25C 1
1 ms 10 ms
1
100 ms
0.1 10 100 1000 VDS, Drain to Source Voltage (V)
Gate Charge vs Gate to Source Voltage VGS, Gate to Source Voltage (V) 14 12 10 8 6 4 2 0 0 25 50 75 100 125 150 175 Gate Charge (nC)
APTM50TAM65FPG - Rev 1 July, 2006
VDS=400V
ID=51A TJ=25C
VDS=100V VDS=250V
10000
100
10 0 10 20 30 40 VDS, Drain to Source Voltage (V) 50
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APTM50TAM65FPG
Delay Times vs Current 80 70 td(on) and t d(off) (ns) 60 50 40 30 20 10 10 20 30 40 50 60 I D, Drain Current (A) 70 80
V DS=333V RG =3 T J=125C L=100H td(off)
Rise and Fall times vs Current 160 140 120 t r and tf (ns) 100 80 60 40 20 0 10 20 30 40 50 60 ID, Drain Current (A) 70 80
VDS=333V RG=3 T J=125C L=100H
tf
tr
td(on)
Switching Energy vs Current 3 Switching Energy (mJ) 2.5 2 1.5 1 0.5 0 10 20 30 40 50 60 70 80 I D, Drain Current (A) Operating Frequency vs Drain Current 400 Frequency (kHz) 350 300 250 200 150 100 50 0 10 15 20 25 30 35 I D, Drain Current (A) 40 45
hard switching ZCS ZVS VDS=333V D=50% RG=3 TJ=125C TC=75C
Switching Energy vs Gate Resistance 5
V DS =333V ID=51A T J=125C L=100H
Eon
Switching Energy (mJ)
VDS=333V RG=3 TJ=125C L=100H
4 3 2 1 0 0
Eoff
Eon
Eoff
Eoff
5
10 15 20 25 30 35 40 45 Gate Resistance (Ohms)
I DR, Reverse Drain Current (A)
450
Source to Drain Diode Forward Voltage 1000
100
T J=150C TJ=25C
10
1 0.2 0.4 0.6 0.8 1 1.2 1.4 1.6 VSD, Source to Drain Voltage (V)
APTM50TAM65FPG - Rev 1 July, 2006
Microsemi reserves the right to change, without notice, the specifications and information contained herein
Microsemi's products are covered by one or more of U.S patents 4,895,810 5,045,903 5,089,434 5,182,234 5,019,522 5,262,336 6,503,786 5,256,583 4,748,103 5,283,202 5,231,474 5,434,095 5,528,058 and foreign patents. U.S and Foreign patents pending. All Rights Reserved.
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